• Journal of the Semiconductor & Display Technology
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• v.22 no.2
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• pp.87-95
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• 2023

TiO₂ thin films were grown using the Atomic Layer Deposition (ALD) and their structural and electrical properties were investigated. The crystal structure, dielectric constant, and surface roughness of the TiO₂ thin films grown by the ALD deposition method were studied. The grown TiO₂ thin films showed an anatase crystal structure, and their properties varied with temperature. In particular, the properties of the TiO₂ thin films were confirmed by changing the process temperature. The electrical properties of Metal-Insulator-Silicon (MIS) capacitor structures were analyzed using a probe station. The performance improvement of capacitors using TiO₂ as a dielectric was confirmed by measuring capacitance through Capacitance-Voltage (C-V) curves.

• Proceedings of the KIEE Conference
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• 2005.07c
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• pp.1850-1852
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• 2005

$SrTiO_3$ and $BaTiO_3$ sol-liquids and powders were prepared by the sol-gel method. $SrTiO_3/BaTiO_3$ heterolayered thin/thick films have been prepared on the $Al_2O_3$ substrates by screen printing and spin-coating method. The thin films were sintered at $750^{\circ}C$ in the air for 1 hour and the thick films sintered at $1325^{\circ}C$ in the air for 2 hours, respectively. The $SrTiO_3/BaTiO_3$ thin/thick films's structural and dielectric properties were investigated. Increasing the spin-coating times, (110), (200), (211) peaks of the $SrTiO_3$ were increased. The X-ray diffraction(XRD) patterns and SEM photographs indicated that the $SrTiO_3$ phase were formed in the surface of $BaTiO_3$ thick films. The average thickness of a $BaTiO_3$ thick films and $SrTiO_3$ thin films were $50{\mu}m$ and 400nm, respectively The dielectric constant and dielectric loss of the $SrTiO_3/BaTiO_3$ thin/thick films with $SrTiO_3$ coated 5 times were 1598 and 0.0436 at 10KHz.

• Journal of the Korean institute of surface engineering
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• v.24 no.4
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• pp.196-205
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• 1991

Multi-level thin films are very important in ULSI applications because of their high electromigration resistance. This study presents the effects of titanium, titanium nitride and titanium tungsten underlayers of the stability of multi-aluminum thin films during isothermal annealing. High purity Al(99.999%) films have been electron-beam evaporated on Ti, TiN, TiW films formed on SiO2/Si (P-type(100))-wafer substrates by RF-sputtering in Ar gas ambient. The hillock growth was increased with annealing temperatures. Growth of hillocks was observed during isothermal annealing of the thin films by scanning electron microscopy. The hillock growth was believed to appear due to the recrystallization process driven by stress relaxation during isothermal annealing. Thermomigration damage was also presented in thin films by grain boundary grooving processes. It is shown that underlayers of Al/TiN/SiO2, Al/TiW/SiO2 thin films are preferrable to Al/SiO2 thin film metallization.

• Journal of the Korean Vacuum Society
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• v.9 no.3
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• pp.227-232
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• 2000

$MgTiO_3$thin films have been grown on various substrates by pulsed laser deposition (PLD) to investigate the application for microwave dielectrics and optical devices. Epitaxial $MgTiO_3$thin films were obtained on sapphire (c-plane$A1_2O_3$$MgTiO_3$thin films deposited on $SiO_2/Si$ and platinized silicon ($Pt/Ti/SiO_2/Si$) substrates were highly oriented. $MgTiO_3$thin films grown on sapphire were transparent in the visible and had a sharp absorption edge about 290 nm. These $MgTiO_3$thin films had extremely fine feature of surface morphology, i.e., rms roughness of 0.87 nm, which was examined by AFM. We have investigated the dielectric properties of the $MgTiO_3$thin films in $MIM(Pt/MgTiO_3/Pt)$ capacitors. Dielectric constant and loss of $MgTiO_3$thin films deposited by PLD were about 24 and 1.5% at 1 MHz, respectively. These $MgTiO_3$thin films also exhibited little dielectric dispersion.

• Proceedings of the International Microelectronics And Packaging Society Conference
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• 2000.04a
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• pp.103-108
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• 2000

The texture of Al/Ti thin films deposited on low-dielectric polymer substrates has been investigated. Fifty-nm-thick Ti films and 500-nm-thick Al-1%Si-0.5%Cu (wt%) films were deposited sequentially onto low-k polymers and SiO$_2$ by using a DC magnetron sputtering system. The texture of Al thin film was determined using X-ray diffraction (XRD) theta-2theta ($\theta$-2$\theta$) and rocking curve and the microstructure of Al/Ti films on low-k polymer and SiO$_2$ substrates was characterized by Transmission electron microscopy (TEM). hall thin films deposited on SiO$_2$ had stronger texture than those deposited on low-k polymer. The texture of Al thin films strongly depended on that of Ti films. Cross-sectional TEM resealed that Brains of Ti films on SiO$_2$ substrates had grown perpendicular to the substrate, while the grains of Ti films on SiLK substrates were farmed randomly. The lower degree of 111 texture of Al thin films on low-k polymer was due to Ti underlayer.

• Journal of the Korean Ceramic Society
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• v.32 no.7
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• pp.761-768
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• 1995

Double layered BaTiO3 thin films with high dielectric constant as well as good insulating property were prepared for the application to low voltage driving thin film electroluminescent (TFEL) device. BaTiO3 thin films were formed by rf-magnetron sputtering technique. Amorphous and polycrystalline BaTiO3 thin films were deposited at the substrate temperatures of room temperature and 55$0^{\circ}C$, respectively. Two kinds of films prepared under these conditions showed high resistivity and high dielectric constant. The figure of merit (=$\varepsilon$r$\times$Eb.d) of polycrystalline BaTiO3 thin film was very high (8.43$\mu$C/$\textrm{cm}^2$). The polycrystalline BaTiO3 showed a substantial amount of leakage current (I), under the high electric field above 0.5 MV/cm. The double layered BaTiO3 thin film, i.e., amorphous BaTiO3 layer coated polycrystalline BaTiO3 thin film, was prepared by the new stacking method and showed very good dielectric and insulating properties. It showed a high dielectric constant fo 95 and leakage current density of 25 nA/$\textrm{cm}^2$ (0.3MV/cm) with the figure of merit of 20$\mu$C/$\textrm{cm}^2$. The leakage current density in the double layered BaTiO3 was much smaller than that in polycrystalline BaTiO3 under the high electric field. The saturated brightness of the devices using double layered BaTiO3 was about 220cd/$m^2$. Threshold voltage of TFEL devices fabricated on double layered BaTiO3 decreased by 50V compared to the EL devices fabricated on amorphous BaTiO3.

• Electrical & Electronic Materials
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• v.7 no.4
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• pp.325-330
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• 1994

In this paper, $TiO_2$ thin films were fabricated by Sol-Gel method and their electrical conductivity and humidity sensing properties have been investigated. The structure of Sol can be changed by controlling for hydrolysis condition. The uniform surface of thin films was confirmed by SEM. The electrical conductivity of thin films decreased with increasing heat treatment temperature. The humidity sensing properties of thin films were good in high humidity and low frequency regions.

• Journal of the Korean Solar Energy Society
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• v.30 no.3
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• pp.90-97
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• 2010

$TiO_2$ thin films for solar energy utilization were prepared on ITO coated glass by r.f magnetron sputtering with variations of working pressure, oxygen flow rate and annealing temperature. Ion insertion and extraction reaction, and ion storage properties of films were investigated by using a cyclic voltammetry. Transmittance of thin films in as-prepared, colored and bleached states was measured by UV-VIS spectrophotometer. The samples deposited in our sputtering conditions showed poor electrochromic properties. Improvement in ion storage properties of $TiO_2$ thin film was observed after annealing at temperature of $400^{\circ}C$ in air for 2 hours. It was found that $TiO_2$ thin film in electrochromic device could be used as a passive counter-electrode.

• Proceedings of the KIEE Conference
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• 2002.07c
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• pp.1488-1490
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• 2002

The (Bi,Ba,Sr)$TiO_3$[BBST] thin films were fabricated on Pt/Ti/$SiO_2$/Si substrate by RF sputtering method. We investigated the effects of Ar/$O_2$ rates on the structural properties of BBST thin films. Decreasing the $O_2$ rates, the intensity of $BaBi_4Ti_4O_{15}$ and $Bi_4Ti_3O_{12}$ peaks were increased but the $(Ba_{0.5}Sr_{0.5})TiO_3$ peak was decreased. In the case of BBST thin films deposited with condition of 90/10 (Ar/$O_2$) ratio, the composition of Ba/Sr/Bi was 0.35/0.4/0.25. Also, in the BBST thin films deposited with condition of 80/20(Ar/$O_2$) ratio, the composition of Br,Sr and Ti were relatively uniform. But the component of Bi and Ti were diffused into the Pt layers.

• Environmental Engineering Research
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• v.7 no.4
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• pp.227-237
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• 2002

Chemical vapor deposition (CVD), ion beam sputtering (IBS) and sol-gel method were used to prepare TiO$_2$ thin films for degradation of hazardous organic compounds exemplified by 2-chlorophenol (2-CP). The influence of supporting materials and coating methods on the photocatalytic activity of the TiO$_2$ thin films were also studied. TiO$_2$ thin films were coated onto various supporting materials including steel cloth (SS), copper cloth, quartz glass tube (QGT), and silica gel (SG). Results indicate that SS (37 μm)- TiO$_2$ thin film prepared by IBS method improves the photodegradation of 2-CP. Among all supporting materials studied, SS(37 μm) is found to be the best support.