• 제목/요약/키워드: TiO-N

검색결과 1,342건 처리시간 0.033초

Microstructure, Mechanical and Wear Properties of Hot-pressed $Si_3N_4-TiC$ Composites

  • Hyun Jin Kim;Soo Whon Lee;Tadachika Nakayama;Koichi Niihara
    • The Korean Journal of Ceramics
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    • 제5권4호
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    • pp.317-323
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    • 1999
  • Si3N4-TiC composites have been known as electrically conductive ceramics. $Si_3N_4-TiC$ composites with 2 wt% $Al_2O_3$ and 4 wt% $Y_2O_3$ were hot pressed in $N_2$ environment. The mechanical properties including hardness, fracture toughness, and flexural strength and tribological properties were investigated as a function of TiC content. $Si_3N_4-40$ vol% TiC composite was hot pressed at $1,750^{\circ}C$, $1,800^{\circ}C$, and $1,850^{\circ}C$ for 1, 3 and 5 hours in $N_2$ gas. Mechanical and tribolgical properties depended on microstructures, which were controlled by hte TiC content, hot press temperature, and hot press holding time. However, mechanical properties and tribological behaviors were degraded by the chemical reaction between TiC and N. The chemically reacted products such as TiCN, SiC, and $SiO_2$ were detered by the X-ray diffraction analysis.

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Pb$TiO_3$계 세라믹스의 분극전계에 따른 전기적 특성 (The Electrical Properties of Pb$TiO_3$Family Ceramics as a Function of Poling Electric Field)

  • 김성진;류주현;이수호;홍재일;사공건
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 1998년도 추계학술대회 논문집
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    • pp.259-262
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    • 1998
  • PbTi $O_3$ family ceramics can be used for the piezoelectric transformer using thickness extensional vibration mode because it is a material with the large anisotropy between electromechanical coupling factors $k_{t}$ and $k_{p}$. However, PbTi $O_3$ family ceramics have a difficult poling condition on account of its large anisotrophy. In this study, the structural and piezoelectric properties of (P $b_{0.76}$ $Ca_{0.24}$)[ $Ti_{0.96}$(M $n_{1}$3/S $b_{2/3}$)$_{0.04}$] $O_3$ system ceramics were investigated as a function of poling voltage in order to find the best poling condition.ion.n.n.ion.n.

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Preparation of Highly Visible-Light Photocatalytic Active N-Doped TiO2 Microcuboids

  • Zhao, Kang;Wu, Zhiming;Tang, Rong;Jiang, Yadong
    • 대한화학회지
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    • 제57권4호
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    • pp.489-492
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    • 2013
  • N-doped $TiO_2$ microcuboids were successfully prepared by a simple one-pot hydrothermal method. The samples were characterized by X-ray diffraction, scanning electron microscopy, diffuse reflectance spectroscopy, and X-ray photoelectron spectroscopy. It was found that the N-doped $TiO_2$ microcuboids enhanced absorption in the visible light region, and exhibited higher activity for photocatalytic degradation of model dyes. Based on the experimental results, a visible light induced photocatalytic mechanism was proposed for N-doped anatase $TiO_2$ microcuboids.

SiO/TiN 박막의 유전율 특성에 관한 연구 (Permittivity Characteristics of SiO/TiN Thin Film)

  • 김병인;이우선;김창석
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 1996년도 추계학술대회 논문집
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    • pp.18-21
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    • 1996
  • SiO 7f the SiO/TiN film is used as the insulating layer and TiN film is chosen as the barrier against the diffusion of Al which is the terminal connected by ohmic contact because TiN has the advantageous properties such as good thermal stability and very low diffusion rate in spite of it\`s relatively low specific resistance. In this study we investigated it\`s electrical and optical characteristics to determine refractive index, absorption coefficient and Permittivity. The films are differently fabricated in thickness method for this experiment.

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SiO/TiN 박막의 증착두께에 따른 유전율 특성 (Permittivity Characteristics of SiO/TiN Thin Film according to Coating Thickness)

  • 김창석;이우선;정천옥;김병인
    • E2M - 전기 전자와 첨단 소재
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    • 제10권6호
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    • pp.570-575
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    • 1997
  • In this days, the thinner film of dielectric materials is required while its capacitance is required to be still large at the VLSI process. Most of such VLSI have MOS structures. For the research on this requirement, MOS capacitors were fabricated on the silicon wafer in four different thickness groups by RF sputtering method. SiO of the SiO/TiN film is used as the insulating layer and TiN is chosen as the barrier against the diffusion of Al which is the terminal connected by ohmic contact because TiN has the advantageous properties such as good thermal stability and very low diffusion rate in spite of its relatively low specific resistance. In this study their electrical and optical characteristics are investigated to find refractive index, absorption coefficient and Permittivity.

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암모니아수를 이용한 N-doped TiO2 제조 및 부식산의 광촉매 분해 (Synthesis of N-doped Titania using Ammonium Hydroxide and Photocatalytic Degradation of Humic Acid)

  • 조아영;남윤선;이동석
    • 산업기술연구
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    • 제32권A호
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    • pp.95-102
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    • 2012
  • To advance luminance efficiency of Titania at visible range, N-doped $TiO_2$ was prepared by using ammonium hydroxide as a source of nitrogen. The photoactivities of the synthesized $TiO_2$ were evaluated on the basis of degradation of humic acid in aqueous solutions with different light sources, UV-C, UV-A and fluorescent lamp. As a result, at UV-C is high efficiency $UV_{254}$ decrease and TOC removal. In this study, the best synthetic conditions of N-doped $TiO_2$ were 5.0 M of ammonium hydroxide concentration and calcination temperature of $550^{\circ}C$. The degradation rate of humic acid as an evaluation of photoactivities of the catalysts were conducted with pH variation, decrease rate of molecular absorption, removal rate of total organic carbon and fluorescece evolution for humic acid solution. XRD and SEM were applied for analysis of surface analysis of the catalysts.

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ECR플라즈마 전처리가 RuO2 MOCVD시 핵생성에 끼치는 효과 (Nucleation Enhancing Effect of Different ECR Plasmas Pretreatment in the RUO2 Film Growth by MOCVD)

  • 엄태종;박연규;이종무
    • 한국세라믹학회지
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    • 제42권2호
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    • pp.94-98
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    • 2005
  • [ $RuO_2$ ]는 DRAM과 FRAM소자에서 고유전 capacitors의 저전극물질로서 폭넓게 연구되고 있다. 본 연구에서는 XRD, SEM, AFM 분석 등을 통하여 금속유기 화학 증착법(MOCVD)으로 $RuO_2$ 증착시 핵생성에 영향을 미치는 수소, 산소, 아르곤 ECR플라즈마 전처리 효과를 조사하였으며, 아르곤 ECR플라즈마 전처리의 경우 가장 높은 핵생성 밀도를 나타내었다. ECR 플라즈마 전처리를 통한 $RuO_2$의 핵생성 향상 메카니즘은 아르곤이나 수소 ECR 플라즈마는 TiN막 표면의 질소나 산소원자를 제거하고 따라서 TiN막 표면은 Ti-rich TiN으로 바뀌게 되는 것이다.

Characterization of Co-AC/TiO2 Composites and Their Photonic Decomposition for Organic Dyes

  • Chen, Ming-Liang;Son, Joo-Hee;Park, Chong-Yun;Shin, Yong-Chan;Oh, Hyun-Woo;Oh, Won-Chun
    • 한국재료학회지
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    • 제20권8호
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    • pp.429-433
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    • 2010
  • In this study, activated carbon (AC) as a carbon source was modified with different concentrations of cobalt chloride ($CoCl_2$) to prepare a Co-AC composite, and it was used for the preparation of Co-AC/$TiO_2$ composites with titanium oxysulfate (TOS) as the titanium precursor. The physicochemical properties of the prepared Co-AC/$TiO_2$ composites were characterized by $N_2$ adsorption at 77 K, X-ray diffraction (XRD), scanning electron microscopy (SEM), and energy dispersive X-ray (EDX) analysis. The photocatalytic treatments of organic dyes were examined under an irradiation of visible light with different irradiation times. $N_2$ adsorption data showed that the composites had decreased surface area compared with the pristine AC, which was $389\;m^2/g$. From the XRD results, the Co-AC/$TiO_2$ composites contained a mixturephase structuresof anatase and rutile, but a cobalt oxide phase was not detected in the XRD pattern. The EDX results of the Co-AC/$TiO_2$ composites confirmed the presence of various elements, namely, C, O, Ti, and Co. Subsequently, the decomposition of methylene orange (MO, $C_{14}H_{14}N_3NaO_3S$) and rhodamine B (Rh.B, $C_{28}H_{31}ClN_2O_3$) in an aqueous solution, respectively, showed the combined effects of an adsorption effect by AC and the photo degradation effect by $TiO_2$. Especially, the Co particles in the Co-AC/$TiO_2$ composites could enhance the photo degradation behaviors of $TiO_2$ under visible light.

흡수층을 이용한 무반사, 무정전용 광학박막의 설계 (The design of the optical film for absorbent ARAS coating)

  • 박문찬;손영배;정부영;이인선;황보창권
    • 한국안광학회지
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    • 제5권1호
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    • pp.7-11
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    • 2000
  • ITO, $TiN_xW_y$, Ag 등의 전도성 흡수층으로 무반사, 무정전 광학박막을 Essential Macleod 프로그램을 이용하여 설계했다. 그 결과 [공기 ${\mid}SiO_2{\mid}TiN_xW{\mid}$ 유리] 층은 단 두층코팅막으로 가시광선 파장영역(45~700nm)에서 넓게 무반사 코팅이 되었다. 이 때 반사률과 투과률은 각각 0.5% 미만과 약 75%이다. [공기 $SiO_2{\mid}TiO_2{\mid}SiO_2{\mid}ITO {\mid}$ 유리] 층은 약 0.5% 미만의 반사률이 있는 무반사 코팅이 되며 투과률은 97% 이상이며, 450nm 파장 영역부근에서 투과률이 비교적 낮은 것은 ITO의 흡수계수 영향 때문이다. 또한 [공기 $SiO_2{\mid}TiO_2{\mid}SiO_2{\mid}Ag{\mid}$ 유리] 층은 반사률이 1~2%인 AR코팅이며 투과률은 96% 이상이다.

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Ru 핵생성에 대한 ECR plasma 전처리 세정의 효과 (ECR plasma pretreatment for Ru nucleation enhancement on the TiN film)

  • 엄태종;신경철;최균석;이종무
    • 한국재료학회:학술대회논문집
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    • 한국재료학회 2003년도 춘계학술발표강연 및 논문개요집
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    • pp.120-120
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    • 2003
  • MOCVD법으로 TiN 표면에 Ru을 증착함에 있어서 Ru의 핵생성을 고양시키기 위한 ECR plasma 전처리 세정이 필요하다. 본 연구에서는 Ru 증착시 ECR $H_2O$$_2$, AE Plasma 전처리 세정 효과를 SEM, AES, XRD로 분석하였다. Ru의 핵생성은 ECR H$_2$, Ar Plasma의 노출시간이 증가할수록 향상된 반면, ECR $O_2$ plasma의 경우 노출시간이 증가할수록 핵생성 효과는 감소하였다. H$_2$ plasma 내의 H$_2$ion은 Ti와 NH$_3$를 형성하기 위해서 TiN과 반응하여 TiN을 Ti로 개질 시켰으며, Ar plasma 전처리 세정하는 동안 Ar plasma 내의 Ar ion은 TiN 또는 TiON 표면의 질소와 산소원자를 제거하는 효과를 나타내었다. 그 결과 TiN 표면상에서도 Ru의 핵생성이 쉽게 이루어졌으며 H$_2$, Ar ECR Plasma 전처리 세정에서 RU 핵생성이 향상되는 결과를 얻었다. 세 종류의 plasma중에서 Ar ECR plasma로 전처리 세정한 경우에 가장 높은 Ru 핵생성 밀도를 얻을 수 있었다.

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