• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2017.05a
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• pp.146-146
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• 2017

산화비스무트는 리튬이온과의 반응에서 현재 상용화된 그래파이트보다 높은 이론용량을 가지고 있으나, 리튬이온과의 반응에서 비교적 큰 부피팽창 특성을 가져 리튬이차전지의 음극재로서 상용화가 어려운 단점이 있다. 본 연구에서는, 이러한 문제점을 개선하기 위하여 양극산화법을 통해 충 방전시 부피팽창 변화가 매우 적은 타이타니아 나노튜브를 제조한 후, 그 위에 스프레이 방법으로 산화비스무트를 코팅하여 두 물질의 복함체를 만듦으로써 용량과 구조적 안정성을 향상시키는 방법을 소개한다. 음극재의 구조적 특성은 고분해능 주사전자현미경 (HR-SEM), 고분해능 엑스선 회절분석기(XRD)를 통해 조사하였으며, 전기화학 임피던스 분광법 (EIS), 순환전류법 (CV), 충 방전 싸이클 분석을 통해 리튬이차전지의 작동원리와 보다 향상된 성능을 규명하였다.

• Korean Journal of Materials Research
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• v.16 no.1
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• pp.50-57
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• 2006

Phase mixtures of Titanium boride, nitride, and carbide powder were produced by the reduction of a mixture of titanium and boron oxides with carbon via a gas-solid phase reaction. Boron oxides produce a vapour phase or decompose to a metal sub-oxide gaseous species when reduced at elevated temperature. The mechanism of BO sub-oxide gas formation from $B_2O_3$ and its subsequent reduction to titanium diboride for the production of uniform size hexagonal platelets is explained. These gaseous phases are critical for the formation of boride, nitride and carbide ceramics. For the production of ceramic phase composite microstructures, the nitrogen partial pressure was the most critical factor. Some calculated equilibrium phase fields has been verified experimentally. The theoretical approach therefore identifies conditions for the formation of phase mixtures. The thermodynamic and kinetic factors that govern the phase constituents are also discussed.

• Journal of the Korean Chemical Society
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• v.62 no.4
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• pp.328-332
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• 2018

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2015.05a
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• pp.50-50
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• 2015

양극산화를 통하여 타이타늄 산화물 나노튜뷰를 제조하고 전기화학적 촉매능을 향상시키기 위하여 다양한 방법의 촉매 도핑방법을 소개한다. 특히, 단일(single step) 양극산화법과 전기충격법(potential shock)를 통한 촉매도핑법을 비교하며 장횡비(high aspect ratio)가 높은 나노튜뷰에 균일하고 효율적인 촉매도핑법 및 도핑된 나노튜뷰를 활용한 물분해 실험결과를 소개한다.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2012.05a
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• pp.232-233
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• 2012

금속기판 염료감응형 태양전지 서브모듈 제작 시, 금속기판 차단층 처리 유,무에 따른 전극 상태를 비교하였다. 차단층은 titanium diisopropoxide bis(acetylacetonate) 용액을 IPA 용매에 녹여 0.15M 농도로 만들어졌으며, 스핀코팅법을 이용하여 금속기판에 박막으로 코팅되었다. 차단층 코팅을 하지 않은 금속기판의 산화전극은 소성 후 깨짐현상이 발생하였으나, 차단층 코팅한 금속기판의 산화전극은 깨짐현상이 발생하지 않았고, 그 기판을 적용하여 염료감응형 태양전지 서브모듈을 제작, 성능 평가를 진행하였다.

• Current Photovoltaic Research
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• v.11 no.1
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• pp.1-7
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• 2023

Flexible dye sensitized photovoltaics (f-DSPVs) based on plastic substrates have attracted significant interest due to their light-weight, flexibility, and compatibility with roll-to-roll processing, as well as their potential application to ubiquitous power sources. However, f-DSPVs exhibit inferior power conversion efficiencies (PCE) compared to conventional DSPVs since the fabrication process must be conducted at a low-temperature (≤ 150℃) to prevent thermal damage of the plastic substrates, which generally results in poor interconnection between the TiO₂ nanoparticles. Numerous novel low-temperature manufacturing approaches for flexible photoanode and counter electrode have been developed. In this review, current progress on low temperature strategies for f-DSPVs technology are discussed.

• Korean Journal of Materials Research
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• v.19 no.11
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• pp.601-606
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• 2009

$BiFeO_3$ (BFO) thin films were prepared on $Pt/TiO_2/Si$ substrate by r.f. magnetron sputtering. The effects of deposition pressure on electrical properties were investigated using measurement of dielectric properties, leakage current and polarization. When BFO targets were prepared, Fe atoms were substituted with Mn 0.05% to increase electrical resistivity of films. (Fe+Mn)/Bi ratio of BFO thin films increases with increasing partial pressure of $O_2$ gas. The deposited films showed the only BFO phase at 10 mTorr, the coexistence of BFO and $Bi_2O_3$ phase at 30-50 mTorr, and the only $Bi_2O_3$ phase at 70 mTorr. The crystallinity of BFO films was reduced due to the higher Bi contents and the decrease of surface mobility of atoms at high temperature. The porosity and surface roughness of films increased with the increase of the deposition pressure. The films deposited at high pressure showed low dielectric constant and high leakage current. The dielectric constant of films deposited at various deposition pressures was 84${\sim}$153 at 1 kHz. The leakage current density of the films deposited at 10${\sim}$70 mTorr was about $7{\times}10.6{\sim}1.5{\times}10.2A/cm^2$ at 100 kV/cm. The leakage current was found to be closely related to the morphology and composition of the BFO films. BFO films showed poor P-E hysteresis loops due to high leakage current.

• Proceedings of the Korean Ceranic Society Conference
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• 2000.10a
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• pp.204.2-204
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• 2000

• Proceedings of the Materials Research Society of Korea Conference
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• 1998.08a
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• pp.65.2-65
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• 1998

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2014.11a
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• pp.273-273
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• 2014

Quantum-dot sensitized solar cells (QDSCs) are an emerging class of solar cells owing to their easy fabrication, low cost and material diversity. Despite of the fact that the maximum conversion efficiency of QDSCs is still far less than that of Dye-Sensitized Solar Cells (>12 %), their unique characteristics like Multiple Exciton Generation (MEG), energy band tune-ability and tendency to incorporate multiple co-sensitizers concurrently has made QDs a suitable alternative to expensive dyes for solar cell application. Lead Sulfide (PbS) Quantum dot sensitized solar cells are theoretically proficient enough to have a photo-current density ($J_{sc}$) of $36mA/cm^2$, but practically there are very few reports on photocurrent enhancement in PbS QDSCs. Recently, $Hg^{2+}$ incorporated PbS quantumdots and Cadmium Sulfide (CdS) co-sensitized PbS solarcells are reported to show an improvement in photo-current density ($J_{sc}$). In this study, we explored the efficacy of $In_2S_3$ as an interfacial layer deposited through SILAR process for PbS QDSCs. $In_2S_3$ was chosen as the interfacial layer in order to avoid the usage of hazardous CdS or Mercury (Hg). Herein, the deposition of $In_2S_3$ interfacial layer on $TiO_2$ prior to PbS QDs exhibited a direct enhancement in the photo-current (Isc). Improved photo-absorption as well as interfacial recombination barrier caused by $In_2S_3$ deposition increased the photo-current density ($J_{sc}$) from $13mA/cm^2$ to $15.5mA/cm^2$ for single cycle of $In_2S_3$ deposition. Increase in the number of cycles of $In_2S_3$ deposition was found to deteriorate the photocurrent, however it increased $V_{oc}$ of the device which reached to an optimum value of 2.25% Photo-conversion Efficiency (PCE) for 2 cycles of $In_2S_3$ deposition. Effect of Heat Treatment, Normalized Current Stability, Open Circuit Voltage Decay and Dark IV Characteristics were further measured to reveal the characteristics of device.