• 한국표면공학회:학술대회논문집
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• 한국표면공학회 2002년도 춘계학술발표회 초록집
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• pp.46-46
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• 2002

It is well known that thin film growth and surface morphology can be substantially modified by ion-bombardment during the deposition. This is particularly important in case of thin-film deposition at low temperatures where the film growth occurs under highly nonequilibrium conditions. An attractive way to promote crystalline growth and surface morphology is deposition of additional energy in to the surface of the growing film by bombardment with hyperthermal particles. We were deposited crystalline Ti and TiN thin films on Si substrate by magnetron sputtering method with grid. Its thin films were highly smoothed and dense as increasing grid bias. In order explore the benefits of a bombardment of the growing film with high energetic particles. Ti and TiN films were deposited on Si substrates by an unbalanced magnetron sputter source with attached grid assembly for energetic ion extraction. Also, we have studied the variation of the plasma states by Langmuir probe and Optical Emission Spectroscopy (OES). The epitaxial orientation. microstructual characteristics. electrical and surface properties of the films were analyzed by XRD. SEM. Four point probe and AFM.

• 공업화학
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• 제23권4호
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• pp.405-408
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• 2012

이성분계 이온성액체를 사용하여 다양한 모양의 이산화티타늄 입자를 수정된 졸-겔법을 이용하여 제조하였다. 합성에 사용된 이온성액체의 종류에 따라 이산화티타늄 입자는 다양한 형태를 가지고 있었다. 이는 이온성액체와 유기용매계면 사이에서 형성되는 이산화티타늄이 두 물질 사이의 상호작용에 영향을 받아 입자의 모양이 형성되기 때문이다. 제조된 입자의 광촉매 성능을 측정하기 위하여 4-chlorophenol 분해반응을 실시하였다. 그 결과 1-Octyl-3-methylimidazolium tetrafluoroborate과 1-Octyl-3-methylimidazolium tetrafluoroborate를 이용하여 합성한 $TiO_2$ 입자가 가장 우수한 광촉매 활성을 나타내었다.

• 한국분말재료학회지
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• 제19권5호
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• pp.356-361
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• 2012

The ultra-fine and less agglomerated titanium carbonitride particles were successfully synthesized by magnesiothermic reduction with low feeding rate of $TiCl_4+1/4C_2Cl_4$ solution. The sub-stoichiometric titanium carbide ($TiC_{0.5{\sim}0.6}$) particles were produced by reduction of chlorine component by liquid magnesium at $800^{\circ}C$ of gaseous $TiCl_4+1/4C_2Cl_4$ and the heat treatments in vacuum were performed for 5 hours to remove the residual magnesium and magnesium chloride mixed with produced $TiC_{{\sim}0.5}$. The final $TiC_{{\sim}0.5}N_{0{\sim}0.5}$ particle with near 100 nm in mean size and high specific surface area of $65m^2/g$ was obtained by nitrification under nitrogen gas at $1,150^{\circ}C$ for 2 hrs.

• 산업기술연구
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• 제31권B호
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• pp.119-125
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• 2011

N-doped Titanium oxides were prepared by using urea as a source of nitrogen. The photoactivities of the doped $TiO_2$ were evaluated on the basis of degradation of humic acid in aqueous solutions with different light sources, ultraviolet lamp, fluorescent lamp and solar light. XRD analysis was conducted to identify the crystal structure of the synthesized photocatalysts. N-doped $TiO_2$ and $pure-TiO_2$ was anatase type. SEM results showed that spherical particles were formed, which are the characteristics of the anatase form. N doped $TiO_2$ showed higher $UV_{254}$ decrease ratio and DOC removal ratio compared to $pure-TiO_2$. The humic acid degradation reaction using the UV-A lamp and UV-C lamp was assigned to pseudo-first order reaction. For solar light, only $pure-TiO_2$ and $N-TiO_2$ exhibited the pseudo-first order reaction.

• 한국철도학회:학술대회논문집
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• 한국철도학회 2004년도 추계학술대회 논문집
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• pp.704-709
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• 2004

The wear behavior and the mechanical property of Cu-$TiB_2$ composites were examined. Cu-$TiB_2$ composites were fabricated by hot extrusion and cold drawing with $TiB_2$ contents(1$\∼$5vol.$\%$) and the size of $TiB_2$ particles(10$\mu$m and 20$\mu$m). The pin-an-disk wear test was carried out under dry sliding wear conditions which loads varied with from 20N to 100N. At the time, counterpart wear material used SM45C. The experimental results showed that the friction coefficient and wear rate decreased with increasing the $TiB_2$ contents and decreasing the size of $TiB_2$ particle. Also, the depth of plastically deformed zone decreased with increasing the $TiB_2$ contents and decreasing the size of $TiB_2$ particle.

• 한국재료학회지
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• 제25권10호
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• pp.543-546
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• 2015

$TiO_2$ nanowires were grown by thermal oxidation of TiO powder in an oxygen and nitrogen gas environment at $1000^{\circ}C$. The ratio of $O_2$ to $N_2$ in an ambient gas was changed to investigate the effect of the gas ratio on the growth of $TiO_2$nanowires. The oxidation process was carried out at different $O_2$/$N_2$ ratios of 0/100, 25/75, 50/50 and 100/0. No nanowires were formed at $O_2$/$N_2$ ratios of less than 25/75. When the $O_2$/$N_2$ ratio was 50/50, nanowires started to form. As the gas ratio increased to 100/0, the diameter and length of the nanowires increased. The X-ray diffraction pattern showed that the nanowires were $TiO_2$ with a rutile crystallographic structure. In the XRD pattern, no peaks from the anatase and brookite structures of $TiO_2$were observed. The diameter of the nanowires decreased along the growth direction, and no catalytic particles were detected at the tips of the nanowires which suggests that the nanowires were grown with a vapor-solid growth mechanism.

• 한국전기전자재료학회논문지
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• 제33권5호
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• pp.373-379
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• 2020

In this study, TiN-coated cBN (cubic-structure boron nitride) powders were successfully synthesized by a sol-gel method using titanium (IV) isopropoxide (TTIP) and by controlling the heat treatment conditions. After the sol-gel process, amorphous nano-sized TiO_x was uniformly coated on the surface of cBN powder particles. The obtained TiO_x-coated cBN powders were heated at 1,000~1,300℃ for 1 or 6 h in a flow of 95%N₂-5%H₂ mixed gas. With increasing temperature, the chemical composition of the TiO_x coating layer changed in the order of TiO₂→Ti₆O₁₁→Ti₄O₇→TiN due to reduction of the Ti ions. The TiN coating layer was observable in the samples heated at 1,200℃ and appeared as the main phase in the sample heated at 1,300℃. The resulting thickness of the TiN coating layer of the sample heated at 1,300℃ was approximately 45~50 nm.

• 한국전기전자재료학회논문지
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• 제13권6호
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• pp.545-550
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• 2000

In order to synthesize Ba-ferrite particles by molten salt method KCl and NaCl were added to basic composition to 50% by weight. X was varied from 0.0 to 1.0 to control the magnetic properties in $BaFe_{12-2x}$/ $Co_{x}$ / $Ti_{x}$ / $O_{19}$ and 1 mol% of $SiO_2$was added to control the aspect ratio of hexagonal platelets. And the effects of reaction temperatures were examined by varying the temperature from 85$0^{\circ}C$ to 120$0^{\circ}C$ with 5$0^{\circ}C$ intervals. Eutectic composition of NaCl and KCl lowered the crystallizing temperature of Ba-ferrite in molten salts than using KCl and NaCl separatly. The morphology of resulting Ba-ferrite particles was clearly hexagonal-shaped plates. $H_{c}$ and $M_{r}$ were decreased when F $e^{3+}$ was substitued with $Co^{2+}$ and $Ti^{4+}$ from x=0 to x=1.0 in $BaFe_{12-2x}$/ $Co_{x}$ / $Ti_{x}$ / $O_{19}$ . Adding 1mol% $SiO_2$in molten salt method increased the size but shortened c-axis of the hexagonal ferrites and this result is an opposite phenomenon compared with the result in solid-statge reaction.n.ion.n.

• 한국전기전자재료학회논문지
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• 제29권12호
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• pp.791-795
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• 2016

The effects of $TiO_2$ addition on the electrical insulation of AlN ceramics with 1 wt% $Y_2O_3$ as a sintering aid have been investigated. Some of $TiO_2$ has reacted with AlN powders and transformed to fine TiN particles during sintering, which was uniformly dispersed along grain boundaries of AlN. At a high electrical field (500 V/mm), the resistivity of AlN ceramics with $TiO_2$ addition of 0.2 wt% increased about 1000 times from $3{\times}10^{10}{\Omega}cm$ to $3.1{\times}10^{13}{\Omega}cm$. Based on the impedance spectroscopy measurement, it was found that $TiO_2$ addition increased dramatically electrical resistivity of AlN grains much more than that of grain boundaries. Thus, $TiO_2$ was believed to dissolve inside AlN grains to suppress ionic conduction of Al vacancies. This suppressed ionic conduction by Ti incorporation into AlN grains seems to contribute to more electrically insulating AlN ceramics.

• 한국재료학회지
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• 제10권7호
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• pp.482-488
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• 2000

(hfac) Cu(1,5-COD)(1,1,1,5,5,5-hexafluro-2,4-pentadionato Cu(I) 1,5-cyclooctadine) 증착원을 이용하여 MOCVD(metal organic chemical vapor deposition)로 Cu 박막을 형성시키고, MOCVD에 의한 TiN 기판 변화가 Cu 증착에 미치는 영향을 조사하였다. 공기 중에 노출시킨 기판은 MOCVD 에 의한 Cu 핵생성 및 초기성장에 영향을 미쳐 입자크기가 작고, 입자간의 연결성이 떨어졌으며, in-situ MOCVD Cu의 경우는 입자크기가 크고, 입자간의 연결성이 우수하여 1900$\AA$ 이상의 두께에서는 $2.0{\mu}{\Omega}-cm$ 정도의 낮은 비저항을 유지하였다. 또한 접착력에서는 in-situ MOCVD TiN 의 경우가 보다 우수하였다. 이와 같은 결과를 토대로 MOCVD Cu 성장단계를 제시하였다.