• Journal of the Korean Crystal Growth and Crystal Technology
• /
• v.32 no.2
• /
• pp.55-60
• /
• 2022

In this study, a heat treatment experiment was conducted to select a new melt composition that can easily control the unintentionally doped nitrogen (N-UID) without degrading the SiC single crystal quality during TSSG process. The experiment was carried out for about 2 hours at a temperature of 1900℃ under Ar atmosphere. The used melt composition is based on either Si-Ti 10 at% or Si-Cr 30 at%, and also Co or Sc transition metals, which are effective for carbon solubility, were added at 3 at%, respectively. After the experiment, the crucible was cross-sectionally cut, and evaluated the Si-C reaction layer on the crucible-melt interface. As a result, with Sc addition, Si-C reaction layers uniformly occurred with a Si-infiltrated layer (~550 ㎛) and a SiC interlayer (~23 ㎛). This result represented that the addition of Sc is an effective transition metal with high carbon solubility and can feed carbon sources into the melt homogeneously. In addition, Sc is well known to have low reactivity energy with nitrogen compared to other transition metals. Therefore, we expect that both growth rate and Nitrogen UID can be controlled by Si-Sc based melt in the TSSG process.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.13 no.9
• /
• pp.745-750
• /
• 2000

The (S $r_{0.85}$C $a_{0.15}$) Ti $O_3$(SCT) thin films are deposited on Pt-coated electrode (Pt/TiN/ $SiO_2$/Si) using RF sputtering method at various deposition temperature. The crystallinity of SCT thin films were increased with increase of deposition temperature in the temperature range of 200~500[$^{\circ}C$]. Also, the composition of SCT thin films were closed to stoichiometry (1.080~1.111 in A/B ratio). V-I characteristics of SCT thin films show the increasing leakage current with the increases of deposition temperature. The conduction mechanism of the SCT thin films observed in the temperature range of 25~100[$^{\circ}C$] can be divided into four regions with different mechanism by the increasing current. The region I below 0.8[MV/cm]shows the ohmic conduction. The region II between 0.9~2[MV/cm] is in proportion to J∝ $E^{1.5}$ , the region III between 2~4[MV/cm] can be explained by the Child’s law, and the region IV above 4[MV/cm]is dominated by the tunneling effect.ect.

• The Transactions of the Korean Institute of Electrical Engineers C
• /
• v.49 no.10
• /
• pp.559-563
• /
• 2000

The $(Sr_{1-x}Ca_x)TiO_3(SCT)$ thin films are deposited on Pt-coated(Pt/TiN/$SiO_2$/Si) using RF sputtering method with substitutional contents of Ca. The maximum grain of thin films is obtained by substitution of Ca at 15[mol%]. Also the composition of SCT thin films were closed to stoichiometry(1.081∼1.117 in A/B/ ratio). The dielectric constant was increased with increasing the substitutional contents of Ca, while it was decreased if the substitutional contents of Ca exceeded over 15[mol%]. The dielectric constant changes almost linearly in temperature ranges of -80∼+90[^${\circ}C$]. The temperature properties of the dielectric loss have a stable value within 0.02 independent of the substitutional contents of Ca. All SCT thin films used in this study show the phenomena of dielectric relaxation with the increase of frequency, and the relaxation frequency is observed above 2000[kHz]. The current-voltage characteristics of SCT15 thin films showed the increasing leakage current as the measuring temperature increase.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2007.06a
• /
• pp.472-473
• /
• 2007

The $(Sr_{1-x}Ca_x)TiO_3$(ST) thin films are deposited on Pt-coated electrode(Pt/TiN/$SiO_2$/Si) using RF sputtering method with substitutional contents of Ca. The maximum grain of thin films is obtained by substitution of Ca at 15[mol%]. Also, the composition of ST thin films were closed to stoichiometry(1.081~1.117 in A/B ratio). The dielectric constant changes almost linearly in temperature ranges of -80~+90[$^{\circ}C$]. The current-voltage characteristics of ST15 thin films showed the increasing leakage current as the measuring temperature increases.

• Bulletin of the Korean Chemical Society
• /
• v.29 no.5
• /
• pp.1038-1042
• /
• 2008

Mono and multilayer TiO2(Fe, $PEG_{600}$) films were deposited by the dip-coating on $SiO_2$/glass substrate using sol-gel method. In an attempt to improve the antibacterial properties of doped $TiO_2$ films, the influence of the iron oxides and polyethilenglycol ($PEG_{600}$) on the morphological, optical, surface chemical composition and biological properties of nanostructured layers was studied. Complementary measurements were performed including Spectroscopic Ellipsometry (SE), Scanning Electron Microscopy (SEM) coupled with the fractal analysis, X-Ray Photoelectron Spectroscopy (XPS) and antibacterial tests. It was found that different concentrations of Fe and $PEG_{600}$ added to coating solution strongly influence the porosity and morphology at nanometric scale related to fractal behaviour and the elemental and chemical states of the surfaces as well. The thermal treatment under oxidative atmosphere leads to films densification and oxides phase stabilization. The antibacterial activity of coatings against Escherichia Coli bacteria was examined by specific antibacterial tests.

• Transactions on Electrical and Electronic Materials
• /
• v.4 no.1
• /
• pp.15-20
• /
• 2003

NiCr alloys are prepared onto poly-Si/ $SiO_2$/Si substrates to replace Pt bottom electrode with a new one for integration of high dielectric constant materials. Alloys deposited at Ni and Cr power of 40 and 40 W showed optimum properties in the composition of N $i_{1.6}$C $r_{1.0}$. The grain size of films increases with increasing deposition temperature. The films deposited at 50$0^{\circ}C$ showed a severe agglomeration due to homogeneous nucleation. The NiCr alloys from the rms roughness and resistivity data showed a thermal stability independent of increasing annealing temperature. The 80 nm thick BST films deposited onto N $i_{1.6}$C $r_{1.0}$/poly-Si showed a dielectric constant of 280 and a dissipation factor of about 5 % at 100 kHz. The leakage current density of as-deposited BST films was about 5$\times$10$^{-7}$ A/$\textrm{cm}^2$ at an applied voltage of 1 V. The NiCr alloys are possible to replace Pt bottom electrode with new one to integrate f3r high dielectric constant materials.terials.

• ETRI Journal
• /
• v.24 no.3
• /
• pp.211-220
• /
• 2002

This study characterizes an oxide etching process in a magnetically enhanced reactive ion etching (MERIE) reactor with a $CHF_3/CF_4$ gas chemistry. We use a statistical $2^{4-1}$ experimental design plus one center point to characterize the relationships between the process factors and etch responses. The factors that we varied in the design include RF power, pressure, and gas composition, and the modeled etch responses were the etch rate, etch selectivity to TiN, and uniformity. The developed models produced 3D response plots. Etching of $SiO_2$ mainly depends on F density and ion bombardment. $SiO_2$ etch selectivity to TiN sensitively depends on the F density in the plasma and the effects of ion bombardment. The process conditions for a high etch selectivity are a 0.3 to 0.5 $CF_4$ flow ratio and a -600 V to -650 V DC bias voltage according to the process pressure in our experiment. Etching uniformity was improved with an increase in the $CF_4$ flow ratio in the gas mixture, an increase in the source power, and a higher pressure. Our characterization of via etching in a $CHF_3/CF_4$ MERIE using neural networks was successful, economical, and effective. The results provide highly valuable information about etching mechanisms and optimum etching conditions.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2007.11a
• /
• pp.264-264
• /
• 2007

$B_2Mg_{2/3}/Nb_{4/3}O_7\;(B_2MN)$ thin films and $Bi_{3/2}MgNb_{3/2}O_7\;(B_{1.5}MN)$ thin films were deposited as a function of various deposition temperatures on Pt/$TiO_2/SiO_2$/Si substrates by radio frequency magnetron sputtering system. Both of their thin films are shown to crystalline phase at $500^{\circ}C$, deposition temperature, using 100W RF power. The composition of them and structural micro properties are investigated by RBS spectrum and SEM, AFM. 200 nm-thick $B_2MN$ thin films were deposited at room temperature had capacitance density of $151nF/cm^2$ at 100kHz, dissipation factor of 0.003 and had capacitance density of $584nF/cm^2$ at 100kHz, dissipation factor of 0.0045 at $500^{\circ}C$ deposition temperature. Both of their dielectric constant deposited at room temperature and at $500^{\circ}C$ were each approximately 40 and 100.

• The Journal of the Petrological Society of Korea
• /
• v.12 no.3
• /
• pp.119-134
• /
• 2003

Yuksipryeong two-mica granite presents strongly peraluminous characteristics in both mineralogy and geochemistry. It has high aluminum saturation index with 1.15∼l.20 and high corundum with 2.20∼2.98 wt% CIPW norm. As the color index is <16% and FeO$\^$T/+ MgO + TiO$_2$is average 1.9 wt％, it corresponds to leucogranite. Yuksipryeong two-mica leucogranite shows negative linear trend for TiO$_2$, Al$_2$O$_3$, FeO, Fe$_2$O$_3$, MgO, CaO, K$_2$O, P$_2$O$\_$5/, Rb, Ba, and Sr as SiO$_2$increases, and the positive relation of Zr and Th, which result from feldspar, biotite, apatite and zircon fractionation. Pegmatitic dike has higher SiO$_2$and P$_2$O$\_$5/, but lower another major elements. Yuksipryeong two-mica leucogranite has lower Rb, but higher Ba and Sr than Manaslu, Hercynian two-mica leucogranites, and S-type granites in Lachlan Fold Belt. Pegmatitic dike has higher Rb and Nb but lower Ba, Sr, Zr, Th, and Pb contents than Yuksipryeong two-mica leucogranite, resulting in removing or mobilizing for some trace elements from the granitic melt. Yuksipryeong two-mica leucogranite has total REEs with 95.7∼l23.3 ppm, and chondrite-normalized REE pattern is very steep ((La/Yb)$\_$N/ = 6.9∼24.8), light REEs (LREEs)-enriched End heavy REEs (HREEs)- depleted pattern with low to moderate Eu anomalies (Eu/Eu＊= 0.7∼0.9). While pegmatitic dike has low total REEs with 7.0 ppm, and chondrite-normalized REE pattern is flat-pattern ((La/Yb)$\_$N/ = 2.1) with strong negative Eu anomalies (Eu/Eu＊= 0.2). The melt compositions having formed two-mica leucogranites depend on not only the source rock but also the amounts of the residual remaining after melting of source rocks. The CaO/Na$_2$O and Rb/Sr-Rb/Ba ratios depend mainly on the composition of source rocks in the strongly peraluminous granite, that is, plagioclase/clay ratio of the source rocks. Yuksipryeong two-mica leucogranite has higher CaO/Na$_2$O and lower Rb/Sr-Rb/Ba ratios than Manaslu and Hercynian two-mica leucogranites (Millevaches and Gueret) derived from clay-rich, plagioclase-poor (polite), which suggest that the probable source rocks for Yuksipryeong two-mica leucogranite is clay-poor, plagioclase-rich quartzofeldspathic rocks. As the concentrations of Al$_2$O$_3$remain nearly constant but those of TiO$_2$increases as increasing temperature in the strong peraluminous melt, the Al$_2$O$_3$/TiO$_2$ratio may reflect relative temperature at which the melts have formed. Comparing the polite-derived Manaslu and Hercynian two- mica leucogranites, Manaslu two-mica leucogranite has higher Al$_2$O$_3$/TiO$_2$ratio than latter, and its melt have formed at relatively lower temperature ($\leq$ 875$^{\circ}C$) than Hercynian two-mica leucogranites. Likewise, comparing the quartzofeldspathic rock-derived granites, Yuksipryeong two-mica granite has higher Al$_2$O$_3$/TiO$_2$, ratio than S-type granites in Lachlan Fold Belt (>875$^{\circ}C$). The melt formed Yuksipryeong two-mica leucogranite are considered to have been formed at temperature at below the maximum 875$^{\circ}C$C$.

• Proceedings of the Korean Vacuum Society Conference
• /
• 1999.07a
• /
• pp.216-216
• /
• 1999

The usage of a stationary plasma thruster (SPT) ion source, invented previously for space application in Russia, in experiments with surface modifications and film deposition systems is reported here. Plasma in the SPT is formed and accelerated in electric discharge taking place in the crossed axial electric and radial magnetic fields. Brief description of the construction of specific model of SPT used in the experiments is presented. With gas flow rate 39ml/min, ion current distributions at several distances from the source are obtained. These was equal to 1~3 mA/$\textrm{cm}^2$ within an ion beam ejection angle of $\pm$20$^{\circ}$with discharge voltage 160V for Ar as a working gas. Such an extremely high ion current density allows us to obtain the Ti metal films with deposition rate of $\AA$/sec by sputtering of Ti target. It is shown a possibility of using of reactive gases in SPT (O2 and N2) along with high purity inert gases used for cathode to prevent the latter contamination. It is shown the SPT can be operated at the discharge and accelerating boltages up to 600V. The results of presented experiments show high promises of the SPT in sputtering and surface modification systems for deposition of oxide thin films on Si or polymer substrates for semiconductor devices, optical coatings and metal corrosion barrier layers. Also, we have been tried to establish in application of the modeling expertise gained in electric and ionic propulsion to permit numerical simulation of additional processing systems. In this mechanism, it will be compared with conventional DC sputtering for film microstructure, chemical composition and crystallographic considerations.