• Journal of the Korean Vacuum Society
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• v.5 no.4
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• pp.359-364
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• 1996

$SrTiO_3$ thin films were deposited on Pt/Ti/$SiO_2$/Si substrates at low temperatures below $300^{\circ}C$ by r.f. magnetron sputtering. The materials and the electrical properties of the deposited films were investigated with controlling deposition parameters such as substrate temperature(T_s) and positive substrate d.c. bias voltage. Stoichiometric $SrTiO_3$ films were obtained at Ts of $300^{\circ}C$, but Sr content in the film was less than that of a target when Ts was lower than $300^{\circ}C$, resulting in poor electrical properties. By introducing a positive substrate d.c. bias during deposition, the crystallinity and the dielectric properties of the films were markedly improved. 400 nm thick $SrTiO_3$, films deposited at $300^{\circ}C$ with a positive substrate d.c. bias of 20V showed a columnar structure with <211> crystallographic direction and a dielectric constant of 98.

• Journal of the Korean Ceramic Society
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• v.30 no.7
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• pp.578-588
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• 1993

Highly c-axis oriented ferroelectric PbTiO3 thin films were deposited on MgO single crystal substrates by RF magnetron sputtering. We have studied the effects of substrate temperature, RF input power, gas comosition, gas pressure and deposition rate on the chemical and structural characteristics of PbTiO3 thin films. The epitaxy relationship of c-axis oriented films was found to be PbTiO3{100}//MgO(100) and their microstructures were highly mosaic. It was found that the most important parameter to achieve epitaxial PbTiO3 films was the substrate temperature. The activation energy for the epitaxy formation was about 0.92eV. Lower gas pressure and RF input power were favorable for the formation of epitaxial c-axis orientation. It was also found that the optimum oxygen content in Ar gas was 10% to obtain the stoichiometric PbTiO3 composition.

• Journal of Powder Materials
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• v.13 no.3 s.56
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• pp.199-204
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• 2006

We manufactured the metal hydrides of $(Ti_{0.88}Mg_{0.12})H_2$ using a very easy and cheap way that Ti-12%Mg blending powder was mechanically milled with liquid milling media such as isopropyl alcohol ($C_3H_8O$, containing oxygen) and hexane ($C_6H_{14}$, no oxygen) as hydrogen source. The $(Ti_{0.88}Mg_{0.12})H_2$ synthesized in isopropyl alcohol contained the high oxygen of 11.2%, while one in hexane had the low oxygen content of 0.7%. Such a difference of oxygen content affected the dehydriding behavior, phase transformation, and microstructural evolution at high temperature, which was investigated through X-ray diffraction and DSC measurements, and electron microscope observations.

• Journal of the Korean institute of surface engineering
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• v.15 no.3
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• pp.138-145
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• 1982

The effects of the simultaneous variations of the ratio of feed gases(H2/N2 Flow ratio), feed gas flow rate (H2/N2, total-flow rate) and partial pressures of TiCl4 (PTiCl41) as well as deposition time and cobalt content of the substrate on the deposition rate of the TiN Coated Cemented Tungsten Carbide Tools were investigated. Deposition was carried out in the temperature range of 930$^{\circ}C$-1080$^{\circ}C$ and an activation energy of 46.5 Kcal/mole can be calculated. Transverse rupture strength was noticeably reduced by the TiN coating on the virgin surfa-ce of Cemented Tungsten Carbide, the extent of which was decreased according to the coa-ting thickness. Microhardness value observed on the work was in the range of 1700∼2000kg/mm, which were in well agreement with the value of bult TiN. The wear resistance of TiN layers was performed by turning test and it was observed that crater and flank resistance remarkably enhanced by TiN coating.

• Journal of the Korean Vacuum Society
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• v.9 no.4
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• pp.373-378
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• 2000

There was a great difference in the formation kinetics of $TiO_2$ and $Bi_2O_3$ on silicon, but the growth of bismuth titanate (BIT) thin film was mainly limited by the formation of $TiO_2$. As a result, the BIT film was easy to be lack of bismuth. The pulse injection metalorganic chemical vapor deposition (MOCVD) process was introduced in order to overcome this problem by recovering the insufficient bismuth content in the film. By this pulse injection method, bismuth content was increased and also the uniform in-depth composition of the film was attained with a abrupt $Bi_4Ti_3O_{12}/Si$ interface. In addition, the crystallinity of $Bi_4Ti_3O_{12}$ thin film prepared by pulse injection process was greatly improved and the leakage current density was lowered by 1/2~1/3 of magnitude. Clockwise hysteresis of C-V was observed and the ferroelectric switching was confirmed for $Bi_4Ti_3O_{12}$ film deposited by pulse injection method.

• Korean Journal of Materials Research
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• v.11 no.3
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• pp.215-220
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• 2001

Amorphous Ti-Si-N films of approximately 200 and 650 thickness were reactively sputtered on Si wafers using a dc magnetron sputtering system at various $N_2$/Ar flow ratios. Their barrier properties between Cu (750 ) and Si were investigated by using sheet resistance measurements, XRD, SEM, RBS, and AES depth profiling focused on the effect of the nitrogen content in Ti-Si-N thin film on the Ti-Si-N barrier properties. As the nitrogen content increases, first the failure temperature tends to increase up to 46 % and then decrease. Barrier failure seems to occur by the diffusion of Cu into the Si substrate to form Cu$_3$Si, since no other X- ray diffraction intensity peak (for example, that for titanium silicide) than Cu and Cu$_3$Si Peaks appears up to 80$0^{\circ}C$. The optimal composition of Ti-Si-N in this study is $Ti_{29}$Si$_{25}$N$_{46}$. The failure temperatures of the $Ti_{29}$Si$_{25}$N$_{465}$ barrier layers 200 and 650 thick are 650 and $700^{\circ}C$, respectively.ely.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.11 no.11
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• pp.947-953
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• 1998

The microwave dielectric properties of X BaO-0.15($Nd_{0.87}Bi_{0.13})_2O_3-(0.85-X)TiO_2 (X=0.14~0.17) and 0.16BaO-0.15(Bi_xNd_{1-x})_2O_3-0.69TiO_2$ (X=0.12~0.15) ceramics sintered at 1320~$1380^{\circ}C$ were investigated. The microwave dielectric properties of X BaO-0.15(Nd_{0.87}Bi_{0.13})_2O_3-(0.85-X)TiO_2$ (X=0.14~0.17) can be controlled effectively by adjusting X content : with increasing X from 0.14 to 0.17 both dielectric constant and temperature coefficient of resonant frequency decreased from 94.6 to 86 and from 22 ppm/^${\circ}C to -7 ppm/^{\circ}C$, respectively, while quality factor increased from 1300 to 1920 (at 4GHz). The microwave dielectric properties of 0.16BaO-0.15(Bi_x/Nd_{1-x2}O_3 -0.69TiO_2$ (X=0.12~0.15) can be controlled effectively by adjusting X content : with increasing X from 0.12 to 0.15 both quality factor and temperature coefficient of resonant frequency decreased from 1920 to 1430 and from 9 ppm/^${\circ}C to -10 ppm/^{\circ}C$, respectively, while dielectric constant increased from 87.5 to 92.6.

• Journal of Powder Materials
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• v.29 no.1
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• pp.28-33
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• 2022

Aluminum-based powders have attracted attention as key materials for 3D printing owing to their low density, high specific strength, high corrosion resistance, and formability. This study describes the effects of TiC addition on the microstructure of the A6013 alloy. The alloy powder was successfully prepared by gas atomization and further densified using an extrusion process. We have carried out energy dispersive X-ray spectrometry (EDS) and electron backscatter diffraction (EBSD) using scanning electron microscopy (SEM) in order to investigate the effect of TiC addition on the microstructure and texture evolution of the A6013 alloy. The atomized A6013-xTiC alloy powder is fine and spherical, with an initial powder size distribution of approximately 73 ㎛ which decreases to 12.5, 13.9, 10.8, and 10.0 ㎛ with increments in the amount of TiC.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1996.05a
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• pp.277-279
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• 1996

A.C. and D.C. characteristic of TiO$_2$ added SnO$_2$ are investigated to study the electrical properties. The electrical inductivity increases as TiO$_2$content increase. The doer effect of TiO$_2$ is crucial role for the increase of electrical conductivity. The frequency-dependent ac inductivity increases with the increase of TiO$_2$ contents at low frequency region. However, at high frequency region, the difference of ac conductivity is very small. Impedance spectrums are consist of the one semicircle. Therefore, the sizes of semicircle decreases with increasing the TiO$_2$ contents.

• Journal of the Korean Ceramic Society
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• v.33 no.7
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• pp.743-754
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• 1996

In this study (Ba1-xPbx)TiO3 was synthesized by modified oxalate process in order to prevent vaporization of PbO through low temperature synthesis climinate Cl ion reproducibly substitute Pb for by and uniformly distribute ion (Ba1-xPbx)TiO3 was synthesized by coprecipitation of lead acetate barium acetate and ammonium titanyl oxalate have been used as starting materials. The substitution of Pb for Ba was reproducibly possible synthetic temperature of perovskite structure becomes lowed as the Pb concentration increases and fine partic-les (specific surface are :7.2 cm2/g) were obtained, BaTiO3 powders calcined at 90$0^{\circ}C$ for 3 hours were cubic from in XRD analysis and as Pb content was increases evident split of tetragonal peaks could be observed The optimum conditions to synthesize (Ba,Pb)TiO3 powder are the followings ; synthesis temperature (5$^{\circ}C$)