• Bulletin of the Korean Chemical Society
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• 제28권9호
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• pp.1463-1466
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• 2007

Single phases of multi-component oxides films, ZrTiO4 and Ta2Zr6O17, could be synthesized by using the combinatorial approach through surface sol-gel route, coating the appropriate mole ratio of 100 mM zirconium butoxide, tantalum butoxide and titanium butoxide precursors on Pt/Ti/SiO2/Si (100) substrate, following pyrolysis at 450 oC, and annealing them at 770 oC. Both the films and bulks of ZrTiO4 and Ta2Zr6O17 showed very stable dielectric properties in temperature range, ?140 to 60 oC, and frequency range, 100 Hz to 1 MHz, promising their applications in wide range of temperatures and frequencies. The dielectric constants of the films were lower and a little more dependent on frequency than those of the bulks. The reduction of dielectric property in the film was mainly due to the interfacial effects that worked as series and parallel-connected capacitances toward the substantial film capacitance.

• 한국표면공학회:학술대회논문집
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• 한국표면공학회 2016년도 추계학술대회 논문집
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• pp.198-198
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• 2016

An ideal orthopedic implant should provide an excellent bone-implant connection, less implant loosening and minimum adverse reactions. Commercial pure titanium (CP-Ti) and Ti alloys have been widely utilized for biomedical applications such as orthopedic and dental implants. However, being bioinert, the integration of such implant in bone was not in good condition to achieve improved osseointegraiton, there have been many efforts to modify the composition and topography of implant surface. These processes are generally classified as physical, chemical, and electrochemical methods. Plasma electrolytic oxidation (PEO) as an electrochemical route has been recently utilized to produce this kind of composite coatings. Mg ion plays a key role in bone metabolism, since it influences osteoblast and osteoclast activity. From previous studies, it has been found that Mg ions improve the bone formation on Ti alloys. PEO is a promising technology to produce porous and firmly adherent inorganic Mg containing $TiO_2$($Mg-TiO_2$ ) coatings on Ti surface, and the amount of Mg introduced into the coatings can be optimized by altering the electrolyte composition. In this study, a series of $Mg-TiO_2$ coatings are produced on Ti-6Al-4V ELI dental implant using PEO, with the substitution degree, respectively, at 0, 5, 10 and 20%. Based on the preliminary analysis of the coating structure, composition and morphology, a bone like apatite formation model is used to evaluate the in vitro biological responses at the bone-implant interface. The enhancement of the bone like apatite forming ability arises from $Mg-TiO_2$ surface, which has formed the reduction of the Mg ions. The promising results successfully demonstrate the immense potential of $Mg-TiO_2$ coatings in dental and biomaterials applications.

• 한국환경농학회지
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• 제22권2호
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• pp.124-129
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• 2003

광촉매 산화반응으로 인한 난분해성 유기오염물질의 분해효율을 증가시키기 위하여 산화반응의 매개체인 $TiO_2$ 광촉매의 새로운 제조방법을 개발하였고, 이를 이용하여 TCE의 효과적인 분해를 위한 광촉매 산화반응조의 최적 운영인자를 도출하였다. $TiO_2$ 광촉매는 해교제(Davan-C 0.24 wt%)와 결합제(PVA 0.16 wt%)를 첨가하여 슬립 캐스팅 방법으로 제조하였다. 촉매의 특성 변화에 따른 실험결과로 TCE 수용액의 분해효율이 가장 좋은 촉매의 상태는 $TiO_2$ 코팅 횟수가 1회이고 $TiO_2$ 슬립의 두께가 1 mm인 촉매로 확인되었다. 촉매 사용시간에 따른 비교에서는 사용시간이 250 시간인 촉매가 새로이 제작하여 사용한 촉매의 TCE분해효율보다 20% 정도 감소되었다. 광촉매 산화반응조의 물리적 운영인자 도출을 위한 실험결과로 산소의 전처리와 재순환을 실시하면 그렇지 않은 경우보다 TCE 분해효율이 증가되었다. 촉매의 단위 표면적당 수용액의 부피비가 $1.47\;mL/cm^2$ 이하에서 높은 TCE 분해효율을 보였으며 UV 광량의 조절시 광량이 $225\;W/cm^2{\times}100$에서 75.8%의 최대 TCE 분해효율을 보였다. TCE의 초기 농도를 조절했을 경우에는 농도가 2 mg/L 이하인 경우에 TCE의 분해효율이 높았다. 따라서 본 연구에서 제시한 방법으로 제조한 촉매를 이용하여 적절한 UV 광량과 상기한 운영조건하에 광촉매 산화반응조를 운영한다면 정수 및 폐수에 함유된 난분해성 유기성 오염물질을 제거하기 위한 공정으로 활용될 수 있을 것으로 기대된다.

• 폴리머
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• 제36권5호
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• pp.622-627
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• 2012

친환경 수성 코팅제의 물성 강화 및 VOCs의 저감 특성을 연구하기 위해서 poly(tetramethylene glycol) 2000, polycarbonate diol 2000, isophorone diisocyanate, dimethylolpropionic acid, 그리고 titanium dioxide를 사용하여 유/무기 하이브리드 수분산 폴리우레탄 코팅제를 제조하였다. R ratio([NCO]/[OH])에 따른 코팅제의 필름 물성 및 무기물의 적용으로 인한 VOCs의 저감 특성에 대해서 연구한 결과 R ratio가 1.5 이상인 경우에서 코팅제로 적합함을 확인하였으며 이는 하드 세그먼트의 영향으로 여겨지며 $TiO_2$의 적용으로 코팅 후 VOCs의 저감 특성을 확인하였다.

• 한국세라믹학회지
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• 제17권4호
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• pp.213-216
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• 1980

A glass-ceramics material of composition %SiO_2$: 38.50, $Al_2O_3$: 26.00, $Na_2O$: 18.00, CaO: 6.00, MgO: 4.00, $TiO_2$: 7.50 was strengthened by coating a series of glazes$(SiO_2-B_2O_3-Al_2O_3-CaO-PbO-Na_2O-)$, which has lower thermal expansion coefficient than that of the glass-ceramics. The thermal expansion coefficient of the glazes ranges $80~90{\times}10^{-7}$cm/cm/$^{\circ}C$, whereas that of the glass-ceramics is $115{\times}10^{-7}$cm/cm/$^{\circ}C$. The glass-ceramics was identified to be composed of nepheline, carnegieite low form, and meta sodium silicate crystal by X-ray diffraction phase analysis. The glaze, having lower melting point and appropriate thermal expansion coefficient, was tried to be stable and good at secondary heat treatment.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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• pp.344-344
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• 2014

Transparent amorphous oxide semiconductors such as a In-Ga-Zn-O (a-IGZO) have advantages for large area electronic devices; e.g., uniform deposition at a large area, optical transparency, a smooth surface, and large electron mobility >10 cm2/Vs, which is more than an order of magnitude larger than that of hydrogen amorphous silicon (a-Si;H).1) Thin film transistors (TFTs) that employ amorphous oxide semiconductors such as ZnO, In-Ga-Zn-O, or Hf-In-Zn-O (HIZO) are currently subject of intensive study owing to their high potential for application in flat panel displays. The device fabrication process involves a series of thin film deposition and photolithographic patterning steps. In order to minimize contamination, the substrates usually undergo a cleaning procedure using deionized water, before and after the growth of thin films by sputtering methods. The devices structure were fabricated top-contact gate TFTs using the a-IGZO films on the plastic substrates. The channel width and length were 80 and 20 um, respectively. The source and drain electrode regions were defined by photolithography and wet etching process. The electrodes consisting of Ti(15 nm)/Al(120 nm)/Ti(15nm) trilayers were deposited by direct current sputtering. The 30 nm thickness active IGZO layer deposited by rf magnetron sputtering at room temperature. The deposition condition is as follows: a rf power 200 W, a pressure of 5 mtorr, 10% of oxygen [O2/(O2+Ar)=0.1], and room temperature. A 9-nm-thick Al2O3 layer was formed as a first, third gate insulator by ALD deposition. A 290-nm-thick SS6908 organic dielectrics formed as second gate insulator by spin-coating. The schematic structure of the IGZO TFT is top gate contact geometry device structure for typical TFTs fabricated in this study. Drain current (IDS) versus drain-source voltage (VDS) output characteristics curve of a IGZO TFTs fabricated using the 3-layer gate insulator on a plastic substrate and log(IDS)-gate voltage (VG) characteristics for typical IGZO TFTs. The TFTs device has a channel width (W) of $80{\mu}m$ and a channel length (L) of $20{\mu}m$. The IDS-VDS curves showed well-defined transistor characteristics with saturation effects at VG>-10 V and VDS>-20 V for the inkjet printing IGZO device. The carrier charge mobility was determined to be 15.18 cm^2 V-1s-1 with FET threshold voltage of -3 V and on/off current ratio 10^9.