• 한국분말재료학회지
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• 제6권1호
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• pp.18-35
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• 1999

Phase equilibria in the system Si3N4-TiC-TiCxN1-x-C-N were determined by thermodynamic calculations (CALPHAD-method). The reaction peaction paths for Si3N4-TiC and SiC-TiC composites in the Ti-Si-C-n system were simulated at I bar N2-pressure and varying terpreatures. At a temperature of 1923 K two tie-triangles (TiC0.34N0.66+SiC+C and TiC0.13N0.87+SiC+Si3N4) and two 2-phase fieds (TiCxN1-x+SiC; 0.13

• 한국표면공학회:학술대회논문집
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• 한국표면공학회 2008년도 추계학술대회 초록집
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• pp.83-85
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• 2008

4성분계 Ti-Si-C-N 코팅막은 $TiCl_4$, $SiH_4$, $CH_4$, Ar, 그리고 $N_2$ 가스 혼합체를 이용하여 RF-PECVD 기법에 의해 Si 와 AISI 304 기판위에 합성하였다. Ti-C-(0.6)-N(0.4) 조성의 코팅막에 Si를 첨가함으로 Ti(C,N) 결정질은 줄어들고, Si3N4 및 SiC 비정질상이 나타났다. Ti-Si(9.2 at.%)-C-N의 조성에서 나노 크기의 nc-Ti(C,N) 결정질을 비정질 a-Si3N4/SiC가 둘러싸고 있는 형태의 나노 복합체를 나타내었다. 경도 24 Gpa의 Ti-C-N 코팅막은 Si를 첨가함으로 Ti-Si(9.2 at.%)-C-N 조성에서 46 Gpa의 최고 경도를 나타내었으며, 마찰계수의 경우에도 Ti-C-N 코팅막에 Si를 첨가함으로 크게 낮아졌다.

• 한국소성가공학회:학술대회논문집
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• 한국소성가공학회 2005년도 추계학술대회 논문집
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• pp.178-181
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• 2005

Quaternary Ti-Si-C-N coatings were deposited on WC-Co substrates by a hybrid coating system of arc ion plating (AIP) and sputtering techniques using Ti and Si targets, in an $Ar/N_2/CH_4$ gaseous mixture. The crystallinity, bending status, and microstructure of the Ti-Si-C-N coatings were measured by X-ray diffractometer (XRD) and X-ray photoelectron spectroscope (XPS), The micro-hardness of Ti(C,N) and Ti-Si-N coatings were about 30 and 40 GPa, respectively. As the Si was incorporated into Ti(C,N) coatings, the Ti-Si-C-N coatings having Si content of $8.9\;at.\%$ showed the maximum hardness value of about 55 GPa. In this work, the microstructure and mechanical properties of Ti-Si-C-N coatings were systematically investigated.

• 대한전기학회논문지
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• 제41권8호
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• pp.869-874
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• 1992

The physical and electrical properties of TiN/TiSiS12T bilayer were studied. The TiN/TiSiS12T bilayer was formed by rapid thermal anneal in NHS13T ambient after the Ti film was deposited on silicon substrate. The Ti film reacts with NHS13T gas to make a TiN layer at the surface and reacts with silicon to make a TiSiS12T layer at the interface respectively. It was found that the formation of TiN/TiSiS12T bilayer depends on RTA temperature. In this experiment, competitive reaction for TiN/TiSiS12T bilayer occured above $600^{\circ}C$. Ti-rich TiNS1xT layer and Ti-rich TiSiS1xT layer and Ti-rich TiSiS1xT layer were formed at $600^{\circ}C$. stable structure TiN layer TiSiS12T layer which has CS149T phase and CS154T phase were formed at $700^{\circ}C$. Both stable TiN layer and CS154T phase TiSiS12T layer were formed at 80$0^{\circ}C$. The thickness of TiN/TiSiS12T bilayer was increased as the thickness of deposited Ti film increased.

• 한국표면공학회:학술대회논문집
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• 한국표면공학회 2014년도 추계학술대회 논문집
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• pp.192-192
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• 2014

TiN, Ti(C,N), TiAlSiN, TiZrAlN, TiAlCrSiN 박막을 제조한 후, 이 들의 고온산화 특성을 SEM, EPMA, TGA, TEM, AES 등을 이용하여 조사하고, 산화기구를 제안하였다. 산화속도, 생성되는 산화물의 종류와 분포는 박막의 조성, 산화온도, 산화시간에 따라 변하였다.

• 대한전기학회논문지
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• 제41권6호
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• pp.633-639
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• 1992

The physical and electrical properties of TiN/TiSiS12T contact barrier were studied. The TiN/TiSiS12T system was formed by rapid thermal anneal in NS12T ambient after the Ti film was deposited on silicon substrate. The Ti film reacts with NS12T gas to make a TiN layer at the surface and reacts with silicon to make a TiSiS12T layer at the interface respectively. It was found that the formation of TiN/TiSiS12T system depends on RTA temperature. In this experiment, competitive reaction for TiN/TiSiS12T system occured above $600^{\circ}C$. Ti-rich TiNS1xT layer and Ti-rich TiSiS1xT layer were formed at $600^{\circ}C$. stable structure TiN layer and TiSiS1xT layer which has CS149T phase and CS154T phase were formed at $700^{\circ}C$. Both stable TiN layer and CS154T phase TiSiS12T layer were formed at 80$0^{\circ}C$. The thickness of TiN/TiSiS12T system was increased as the thickness of deposited Ti film increased.

• 한국표면공학회지
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• 제42권2호
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• pp.73-78
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• 2009

Quinary Ti-Al-Si-C-N films were successfully synthesized on SUS 304 substrates and Si wafers by a hybrid coating system combining an arc ion plating technique and a DC reactive magnetron sputtering technique. In this work, the effect of Si content on the microstructure and mechanical properties of Ti-Al-C-N films were systematically investigated. It was revealed that the microstructure of Ti-Al-Si-C-N coatings changed from a columnar to a nano-composite by the Si addition. Due to the nanocomposite microstructure of Ti-Al-Si-C-N coatings, the microhardness of The Ti-Al-Si-C-N coatings significantly increased up to 56 GPa. In addition the average friction coefficients of Ti-Al-Si-C-N coatings were remarkably decreased with Si addition. Therefore, Ti-Al-Si-C-N coatings can be applicable as next-generation hard-coating materials due to their improved hybrid mechanical properties.

• Tribology and Lubricants
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• 제4권2호
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• pp.44-51
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• 1988

Titanium carbide(TiC), Titanium nitride(TiN), and Titanium carbonnitride(Ti(C,N)) films were deposited on $Si_3N_4$-TiC composite cutting tools by chemical vapor deposition(CVD) using $TiCl_4-CH_4-H_2$, $TiCl_4-N_2-H_2$, and $TiCl_4-CH_4-N_2-H_2$ gas mixtures, respectively. The experimental results indicate that TiC coatings compared with TiN coatings on $Si_3N_4$ -TiC ceramic have an improved microstructural property, good thermal shock resistance, and good interfacial bonding. However TiN coatings compared with TiC coatings have a low friction coefficient with steel and good chemical stability. It is found by cutting test that coated insert compared with $Si_3N_4$-TiC ceramic have a superior flank and crater wear resistance. And multilayer coating compared with monolayer coating shows a improved wear resistance.

• Tribology and Lubricants
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• 제4권2호
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• pp.36-43
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• 1988

Titanium carbide(TiC) and titanium nitride(TiN) flims were deposited on $Si_3N_4$-TiC composite cutting tools by chemical vapor deposition(CVD) using $TiCl_4-CH_4-H_2$ and $TiCl_4-H_2-N_2$ gas mixtures, respectively. The nonmetal to metal ratio of deposit increases with increasing $m_{C/Ti}$(mole ratio of CH$_4$ to TiCl$_4$ in the input) for TiC coatings and $m_{N/Ti}$(mole ratio of N$_2$ to TiCl$_4$ in the input) for TiN coatings. The nearly stoiahiometric films could be obtained under the deposition condition of $m_{C/Ti}$ between 1.15 and 1.61 for TiC, and that of $m_{N/Ti}$ between 25 and 28 for TiN. Also maximum microhardness of the coatings can be obtained in these ranges. The interfacial region of TiC coatings on $Si_3N_4$-TiC ceramics is wider than that of TiN coatings according to Auger depth profile analysis, which indicates good interfacial bonding for TiC. Experimental results show that TiC coatings have an randomly equiaxed structure and Columnar structure with(220) preferred orientation can be obtained for TiN coatings. And, multilayer coatings have a dense and equiaxed structure.

• 한국재료학회지
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• 제8권12호
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• pp.1182-1189
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• 1998

Si 기판을 실온과 $600^{\circ}C$로 유지하면서 동시 증착 방법으로 (Ti+2Si)를 증착한 후 $N_2$ 분위기에서 Ti를 증발시켜 TiN($300\AA$)/(Ti+2Si, $300\AA$)/Si(100) 구조의 시료를 제작한 다음 초고진공에서 in-situ로 열처리하여 양질의 $TiN/TiSi_2$-bilayer를 형성하였다 열처리 온도가 $700^{\circ}C$ 이상에서 (111) texture 구조를 가지면서 화학 양론적으로 $Ti_{0.5}N_{0.5}$인 박막과 C54-$TiSi_2$박막이 형성되었다. $TiN/C54-TiSi_2/Si$ (100)구조의 계면은 응집 현상이 없이 평활하였으며, $C54-TiSi_2$상은 에피택셜 성장되었다. $TiN/TiSi_2$-이중구조막의 면저항은 열처리 온도에 따라 감소하였으며, $700^{\circ}C$ 이상의 열처리 온도에서는 면저항 값이 $2.5\omega/\textrm{cm}^2$ 였다.