• Journal of the Korean institute of surface engineering
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• v.24 no.1
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• pp.16-16
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• 1991

Generally brittle eta phase produced during TiC deposition has a effect on the TRS (transverse rupture strength ; thoughness). Therefore it is necessary to reduce eta(η), phase for the improvement of tool life. At this experiment some properties (TRS, bonding strength, tool life, eta phase)have been investigated by inserting TiN or TiCN underlayer between TiC layer and substrate. The results obtained were as follows; 1. by inserting underlayer eta phase were decreased and TRS was increased, but the bonding strength was decreased. 2. the diffusion of W, Co from the substrate was hindered by the underlayer. 3. TiC layer with TiCN underlayer had the finsest grain size. 4. by inserting underlayer (TiCN or TiN) the tool life was improved and especially notch and crater wear resistance was greatly improved.

• Journal of the Korean institute of surface engineering
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• v.25 no.1
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• pp.16-23
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• 1992

Generally brittle eta phase produced during TiC deposition has a bad effect on the TRS (transverse rupture strength ; thoughness). Therefore it is necessary to reduce eta(η) phase for the improvement of tool life. At this experiment some properties (TRS, bonding strength, tool life, eta phase) have been investigated by inserting TiN or TiCN underlayer between TiC layer and substrate. The results obtained were as fellows; 1. by inserting underlayer eta phase was decreased and TRS was increased, but the bonding strength was decreased. 2. the diffusion of W, Co from the substrate was hindered by the underlayer. 3. TiC layer with TiCN underlayer had the finsest gain size. 4. by inserting underlayer (TiCN or TiN) the tool life was improved and especially notch and crater wear resistance was greatly improved.

• Korean Journal of Materials Research
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• v.10 no.1
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• pp.90-96
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• 2000

The effects of the type and thickness of underlayers on the crystallographic texture and the sheet resistance of aluminum thin films were studied. Sputtered Ti and Ti/TiN were examined as the underlayer of the aluminum films. The texture and the sheet resistance of the metal thin film stacks were investigated at various thicknesses of Ti or TiN, and the sheet resistance was measured after annealing at $400^{\circ}C$ in an nitrogen ambient. For the Ti underlayer, the minimum thickness to obtain excellent texture of aluminum <111> was 10nm, and the sheet resistance of the metal stack was greatly increased after annealing due to the interdiffusion and reaction of Al and Ti. TiN between Ti and Al could suppress the Al-Ti reaction, while it deteriorated the texture of the aluminum film. For the Ti/TiN underlayer, the minimum Ti thickness to obtain excellent texture of aluminum <111> was 20nm, and the minimum thickness of TiN to function as a diffusion barrier between Ti and Al was 20nm.

• Journal of the Korean Vacuum Society
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• v.9 no.4
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• pp.394-399
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• 2000

The effects of the type and thickness of underlayer on the crystallographic texture and the sheet resistance of aluminum thin film were studied. Ti and Ti/TiN were examined as the underlayer of aluminum. Ti and TiN were prepared by ionized physical vapor deposition (I-PVD) metalorganic chemical vapor deposition (MOCVD), respectively. The texture and the sheet resistance of metal thin film stacks were investigated at various thicknesses of Ti or TiN, and the sheet resistance was measured after annealing at $400^{\circ}C$ in an nitrogen ambient. For I-PVD Ti underlayer, the excellent texture of aluminum <111> was obtained even at top of 5 nm of Ti. However, the sheet resistance of the metal stack was greatly increased after annealing due to the interdiffusion and reaction of Al and Ti. MOCVD TiN between Ti and Al could suppress the Al-Ti reaction without severe degradation of aluminum <111> texture. Excellent texture of aluminum was obtained for the MOCVD TiN thinner than 4 nm.

• Journal of the Korean Magnetics Society
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• v.11 no.3
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• pp.129-133
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• 2001

In this paper, we studied structural and magnetic properties of Ba-ferrite thin film deposited on Si(100) substrate with TiO$_2$ underlayer. Ba-ferrite thin films with TiO$_2$ underlayer were deposited by reactive RF/DC magnetron sputtering system at room temperature. TiO$_2$ underlayer was reactive sputtered with $O_2$. After deposition, the thin films were annealed at vatious temperatures to get the crystallized sample. Underlayer was used to prevent interdiffusion from Ba-ferrite thin film to substrate. The growth of Ba-ferrite thin films was influenced by TiO$_2$ underlayer. Easy magnetization direction is in-plane. From these results the Ba-ferrite film with TiO$_2$ underlayer can be used as longitudinal recording media.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.10 no.1
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• pp.17-22
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• 2000

A quaternary alloy film of $CoCr_{16.2}Pt_{10.8}Ta_4$was investigated for its magnetic properties and c-axis orientation with and without Ti underlayer. Additional elements such as Ta, Pt have been frequently introduced in CoCr alloy film for perpendicular recording as a means of improving magnetic performance. It has been reported that the addition of Pt and Ta in CoCr increase the coercivity and the magnetic isolation of columnar grains, respectively. However, CoCrPtTa perpendicular magnetic layer should be more increased its perpendicular magnetic anisotropy than at present for the application of ultrahigh recording density. The improvement of underlayers and substrate materials is one of the promised schemes to intensify the perpendicular magnetic anisotropy. In this study, the insertion of Ti underlayer shows the remarkable improvement of c-axis orientation compare with the direct deposition on the bare glass. The mechanism about this effect of Ti underlayer on CoCrPtTa is not to be clarified yet. Meanwhile, it is found that the magnetic domain of CoCrPtTa on 20 nm Ti underlayer has the continuous stripe pattern but the one of CoCrPtTa on 90 nm Ti underlayer shows the discrete mass type from the results of MFM investigation. This phenomenon is to be a distinct evidence that the improvement of perpendicular anisotropy by the adoption of Ti underlayer is originated from the reinforcement of the grain boundary segregation in CoCrPtTa alloy. Moreover, the transition of the M-H hysteresis pattern with the thickness of Ti underlayer indicates that the major contribution of Ti underlayer is not the magnetocrystalline anisotropy but the shape anisotropy due to the formation of uniform columnar grains by the nonmagnetic alloy segregation.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.07a
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• pp.208-211
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• 2000

We prepared Co-Cr-Ta and Co-Cr-Ta/Ti thin film for perpendicular magnetic recording media by facing targets sputtering system (FTS system). Ti underlayer effects on crystallographic and magnetic characteristics of Co-Cr-Ta perpendicular magnetic recording media have been investigated. Crystallgraphic and magnetic characteristic of prepared thin films were evaluated by x-ray diffractometry(XRD), vibrating sample magnetometer(VSM) and kerr hysteresis loop measurement. The coercivity and anisotropy field increase by introduced Ti underlayer when substrate temperature is higher than 150$^{\circ}C$. The c-axis dispersion angle and grain size of Co-Cr-Ta/Ti thin film is decrease than Co-Cr-Ta when substrate temperature is higher than 100$^{\circ}C$. Consequently, the use of a Ti underlayer highly orientated can be improved crystallographic and magnetic characteristics of Co-Cr -Ta perpendicular media layer.

• Proceedings of the Materials Research Society of Korea Conference
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• 1994.11a
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• pp.184-185
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• 1994

• Journal of the Korean Vacuum Society
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• v.8 no.1
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• pp.31-35
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• 1999

In this paper, the lifetime dependence as a function of the line length of Al-1%Si thin film interconnections due to electromigration in semiconductor devices was studied. Al-1%Si thin film interconnections with a pattern of straight type were formed by using a standard photolithography process. The test patterns manufactured have line lengths in the range of 100 to 1600 $mu extrm{m}$. Al-1%Si thin film interconnections with Ti underlayers showed longer lifetime than those without Ti underlayers. Ti underlayers are believed to improve electromigration resistance resulting in a longer lifetime in Al-1%Si thin film interconnections. The dependence of lifetime on the line length in Al-1%Si/Ti thin film interconnections shows a saturation tendency near 800 $\mu\textrm{m}$ line length.

• Journal of the Korean Magnetics Society
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• v.12 no.3
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• pp.94-98
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• 2002

Sputtering conditions and various underlayer such as Al, Cu, Ni, Cr, Ag, Mg, Fe, Co, Pd, Au, Pt, Mo and Hf were investigated for coercivity enhancement of 20 nm Ti/CoCrPt thin films in order to increase the coercivity of the films thinner than 20 nm. Among them, Ag and Mg were effective to increase the coercivity. Particularly 2 nm Ag was very effective to increase the coercivity and nucleation field as well as to reduce ${\alpha}$ value in CoCrPt thin film such that the coercivity of 2 nm Ag/18 nm Ti/10 nm CoCrPt film was 2200 Oe. However, it seemed that other coercivity enhancement mechanism operated in CoCrPt films because Ti (002) preferred texture was not developed with Ag underlayer contrary to a general expectation. And the coercivity and nucleation field were decreased when glass substrate with rougher surface was used.