• 한국재료학회지
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• 제19권4호
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• pp.198-202
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• 2009

For use in ultrasonic actuators, we investigated the structural and piezoelectric properties of $(1\;-\;x)Pb(Zr_{0.515}Ti_{0.485})O_3$ - $xPb(Sb_{1/2}Nb_{1/2})O_3$ + 0.5 wt% $MnO_2$ [(1 - x)PZT - xPSN + $MnO_2$] ceramics with a variation of x (x = 0.02, 0.04, 0.06, 0.08). All the ceramics, which were sintered at $1250^{\circ}C$ for 2 h, showed a typical perovskite structure, implying that they were well synthesized. A homogeneous micro structure was also developed for the specimens, and their average grain size was slightly decreased to $1.3{\mu}m$ by increasing x to 0.8. Moreover, a second phase with a pyrochlore structure appeared when x was above 0.06, which resulted in the deterioration of their piezoelectric properties. However, the 0.96PZT-0.04PSN+$MnO_2$ ceramics, which corresponds with a morphotropic phase boundary (MPB) composition in the (1 - x)PZT - xPSN + $MnO_2$ system, exhibited good piezoelectric properties: a piezoelectric constant ($d_{33}$) of 325 pC/N, an electromechanical coupling factor ($k_p$) of 70.8%, and a mechanical quality factor ($Q_m$) of 1779. The specimens with a relatively high curie temperature ($T_c$) of $305^{\circ}C$ also showed a significantly high dielectric constant (${\varepsilon}_r$) value of 1109. Therefore, the 0.96PZT - 0.04PSN + $MnO_2$ ceramics are suitable for use in ultrasonic vibrators.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2010년도 하계학술대회 논문집
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• pp.11-11
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• 2010

Thin-film-transistors (TFTs) that can be deposited at low temperature have recently attracted lots of applications such as sensors, solar cell and displays, because of the great flexible electronics and transparent. Transparent and flexible transistors are being required that high mobility and large-area uniformity at low temperature [1]. But, unfortunately most of TFT structures are used to be $SiO_2$ as gate dielectric layer. The $SiO_2$ has disadvantaged that it is required to high driving voltage to achieve the same operating efficiency compared with other high-k materials and its thickness is thicker than high-k materials [2]. To solve this problem, we find lots of high-k materials as $HfO_2$, $ZrO_2$, $SiN_x$, $TiO_2$, $Al_2O_3$. Among the High-k materials, $Al_2O_3$ is one of the outstanding materials due to its properties are high dielectric constant ( ~9 ), relatively low leakage current, wide bandgap ( 8.7 eV ) and good device stability. For the realization of flexible displays, all processes should be performed at very low temperatures, but low temperature $Al_2O_3$ grown by sputtering showed deteriorated electrical performance. Further decrease in growth temperature induces a high density of charge traps in the gate oxide/channel. This study investigated the effect of growth temperatures of ALD grown $Al_2O_3$ layers on the TFT device performance. The ALD deposition showed high conformal and defect-free dielectric layers at low temperature compared with other deposition equipments [2]. After ITO was wet-chemically etched with HCl : $HNO_3$ = 3:1, $Al_2O_3$ layer was deposited by ALD at various growth temperatures or lift-off process. Amorphous InGaZnO channel layers were deposited by rf magnetron sputtering at a working pressure of 3 mTorr and $O_2$/Ar (1/29 sccm). The electrodes were formed with electron-beam evaporated Ti (30 nm) and Au (70 nm) bilayer. The TFT devices were heat-treated in a furnace at $300^{\circ}C$ and nitrogen atmosphere for 1 hour by rapid thermal treatment. The electrical properties of the oxide TFTs were measured using semiconductor parameter analyzer (4145B), and LCR meter.

• 콘크리트학회지
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• 제9권3호
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• pp.127-135
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• 1997

본 연구에서는 콘크리트의 피로균열 성장거동을 구명하기 위하여 쐐기쪼갬실험( WST)을 수행하였다. 연구의 주안점인 피로균열 성장거동의 주요영향인자는 콘크리트의 강도로서 28,60,118 MPa 등 3가지의 강도를 변수로 택하였다. 한편, 응력비를 6,13%의 2가지로 변화시켜 그 영향을 관찰하였다. 소정의 응력비을 주기 위하여 최고피로하중수준을 75~85%, 최저응력수준을 5~10%로 각각 유지하였다. 피로실험전에 균열개구변위( CMOD)컴플라이언스 보정 실험을 수행한 후, 그 결과인 균열길이와 컴플라이언스의 관계를 피로실험 중에 균열길이를 예측하는데에 이용하였다. 또한 CMOD컴플라이언스 보정법의 타당성을 검증하기 위하여 선형탄성 파괴역학( LEFM) 및 염색법에 의하여 예측된 균열길이와 비교하였다. 실험결과에 의하여 선형탄성 파괴역학에 근거한 피로균열 성장속도 모델(da/dN- K1 관계)을 제시하였고 콘크리트의 강도가 증가함에 따라 피로균열의 성장속도가 빨라지는 것으로 평가되었다. 또한 응력비가 피로균열 성장속도에 영향을 미치는 것으로 나타났는데 강도가 증가함에 따라 그 정도가 감소하는 경향을 보였다. LEFM 과 염색법 의하여 예측된 균열길이와 비교하여 본 결과 CMOD컴플라이언스 보정법이 쐐기쪼갬실험(WST)에 적용될 수 있음이 검증되었다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2016년도 제50회 동계 정기학술대회 초록집
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• pp.258-258
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• 2016

최근 디스플레이 산업의 발전에 따라 고성능 디스플레이가 요구되며, 디스플레이의 백플레인 (backplane) TFT (thin film transistor) 구동속도를 증가시키기 위한 연구가 활발히 진행되고 있다. 트랜지스터의 구동속도를 증가시키기 위해 높은 이동도는 중요한 요소 중 하나이다. 그러나, 기존 백플레인 TFT에 주로 사용된 amorphous silicon (a-Si)은 대면적화가 용이하며 가격이 저렴하지만, 이동도가 낮다는 (< $1cm2/V{\cdot}s$) 단점이 있다. 따라서 전기적 특성이 우수한 산화물 반도체가 기존의 a-Si의 대체 물질로써 각광받고 있다. 산화물 반도체는 비정질 상태임에도 불구하고 a-Si에 비해 이동도 (> $10cm2/V{\cdot}s$)가 높고, 가시광 영역에서 투명하며 저온에서 공정이 가능하다는 장점이 있다. 하지만, 차세대 디스플레이 백플레인에서는 더 높은 이동도 (> $30cm2/V{\cdot}s$)를 가지는 TFT가 요구된다. 따라서, 본 연구에서는 차세대 디스플레이에서 요구되는 높은 이동도를 갖는 TFT를 제작하기 위하여, amorphous In-Ga-Zn-O (a-IGZO) 채널하부에 화학적으로 안정하고 전도성이 뛰어난 SnO2 채널을 얇게 형성하여 TFT를 제작하였다. 표준 RCA 세정을 통하여 p-type Si 기판을 세정한 후, 열산화 공정을 거쳐서 두께 100 nm의 SiO2 게이트 절연막을 형성하였다. 본 연구에서 제안된 적층된 채널을 형성하기 위하여 5 nm 두계의 SnO2 층을 RF 스퍼터를 이용하여 증착하였으며, 순차적으로 a-IGZO 층을 65 nm의 두께로 증착하였다. 그 후, 소스/드레인 영역은 e-beam evaporator를 이용하여 Ti와 Al을 각각 5 nm와 120 nm의 두께로 증착하였다. 후속 열처리는 퍼니스로 N2 분위기에서 $600^{\circ}C$의 온도로 30 분 동안 실시하였다. 제작된 소자에 대하여 TFT의 전달 및 출력 특성을 비교한 결과, SnO2 층을 형성한 TFT에서 더 뛰어난 전달 및 출력 특성을 나타내었으며 이동도는 $8.7cm2/V{\cdot}s$에서 $70cm2/V{\cdot}s$로 크게 향상되는 것을 확인하였다. 결과적으로, 채널층 하부에 SnO2 층을 형성하는 방법은 추후 높은 이동도를 요구하는 디스플레이 백플레인 TFT 제작에 적용이 가능할 것으로 기대된다.

• Bulletin of the Korean Chemical Society
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• 제23권2호
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• pp.346-350
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• 2002

A glassy carbon electrode (GCE) modified with 2,2':6':2”-terpyridine (2,2':6':2”-TPR) using a spin coating method was applied for the highly selective and sensitive analysis of a trace amount of $Hg_2^{2+}$ ions. Various experimental parameters, which influenced the response of the 2,2':6':2”-TPR modified electrode to $Hg_2^{2+}$ ions, were optimized. The linear sweep and differential pulse voltammograms for the 2,2':6':2”-TPR modified electrode deposited with Hg show a well-defined anodic peak at +0.65 V (vs. Ag|AgCl). After a 25 min preconcentration time in an $Hg_2^{2+}$ ion solution (0.1 M acetate buffer, pH 5.0), differential pulse voltammetry(DPV) with 2,2':6':2”-TPR modified electrode shows a linear response between $1.0\;{\times}\;10^{-6}M\;and\;2.0\;{\times}\;10^{-7}M$. The least-square treatment of these data produce an equation of I[${\mu}A$] = 0.031 + 0.005C with r = 0.980(n = 5). The detection limit of this electrode with linear sweep voltammetry and differential pulse anodic voltammetry were $2.0\;{\times}\;10^{-6}M\;and\;8.0\;{\times}\;10^{-8}M$, respectively. The presence of Pb, Fe, Cd, Ti, Ni, Co, Mg, Al, Mn, and Zn did not interfere in the analysis of the $Hg_2^{2+}$ ion. The 2,2':6':2”-TPR modified GCE has been successfully applied in determination trace amounts of Hg in a human urine sample.

• 대한의용생체공학회:의공학회지
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• 제29권2호
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• pp.132-138
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• 2008

We investigated the biomechanical properties of a newly designed self-expansion type anterior cruciate ligament (ACL) anchor. The ACL anchor consists of the ring section giving the elastic force, the wedge for maintaining in contact with the femur tunnel wall and the link suspending hamstring graft or artificial ligament. The main design parameters that determine the performance of this device were the expansion angle (${\theta}$) and the thickness ($t_R$). The Ti6Al4V anchors were heated after inserting in a jig for 1 hour at $800^{\circ}C$ in a protective argon gas atmosphere and allowed to cool to room temperature in the furnace. In order to investigate the influence of the expansion angle and the thickness of the ring on the biomechanical properties of the anchor, the maximum pull-out load, stiffness and slippage of the ACL anchor were measured using the pull-out tester, and statistical analyses were also executed. The present results showed that the design parameters gave a significant effect on the performance of the self- expansion type of anchor. The pull-out load of the ACL anchors significantly increased as the thickness of the ring section was increased, having a similar trend for both expansion angles. The ACL anchor showed about 2.5 times higher values of the pull-out load than that of the minimum load (500N)required for the "accelerated rehabilitation". The optimum ${\theta}$ and $t_R$ values of this ACL anchor were suggested to have sufficient resistance against the pull-out force, high stiffness and relatively low slippage after ACL reconstruction.

• Bulletin of the Korean Chemical Society
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• 제25권5호
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• pp.687-693
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• 2004

Composite membranes with a titania layer were prepared by soaking-rolling method with the titania sol of nanoparticles formed in the sol-gel process and investigated regarding the vapor permeation of various organic mixtures. The support modification was conducted by pressing $SiO_2$ xerogel of 500 nm in particle size under 10 MPa on the surface of a porous stainless steel (SUS) substrate and designed the multi-layered structure by coating the intermediate layer of ${\gamma}-Al_2O_3$. Microstructure of titania membrane was affected by heat-treatment and synthesis conditions of precursor sol, and titania formed at calcination temperature of 300$^{\circ}C$ with sol of [$H^+$]/[TIP]=0.3 possessed surface area of 210 $m^2$/g, average pore size of 1.25 nm. The titania composite membrane showed high $H_2/N_2$ selectivity and water/ethanol selectivity as 25-30 and 50-100, respectively. As a result of vapor permeation for water-alcohol and alcohol-alcohol mixture, titania composite membrane showed water-permselective and molecular-sieve permeation behavior. However, water/methanol selectivity of the membrane was very low because of chemical affinity of permeants for the membrane by similar physicochemical properties of water and methanol.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제42회 동계 정기 학술대회 초록집
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• pp.567-567
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• 2012

Since the carbon nanotubes (CNTs) have extraordinary material properties, many researchers are trying to make a practical application in various fields [1]. In particular, the high surface area of CNTs was fascinated for nano-template on the catalytic system. $RuO_2$ coated CNTs are useful functional nano-composites in many applications, including super capacitors, fuel cells, biosensors, and field emitters. However, the research of interaction between CNTs and $RuO_2$ was not satisfied with various fields [2]. In this study, we will introduce the change of chemical and electrical state of $RuO_2$/CNTs at different temperatures by synchrotron radiation photoemission spectroscopy (SRPES). The t-MWCNTs used in this experiment were grown on the Ni/TiN/Si substrates by chemical vapor deposition. $RuO_2$ of 4-20 nm in thickness was deposited on the t-MWNTs by sputter. The SRPES measurements were carried out at the 4B1 beamline of the Pohang Accelerator Laboratory in Korea. The result of XPS measurement indicates that the deposited $RuO_2$ on the CNTs was reduced into pure Ru at above $300^{\circ}C$. And we confirmed that the effective work function of $RuO_2$/CNTs was decreased with increasing temperature.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2011년도 제41회 하계 정기 학술대회 초록집
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• pp.377-377
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• 2011

Organic solar cells (OSCs) with low cost have been studied to apply on flexible substrate by solution process in low temperature [1]. In previous researches, conventional organic solar cell was composed of metal oxide anode, buffer layer such as PEDOT:PSS, photoactive layer, and metal cathode with low work function. In this structure, indium tin oxide (ITO) and Al was generally used as metal oxide anode and metal cathode, respectively. However, they showed poor reliability, because PEDOT:PSS was sensitive to moisture and air, and the low work function metal cathode was easily oxidized to air, resulting in decreased efficiency in half per day [2]. Inverted organic solar cells (IOSCs) using high work function metal and buffer layer replacing the PEDOT:PSS have focused as a solution in conventional organic solar cell. On the contrary to conventional OSCs, ZnO and TiO2 are required to be used as a buffer layer, since the ITO in IOSC is used as cathode to collect electrons and block holes. The ZnO is expected to be excellent electron transport layer (ETL), because the ZnO has the advantages of high electron mobility, stability in air, easy fabrication at room temperature, and UV absorption. In this study, the IOSCs based on poly [N-900-hepta-decanyl-2,7-carbazole-alt-5,5-(40,70-di-2-thienyl-20,10,30-benzothiadiazole)] (PCDTBT) : [6,6]-phenyl C71 butyric acid methyl ester (PC70BM) were fabricated with the ZnO electron-transport layer and MoO3 hole-transport layer. Thickness of the ZnO for electron-transport layer was controlled by rotation speed in spin-coating. The PCDTBT and PC70BM were mixed with a ratio of 1:2 as an active layer. As a result, the highest efficiency of 2.53% was achieved.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2013년도 제44회 동계 정기학술대회 초록집
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• pp.403-404
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• 2013

최근 scaling down의 한계에 부딪힌 DRAM과 Flash Memory를 대체하기 위한 차세대 메모리(Next Generation Memory)에 대한 연구가 활발히 진행되고 있다. ITRS (international technology roadmap for semiconductors)에 따르면 PRAM (phase change RAM), RRAM (resistive RAM), STT-MRAM (spin transfer torque magnetic RAM) 등이 차세대 메모리로써 부상하고 있다. 그 중 RRAM은 간단한 구조로 인한 고집적화, 빠른 program/erase 속도 (100~10 ns), 낮은 동작 전압 등의 장점을 갖고 있어 다른 차세대 메모리 중에서도 높은 평가를 받고 있다 [1]. 현재 RRAM은 주로 금속-산화물계(Metal-Oxide) 저항 변화 물질을 기반으로 연구가 활발하게 진행되고 있다. 하지만 근본적으로 공정 과정에서 산소에 의한 오염으로 인해 수율이 낮은 문제를 갖고 있으며, Endurance 및 Retention 등의 신뢰성이 떨어지는 단점이 있다. 따라서, 본 연구진은 산소 오염에 의한 신뢰성 문제를 근본적으로 해결할 수 있는 다양한 금속-질화물(Metal-Nitride) 기반의 저항 변화 물질을 제안해 연구를 진행하고 있으며, 우수한 열적 안정성($>450^{\circ}C$, 높은 종횡비, Cu 확산 방지 역할, 높은 공정 호환성 [2] 등의 장점을 가진 WN 박막을 저항 변화 물질로 사용하여 저항 변화 메모리를 구현하기 위한 연구를 진행하였다. WN 박막은 RF magnetron sputtering 방법을 사용하여 Ar/$N_2$ 가스를 20/30 sccm, 동작 압력 20 mTorr 조건에서 120 nm 의 두께로 증착하였고, E-beam Evaporation 방법을 통하여 Ti 상부 전극을 100 nm 증착하였다. I-V 실험결과, WN 기반의 RRAM은 양전압에서 SET 동작이 일어나며, 음전압에서 RESET 동작을 하는 bipolar 스위칭 특성을 보였으며, 읽기 전압 0.1 V에서 ~1 order의 저항비를 확보하였다. 신뢰성 분석 결과, $10^3$번의 Endurance 특성 및 $10^5$초의 긴 Retention time을 확보할 수 있었다. 또한, 고저항 상태에서는 Space-charge-limited Conduction, 저저항 상태에서는 Ohmic Conduction의 전도 특성을 보임에 따라 저항 변화 메카니즘이 filamentary conduction model로 확인되었다 [3]. 본 연구에서 개발한 WN 기반의 RRAM은 우수한 저항 변화 특성과 함께 높은 재료적 안정성, 그리고 기존 반도체 공정 호환성이 매우 높은 강점을 갖고 있어 핵심적인 차세대 메모리가 될 것으로 기대된다.