• Journal of the Korean Ceramic Society
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• 제41권3호
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• pp.266-271
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• 2004

A very small amount of SiO$_2$ was locally added in sintered BaTiO$_3$ ceramics and then heat-treated at 135$0^{\circ}C$. In the region where SiO$_2$ was not added, grain growth occurred very slowly. In the region where a very small amount of SiO$_2$ was added, however, grain growth occurred very actively. After long time annealing at 135$0^{\circ}C$, abnormal grains appeared only in the part where SiO$_2$ was added and grew up to 2 cm in size. In the grown abnormal grains or single crystals, (111) double or single twins were not observed. The growth of abnormal grains or single crystals was explained by formation of liquid phase in the region where SiO$_2$ was added. These results showed that centimeter-sized BaTiO$_3$ single crystals without (111) double or single twins could be fabricated by using abnormal grain growth.

• Korean Journal of Materials Research
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• 제5권3호
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• pp.324-332
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• 1995

전자빔 증착법을 사용하여 Ti과 Co를 Si(100) 단결정, 다결정 Si 및 Si$O_{2}$기판에 증착한 후 90$0^{\circ}C$에서 20초 급속 열처리하여, Co/Ti 이중박막으로부터의 실리사이드화 반응을 조사하였다. 단결정 시편의 경우 Ti의 두께를 5~6mm로 최소화함으로서 두께가 균일하고 기판과의 계면이 평탄하며 비저항이 낮고 열적 안정성이 높은 Co$Si_{2}$ 에피박막을 형성할 수 있었다. 그러나 다결정 시편에는 두께와 계면이 불균일하고 열적으로도 불안정한 다결정의 Co$Si_{2}$와 그 위에 두개의 Co-Ti-Si혼합층이 형성되었다. 한편 Si$O_{2}$ 우에 증착된 Co/Ti은 열처리를 하여도 확산하지 않고 그대로 남아 있어서, Co/Ti 이중박막의 Si$O_{2}$와의 반응성이 미약함을 보여 주었다.

• Journal of the Mineralogical Society of Korea
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• 제1권2호
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• pp.94-103
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• 1988

Diamond anvil cell (DAC) interfaced with a YAG laser heating system has been used to study the phase transformations on perovskite structured titanates ($BaTiO_3$, and $PbTiO_3$) and to synthesize the silicate perovskite phase from the orthopyroxenes of $MgSiO_3$ and $(Mg_{0.87},\;Fe_{0.13})SiO_3$. $BaTiO_3$ and $PbTiO_3$ transform from tetragonal phase to cubic at the pressures of approximately 2.6 GPa and 4.0 GPa at room temperature, respectively. Cubic phases of the both show wide range of stability in the extended in-situ high pressures and high temperature regions. Starting orthoenstatite of $MgSiO_3$ has yielded the perovskite phase as the major structure with ilmenite, gamma-spinel, betta-spinel and stishovite phases at ~38 GPa and ${\sim}1,000^{\circ}C$. $(Mg_{0.87},\;Fe_{0.13})SiO_3$ has shown the perovskite as the major phase with betta-spinel, stishovite and enstatite phases at ~35 GPa and ${\sim}1,000^{\circ}C$. The ilmenite phase does not occur at this condition.

• Journal of the Korean Ceramic Society
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• 제30권6호
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• pp.510-516
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• 1993

$PbTiO_3$ thin films have been formed by rapid thermal annealing(RTA) of $TiO_2$/Pb/$TiO_2$ multilayer films deposited on Si wafers by RF sputtering. Based on the optimal depositon conditions of TiO2 and Pb, $TiO_2$/Pb/$TiO_2$ three layers were deposited for 900$\AA$ each. These films were subjected to RTA process at the temperatures ranging from $400^{\circ}C$ to $900^{\circ}C$ for 30 seconds in air, and were analyzed by X-ray diffraction and transmission electron microscopy to investigate the phases and the microstructures. As a result, perovskite $PbTiO_3$ phases was obtained above $500^{\circ}C$ with the trace of unreacted $TiO_2$. RBS analysis revealed the anisotropic behavior of diffusion that the diffusivity of Pb to the bottom $TiO_2$ layer was faster than that of Pb to the top $TiO_2$ layer. The amorphous Pb-silicate was formed between film and Si substrate due to the diffusion of Pb, but Pb-silicate existed locally at the interface and the amount of that phase was very small. Therefore the effect of bottom $TiO_2$ layer as a diffusion barrier was confirmed. $PbTiO_3$ films formed by current technique showed a relative dielectric constant of 60, and the maximum breakdown field reached 170kV/cm.

• Journal of the Korean institute of surface engineering
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• 제33권1호
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• pp.3-9
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• 2000

Arc-melted alloys of TiAl-(o.25, 0.5, 1.0at%) Si were isothermally oxidized at 800, 900 and $1000^{\circ}C$ in air for 60hr. It was found that the oxidation resistance of the prepared TiAl-Si alloys was much better than that of pure TiAl, being progressively increasing with an increase in the Si content. This was attributed to the formation of $SiO_2$in addition to ($TiO_2$+$Al_2$$O_3$) oxides which formed in TiAl alloys with and without silicon additions. However, the silica formation within the oxide layer unfortunately accelerated the oxide scale spallations. During oxidation, all the elements in the base alloy diffused outward, whereas oxygen from the atmosphere diffused inward. The oxides were primarily composed of an outer thick $TiO_2$layer, an intermediate diffuse $Al_2$$O_3$layer and an inner $TiO_2$layer. A small amount of $SiO_2$was present all over the oxide scale and some voids were found around the intermediate layer.

• Korean Chemical Engineering Research
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• 제53권3호
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• pp.276-281
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• 2015

Nanostructured $TiO_2-SiO_2$ materials have widely been used as anti-reflecting coating, optical-chemical sensors and catalysts because of their superior optical and thermal properties as well as chemical durability. Web type $SiO_2$ microfibers with nano-crystalline $TiO_2$ were prepared by electrospinning of Ti-PCS mixed solution and oxidation controlled heat-treatment, rather simple than sol-gel process. Nano-crystalline anatase phase were formed for the heat-treatment up to $1200^{\circ}C$ and they were finely dispersed in the amorphous $SiO_2$ matrix.

• Journal of the Korean Institute of Telematics and Electronics D
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• 제35D권3호
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• pp.39-45
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• 1998

SrBi$_{2}$Ta$_{2}$O$_{9}$ (SBT) ferroelectric thin films for nonvolatile memory were prepared on Pt/Ti/SiO$_{2}$/Si and RuO$_{2}$/SiO$_{2}$/Si substrates by RF magnetron sputtering. The dependences of crystalline and electrical properties on the lower electrode type(Pt and RuO$_{2}$) and the annealing temperatures were investigated. SBT films regardless of their electrode types showed typeical Bi layered peroviskite crystal structures. The crystalline quality of as-deposited SBT films was improved by the rapid thermal annealing at 650.deg. C for 30 sec. The remanetn polarization of 2Pr (Pr+-Pr-) of the annealed SBT films deposited on Pt/Ti/SiO$_{2}$/Si substrates were about 11 .mu.C/cm$^{2}$ and 3 .mu.C/cm$^{2}$, respectively. The leakage currents at 3 V bias voltage were about 0.8 .mu.A/cm$^{2}$ for SBT/ Pt/Ti/SiO$_{2}$/Si and about 1 .mu.A/cm$^{2}$ for SBT/RuO$_{2}$/SiO$_{2}$/Si sample. SBT films annealed at 650 .deg. C showed no degradation in Pr values after 10$^{11}$ polarization switching cycles, indicating good fatigue properties. In addition, for SBT samples deposited on Pt/Ti/SiO$_{2}$/Si, Pr values increased to more than that of initial state, suggesting the increament of leakage current caused by repeated polarization.

• Journal of the Korean Institute of Telematics and Electronics A
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• 제30A권10호
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• pp.59-66
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• 1993

PZT thin film deposited by rf magnetron sputtering was annealed by rapid thermal process(RTP) in PbO ambient to prevent vaporing of Pb and interface reactions. Si and TiN/Ti/Si substrates were prepared to survey application of TiN/Ti layer which can prevent interface interaction with Si and crack of PZT thin films. As temperature increased. PZT thin films surface on Si substrate appeared more severe cracks which should affect electrical properties deadly. TiN/Ti(40-150${\mu}{\Omega}{\cdot}cm$) layer applied for buffer layer suppressed interface interaction and film cracking. The measured leakage current(LC) and breakdown voltage(BV) of PZT thin film on TiN/Ti/Si substrate annealed at 650$^{\circ}$C for 15 sec (thickness of 2500$\AA$) were 38 nA/cm2 and 3.5 MV/cm and dielectric constant was 310 at 1 MHz, and remanent polarization (Pr) and coercive field (Ec) were 6.4${\mu}C/cm^{2}$ and 0.2MV/cm at 60 Hz, respectively.

• Journal of the Korean Institute of Telematics and Electronics
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• 제14권1호
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• pp.5-14
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• 1977

"Electrical Properties of Barium Titanates with Addition Sb2O3." PTC BaTiO3 in low resistance at room temperature was prepatred. Al2O3, SiO2 and TiO2 were doped with a view to improving reproduction. Sb2O3 was doped as impurity in order to control of resistivity of the specimens. The relations between the amount of Sb3O3 and electrical properties wereinvestigated. Of the compositions studied, additions of 3.75mole% Al2O3, 1.25mole% SiO2, 2.25mole% TiO2 and 0.16~0.25wt% Sb2O3 to BaTiC3 was low resistivity in 14-300 ohm-cm.00 ohm-cm.

• Journal of the Korean Ceramic Society
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• 제31권12호
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• pp.1545-1551
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• 1994

Various kinetic parameters of the nucleation and crystallization in anorthite glass (CaO.Al2O3.2SiO2) were calculated by nonisothermal differential thermal analysis. Base glass and glass with TiO2 were prepared by melting. In base glass, the temperature where nucleation can occur ranges from 85$0^{\circ}C$ to 9$25^{\circ}C$ and the temperature for maximum nucleation was 900$\pm$5$^{\circ}C$. In glass with TiO2, the nucleation temperature range was 800~875$^{\circ}C$ and the maximum nucleation temperature was 850$\pm$5$^{\circ}C$. Kissinger equation, Bansal equation, and modified Ozawa equation were used for calculating activation energy for crystallization, Ec. The results showed the same activation energies for both glasses with and without TiO2 in the different equations. The shape of maximum exotherm peak and Ozawa equation were used for Avrami exponent, n. The n value for each glass was 2, indicating that each glass crystallized primarily by bulk crystallization.