• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2005년도 추계학술대회 논문집 Vol.18
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• pp.76-77
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• 2005

Single crystal $CuAlSe_2$ layers were grown on thoroughly etched semi-insulating GaAs(100) substrate at 410$^{\circ}C$ with hot wall epitaxy (HWE) system by evaporating $CuAlSe_2$ source at $680^{\circ}C$. The crystalline structure of the single crystal thin films was investigated by the photoluminescence(PL) and double crystal X-ray diffraction (DCXO). The temperature dependence of the energy band gap of the $CuAlSe_2$ obtained from the absorpt ion spectra was wel1 described by the Varshni's relation, $E_g$(T) = 2.8382 eV - ($8.86\times10^{-4}$ eV/H)$T_2$/(T + 155K). After the as-grown single crystal $CuAlSe_2$ thin films were annealed in Cu-, Se-, and Al-atmospheres, the origin of point defects of single crystal $CuAlSe_2$ thin films has been investigated by PL at 10 K. The native defects of $V_{cd}$, $V_{se}$, $Cd_{int}$, and $Se_{int}$ obtained by PL measurements were classified as donors or acceptors. And we concluded that the heat-treatment in the Cu-atmosphere converted single crystal $CuAlSe_2$ thin films to an optical n-type. Also. we confirmed that hi in $CuAlSe_2$/GaAs did not form the native defects because Al in single crystal $CuAlSe_2$ thin films existed in the form of stable bonds.

• 한국의학물리학회지:의학물리
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• 제14권2호
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• pp.74-80
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• 2003

본 연구의 목적은 핵의학 분야에서 생체 내 흡수선량의 직접 측정에 사용될 수 있는, 테프론을 씌운 TLD의 수행성을 알아보고, 흡수선량 측정 시 테프론의 영향에 대하여 분석하고자 한다. 테프론 캡슐에 든 LiF TLD-100의 반응감도를 고체 팬텀 내에서의 깊이를 달리 하며 측정하였다 성인 인체모형 팬텀을 이용하여 테프론을 씌운 TLD로써 생체 내 흡수선량을 측정하였다. 테프론을 씌우지 않은 보통의 TLD를 이용하여 구한 PDD, TMR, 그리고 생체흡수선량과 테프론을 씌운 TLD로 구한 값을 비교하였다. 보통의 TLD를 이용하여 구한 반응값과 테프론을 씌운 TLD로 구한 값의 차이는 build-up이상의 깊이에서는 같은 조건하에서 3％ 이내였다. 그러나 팬텀 표면 부근에서는 테프론 켑슐의 두께에 기인한 build-up 효과로 인해 큰 차이를 보였다. 본 연구에서 테프론 켑슐로 인하여 수 메가볼트의 방사선에 대한 TLD의 흡수선량 측정에 미치는 변화는 미미한 것으로 나타났다. 따라서 치료 환경 하에서 테프론을 씌운 TLD가 생체 내 선량측정에 매우 적합한 것으로 사료된다.

• Journal of Advanced Marine Engineering and Technology
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• 제25권6호
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• pp.1272-1280
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• 2001

SrS:Ce thin films for blue EL devices were prepared by Hot Wall Method and their crystallographic and optical characteristics were investigated by various methods. Deposition rates were increased with SrS cell temperature, but the rates were independent on substrate temperature and sulfur pressure. The optical and crystallographic characteristics were strongly affected by deposition rates. The band gap energies obtained by optical transmission spectra and Full Width at Half Maximum of (200) plane in X-ray diffraction patterns were found at 4.5-4.6eV and $0.22~0.26^{\circ}$, respectively. The photoluminescence from SrS:Ce thin tiles showed a greenish blue omission peaked at 470 and 540nm.

• 한국통신학회논문지
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• 제19권10호
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• pp.1849-1860
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• 1994

본 논문은 비정질 회토류 천이 급속 박막내에서의 자벽 역학(Magnetic domain wall dynamics)을 란다우 리프쉬츠 길버트 (Landau Lifshitz Gilbert) 방정식을 이용한 수치적 해석을 수행하여 연구하였다. 박막을 이차원 정방형 격자($30\times30$)로 나누고, 각 격자 셀(Cell)에 쌍극자간 존재한다고 상정하여, 이들 쌍극자간의 상호 교환 작용과 자기 이방성, 외부 인가 자계, 그리고 감자계의 영향이 고려되었다. 단축 자기 이방성이 존재하고 역방향의 자화가 존재한다고 가정된 상태에서 자벽이 형성되는 시간과 자벽의 두께를 알아보았다. 또한 외부 자계의 인가에 따른 자벽 이동을 연구하였다. 시뮬레이션 결과, 감자계를 고려했을 때 자벽 형성 시간이 상당히 빨라졌고, 평균 자벽의 이동도(Mobility)는 약간 증가되었다.

• Structural Engineering and Mechanics
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• 제66권6호
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• pp.713-727
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• 2018

Thin-walled mental tubes under lateral crushing are desirable and reliable energy absorbers against impact or blast loads. However, the early formations of plastic hinges in the thin cylindrical wall limit the energy absorption performance. This study investigates the energy absorption performance of a simple, light and efficient energy absorber called the ring stiffened tube. Due to the increase of section modulus of tube wall and the restraining effect of the T-stiffener flange, key energy absorption parameters (peak crushing force, energy absorption and specific energy absorption) have been significantly improved against the empty tube. Its potential application in the offshore blast wall design has also been investigated. It is proposed to replace the blast wall endplates at the supports with the energy absorption devices that are made up of the ring stiffened tubes and springs. An analytical model based on beam vibration theory and virtual work theory, in which the boundary conditions at each support are simplified as a translational spring and a rotational spring, has been developed to evaluate the blast mitigation effect of the proposed design scheme. Finite element method has been applied to validate the analytical model. Comparisons of key design criterions such as panel deflection and energy absorption against the traditional design demonstrate the effectiveness of the proposed design in blast alleviation.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2003년도 하계학술대회 논문집 Vol.4 No.1
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• pp.352-356
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• 2003

A stoichiometric mixture of evaporating materials for $CuGaSe_2$ single crystal am films was prepared from horizontal electric furnace. Using extrapolation method of X-ray diffraction patterns for the polycrystal $CuGaSe_2$, it was found tetragonal structure whose lattice constant $a_0$ and $c_0$ were $5.615\;{\AA}\;and\;11.025\;{\AA}$, respectively. To obtain the single crystal thin films, $CuGaSe_2$ mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the hot wall epitaxy (HWE) system. The source and substrate temperatures were $610^{\circ}C$ and $450^{\circ}C$, respectively, The crystalline structure of the single crystal thin films was investigated by the photoluminescence and double crystal X-ray diffraction (DCXD). The carrier density and mobility of $CuGaSe_2$ single crystal thin films measured with Hall effect by van der Pauw method are $9.24{\times}10^{16}\;cm^{-3}$ and $295\;cm^2/V{\cdot}s$ at 293 K, respectively. The temperature dependence of the energy band gap of the $CuGaSe_2$ obtained from the absorption spectra was well described by the Varshni's relation, $E_g(T)\;:\;1.7998\;eV\;-\;(8.7489\;{\times}\;10^{-4}\;eV/K)T^2(T\;+\;335\;K)$. After the as-grown $CuGaSe_2$ single crystal thin films was annealed in Cu-, Se-, and Ga-atmospheres, the origin of point defects of $CuGaSe_2$ single crystal thin films has been investigated by the photoluminescence(PL) at 10 K. The native defects of $V_{CU}$, $V_{Se}$, $CU_{int}$, and $Se_{int}$, obtained by PL measurements were classified as a donors or accepters type. And we concluded that the heat-treatment in the Cu-atmosphere converted $CuGaSe_2$ single crystal thin films to an optical n-type. Also, we confirmed that Ga in $CuGaSe_2/GaAs$ did not form the native defects because Ga in $CuGaSe_2$ single crystal thin films existed in the form of stable bonds.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2009년도 하계학술대회 논문집
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• pp.120-121
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• 2009

Single crystalline $ZnIn_2Se_4$ layers were grown on thoroughly etched semi-insulating GaAs(100) substrate at $400^{\circ}C$ with hot wall epitaxy (HWE) system by evaporating, $ZnIn_2Se_4$ source at $630^{\circ}C$. After the as-grown $ZnIn_2Se_4$ single crystalline thin films was annealed in Zn-, Se-, and In-atmospheres, the origin of point defects of $ZnIn_2Se_4$single crystalline thin films has been investigated by the photoluminescence(PL) at 10 K The native defects of $V_{Zn}$, $V_{Se}$, $Zn_{int}$ and $Se_{int}$ obtained by PL measurements were classified as a donors or acceptors type. And we concluded that the heat-treatment in the Se-atmosphere converted $ZnIn_2Se_4$ single crystalline thin films to an optical p-type. Also, we confirmed that In in $ZnIn_2Se_4$/GaAs did not form the native defects because In in $ZnIn_2Se_4$ single crystalline thin films existed in the form of stable bonds.

• 한국기계가공학회지
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• 제21권6호
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• pp.81-88
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• 2022

Titanium alloy (Ti-6Al-4V) has excellent mechanical properties and high specific strength; therefore, it is widely used in aerospace, automobile, defense, engine parts, and bio fields. Particularly in the aerospace field, as it has a low specific gravity and rigidity, it is used for the purpose of increasing energy efficiency through weight reduction of parts, and most have a thin-walled structure. However, it is extremely difficult to machine thin-walled shapes owing to vibration and deformation. In the case of thin-walled structures, the cutting forces and vibrations rapidly increase depending on the cutting conditions, significantly affecting the surface integrity and tool life. In this study, machining experiments on thin-wall milling of a titanium alloy (Ti-6Al-4V) were conducted for each experimental condition with different axial depths of cut, radial depth of cut, and machining sequence. The machining characteristics were analyzed, and an effective machining method was derived by a comprehensive analysis of the machined surface conditions and cutting signals.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2007년도 하계학술대회 논문집 Vol.8
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• pp.97-98
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• 2007

A stoichiometric. mixture of evaporating materials for $CuGaSe_2$ single crystal thin films was prepared from horizontal electric furnace. Using extrapolation method of X-ray diffraction patterns for the polycrystal $CuGaSe_2$, it was found tetragonal structure whose lattice constant $a_0$ and $c_0$ were $5.615\;{\AA}$ and $11.025\;{\AA}$, respectively. To obtain the single crystal thin films, $CuGaSe_2$ mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the hot wall epitaxy (HWE) system. The source and substrate temperatures were $610^{\circ}C$ and $450^{\circ}C$, respectively. The crystalline structure of the single crystal thin films was investigated by the photoluminescence and double crystal X-ray diffraction (DCXD). The carrier density and mobility of $CuGaSe_2$ single crystal thin films measured with Hall effect by van der Pauw method are $4.87{\times}10^{17}\;cm^{-3}$ and $129\;cm^2/V{\cdot}s$ at 293 K, respectively. The temperature dependence of the energy band gap of the $CuGaSe_2$ obtained from the absorption spectra was well described by the Varshni's relation, $E_g(T)\;=\;1.7998\;eV\;-\;(8.7489\;{\times}\;10^{-4}\;eV/K)T^2/(T\;+\;335\;K)$.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2004년도 추계학술대회 논문집 Vol.17
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• pp.234-238
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• 2004

A stoichiometric mixture of evaporating materials for $CuInSe_2$ single crystal thin films was prepared from horizontal electric furnace. To obtain the single crystal thin films, $CuInSe_2$ mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the hot wall epitaxy (HWE) system. The source and substrate temperatures were $620^{\circ}C$ and $410^{\circ}C$, respectively. The crystalline structure of the single crystal thin films was investigated by the photoluminescence and double crystal X-ray diffraction (DCXD). The carrier density and mobility of $CuInSe_2$ single crystal thin films measured with Hall effect by van der Pauw method are $9.62{\times}10^{l6}\;cm^{-3}$ and $296\;cm^2/V{\cdot}s$ at 293 K, respectively. The temperature dependence of the energy band gap of the $CuInSe_2$ obtained from the absorption spectra was well described by the Varshni's relation, $E_g(T)\;=\;1.1851\;eV\;-\;(8.99{\times}10^{-4}\;eV/K)T^2/(T+153K)$. The crystal field and the spin-orbit splitting energies for the valence band of the $CuInSe_2$ have been estimated to be 0.0087 eV and 0.2329 eV at 10K, respectively, by means of the photocurrent spectra and the Hopfield quasicubic model. These results indicate that the splitting of the ${\Delta}_{so}$ definitely exists in the $\Gamma_6$ states of the valence band of the $CuInSe_2$. The three photocurrent peaks observed at 10K are ascribed to the $A_1-$, $B_1-$, and $C_1$-exciton peaks for n = 1.