• Earthquakes and Structures
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• v.7 no.5
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• pp.667-689
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• 2014

Structural walls (also known as shear walls) are one of the common lateral load resisting elements in reinforced concrete (RC) buildings in seismic regions. The performance of RC structural walls in recent earthquakes has exposed some problems with the existing design of RC structural walls. The main issues lie around the buckling of bars, out-of plane deformation of the wall (especially the zone deteriorated in compression), reinforcement getting snapped beneath a solitary thin crack etc. This study compares performance of a typical wall designed by different standards. For this purpose, a case study RC shear wall is taken from the Hotel Grand Chancellor in Christchurch which was designed according to the 1982 version of the New Zealand concrete structures standard (NZS3101:1982). The wall is redesigned in this study to comply with the detailing requirements of three standards; ACI-318-11, NZS3101:2006 and Eurocode 8 in such a way that they provide the same flexural and shear capacity. Based on section analysis and pushover analysis, nonlinear responses of the walls are compared in terms of their lateral load capacity and curvature as well as displacement ductilities, and the effect of the code limitations on nonlinear responses of the different walls are evaluated. A parametric study is also carried out to further investigate the effect of confinement length and axial load ratio on the lateral response of shear walls.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.11a
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• pp.239-242
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• 2004

A stoichiometric mixture of evaporating materials for $CdIn_2S_4$ single crystal thin films was prepared from horizontal furnace. To obtain the single crystal thin films, $CdIn_2S_4$ mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by hot wall epitaxy(HWE) system. The source and substrate temperatures were $630^{\circ}C$ and $420^{\circ}C$ respectively. The crystalline structure of single crystal thin films was investigated by the photoluminescence and double crystal X-ray diffraction(DCXD). The carrier density and mobility of $CdIn_2S_4$ single crystal thin films measured from Hall effect by van der Pauw method are $9.01{\times}10^{16}\;cm^{-3}$ and $219\;cm^2/V{\cdot}s$ at 293 K, respectively. From the optical absorption measurement, the temperature dependence of energy band gap on $CdIn_2S_4$ single crystal thin films was found to be $E_g(T)\;=\;2.7116\;eV\;-\;(7.74{\times}10^{-4}\;eV)T^2/(T+434)$. After the as-grown $CdIn_2S_4$ single crystal thin films was annealed in Cd-, S-, and In-atmospheres, the origin of point defects of $CdIn_2S_4$ single crystal thin films has been investigated by the photoluminescence(PL) at 10 K.

• Composites Research
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• v.30 no.1
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• pp.7-14
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• 2017

In this paper, the inter-lamina shear strength (ILSS) of multi-wall carbon nanotube (MWNT) reinforced carbon fiber reinforced plastics (CFRP) and thin-ply composites were verified under low earth orbit (LEO) space environment. CFRP, MWNT reinforced CFRP, thin-ply CFRP and MWNT reinforced thin-ply CFRP were tested after aging by using accelerated ground simulation equipment. The used ground simulation equipment can simulate high vacuum ($2.5{\times}10^{-6}torr$), atomic oxygen (AO, $9.15{\times}10^{14}atoms/cm^2{\cdot}s$), ultraviolet light (UV, 200 nm wave length) and thermal cycling ($-70{\sim}100^{\circ}C$) simultaneously. The duration of aging experiment was twenty hours, which is an equivalent duration to that of STS-4 space shuttle condition. After the aging experiment, ILSS were measured at room temperature ($27^{\circ}C$), high temperature ($100^{\circ}C$) and low temperature ($-100^{\circ}C$) to verify the effect of operation temperature. The MWNT and thin-ply shows good improvement of ILSS at ground condition especially with the thin-ply. And after LEO exposure large degradation of ILSS was observed at MWNT added composite due to the thermal cycle. And the degradation rate was much higher under the high temperature condition. But, at the low temperature condition, the ILSS was largely recovered due to the matrix toughening effect.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.21 no.9
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• pp.818-824
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• 2008

The Separated Pulsed Laser Deposition (SPLD) technique uses two chambers that are separated by a conic metallic wall with a central orifice. The pressures of ablation chamber and deposition chamber were controlled by the differential vacuum system. We deposited zinc oxide (ZnO) thin films by SPLD method to obtain high quality thin films. When the bias voltage of +500 V was applied between a substrate and an orifice, the ZnO thin film was deposited efficiently. The deposited ZnO thin film at ablation chamber gas pressure of Ar 5 mTorr showed the sharpest ultraviolet absorption edge indicatory the band gap of about 3.1 eV. ZnO thin films were deposited using effect of electric and magnetic fields in the SPLD method. E${\times}$B drift happened by an electric fields and a magnetic fields, activated plasma plume, as a result the film surface became very smooth. When the bias voltage of +500 V and magnet of 0,1 T were applied the ZnO thin films surface state showed high quality. Grain size was 41.99 nm and RMS was 0.84 nm.

• Proceedings of the KSME Conference
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• 2003.11a
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• pp.228-232
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• 2003

It has recently been shown that the instability of thin film of a nanoscale can be used in the processes of building nano-size structures, which have potential practical importance in nanotechnology. Molecular dynamics simulation is conducted to probe the thin fluid film of a nano-size and its dynamic behavior during destabilization and structure formation. Non-continuum characteristics are shown in the properties like pressure tensor, viscosity, and thermal conductivity. The thermocapillary force induces a slow growth of long waves in the scale considered. A long-range interaction with the solid wall induces vertical structures, whose formation time and space between neighbors are proportional to the strength of the interaction.

• Structural Engineering and Mechanics
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• v.24 no.3
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• pp.355-374
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• 2006

Thin walled steel bridge-piers/columns are vulnerable to damage, when subjected to earthquake excitations. Local buckling, global buckling or interaction between local and global buckling usually is the cause of this damage, which results in significant strength reduction of the member. In this study new innovative design concepts, "thin-walled corrugated steel columns" and "thin-walled cellular steel columns" are presented, which allow the column to undergo large plastic deformations without significant strength reduction; hence dissipate energy under cyclic loading. It is shown that, compared with the conventional designs, circular and stiffened box sections, these new innovative concepts might results in cost-effective designs, with improved buckling and ductility properties. Using a finite element model, that takes the non-linear material properties into consideration, it is shown that the corrugations will act like longitudinal stiffeners that are supporting each other, thus improving the buckling behavior and allowing for reduction of the overall wall thickness of the column.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.06a
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• pp.159-160
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• 2006

$AgGaSe_2$ single crystal thin films grown by using hot wall epitaxy (HWE) system. The single crystal thin films were investigated by photoluminescence and double crystal X-ray diffraction(DCXD) measurement. From the photoluminescence measurement of $AgGaSe_2$ single crystal thin film, we observed free excition ($E_x$) observable only in high quality crystal and neutral bound exciton ($D^{\circ}$,X) having very strong peak intensity. And, the full width at hall maximum and binding energy of neutral donor bound excition were 8 meV and 14.1 meV, respectively. By Haynes rule, an activation energy of impurity was 141 meV.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.06a
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• pp.136-137
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• 2006

The stochiometric mix of evaporating materials for the $ZnGa_2Se_4$ single crystal thin films were prepared from horizental furnace. To obtains the single crystal thin films, $ZnGa_2Se_4$ mixed crystal were deposited on throughly etched Si(100) by the Hot Wall Epitaxy (HWE) system. The temperates of the source and the substrate were $590^{\circ}C$ and $450^{\circ}C$, respectively. The crystalline structure of single crystal thin films was investigated by the double crystal X-ray diffraction(DCXD). Hall effect on this sample was measured by the method of van der Pauw and studied on carrier density and mobility dependence on temperature.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.06a
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• pp.182-183
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• 2006

$CuInSe_2$ single crystal thin films was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the hot wall epitaxy (HWE) system. The temperature dependence of the energy band gap of the $CuInSe_2$ obtained from the absorption spectra was well described by the Varshni's relation, $E_g(T)\;=\;1.1851\;eV\;-\;(8.99\;{\times}\;10^{-4}\;eV/K)T^2/(T\;+\;153K)$. After the as-grown $CuInSe_2$ single crystal thin films was annealed in Cu-, Se-, and In-atmospheres, the origin of point defects of $CuInSe_2$ single crystal thin films has been investigated by the photoluminescence(PL) at 10 K.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.11a
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• pp.122-123
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• 2007

Single crystal $AgGaSe_2$ layers were grown on thoroughly etched semi-insulating GaAs(100) substrate at $420^{\circ}C$ with hot wall epitaxy (HWE) system by evaporating $AgGaSe_2$ source at $630^{\circ}C$. The temperature dependence of the energy band gap of the $AgGaSe_2$ obtained from the absorption spectra was well described by the Varshni's relation, $E_g$(T)=1.9501 eV - $(8.79{\times}10^{-4}\;eV/K)T^2$/(T+250 K). The crystal field and the spin-orbit splitting energies for the valence band of the $AgGaSe_2$ have been estimated to be 0.3132 eV and 0.3725 eV at 10 K, respectively, by means of the photocurrent spectra and the Hopfield quasicubic model. These results indicate that the splitting of the ${\Delta}so$ definitely exists in the ${\Gamma}_5$ states of the valence band of the $AgGaSe_2$. The three photocurrent peaks observed at 10 K are ascribed to the $A_{1^-},\;B_{1^-},\;and\;C_{1^-}$exciton peaks for n=1.