• Title/Summary/Keyword: Thin-wall

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Prediction of Transient Temperature Distributions in the Wall of Curved Piping System Subjected to Internally Thermal Stratification Flow (열성층유동 곡관벽에서의 과도온도분포 예측)

  • Jo, J.C.;Cho, S.J.;Kim, Y.I.;Park, J.Y.;Kim, S.J.;Choi, S.K.
    • Proceedings of the KSME Conference
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    • 2001.06e
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    • pp.474-481
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    • 2001
  • This paper addresses a numerical method for predicting transient temperature distributions in the wall of a curved pipe subjected to internally thermal stratification flow. A simple and convenient numerical method of treating the unsteady conjugate heat transfer in the non-orthogonal coordinate systems is presented. The proposed method is implemented in a finite volume thermal-hydraulic computer code based on a cell-centered, non-staggered grid arrangement, the SIMPLEC algorithm, a higher-order bounded convection scheme, and the modified version of momentum interpolation method. Calculations are performed for the transient evolution of thermal stratification in two curved pipes, where the one has thick wall and the other has so thin wall that its presence can be negligible in the heat transfer analysis. The predicted results show that the thermally stratified flow and transient conjugate heat transfer in a curved pipe with a finite wall thickness can be satisfactorily analyzed by the present numerical method, and that the neglect of wall thickness in the prediction of pipe wall temperature distributions can provide unacceptably distorted results.

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Numerical Analysis of Conjugate Heat Transfer in a Curved Piping System Subjected to Internal Stratified Laminar Flow (층류 열성층유동 곡관에 대한 복합열전달 수치해석)

  • Jo Jong Chull;Choi Hoon-Ki
    • Journal of computational fluids engineering
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    • v.7 no.3
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    • pp.35-43
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    • 2002
  • This paper addresses a numerical method for predicting transient temperature distributions in the wall of a curved pipe subjected to internal laminar thermally-stratified flow. A simple and convenient numerical method of treating the unsteady conjugate heat transfer in non-orthogonal coordinate systems is presented. Numerical calculations are performed for the transient evolution of thermal stratification in two curved pipes, where one has thick wall and the other has so thin wall that its presence can be negligible in the heat transfer analysis. The predicted results show that the thermally stratified flow and transient conjugate heat transfer in a curved pipe with a finite wall thickness can be satisfactorily analyzed by the present numerical method, and that the neglect of wall thickness in the prediction of pipe wall temperature distributions can provide unacceptably distorted results for the cases of pipes with thick wall such as safety related-piping systems of nuclear power plant.

Radiation-Laminar Free Convection in a Square Duct with Specular Reflection by Absorbing-Emitting Medium

  • Byun, Ki-Hong;Im, Moon-Hyuk
    • Journal of Mechanical Science and Technology
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    • v.16 no.10
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    • pp.1346-1354
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    • 2002
  • The purpose of this work is to study the effects of specularly reflecting wall under the combined radiative and laminar free convective heat transfer in an infinite square duct. An absorbing and emitting gray medium is enclosed by the opaque and diffusely emitting walls. The walls may reflect diffusely or specularly. Boussinesq approximation is used for the buoyancy term. The radiative heat transfer is evaluated using the direct discrete ordinates method. The parameters under considerations are Rayleigh number, conduction to radiation parameter, optical thickness, wall emissivity and reflection mode. The differences caused by the reflection mode on the stream line, and temperature distribution and wall heat fluxes are studied. Some differences are observed for the categories mentioned above if the order of the conduction to radiation parameter is less than order of 10$\^$-3/ fer the range of Rayleigh number studied. The differences at the side wall heat flux distributions are observed as long as the medium is optically thin. As the top wall emissivity decreases, the differences between these two modes are increased. As the optical thickness decreases at the fixed wall emissivity, the differences also increase. The difference of the streamlines or the temperature contours is not as distinct as the side wall heat flux distributions. The specular reflection may alter the fluid motion.

Flow-induced Instability of Multi-wall Carbon Nanotubes for Various Boundary Conditions (경계조건에 따른 다중벽 탄소나노튜브의 유체유발 불안정성 변화)

  • Yun, Kyung-Jae;Song, Oh-Seop
    • Transactions of the Korean Society for Noise and Vibration Engineering
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    • v.20 no.9
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    • pp.805-815
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    • 2010
  • This paper studies the influence of internal moving fluid and flow-induced structural instability of multi-wall carbon nanotubes conveying fluid. Detailed results are demonstrated for the variation of natural frequencies with flow velocity, and the flow-induced divergence and flutter instability characteristics of multi-wall carbon nanotubes conveying fluid and modelled as a thin-walled beam are investigated. Effects of various boundary conditions, Van der Waals forces, and non-classical transverse shear and rotary inertia are incorporated in this study. The governing equations and three different boundary conditions are derived through Hamilton's principle. Numerical analysis is performed by using extended Galerkin's method which enables us to obtain more exact solutions compared with conventional Galerkin's method. This paper also presents the comparison between the characteristics of single-wall and multi-wall carbon nanotubes considering the effect of van der Waals forces. Variations of critical flow velocity for different boundary conditions of two-wall carbon nanotubes are investigated and pertinent conclusion is outlined.

Growth and Optical Conductivity Properties for BaAl2Se4 Single Crystal Thin Film by Hot Wall Epitaxy (Hot Wall Epitaxy(HWE)법에 의한 BaAl2Se4 단결정 박막 성장과 광전도 특성)

  • Jeong, Junwoo;Lee, Kijung;Hong, Kwangjoon
    • Journal of Sensor Science and Technology
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    • v.24 no.6
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    • pp.404-411
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    • 2015
  • A stoichiometric mixture of evaporating materials for $BaAl_2Se_4$ single crystal thin films was prepared from horizontal electric furnace. To obtain the single crystal thin films, $BaAl_2Se_4$ mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the Hot Wall Epitaxy (HWE) system. The source and substrate temperatures were $610^{\circ}C$ and $410^{\circ}C$, respectively. The crystalline structure of the single crystal thin films was investigated by the photoluminescence and double crystal X-ray diffraction (DCXD). The carrier density and mobility of $BaAl_2Se_4$ single crystal thin films measured from Hall effect by van der Pauw method are $8.29{\times}10^{-16}cm^{-3}$ and $278cm^2/vs$ at 293 K, respectively. The temperature dependence of the energy band gap of the $BaAl_2Se_4$ obtained from the absorption spectra was well described by the Varshni's relation, $E_g(T)=3.4205eV-(4.3112{\times}10^{-4}eV/K)T^2/(T+232 K)$. The crystal field and the spin-orbit splitting energies for the valence band of the $BaAl_2Se_4$ have been estimated to be 249.4 meV and 263.4 meV, respectively, by means of the photocurrent spectra and the Hopfield quasicubic model. These results indicate that the splitting of the ${\Delta}so$ definitely exists in the ${\Gamma}_5$ states of the valence band of the $BaAl_2Se_4/GaAs$ epilayer. The three photocurrent peaks observed at 10 K are ascribed to the $A_1$-, $B_1$-exciton for n =1 and $C_{31}$-exciton peaks for n=31.

Experiments on the Performance of a Thin-Plate Damper Attached to a Coupling Beam (연결보에 부착된 박판형 금속 감쇠기의 성능실험)

  • Lee, Young-Wook;Chae, Ji-Yong;Park, Tae-Jun
    • Journal of the Earthquake Engineering Society of Korea
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    • v.16 no.2
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    • pp.25-33
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    • 2012
  • To examine the performance of a thin plate damper attached to coupling beam of bearing wall system, 5 specimens were designed with the variable parameters of the thickness and length of a thin steel plate, which was constructed and tested with a lateral load with up to a 5% drift ratio. The result was that the total amount of the energy dissipation of the specimen with the thin plate damper was greater than that of the standard RC specimen, and the plate buckling and plastic deformation could be seen in steel plate. The shorter the length of the damper, the higher was the lateral resistant force, but there was no apparent increase in the energy dissipation. By comparison of the experiments with the elastic buckling analysis, it was shown that the buckling force from the analysis could properly estimate the maximum value of the linear elastic range.

Photocurrent Study on the Splitting of the Valence Band and Growth of $CdIn_2S_4$/GaAs Single Crystal Thin Film by Hot Wall Epitaxy (Hot Wall Epitaxy(HWE)법에 의해 성장된 $CdIn_2S_4$ 단결정 박막의 가전자대 갈라짐에 대한 광전류 연구)

  • Baek, Seung-Nam;Hong, Kwang-Joon
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2006.11a
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    • pp.79-80
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    • 2006
  • A stoichiometric mixture of evaporating materials for $CdIn_2S_4$ single crystal thin films was prepared from horizontal electric furnace. To obtain the single crystal thin films, $CdIn_2S_4$ mixed crystal was deposited on thoroughly etched semi-Insulating GaAs(100) substrate by the Hot Wall Epitaxy (HWE) system. The temperature dependence of the energy band gap of the $CdIn_2S_4$ obtained from the absorption spectra was well described by the Varshni's relation. $E_g(T)=2.7116 eV-(7.74{\times}10^{-4} eV)T^2/(T+434)$. The crystal field and the spin-orbit splitting energies for the valence band of the $CdIn_2S_4$ have been estimated to be 0.1291 eV and 0.0248 eV, respectively, by means of the photocurrent spectra and the Hopfield quasicubic model. These results indicate that the splitting of the ${\Delta}so$ definitely exists in the ${\Gamma}_5$ states of the valence band of the $AgInS_2$/GaAs epilayer. The three photocurrent peaks observed at 10K are ascribed to the $A_1-$, $B_1-$, and C1-exciton peaks for n = 1.

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Growth and photocurrent study on the splitting of the valence band for ZnIn2S4 single crystal thin film by hot wall epitaxy (Hot Wall Epitaxy (HWE)법에 의한 ZnIn2S4 단결정 박막 성장과 가전자대 갈라짐에 대한 광전류 연구)

  • Hong, Kwang-Joon
    • Journal of Sensor Science and Technology
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    • v.16 no.6
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    • pp.419-427
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    • 2007
  • Single crystal $ZnIn_{2}S_{4}$ layers were grown on a thoroughly etched semi-insulating GaAs(100) substrate at $450^{\circ}C$ with the hot wall epitaxy (HWE) system by evaporating the polycrystal source of $ZnIn_{2}S_{4}$ at $610^{\circ}C$ prepared from horizontal electric furnace. The crystalline structure of the single crystal thin films was investigated by the photoluminescence and double crystal X-ray diffraction (DCXD). The carrier density and mobility of single crystal $ZnIn_{2}S_{4}$ thin films measured with Hall effect by van der Pauw method are $8.51{\times}10^{17}\;electron/cm^{-3}$, $291{\;}cm^{2}/v-s$ at 293 K, respectively. The photocurrent and the absorption spectra of $ZnIn_{2}S_{4}$/SI(Semi-Insulated) GaAs(100) are measured ranging from 293 K to 10 K. The temperature dependence of the energy band gap of the $ZnIn_{2}S_{4}$ obtained from the absorption spectra was well described by the Varshni's relation, $E_g(T)$=2.9514 eV. ($7.24{\times}10^{-4}\;eV/K$)$T^{2}$/(T+489 K). Using the photocurrent spectra and the Hopfield quasicubic model, the crystal field energy(${\Delta}cr$) and the spin-orbit splitting energy(${\Delta}so$) for the valence band of the $ZnIn_{2}S_{4}$ have been estimated to be 167.8 meV and 14.8 meV at 10 K, respectively. The three photocurrent peaks observed at 10 K are ascribed to the $A_{1}$-, $B_{1}$-, and $C_{41}$-exciton peaks.

Study on the Heat Flux Using Instantaneous Temperature as Height of Probe in the Combustion Chamber (연손실 순간온도 측저에 있어서 돌출높이에 따른 실험적 연구)

  • 이치우;김지훈;김시범
    • Journal of Advanced Marine Engineering and Technology
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    • v.25 no.2
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    • pp.395-402
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    • 2001
  • The gasoline engine tends to high performance, fuel economy, small-sized. Therefore, it is necessary to solve the problems on thermal load, abnormal combustion, etc, in the engine, Thine film instantaneous temperature measurement probe was made. And the manufactural method of probe was established. The instantaneous surface temperatures in the constant volume combustion chamber were measured by this probe and the heat flux was obtained by Fourier analysis. The authors measured the wall temperature of combustion chamber and computed the heat flux through the cylinder wall in order to understand the combustion characteristics depending on height of probe. For achieving this goal, the thin film instantaneous temperature probe was developed for analyzing the instantaneous surface wall temperature and unsteady heat flux on the constant volume combustion chamber.

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Use of the Sundt Clip Graft in a Previously Coiled Internal Carotid Artery Blister-Like Aneurysm

  • Cho, Jae Ik;Cho, Jae Hoon
    • Journal of Korean Neurosurgical Society
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    • v.56 no.6
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    • pp.496-499
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    • 2014
  • Owing to the focal wall defect covered with thin fibrous tissues, an aneurysm arising from the dorsal wall of the internal carotid artery (ICA) is difficult to manage either surgically or endovascularly and is often associated with high morbidity and mortality. Unfortunately, the definitive treatment modality of such highly risky aneurysm has not yet been demonstrated. Upon encountering the complex intracranial pathophysiology of such a highly precarious aneurysm, a neurosurgeon would be faced with a challenge to decide on an optimal approach. This is a case of multiple paraclinoid aneurysms including the ICA dorsal wall aneurysm, presented with spontaneous subarachnoid hemorrhage. With respect to treatment, direct clipping with a Sundt graft clip was performed after multiple endovascular interventions had failed. This surgical approach can be a treatment modality for a blood blister-like aneurysm after failed endovascular intervention(s).