• Current Optics and Photonics
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• 제8권4호
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• pp.416-420
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• 2024

A high-power Yb:YAG thin-disc laser with radial or azimuthal polarization incorporating an intracavity S-waveplate is reported. Depending on the rotational angle of the S-waveplate placed in the cavity, a Yb:YAG thin-disc laser yields 10.8 W and 10.2 W of continuous-wave outputs with radial and azimuthal polarization for an incident pump power of 131 W, corresponding to slope efficiencies of 22.9% and 23.7%, respectively. The output characteristics for each polarization state were investigated in detail by analyzing the insertion loss and the mode overlap efficiency due to the S-waveplate. Further prospects for power scaling will be discussed.

• 한국소음진동공학회:학술대회논문집
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• 한국소음진동공학회 2004년도 춘계학술대회논문집
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• pp.346-350
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• 2004

In Blu-ray(BD) optical system, as a short laser wavelength of laser diode and thin cover layer thickness of' disc, the proper adjustment of spherical aberration should be performed. Considering thin cover layer' thickness and tolerance variation of disc in BD optical system, spherical aberration in BD format is mort: serious than CDㆍDVD format Especially, in dual-layer disc, to compensate the aberration at each layer, optical component should be moved finely in the way of optical path. In this study, 1 -axis moving actuator was introduced as the method of compensating the spherical aberration, and the mechanism of the system was described. Finally, its effect on optical system will be mentioned.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2004년도 추계학술대회 논문집 Vol.17
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• pp.203-206
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• 2004

For the realization of PRAM, $Ge_2Sb_2Te_5$ (GST) has been employed for the phase transition between the crystal and amorphous states by electrical joule heating. Although there has been a vast amount of results concerning the GST in material aspect for the laser-induced optical storage disc applications, the process-related issues of GST for the PRAM applications have not been reported. In this work, the etching behaviors of GST were investigated when the processing conditions were varied in the high-density helicon plasma. The etching parameters of RF main power, RF bias power, and chamber pressure were fixed at 600 W, 150 W, and 5 mTorr, respectively. For the etching processes, gas mixtures of $Ar/Cl_2$, $Ar/CF_4$, and $Ar/CHF_3$ were employed, in which the etching rates and etching selectivities of GST thin film in given gas mixtures were evaluated. From obtained results, it is found that we can arbitrarily design the etching process according to given cell structures and material combinations for PRAM cell fabrications.