• 한국신재생에너지학회:학술대회논문집
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• 한국신재생에너지학회 2010년도 춘계학술대회 초록집
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• pp.98.2-98.2
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• 2010

$CuInS_2$ thin films were synthesized by sulfurization of Cu/In Stacked elemental layer deposited onto glass Substrates by vacuum furnace annealing at temperature 200[$^{\circ}C$]. And structural and electrical properties were measured in order to certify optimum conditions for growth of the ternary compound semiconductor $CuInS_2$ thin films with non-stoichiometry composition. $CuInS_2$ thin film was well made at the heat treatment 200[$^{\circ}C$] of SLG/Cu/In/S stacked elemental layer which was prepared by thermal evaporator, and chemical composition of the thin film was analyzed nearly as the proportion of 1 : 1 : 2. Physical properties of the thin film were investigated at various fabrication conditions substrate temperature, annealing and temperature, annealing time by XRD, FE-SEM and hall measurement system. At the same time, carrier concentration, hall mobility and resistivity of the thin films was $9.10568{\times}10^{17}$ [$cm^{-3}$], 312.502 [$cm^2/V{\cdot}s$] and $2.36{\times}10^{-2}$ [${\Omega}{\cdot}cm$], respectively.

• Journal of the Korean Vacuum Society
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• 제10권4호
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• pp.396-402
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• 2001

MgO thin films with 1000 $\AA$ thickness were deposited on Cu substrates by using an electron gun evaporator at room temperature. A 1000 $\AA$ thick Al layer was deposited on the MgO for removing the charging effect of the MgO thin film during the measurements of the sputtering yields. A Ga ion liquid metal was used as the focused ion beam(FIB) source. The ion beam was focused by using double einzel lenses, and a deflector was employed to scan the ion beams into the MgO layer. Both currents of the secondary particle and the probe ion beam were measured, and they dramatically changed with varying the applied acceleration voltage of the source. The sputtering yield of the MgO layer was determined using the values of the analyzed probe current, the secondary particle current, and the net current. When the acceleration voltage of the FIB system was 15 kV, the sputtering yield of the MgO thin film was 0.30. The sputtering yield of the MgO thin film linearly increases with the acceleration voltage. These results indicate that the FIB system is promising for the measurements of the sputtering yield of the MgO thin film.

• Current Photovoltaic Research
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• 제5권1호
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• pp.20-24
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• 2017

Recently, three-dimensional (3D) light harvesting structures are highly attracted because of their high light harvesting capacity and charge collection efficiencies. In this study, we have fabricated $Cu_2ZnSn(S_xSe_{1-x})_4$ based 3D thin film solar cells on PR patterned Molybdenum (Mo) substrates using photolithography technique. Specifically, Mo patterns were deposited on PR patterned Mo substrates by sputtering and the thin Cu-Zn-Sn stacked layer was deposited over this Mo patterns by sputtering technique. The stacked Zn-Sn-Cu precursor thin films were sulfo-selenized to form CZTSSe pattern. Finally, CZTSSe absorbers were coated with thin CdS layer using chemical bath deposition and ZnO window layer was deposited over CZTSSe/CdS using DC sputtering technique. Fabricated 3-D solar cells were characterized by X-ray diffraction (XRD), X-ray fluorescence (XRF) analysis, Field-emission scanning electron microscopy (FE-SEM) to study their structural, compositional and morphological properties, respectively. The 3% efficiency is achieved for this kind of solar cell. Further efforts will be carried out to improve the performance of solar cell through various optimizations.

• Analytical Science and Technology
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• 제6권2호
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• pp.239-246
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• 1993

The structure of $(BaSr)TiO_3$ thin film deposited on ITO coated glass, bare glass and (100) Si substrates was not changed, but the crystallinity was improved by the polycrystalline ITO layer and (100) Si substrate. The composition of $(BaSr)TiO_3$ thin film deposited on ITO coated glass was nearly stoichiometric ((Ba+Sr)/Ti=1.08~1.09) and very uniform through all deposition process. But as the deposition temperature increases, the interdiffusion between grown thin film and ITO layer and between ITO layer and base glass is severer. $(BaSr)TiO_3$ thin film deposited on ITO coated glass substrate was highly transparent. The refractive index($n_f$) of $(BaSr)TiO_3$ thin film deposited on ITO coated glass was 2.138~2.286 as a function of substrate temperature.

• Transactions of the Korean hydrogen and new energy society
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• 제17권2호
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• pp.204-211
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• 2006

The electrolyte in the solid oxide fuel cell must be dense enough to avoid gas leakage and thin enough to reduce the ohmic resistance. In order to manufacture the thin and dense electrolyte layer, 8 mol% $Y_2O_3$ stabilized-$ZrO_2$ (8YSZ) electrolyte layers were coated on the porous tubular substrate by the novel vacuum slurry dip-coating process. The effects of the slurry concentration, presintering temperature, and vacuum pressure on the thickness and the gas permeability of the coated electrolyte layers have been examined in the vacuum slurry coating process. The vacuum-coated electrolyte layers showed very low gas permeabilities and had thin thicknesses. The single cell with the vacuum-coated electrolyte layer indicated a good performance of $495\;mW/cm^2$, 0.7 V at $700^{\circ}C$. The experimental results show that the vacuum dip-coating process is an effective method to fabricate dense thin film on the porous tubular substrate.

• Journal of the Microelectronics and Packaging Society
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• 제23권3호
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• pp.31-35
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• 2016

This paper demonstrates the successful application of yttria-stabilized zirconia thin films deposited by atomic layer deposition to the anode-side interlayer for cerium oxide electrolyte based solid oxide fuel cell. At the operating temperature over $500^{\circ}C$, the electrical conductivity of cerium oxide electrolyte is known to dramatically increase and, therefore, the open circuit voltage of the cell decreases leading to the decrease of the performance. Ultra-thin (60 nm) atomic layer deposited yttria-stabilized zirconia thin film in this study conformally coated the anode-side surface of the cerium oxide electrolyte and efficiently blocked the electrical conduction through the electrolyte. Accordingly, the open circuit voltage increased by up to 20%, and the maximum power density increased by 52% at $500^{\circ}C$

• Proceedings of the Korean Vacuum Society Conference
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• 한국진공학회 2011년도 제40회 동계학술대회 초록집
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• pp.204-205
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• 2011

In thin film silicon solar cells, p-i-n structure is adopted instead of p/n junction structure as in wafer-based Si solar cells. PECVD is a most widely used thin film deposition process for a-Si:H or ${\mu}c$-Si:H solar cells. For best performance of thin film silicon solar cell, the dopant profiles at p/i and i/n interfaces need to be as sharp as possible. The sharpness of dopant profiles can easily achieved when using multi-chamber PECVD equipment, in which each layer is deposited in separate chamber. However, in a single-chamber PECVD system, doped and intrinsic layers are deposited in one plasma chamber, which inevitably impedes sharp dopant profiles at the interfaces due to the contamination from previous deposition process. The cross-contamination between layers is a serious drawback of a single-chamber PECVD system in spite of the advantage of lower initial investment cost for the equipment. In order to resolve the cross-contamination problem in single-chamber PECVD systems, flushing method of the chamber with NH3 gas or water vapor after doped layer deposition process has been used. In this study, a new plasma process to solve the cross-contamination problem in a single-chamber PECVD system was suggested. A single-chamber VHF-PECVD system was used for superstrate type p-i-n a-Si:H solar cell manufacturing on Asahi-type U FTO glass. A 80 MHz and 20 watts of pulsed RF power was applied to the parallel plate RF cathode at the frequency of 10 kHz and 80% duty ratio. A mixture gas of Ar, H2 and SiH4 was used for i-layer deposition and the deposition pressure was 0.4 Torr. For p and n layer deposition, B2H6 and PH3 was used as doping gas, respectively. The deposition temperature was $250^{\circ}C$ and the total p-i-n layer thickness was about $3500{\AA}$. In order to remove the deposited B inside of the vacuum chamber during p-layer deposition, a high pulsed RF power of about 80 W was applied right after p-layer deposition without SiH4 gas, which is followed by i-layer and n-layer deposition. Finally, Ag was deposited as top electrode. The best initial solar cell efficiency of 9.5 % for test cell area of 0.2 $cm^2$ could be achieved by applying the in-situ plasma cleaning method. The dependence on RF power and treatment time was investigated along with the SIMS analysis of the p-i interface for boron profiles.

• Proceedings of the Materials Research Society of Korea Conference
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• 한국재료학회 2002년도 춘계 학술발표강연 및 논문개요집
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• pp.65-65
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• 2002

• Proceedings of the Korean Society of Precision Engineering Conference
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• 한국정밀공학회 2010년도 춘계학술대회 논문집
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• pp.725-726
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• 2010

• Proceedings of the Materials Research Society of Korea Conference
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• 한국재료학회 2007년도 추계학술발표대회 및
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• pp.18.2-18.2
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• 2007