• 대한전기학회:학술대회논문집
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• 대한전기학회 1999년도 하계학술대회 논문집 D
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• pp.1989-1991
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• 1999

This paper presents characteristics of CrN thin-film strain gauges, which were deposited on glass by DC reactive magnetron sputtering in an argon-nitrogen atmosphere(Ar-$(5{\sim}25%)N_2$). The physical and electrical characteristics of these films investigated with the thickness range $3500{\AA}$ of CrN thin films, annealing temperature $(100{\sim}300^{\circ}C)$ and annealing $(24{\sim}72hr)$. The optimized condition of CrN thin-film strain gauges were thickness range of $3500{\AA}$ and annealing condition($300^{\circ}C$, 48 hr) in Ar-10 %$N_2$ deposition atmosphere. Under optimum conditions, the CrN thin-films for strain gauge is obtained a high resistivity, ${\rho}=1147.65{\mu}{\Omega}cm$, a low temperature coefficient of resistance, TCR=$-186ppm/^{\circ}C$ and a high temporal stability with a good longitudinal, 11.17. And change in resistance after annealing for the CrN thin-films were quitely linear and stable.

• 센서학회지
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• 제12권5호
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• pp.199-204
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• 2003

본 논문에서는 Ta-N 스트레인게이지를 이용한 극한 환경용 세라믹 박막형 압력센서의 제작 및 특성에 관하여 연구하였다. 압력감지부로 Ta-N 스트레인게이지를 사용하였으며, SDB(Si-wafer Direct Bonding)와 전기화학적 식각정지법을 이용하여 매몰 cavity를 가지는 저가격 고수율의 Si 박막 다이어프램을 제작하였다. 또한, 실리콘 박막 다이어프램상에 박막형 스트레인게이지를 형성하여 세라믹 박막형 압력센서를 제작하였다. 제작된 세라믹 박막형 압력 센서는 기존의 스트레인 게이지를 이용한 로드셀에 비해서 온도특성이 우수하고 재현성, 소형화, 집적화 및 저가격화가 가능하기 때문에 고온, 고압 등의 각한 환경에서도 사용이 가능할 것으로 기대된다.

• 한국반도체및디스플레이장비학회:학술대회논문집
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• 한국반도체및디스플레이장비학회 2002년도 추계학술대회 발표 논문집
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• pp.59-63
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• 2002

This paper reports on the fabrication process and characteristics of a ceramic thin-film pressure sensor based on Ta-N strain-gauges for harsh environment applications. The Ta-N thin-film strain-gauges are sputter-deposited on a thermally oxidized micromachined Si diaphragms with buried cavities for overpressure tolerance. The proposed device takes advantage of the good mechanical properties of single-crystalline Si as a diaphragm fabricated by SDB and electrochemical etch-stop technology, and in order to extend the temperature range, it has relatively higher resistance, stability and gauge factor of Ta-N thin-films more than other gauges. The fabricated pressure sensor presents a low temperature coefficient of resistance, high-sensitivity, low non-linearity and excellent temperature stability. The sensitivity is 1.21 ~ 1.097 mV/V.kgf/$\textrm{cm}^2$ in temperature ranges of 25~ $200^{\circ}C$ and a maximum non-linearity is 0.43 %FS.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2002년도 춘계합동학술대회 논문집
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• pp.192-196
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• 2002

This paper describes on the fabrication and characteristics of a metal thin-film pressure sensor based on Cr strain-gauges for harsh environment applications. The Cr thin-film strain-gauges are sputter-deposited onto a micromachined Si diaphragms with buried cavity for overpressure protectors. The proposed device takes advantages of the good mechanical properties of single-crystalline Si as diaphragms fabricated by SDB and electrochemical etch-stop technology, and in order to extend the operating temperature range, it incorporates relatively the high resistance, stability and gauge factor of Cr thin-films. The fabricated pressure sensor presents a low temperature coefficient of resistance, high-sensitivity, low non-linearity and excellent temperature stability. The sensitivity is 1.097~1.21 $mV/V{\cdot}kgf/cm^2$ in the temperature range of $25{\sim}200^{\circ}C$ and the maximum non-linearity is 0.43 %FS.

• 센서학회지
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• 제14권1호
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• pp.56-61
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• 2005

This paper present characteristics of chromium oxide thin-film as piezoresistive sensors, which were deposited on Si substrates by DC reactive magnetron sputtering in an argon-Oxide atmosphere for high temperature applications. The chemical composition, physical and electrical properties and thermal stability ranges of the $CrO_{x}$ sensing elements have studied. $CrO_{x}$ thin films with a linear gauge factor(GF${\fallingdotseq}$15), high electrical resistivity (${\rho}$ = $340{\mu}{\Omega}cm$) and TCR<-55 ppm/$^{\circ}C$ have been obtained. These $CrO_{x}$ thin films may allow high temperature pressure sensor miniaturization to be achieved.

• 한국전기전자재료학회논문지
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• 제14권6호
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• pp.470-474
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• 2001

This paper describes the fabrication and characteristics of CrN thin-film type pressure sensors, in which the sensing elements were deposited on SuS. 630 diaphragm by DC reactive magnetron sputtering in an argon-nitride atmosphere(Ar-(10%)N$_2$). The optimized condition of CrN thin-film sensing elements was thickness range of 3500$\AA$ and annealing condition(300$\^{C}$, 3 hr) in Ar-10%N$_2$ deposition atmosphere. Under optimum conditions, the CrN thin-films for strain gauges is obtained a high resistivity, ρ=1147.65 $\mu$Ωcm, a low temperature coefficient of resistance, TCR=186ppm/$\^{C}$ and a high temporal stability with a good longitudinal, 11.17. The output sensitivity of fabricated CrN thin-film type pressure sensors is 2.36 mV/V, 4∼20nA and the maximum non-linearity is 0.4%FS and hysteresis is less than 0.2%FS.

• 한국소음진동공학회논문집
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• 제19권9호
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• pp.915-921
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• 2009

Cellulose based electro-active paper(EAPap) is considered as a new smart material which has a potential to be used for biomimetic actuators and sensors. Beside of the natural abundance, cellulose EAPap is fascinating with its biodegradability, lightweight, high mechanical strength and low actuation voltage. When the external stress is applied to EAPap, it can generate the electrical output due to its piezoelectric property. Using piezoelectric behavior of EAPap, we studied the feasibility of EAPap as mechanical strain sensor applications and compared to commercial strain sensor. By measuring the induced output voltage from the thin piezoelectric cellulose EAPap under static and dynamic force, we propose cellulose EAPap film as a potential strain sensor material.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1999년도 하계학술대회 논문집 D
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• pp.1707-1709
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• 1999

Insulating thin films for strain gauge application, such as $SiO_2$ single layers and $SiO_2/Si_3N_4$ multilayers, are deposited by using both PECVD and RF magnetron sputtering techniques. Micro-structural analysis and electrical characterization are carried out on those films. It has been observed that PECVD films have a smoother surface and a denser micro-structure than sputter films. It should be also found out that the electrical insulation property of $SiO_2$ film can be significantly improved by adding the $Si_3N_4$ layer.

• 한국표면공학회지
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• 제35권2호
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• pp.113-121
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• 2002

We have investigated insulating properties of $SiO_2$ interlayer for the thin film strain gauge, which were prepared by RF magnetron sputtering method in various deposition conditions, such as Ar pressure, gas flow rates and sputtering gases. SEM, AFM and FT-IR techniques were used to analyze its structures and composition. As the Ar pressure and the flow rate increased, the insulating interlayer showed low insulating resistance due to its porous structure and defects. Oxygen deficiency in $SiO_2$ was decreased as fabricated by hydrogen reactive sputtering. We could enhance the surface mobility of sputtered adatoms by using Ar/$H_2$ sputtering gas and obtain a good surface roughness and insulating property. The optimum insulating resistance of 9.22 G$\Omega$ was obtained in Ar/30% $H_2$ mixed gas, flow rate 10sccm, and 1mTorr.

• 한국정밀공학회지
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• 제26권5호
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• pp.142-149
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• 2009

This paper proposes and demonstrates novel flexible contact force sensing devices for 3-dimensional force measurement. To realize the sensor, polyimide and polydimethylsiloxane are used as a substrate, which makes it flexible. Thin-film metal strain gauges, which are incorporated into the polymer, are used for measuring the three-dimensional contact forces. The force sensor characteristics are evaluated against normal and shear load. The fabricated force sensor can measure normal loads up to 4N. The sensor output signals are saturated against load over 4N. Shear loads can be detected by different voltage drops in strain gauges. The device has no fragile structures; therefore, it can be used as a ground reaction force sensor for balance control in humanoid robots. Four force sensors are assembled and placed in the four corners of the robot's sole. By increasing bump dimensions, the force sensor can measure load up to 20N. When loads are exerted on the sole, the ground reaction force can be measured by these four sensors. The measured forces can be used in the balance control of biped locomotion system.