• Proceedings of the Materials Research Society of Korea Conference
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• 2004.05a
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• pp.33-33
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• 2004

• 한국초전도학회:학술대회논문집
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• v.14
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• pp.57-57
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• 2004

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.20 no.6
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• pp.520-526
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• 2007

In order to acquire fundamental informations to fabricate high precision thin film resistors, NiCr/NiCrSi alloy films were prepared using Ni and Cr targets. Effect of composition on the electrical properties of the NiCr/NiCrSi alloy film were then investigated. Considering the effect of Si doping on the electrical and material characteristics, the lower TCR (temperature coefficient of resistance) values could be achieved for samples with Ni/Cr ratio of $0.8{\sim}1.5$ (in a range of relative higher specific resistivity and Cr composition of $40\;wt%{\sim}55\;wt%$) and with Si doping. Consequently, the sample prepared using a DC power showed a good TCR of $-25\;ppm/^{\circ}C$, which implies that increase of specific resistivity and decrease of TCR would be achieved more efficiently not for Ni-Cr binary material but for Si doped Ni-Cr ternary material, and not using RF power but using DC power in the sputtering process.

• Journal of the Microelectronics and Packaging Society
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• v.11 no.1
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• pp.37-42
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• 2004

In the electronic components and devices fabrication, thin film resistors with low TCR (temperature coefficient of resistance) and high precision have been used over 3 ㎓ microwave in recent years. Ni-Cr alloys thin films resistors is one of the most commonly used resistive materials because they have low TCR and highly stable resistance. In this work, we fabricated thin film resistors using Evanohm alloys target(72Ni-20Cr-3Al-4Mn-Si) of S-type with excellent resistors properties by RF-sputtering. Also we reported the best annealing condition of thin film resistors for microwave to observe microstructure and electronic properties of thin film according to annealing conditions($200^{\circ}C$, $300^{\circ}C$, $400^{\circ}C$, $500^{\circ}C$)

• Proceedings of the International Microelectronics And Packaging Society Conference
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• 2003.11a
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• pp.145-150
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• 2003

In the electronic components and devices fabrication, thin film resistors with low TCR(temperature coefficient of resistance) and high precision have been used over 3 GHz microwave in recent years. Ni-Cr alloys thin films resistors is one of the most commonly used resistive materials because it has low TCR and highly stable resistance. In this work, we fabricated thin film resistors using Evanohm alloys target(72Ni-20Cr-3Al-4Mn-Si) of s-type with excellent resistors properties by RF-sputtering. Also we reported best annealing conditions of thin film resistors for microwave to observe microstructure and electronic properties of thin film according to annealing conditions$(200^{\circ}C,\;300^{\circ}C,\;400^{\circ}C,\;500^{\circ}C)$.

• Proceedings of the KIEE Conference
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• 2001.07c
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• pp.1399-1401
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• 2001

We studied on structure and resistivity, temperature coefficient of resistance (TCR) of NiCr and NiCr-N thin resistor films prepared by do reactive magnetron sputtering of NiCr target. It is found that while pure NiCr films are polycrystalline, an addition of nitrogen (N2/(Ar+N2) ratios are between 10% and 70%) into the film is changed into amorphous structure and sheet resistance of films is increased. Measurement temperatures of TCR are ratios of $5^{\circ}C$ per 15min from $25^{\circ}C$ to $130^{\circ}C$. TCR for an as-deposited NiCr-N thin film is varied from positive to negative.

• Progress in Superconductivity
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• v.6 no.1
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• pp.46-51
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• 2004

We fabricated a resistive type superconducting fault current limiter (SFCL) of 3-phase $6.6 kV_{rms}$ / rating, based on YBCO thin films grown on sapphire substrates with a diameter off inch. Each element of the SFCL was designed to have the rated voltage of $600 V_{rms}$ $/35A_{rms}$. The elements produced a single phase with 8${\times}$6 components connected in series and parallel. In addition, a NiCr shunt resistor of 23 $\Omega$ was connected in parallel to each of them for simultaneous quenches between the elements. Prior to investigating the performance of the 3 phase SFCL, we examined the quench characteristics for 8 elements connected in series. For all elements, simultaneous quenches and equal voltage distribution within 10% deviation from the average were obtained. Based on these results, performance of the SFCL for single line-to-ground faults was investigated. The SFCL successfully limited the fault current of $10 kA_{ rms}$ below 816 $A_{peak}$ within 0.12 msec right after the fault occurred. During the quench process, average temperature of all components did not exceed 250 K, and the SFCL was totally safe during the whole operation.

• Journal of the Korean Vacuum Society
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• v.1 no.1
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• pp.212-222
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• 1992

To use polycrystalline Si Thin Film Transistor (poly-Si TFT) in high density SRAM instead of High Load Resistor (HLR), TFT is needed to show good electrical characteristics such as large carrier mobility, low leakage current, high driver current and low subthreshold swing. To satisfy these electrical characteristics, the trap state density must be reduced in the channel poly. Technological issues pertinent to the channel poly fabrication process are investigated and discussed. They are solid phase growth (SPG), Si-ion implantation, laser annealing and hydrogenation. The electrical properties of several CVD oxides used as the gate oxide of TFT are compared. The dependence of the electrical characteristics of TFT on source-drain ion-implantation dose, drain offset length and dopant lateral diffusion are also described.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.11a
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• pp.411-415
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• 2002

Precision resistors were prepared by controlling the concentration of Ni and Cr deposited on cylindrical alumina substrates (diameter: 1.7mm, length: 5.5mm). Deposited films were analyzed with FESEM, AES, and AFM. As the amount of Cr in the film increases, the TCR was shifted to negative direction.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.19-19
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• 2009

TiNxOy/TiNx multilayer thin films with a high resistance (~ k$Omega$) were deposited on SiO2/Si substrates at room temperature by sputtering. The TiNx thin films show island and smooth surface morphology in samples prepared by dc and rf magnetron sputtering, respectively. TiNxOy/TiNx multilayer has been developed to control temperature coefficient of resistance (TCR) by the incorporation of TiNx layer (positive TCR) inserted into TiNxOy layers(negative TCR). Electrical and structural properties of sputtered TiNxOy/TiNx multilayer films were investigated as a function of annealing temperature. In order to achieve a stable high resistivity, multilayer films were annealed at various temperatures in oxygen ambient. Samples annealed at 700 oC for 1 min exhibit a good TCR value and a stable high resistivity.