• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2007년도 추계학술대회 논문집
• /
• pp.371-371
• /
• 2007

In this study, liquid crystal (LC) aligning capabilities for vertical alignment on the $CeO_x$ thin film by thermal evaporation method were investigated. Also, the control of pretilt angles and thermal stabilities of the NLC treated on $CeO_x$ thin film were investgated. The uniform LC alignment on the $CeO_x$ thin film surfaces and good thermal stabilities with thermal evaporation can be achieved. It is considerated that the LC alignment on the $CeO_x$ thin film by thermal evaporation is attributed to elastic interaction between LC molecules and micro-grooves at the $CeO_x$ thin film surface created by evaporation. In addition, it can be achieved the good electro-optical (EO) properties of the VA-LCD on $CeO_x$ thin film layer with oblique thermal evaporation.

• 설비공학논문집
• /
• 제10권6호
• /
• pp.674-682
• /
• 1998

In this study, thin film evaporation of water on low-fin tubes were experimentally investigated. Five low-fin tubes with different fin spacing and fin height were tested. Test range covered 0.146kg/ms $\leq$$\Gamma$$\leq$0.219kg/ms and 10㎾/$\m^2$$\leq$q $\leq$70㎾/$\m^2$. Saturation temperature was loot. Compared with the plain tube, low fin tubes enhanced the water film evaporation from 60% to 100%. Tubes with fin spacing smaller than 2mm and fin height higher than 1mm performed better than tubes with other fin configuration. However, when fin spacing was too small at high film flow or fin height was too high at low film flow, the performance decreased. The heat transfer coefficient slightly increased as the flow rate increased. Correlations are developed based on present data.

• 한국정보디스플레이학회:학술대회논문집
• /
• 한국정보디스플레이학회 2009년도 9th International Meeting on Information Display
• /
• pp.1564-1567
• /
• 2009

Cu(In,Ga)$Se_2$ (CIGS) thin films were formed using CIGS bulk by electron-beam evaporation method with an evaporation current from 20 mA to 90 mA. The experimental results showed that the chemical compositions and the properties of CIGS films varied with the different evaporation current. The Cu-rich CIGS film was deposited successfully with a band gap of 1.20 eV when the evaporation current was 90 mA.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2003년도 추계학술대회 논문집 Vol.16
• /
• pp.571-574
• /
• 2003

The thin films fabricated by using the layer-by-layer sputtering was compared with the thin film fabricated by using the evaporation method. Re-evaporation in the form of Bi atoms or $Bi_2O_3$ molecules easily bring out the deficiency of Bi atoms in thin film due to the long sputtering time of the layer-by-layer deposition. On the other hand, the respective atom numbers corresponding to BiSrCaCuO phase is concurrently supplied on the film surface in the evaporation deposition process and leads to BiSrCaCuO phase formation. Also, it is cofirmed that by optimizing the deposition condition, each single phase of the Bi2201 phase and the Bi2212 phase can be fabricated, the sticking coefficient of Bi element is clearly related to the changing of substrate temperature and the formation of the Bi2212 phase.

• 대한전자공학회논문지
• /
• 제24권6호
• /
• pp.980-985
• /
• 1987

The thin metal films of Cr, Al, Mn and were made in various evaporation rates with 100\ulcornerthickness under 2x10**-9 bar vacuum level. We analized and discussed the relationships between changes of structure, morphology and sheet resistance, light transmittance for the corresponding evaporation rates. As the evaporation rates were decreased at higher rates, grain sizes of all film were decreased, however both of the sheet resistance and light transmittance were increased. At lower evaporation rate, films of Cr and Cu porduced non-stoi-chiometric oxides but Al an Mn showed up amorphous structures.

• 반도체디스플레이기술학회지
• /
• 제2권4호
• /
• pp.31-35
• /
• 2003

We present a formation technique of thin film heater for heat transfer components. Thin film structures of Cr-Si have been prepared on top of alumina substrates by magnetron sputtering. More samples of Mo thin films were prepared on silicon oxide and silicon nitride substrates by electron beam evaporation technology. The electrical properties of the thin film structures were measured up to the temperature of $500^{\circ}C$. The thickness of the thin films was ranged to about 1 um, and a post annealing up to $900^{\circ}C$ was carried out to achieve more reliable film structures. In measurements of temperature coefficient of resistance (TCR), chrome-rich films show the metallic properties; whereas silicon-rich films do the semiconductor properties. Optimal composition between Cr and Si was obtained as 1 : 2, and there is 20% change or less of surface resistance from room temperature to $500^{\circ}C$. Scanning electron microscopy (SEM) and Auger electron spectroscopy (AES) were used for the material analysis of the thin films.

• 한국진공학회:학술대회논문집
• /
• 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
• /
• pp.166.2-166.2
• /
• 2014

In this work, we demonstrated a facile and effective method for deposition of metal tetraphenylporphyrin (MTPP) thin film by a combined a thermal evaporation (TE) and atomic layer deposition (ALD). For the deposition of Zn-TPP thin film, Tetraphenylporphyrin (TPP) and diethyl zinc (DEZ) were used as organic and inorganic materials, respectively. Optimum conditions for the deposition of Zn-TPP thin film were established systematically: (1) the exposure time of DEZ as inorganic precursor and (2) the substrate temperature were adjusted, respectively. As a result, we verified that the surface reaction between organic semiconductor (TPP) and metal atom (Zn) was ALD process. In addition, we calculated activation energy by using Arrhenius equation for the substrate temperature versus area change rate of pyrrolic nitrogen. The surface and interface reactions between TPP with Zn were investigated by X-ray photoelectron spectroscopy, Raman spectroscopy, UV-vis spectroscopy, and scanning electron microscopy. These results show a facile and well-controllable fabrication technique for the metal-organic thin film for future electronic applications.

• 한국정보통신학회:학술대회논문집
• /
• 한국해양정보통신학회 2007년도 춘계종합학술대회
• /
• pp.517-520
• /
• 2007

The BSCCO thin film fabricated by using the layer by layer deposition method was compared with the BSCCO thin film fabricated by using the evaporation method. Reevaporation in the form of Bi atoms or $Bi_2O_3$molecules easily bring out the deficiency of Bi atoms in thin film due to the long sputtering time of the layer by layer deposition. On the other hand, the respective atom numbers corresponding to BSCCO phase is concurrently supplied on the film surface in the evaporation deposition process and leads to BSCCO phase formation. Also, it is cofirmed that by optimizing the deposition condition, each single phase of the Bi2201 phase and the Bi2212 phase can be fabricated, the sticking coefficient of Bi element is clearly related to the changing of substrate temperature and the formation of the Bi2212 phase.

• 한국정밀공학회지
• /
• 제16권3호통권96호
• /
• pp.62-71
• /
• 1999

Integrating micro-machined sensors and actuators on the conventional devices with the copper power lines was incompatible to fabricate the mass produced micro electromechanical system (MEMS) devices. To achieve the compatibility of the wiring method between MEMS parts and devices, we developed the three-dimensional sputter-evaporation system that coats micropatterned thin copper films on the surface of the MEMS element. The system consists of a process chamber, two branch chambers, the substrate holder, and a linear-rotary motion feedthrough. Thin copper film was sputtered and evaporated on the biocompatible polymer, Pellethane$^{circed{R}}$ and silicone, catheter that is 2 mm in diameter and 700 mm in length. The metal film coating technique with three-dimensional thin film sputter-evaporation system was developed to apply the power and signal lines on the micro active endoscope. In this paper, we developed the three-dimensional metal film sputter-evaporation system operated on the low temperature for the biopolymeric substrates used in the medical MEMS devices.

• JSTS:Journal of Semiconductor Technology and Science
• /
• 제5권3호
• /
• pp.182-186
• /
• 2005

In this work, thermal evaporation system was employed to deposit thin films of SiC on glass substrates in order to determine the parameters of them. Measurements included transmission, absorption, Seebak effect, resistivity and conductivity, absorption coefficient, type of energy band-gap, extinction coefficient as functions of photon energy and the effect of increasing film thickness on transmittance. Results explained that SiC thin film is an n-type semiconductor of indirect energy band-gap of ${\sim}3eV$, cut-off wavelength of 448nm, absorption coefficient of $3.4395{\times}10^{4}cm^{-1}$ and extinction coefficient of 0.154. The experimental measured values are in good agreement with the typical values of SiC thin films prepared by other advanced deposition techniques.