• Transactions on Electrical and Electronic Materials
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• 제6권2호
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• pp.57-62
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• 2005

Using intense pulsed ion beam evaporation technique, we have succeeded in the preparation of poly crystalline silicon thin films without impurities on silicon substrate. Good crystallinity and high deposition rate have been achieved without heating the substrate by using lEE. The crystallinity of poly-Si film has been improved with the high density of the ablation plasma. The intense diffraction peaks of poly-Si thin films could be obtained by using the substrate bias system. The crystallinity and the deposition rate of poly-Si thin films were increased by applying (-) bias voltage for the substrate.

• 마이크로전자및패키징학회지
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• 제6권1호
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• pp.31-37
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• 1999

본 연구에서는 집적회로의 배선공정에 적용될 무전해도금된 Cu박막의 열적 특성과 접착특성에 대하여 고찰하였다. 시편은 Si 기판에 MOCVD법으로 TaN 확산방지막을 증착시킨 후 그 위에 무전해도금법으로 Cu 막을 증착시켜 Cu/TaN/Si 구조의 다층박막을 제조하였다. 이렇게 제조된 Cu/TaN/Si 시편을 수소와 Ar 분위기에서 각각 열처리시킨 후 열처리온도에 따른 비저항을 측정함으로써 Cu박막의 열적 안정성을 분석하였다. Cu박막과 TaN확산방지막과의 접착특성을 분석하기 위하여 scratch test를 사용하였으며, TaN 확산방지막에 대한 무전해도금된 Cu배선막의 접착력은 일반적인 Thermal evaporation과 Sputturing 방법으로 증착된 Cu 박막의 경우와 비교함으로써 평가되었다. TaN 박막에 대한 Cu박막의 접착성을 평가하기 위해 scratch test를 행한 결과 무전해도금된 Cu박막의 경우 다른 방법으로 증착된 Cu 박막과 비슷한 접착특성을 나타내었으며, acoustic emission분석과 microscope 관찰 결과 sputtering이나 evaporation 방법으로 증착된 Cu박막 보다 무전해도금된 Cu박막이 상대 적으로 우수한 접착력을 나타내었다.

• 한국재료학회:학술대회논문집
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• 한국재료학회 2010년도 춘계학술발표대회
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• pp.36.2-36.2
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• 2010

A small amount of Na incorporated in $CuInSe_2$ (CIS) absorption layer has become widely accepted as a requirement for efficient polycrystalline CIS solar cells. However, there is ongoing argument on the role of sodium incorporated in the absorber. In this paper, CIS absorption layers have been deposited using the three-stage co-evaporation process on Mo coated non-Alkali glass substrates. The NaF was evaporated during the second-stage with various fluxes. This paper is focusing on differences of micro-structure and composition ratio of the absorber realized with different Na contents and the variation of electrical properties of the cells with the corresponding absorbers. The analytical results of x-ray diffraction (XRD) patterns, field emission scanning electron microscope (FE-SEM), energy dispersive spectroscopy (EDS) and current-voltage characteristics will be discussed to investigate the effect of NaF flux on the CIS absorber formation and its cell performance.

• 한국재료학회지
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• 제6권7호
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• pp.678-683
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• 1996

In the fabrication processes of thin film thermoelectrics, a subsequent annealing treatment is inevitable to reduce the defects and residual stresses introduced during the film growth, and to make the uniform carrier concentration of the film. However, the diffusion-induced atomic redistribution and the broadening of p/n junction region are expected to affect the thermoelectric properties of thin film modules. The present study intends to investigate the diffusion at the p/n junctions of thermoelectric thin films and to relate it to the property changes. The film junctions of p-type(Bi0.5Sb1.5Te3)and n-type(Bi2Te2.4Se0.6)were prepared by the flash evaporation method. Aluminum thin layer was employed as a diffusion barrier between p-and n-type films of the junction. This was found to be an effective barrier by showing a negligible diffusion into both type films. After annealing treatment, the thermoelectric properties of p/n couples with aluminum barrier layer were accordingly retained their properties without any deterioration.

• 한국전기전자재료학회논문지
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• 제17권4호
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• pp.432-438
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• 2004

In this study, we investigated the WVTRs Properties of inorganic thin composite films(ITCFs) to be newly adopted as the passivation layer of the OLED to replace the inorganic compound material Because we thought that inorganic compound materials were limited to enhance the barrier property of thin film. So, ITCFs were fabricated by mixing the cooperated material with the base material. And then, ITCFs were deposited onto the plastic substrate using the electron beam evaporation system and the water vapor transmission rates(WVTRs) were measured using the Mocon equipment. As a result of the WVTR measurement, we could analyze the WVTR values for various ITCFs. ITCFs had a remarkably lower value than the inorganic compound film. Through the analysis of thin film, we can understand the crystal structure and mixed amount. Therefore, ITCFs can be used as the inorganic passivation layers of OLED with the inorganic compound film.

• 한국표면공학회지
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• 제26권1호
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• pp.11-21
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• 1993

The relationship between the amount of deposited-Zn and the adhesion of Zn film has beend investigated. This study changed the mild steel substrate temperature range of $100^{\circ}C$~$250^{\circ}C$, with the aim of studying the adhesion of Zn film coated by PVD on substrates in 10-2~10-3torr and deoxidant gas atmospheres 50%H2~50%N2 and 75%H2+25%N2. The result revealed that the adhesion of Zn film was remarkably good in a 75% H2+25%N2 gas atmosphere as well as deoxidant time was short, and with increasing the substrate tempera-ture up to $250^{\circ}C$. Whiled the amount of deposition tended to increase linearly with time at constant evaporation temperature. It was almost constant when the substrate temperature was lower than $200^{\circ}C$, slightly decreased between $200^{\circ}C$ and $250^{\circ}C$ and significantly decreased at $300^{\circ}C$.

• Nuclear Engineering and Technology
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• 제54권8호
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• pp.3117-3129
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• 2022

Deeply understanding the phase change of thin liquid sodium film inside wick pore is very important for further studying high-temperature sodium heat pipe's heat transfer. For the first time, the evaporation and condensation of thin liquid sodium film are investigated by the Lennard-Jones potential of molecular dynamics. Based on the startup and normal operation of the sodium heat pipe, three different cases are simulated. First, the equilibrium is achieved and the Mass Accommodation Coefficients of the three cases are 0.3886, 0.2119, 0.2615 respectively. Secondly, the non-equilibrium is built. The change of liquid film thickness, the number of gas atoms, the net evaporation flux (J_net), the heat transfer coefficient (h) at the liquid-gas interface are acquired. Results indicate that the magnitude of the J_net and the h increase with the basic equilibrium temperature. In 520-600 K (the startup of the heat pipe), the h has approached 5-6 W m^-2 K^-1 while liquid film thickness is in 11-13 nm. The fact shows that during the initial startup of the sodium heat pipe, the thermal resistance at the liquid-gas interface can't be negligible. This work is the complement and extension for macroscopic investigation of heat transfer inside sodium heat pipe. It can provide a reference for further numerical simulation and optimal design of the sodium heat pipe in the future.

• 한국재료학회지
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• 제5권7호
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• pp.850-857
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• 1995

반응성 전자빔 증착 방법으로 여러 산소압력 하에서 VO$_x$ 및 V$_{1-x}$ Sn$_{x}$O$_2$박막을 유리 위에 코팅하였다. Thermochromism과 천이온도는 spectrophotometer를 이용하여 여러 온도에서 파장에 따른 광투과율을 측정하여 조사하였다. 화학양론비를 RBS로 조사한 결과 산소 압력이 5$\times$$10^{-5}$ Torr 일때 가장 뚜렷한 thermochromic 효과를 나타내는 완전에 가까운 화학양론비를 갖는 VO$_2$박막을 제작할 수 있었다. 그리고 박막의 결정화를 위하여 rapid thermal annealing (RTA) 방법을 적웅한 결과 공기중에서 40$0^{\circ}C$~45$0^{\circ}C$에서 20~30초간의 어닐링 하였을 때가 두께 100~300nm의 박막을 결정화시키는데 최적조건으로 발견되었다. 또한, Sn을 VO$_2$에 1%~6% 첨가한 V$_{1-x}$ Sn$_{x}$O$_2$박막의 써모크로미즘 및 천이온도를 spectrophotometer로 근적외선의 투과율을 측정하여 조사한 결과 뚜렷한 thermochromism은 그대로 유지되었고 V$_{1-x}$ Sn$_{x}$O$_2$, 박막의 천이온도는 VO$_2$박막의 천이온도 보다 높게 나타났다.

• 한국신재생에너지학회:학술대회논문집
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• 한국신재생에너지학회 2008년도 춘계학술대회 논문집
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• pp.438-440
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• 2008

Effects of Ga contents of CIGS absorber layer on the performance of thin films solar cells were investigated. As Ga content increased, the grain size of CIGS films decreased presumably because Ga diffusion during 2nd stage of co-evaporation process is more difficult than In diffusion. Performances of corresponding solar cell show systematic dependence on Ga content in which open circuit voltage increases and short circuit current and fill factor decrease as Ga contents increases. At a optimal condition of Ga/(In+Ga)=0.27, the solar cell shows a conversion efficiency of 15.6% with $V_{OC}$ of 0.625 V, $J_{SC}$ of 35.03 mA/$cm^2$ and FF of 71.3%.

• 한국표면공학회지
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• 제29권6호
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• pp.851-856
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• 1996

Copper Phthalocyanine (CuPc) thin films were fabricated on the silicon wafers by plasma activated evaporation method and structural analysis were carried out with various spectroscopies. The CuPc films had dense and smooth morphology and they also showed good mechanical properties and chemical resistance. The main molecular structure of the CuPc, which is the conjugated aromatic heterocyclic ring structure, was maintained even in the plasma process. However, metal-ligand (Cu-N) bands were deformed by the plasma process and the structure became amorphous especially at higher process pressures. Oxygen impurities were incorporated in the film and carboxyl functional groups were formed at the peripheral benzene ring. The structure and morphology of the films were dependent on the process pressure but relatively irrespective of the RF power.