• Journal of the Institute of Electronics Engineers of Korea SD
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• v.37 no.4
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• pp.7-14
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• 2000

A Bi$_{4}$Ti$_{3}$O$_{12}$ (BIT) thin film is prepared by sol-gel method using acetate precursors and evaluated whether it could be applied to NVFRAM (Non-Volatile Ferroelectric RAM). The drying and the annealing temperature are 40$0^{\circ}C$ and $650^{\circ}C$, respectively and they are determined from the DT-TG (Differential Thermal-Thermal Gravimetric) analysis. The BIT thin film deposited on Pt/Ta/SiO$_{2}$/Si substrate shows orthorhombic perovskite phase. The grain size and the surface roughness are about 100 nm and 70.2$\AA$, respectively. The dielectric constant and the loss tangent at 10 KHz are 176 and 0.038, respectively, and the leakage current density at 100 ㎸/cm is 4.71 $mutextrm{A}$/$\textrm{cm}^2$. In the results of hysteresis loops measured at $\pm$250 ㎸/cm, the remanent polarization (Pt) and the coercive field (Ec) are 5.92 $\mu$C/$\textrm{cm}^2$ and 86.3 ㎸/cm, respectively. After applying 10$^{9}$ square pulses of $\pm$5V, the remanent polarization of the BIT thin film decreases as much as about 33% from 5.92 $\mu$C/$\textrm{cm}^2$ of initial state to 3.95 $\mu$C/$\textrm{cm}^2$.

• Korean Journal of Crystallography
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• v.12 no.3
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• pp.177-181
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• 2001

We have studied superhydrophilic properties of TiO₂thin films in relation with those crystal structures due to the heat treatments. Thin films were fabricated on Si (100) wafers using a conventional Sol-Gel method. Following drying and sintering processes, TiO₂film had an anatase phase with additional heat treatment at 500℃, an rutile phase at 1000℃, and a mixture of anatase and rutile phase at 750℃. All these films got hydrophilic even without any UV illumination. Especially the sample treated at 750℃ had a superhydrophilic contact angle of 5°. We suggested that the superhydrophilic films should have a mixture of anatase and rutile phase for the best performance. The hydrophilic TiO₂films were slowly degraded into the hydrophobic state in the dark room but quickly recovered back with les than 1 hour of UV illumination.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.10 no.3
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• pp.271-277
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• 2000

Transparent $TiO_2$ thin films were prepared by the sol-gel method from titanium alkoxide aqueous solution containing large quantities of water. To prepare the aqueous system sol, the chelate compound solution were prepared from each 1 mole of titanium(IV)iso-propoxide, acetylacetone and 8 moles of isopropyl-alcohol. And then the 50 moles aqueous solution with the 0.02~0.50 moles of HCI for sol stability and the 0.3 mole of polyethylene glycol for coating adhesion were precisely dropped on the chelate compound solution. $TiO_2$thin films were fabricated by dip coating, drying and heat treatment at $400^{\circ}C$ and their characteristics were investigated by XRD, SEM and UV-visible spectrometer, The neutral sol of composition with TTIP : AcAc : IPA : $H_2O$ : PEG : HCl = 1 : 1 : 8 : 50 : 0.3 : 0.15 (molar ratio) was maintained stable sol condition and without problem for coating more than 30 days. The anatase phase $TiO_2$thin film prepared from 30 times dipping, drying and heat treating showed the flat surface and the fine microstructure of fracture surface with about 2 $\mu\textrm{m}$ thickness. Transparency of these $TiO_2$thin film was 80 % in the visible region.

• Current Photovoltaic Research
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• v.2 no.1
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• pp.36-39
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• 2014

Formation mechanism of residual carbon layer, frequently observed in the $CuInSe_2$ (CIS) thin film prepared by direct solution coating routes, was investigated in order to find a way to eliminate it. As a model system, a methanol solution with dissolved Cu and In salts, whose viscosity was adjusted by adding ethylcellulose (EC), was chosen. It was found that a double layer, a top metal ion-derived film and bottom EC-derived layer, formed during an air drying step presumably due to different solubility between metal salts and EC in methanol. Consequently, the top metal ion-derived film acts as a barrier layer inhibiting further thermal decomposition of underlying EC, resulting a formation of bottom carbon residue layer.

• Bulletin of the Korean Chemical Society
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• v.32 no.12
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• pp.4221-4226
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• 2011

Honeycomb-patterned polyvinypyrrolidone (PVP) thin films coated with nanometer-sized silver particles were prepared using honeycomb-patterned polystyrene (PS) template films fabricated by casting a polystyrene solution under humid condition. Silver was first metallized on the patterned PS films via silver nitrate ($AgNO_3$) reduction using tetrathiafulvalene (TTF) and a small amount of PVP as the reductant and dispersing agent, respectively. The effects of $AgNO_3$, TTF, and PVP solution concentrations during the reduction process in acetonitrile were determined to obtain a uniform silver-coated honeycomb-patterned PS film. Second, the silver-metallized patterned porous PS films were filled with high PVP concentration solutions via the spincoating process. Silver-coated patterned PVP films were obtained by peeling off the PVP layer from the template PS film after drying. The results show that the honeycomb-patterned PVP films uniformly coated with silver particles are conveniently obtained using the silver-coated patterned PS template, although the direct fabrication of these films using water droplets under humid conditions was not feasible because of the water solubility of PVP.

• Transactions on Electrical and Electronic Materials
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• v.11 no.5
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• pp.212-215
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• 2010

$BiFeO_3/Pb(Zr_{0.95}Ti_{0.05})O_3$ (BFO/PZT) heterolayered thin films were fabricated by the spin coating method on a Pt/Ti/$SiO_2$/Si substrate using metal alkoxide solutions. The coating and heating procedure was repeated 6 times to form the heterolayered films. The thickness of the BFO/PZT films after one cycle of drying/sintering is about 30-40 nm. All BFO/PZT films show a void free uniform grain structure without the presence of rosette structures. It can be assumed that the crystal growth of the upper BFO layers can be influenced by the lower PZT layers. As the number of coatings increased, the dielectric constant increased, so that the value for the 6-layer film was 1360 at 1 KHz.

• Journal of the Korean Ceramic Society
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• v.28 no.12
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• pp.943-952
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• 1991

Lead zirconate titanate(PZT) powders and thin films were prepared from an alkoxide-based solution by sol-gel method. Gelation of synthesized complex solutions, pyrolysis and crystallization behaviors of the dried powder were studied in accordance with a water content and a catalyst. PZT thin films were formed by spin-casting method on silicon and platinum substrates, and characterized. Ester produced from the reactions was completely removed when drying of the gel was finished. Pyrolysis property of the dried PZT gels were changed in order water content, class of catalyst, and quantity of catalyst. Crystalline Pb phase was transiently formed near 250$^{\circ}C$. Basic catalyst is good additive for a formation of perovskite phase in the films, and acidic catalyst for a densified film structure. By the analysis of RBS, Pb element in the PZT films were diffused into silicon substrate, and the pores, may be produced due to local densification around some grains in the films, make an origin of fault in microstructure when holding time goes to be longer at 700$^{\circ}C$.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.07b
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• pp.809-812
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• 2004

(Pb,Sr)TiO3 (PST) thin films were fabricated by using the alkoxide-based sol-gel method. The PST stock solution was made and then spin-coated onto a PUTi/SiO2/Si substrate. The coating and drying procedures were repeated several times, and the PST thin films were sintered at 450-650 C for 1 h. All PST thin films showed dense and homogeneous structures without the presence of any rosette structure. The thicknesses of the PST thin films were approximately 200 nm. The dielectric constant and the dielectric loss of the PST thin films sintered at 550 C were about 404 and 0.0023, respectively. The leakage current density of the PST thin film sintered at 550 C was 3.13 x 10-8 A/cm2 at 1 V.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1999.11a
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• pp.602-605
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• 1999

We dried emitting layer of EL device at 30, 80, I20 and $150^{\circ}C$ for Ihr to investigate the effects to the emission characteristics of devices. PL intensity of P3HT thin film decreased with increasing the drying temperature. But, the EL intensity and stability of device with emitting layer dried at $150^{\circ}C$ were the best. We think it s because of absence of water and remaining solvent in P3HT emitting layer. So, We suggest that the drying temperature of emitting layer of EL device should be select slightly low temperature than its glass transition temperature.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.416-416
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• 2016

Organic-inorganic metal halide perovskite solar cells have received attention because it has a number of advantages with excellent light harvesting, high carrier mobility, and facile solution processability and also recorded recently power conversion efficiency (PCEs) of over 20%. The major issue on perovskite solar cells have been reached the limit of small area laboratory scale devices produced using fabrication techniques such as spin coating and physical vapor deposition which are incompatible with low-cost and large area fabrication of perovskite solar cells using printing and coating techniques. To solution these problems, we have investigated the feasibility of achieving fully printable perovskite solar cells by the blade-coating technique. The blade-coating fabrication has been widely used to fabricate organic solar cells (OSCs) and is proven to be a simple, environment-friendly, and low-cost method for the solution-processed photovoltaic. Moreover, the film morphology control in the blade-coating method is much easier than the spray coating and roll-to-roll printing; high-quality photoactive layers with controllable thickness can be performed by using a precisely polished blade with low surface roughness and coating gap control between blade and coating substrate[1]. In order to fabricate perovskite devices with good efficiency, one of the main factors in printed electronic processing is the fabrication of thin films with controlled morphology, high surface coverage and minimum pinholes for high performance, printed thin film perovskite solar cells. Charge dissociation efficiency, charge transport and diffusion length of charge species are dependent on the crystallinity of the film [2]. We fabricated the printed perovskite solar cells with large area and flexible by the bar-coating. The morphology of printed film could be closely related with the condition of the bar-coating technique such as coating speed, concentration and amount of solution, drying condition, and suitable film thickness was also studied by using the optical analysis with SEM. Electrical performance of printed devices is gives hysteresis and efficiency distribution.