• Proceedings of the Materials Research Society of Korea Conference
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• 2010.05a
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• pp.48.1-48.1
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• 2010

Cu has been used for metallic interconnects in ULSI applications because of its lower resistivity according to the scaling down of semiconductor devices. The resistivity of Cu lines will affect the RC delay and will limit signal propagation in integrated circuits. In this study, we investigated the characteristics of electroplated Cu films according to the variation of concentration of organic additives. The plating electrolyte composed of $CuSO_4{\cdot}5H_2O$, $H_2SO_4$ and HCl, was fixed. The sheet resistance was measured with a four-point probe and the material properties were investigated with XRD (X-ray Diffraction), AFM (Atomic Force Microscope), FE-SEM (Field Emission Scanning Electron Microscope) and XPS (X-ray Photoelectron Spectroscopy). From these experimental results, we found that the organic additives play an important role in formation of Cu film with lower resistivity by EPD.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.37 no.4
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• pp.400-406
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• 2024

Next-generation wide-bandgap semiconductors such as SiC, GaN, and Ga2O3 are being considered as potential replacements for current silicon-based power devices due to their high mobility, larger size, and production of high-quality wafers at a moderate cost. In this study, we investigate the gradual modulation of chemical composition in multi-stacked metal oxide semiconductor thin films to enhance the performance and bias stability of thin-film transistors (TFTs). It demonstrates that adjusting the Ga ratio in the indium gallium oxide (IGO) semiconductor allows for precise control over the threshold voltage and enhances device stability. Moreover, employing multiple deposition techniques addresses the inherent limitations of solution-processed amorphous oxide semiconductor TFTs by mitigating porosity induced by solvent evaporation. It is anticipated that solution-processed indium gallium oxide (IGO) semiconductors, with a Ga ratio exceeding 50%, can be utilized in the production of oxide semiconductors with wide band gaps. These materials hold promise for power electronic applications necessitating high voltage and current capabilities.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.08a
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• pp.294-294
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• 2010

Over the last decade, dye-sensitized solar cell (DSSC) has attracted much attention due to the high solar-to-electricity conversion efficiency up to 10% as well as low cost compared with p-n junction photovoltaic devices. DSSC is composed of mesoporous TiO2 nanoparticle electrodes coated with photo-sensitized dye, the redox electrolyte and the metal counter electrode. The performances of DSSC are dependent on constituent materials and interface as well as device structure. Replacing the heavy glass substrate with plastic materials is crucial to enlarge DSSC applications for the competition with inorganic based thin film photovoltaic devices. One of the biggest problems with plastic substrates is their low-temperature tolerance, which makes sintering of the photoelectrode films impossible. Therefore, the most important step toward the low-temperature DSSC fabrication is how to enhance interparticle connection at the temperature lower than $150^{\circ}C$. In this talk, the key issues for high efficiency plastic solar cells will be discussed, and several strategies for the improvement of interconnection of nanoparticles and bendability will also be proposed.

• Journal of the Microelectronics and Packaging Society
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• v.20 no.4
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• pp.25-30
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• 2013

Pb-free ferroelectric $(Na_{0.5}Bi_{0.5})TiO_3$ (NBT) thin films were prepared by a modified sol-gel process. Their structural, dielectric and pyroelectric properties were investigated as a function of the excess Na/Bi ratio and the annealing temperature. In the case of thin films containing no excess Na and Bi, only partial amounts of the perovskite NBT were crystallized, where the films consisted mainly of the pyrochlore phase of $Bi_2Ti_2O_7$ for annealing conditions of $600{\sim}800^{\circ}C$. With increasing excess Na/Bi ratio, the proportion of the perovskite phase effectively increased due to the compensation of the volatile Na and Bi components. For a Na/Bi ratio of 2.0, the thin film with single NBT perovskite phase was obtained within XRD detection limit after annealing at $700^{\circ}C$ for 10 min and it showed the excellent dielectric properties, ${\varepsilon}r$ of ~550 and tan ${\delta}$ of 0.03. While these properties were degraded for Na/Bi ratio of 2.5 despite the existence of pure perovskite phase. The NBT thin film with Na/Bi ratio of 2.0 are also promising candidates for applications requiring pyroelectric devices because it was found to have pyroelectric coefficients of $1.3{\sim}7nC/cm^2K$ in the temperature range of $30{\sim}100^{\circ}C$.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.51 no.12
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• pp.597-600
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• 2002

Film Bulk Acoustic wave Resonator (FBAR) using thin piezoelectric films can be made as monolithic integrated devices with compatibility to semiconductor process, leading to small size and low cost, high Q RF circuit elements with wide applications in communications area. This paper presents a MMIC compatible suspended FBAR using surface micromachining. Membrane is composed $Si_3N_4SiO_2Si _3N_4$ multi layer and air gap is about 50${\mu}{\textrm}{m}$. Firstly, We perform one dimensional simulation applying transmission line theorem to verify resonance characteristic of the FBAR. Process of the FBAR is used MEMS technology. Fabricated FBAR resonate at 2.4GHz, $K^2_{eff}$ and Q are 4.1% and 1100.

• Korean Journal of Materials Research
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• v.19 no.12
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• pp.637-643
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• 2009

In this study, we analyzed the effect of silicon oxynitride matrix on the optical properties of Au nanoparticles dispersed on composite film and explored the effectiveness of the silicon in fine tuning the refractive index of the composite film for applications in optical waveguide devices. The atomic fraction of nitrogen in $SiO_xN_y$ films was controlled by varying the relative flow ratio of nitrogen gas in reactive sputtering and was evaluated optically using an effective medium theory with Bruggeman geometry consisting of a random mixture between $SiO_2$ and $Si_3N_4$. The Au nanoparticles were embedded in the $SiO_xN_y$ matrix by employing the alternating deposition technique and clearly showed an absorption peak due to the excitation of surface plasmon. With increasing nitrogen atomic fraction in the matrix, the surface plasmon resonance wavelength shifted to a longer wavelength (a red-shift) with an enhanced resonance absorption. These characteristics were interpreted using the Maxwell-Garnett effective medium theory. The formation of a guided mode in a slab waveguide consisting of 3 $\mu$m thick Au:$SiO_xN_y$ nanocomposite film was confirmed at the telecommunication wavelength of 1550 nm by prism coupler method and compared with the case of using $SiO_2$ matrix. The use of $SiO_xN_y$ matrix provides an effective way of controlling the mode confinement while maintaining or even enhancing the surface plasmon resonance properties.

• Korean Journal of Optics and Photonics
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• v.22 no.2
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• pp.90-95
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• 2011

We propose a super-thin and light-weight liquid crystal cell, in which glass substrates are eliminated and polarizers are used as substrates. We fabricate a polarizer substrate by depositing a-SiOX as a buffer layer, indium-tin-oxide as a transparent conducting layer, and a-SiOX as an alignment layer on a polarizer sequentially at a low temperature. We use the ion-beam method to align liquid crystals on polarizer substrates.

• Proceedings of the Optical Society of Korea Conference
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• 2003.07a
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• pp.284-285
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• 2003

Significant research interest in the growth and characterization of $Y_2$O$_3$：Eu$^{3+}$ thin films has been shown over the last few years because of the promise for applications of display devices. Although an Eu-doped oxysulfide (Eu： $Y_2$O$_2$S) which has an efficiency of 13％ has been used for a traditional cathode ray tube (CRT) red phosphor, the sulfide system is known to degrade rapidly under the high current densities needed for field-emission display (FED) technology. (omitted)d)

• Proceedings of the Materials Research Society of Korea Conference
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• 2003.03a
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• pp.35-35
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• 2003

Recent progress in the integration of the ferroelectric random access memories (FRAM) has attracted much interest. Strontium bismuth tantalate(SBT) is one of the most attractive materials for use in nonvolatile-memory applications due to low-voltage operations, low leakage current, and its excellent fatigue-free property. High-density FRAMs operated at a low voltage below 1.5V are applicable to mobile devices operated by battery. SBT films thinner than 0.1 #m can be operated at a low voltage, because the coercive voltage (Vc) decreases as the film thickness is reduced. In addition, the thickness of the SBT film will have to be reduced so it can fit between adjacent storage nodes in a pedestal type capacitor in future FRAMs.

• The Korean Journal of Ceramics
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• v.7 no.1
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• pp.36-40
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• 2001

In order to fabricate uncooled IR sensors for pyroelectric applications, multilayered thin films of Pt/PbTiO$_3$/Pt/Ti/Si$_3$N$_4$/SiO$_2$/Si and thermally isolating membrane structures of square-shaped/cantilevers-shaped microstructures were prepared. Cavity was also fabricated via direct silicon wafer bonding and etching technique. Metallic Pt layer was deposited by ion beam sputtering while PbTiO$_3$ thin films were prepared by sol-gel technique. Micromachining technology was used to fabricate microstructured-membrane detectors. In order to avoid a difficulty of etching active layers, silicon-nitride membrane structure was fabricated through the direct bonding and etching of the silicon wafer. Although multilayered thin film deposition and device fabrications were processed independently, these could b integrated to make IR micro-sensor devices.