• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11b
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• pp.537-540
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• 2001

This paper presents the characteristics of Ta-N thin-film for high precision resistors, which were deposited on Si substrate by DC reactive magnetron sputtering in an argon-nitrogen atmosphere(Ar-(4~16 %)$N_2$). Structural properties studied using X-ray diffraction(XRD) indicate the presence of TaN, $Ta_3N_5$ or a mixture of Ta-N phases in the films depending on the amount of nitrogen in the sputtering gas. The chemical composition are investigated by auger electro spectroscopy(AES). The optimized conditions of Ta-N thin-film resistors were deposited in 4 % $N_2$ gas flow ratio. Under optimum conditions, the Ta-N thin-film resistors are obtained a high resistivity, $\rho=305.7{\mu}{\Omega}cm$, a low temperature coefficient of resistance, TCR=-36 $ppm/^{\circ}C$.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.06a
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• pp.50-50
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• 2007

We report the effect of the film thickness on electrical properties of Ti(N) film resistors. The applications of titanium nitride thin film resistor in $\Pi$-type attenuators are also characterized. As film thickness decreases from 100 to 30 nm, temperature coefficient of resistance significantly decreases from -60 to -148 ppm/K, while sheet resistance increases from 37 to $270\;{\Omega}/{\square}$. The characterizations of 20dB-attenuators using thin film resistors are improved in comparison with those using thick film resistors. The $\Pi$-type attenuators using Ti(N) thin film resistors exhibit a attenuation of -19.94 dB and voltage standing wave ratio of 1.16 at a frequency of 2.7 GHz.

• Proceedings of the Korea Institute of Applied Superconductivity and Cryogenics Conference
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• 2003.02a
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• pp.143-145
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• 2003

External shunt resistor is used in Nb/AlOx/Nb Josephson junction which is basic component of RSFQ circuit. This is to increase damping and to make the so called 'self-reset' optimized for high speed operation. In this study, we fabricated and investigated sheet resistance of Pd and PdAu thin film, and simulated the inductance effect of the shunt resistor to the Josepshon junction dynamics.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11a
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• pp.537-540
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• 2001

This paper presents the characteristics of Ta-N thin-(ibm for high precision resistors, which were deposited oni substrate by DC reactive magnetorn sputtering in an argon-nitrogen atmosphere(Ar-(4∼16%)N$_2$). Sturcutural properties sutided using X-ray diffraction (XRD) indicate the presence of TaN, Ta$_3$N$\sub$5/ or a mixture of Ta-N phases in the films depending on the amount of nitrogen in the sputtering gas. The chemical composition are investigated by auger electro spectroscopy(AES). The optimized conditions of Ta-N thin-film resistors were deposited in 4 % N$_2$ gas flow ratio. Under optimum conditions, the Ta-N thin-film resistors are obtained a high resistivity, $\rho$=305.7 ${\mu}$Ωcm, a low temperature coefficient of resistance, TCR=-36 ppm/$^{\circ}C$.

• Journal of the Korean Vacuum Society
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• v.9 no.3
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• pp.237-241
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• 2000

The structural, electrical and etching characteristics of Al alloy thin film with low impurity concentrations AlNd deposited by using do magnetron sputtering deposition are investigated for the applications as gate bus line in the TFt-LCD panel. And ITO thin film was deposited on AlNd, then the contact resistance was measured by Kelvin resistor. The deposited thin films show the decrease of resistivity and the increase of grain size after the RTA at $300^{\circ}C$ for 20 min. Moreover, the resistivity of AlNd does not show appreciable grain size dependence after RTA. It is concluded that the decrease of resistivity after RTA is due to the increase of grain size. The annealed AlNd is found to be hillock free. The etching profiles of AlNd was good and the minimun contact resistance was about $110\;{\mu\Omega}cm$. Calculation results reveal that the AlNd (2wt.%) thin film can be applicable to 25" SXGA class TFT-LCD panels.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.30 no.9
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• pp.566-571
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• 2017

A soft baking process was used to enhance the electrical characteristics of solution-processed indium-zincoxide (IZO) thin-film transistors (TFTs). We demonstrate a stable soft baking process using a hot plate in air to maintain the electrical stability and improve the electrical performance of IZO TFTs. These oxide transistors exhibited good electrical performance; a field-effect mobility of $7.9cm^2/Vs$, threshold voltage of 1.4 V, sub-threshold slope of 0.5 V/dec, and a current on/off ratio of $2.9{\times}10^7$ were measured. To investigate the static response of our solutionprocessed IZO TFTs, simple resistor load type inverters were fabricated by connecting a resistor (5 or $10M{\Omega}$). Our IZO TFTs, which were manufactured using the soft baking process at a baking temperature of $120^{\circ}C$, performed well at the operating voltage, and are therefore a good candidate for use in advanced logic circuits and transparent display backplanes.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.30 no.7
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• pp.437-440
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• 2017

We report on amorphous thin-film transistors (TFTs) with indium zinc oxide (IZO) channel layers that were fabricated via a solution process. We prepared the IZO semiconductor solution with 0.1 M indium nitrate hydrate and 0.1 M zinc acetate dehydrate as precursor solutions. The solution- processed IZO TFTs showed good performance: a field-effect mobility of $7.29cm^2/Vs$, a threshold voltage of 4.66 V, a subthreshold slope of 0.48 V/dec, and a current on-to-off ratio of $1.62{\times}10^5$. To investigate the static response of our solution-processed IZO TFTs, simple resistor load-type inverters were fabricated by connecting a $2-M{\Omega}$ resistor. Our IZOTFTbased N-MOS inverter performed well at operating voltage, and therefore, isa good candidate for advanced logic circuits and display backplane.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.65 no.3
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• pp.445-451
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• 2016

General fuse elements of solution for fast acting operation characteristics made using silver or silver alloy, those are not able to dominate cost competition to the advanced global leaders that have not only high technology but competitive price. In this study, the method that compose the fuse elements manufactured solution of fast acting operation characteristics by using precision multi-layer thin film plating and helical cutting process from low-priced copper metal. Furthermore, in order to move rated current line of fuse due to the heat loses, the manufacture construction method of fixed resistor is introduced, and then Ni-P plating layer and Sn plating layer are introduced multiply for controling fine opening time characteristics. So this study can establish the high productive and low-priced production method.

• Proceedings of the KIEE Conference
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• 2000.07c
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• pp.1637-1639
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• 2000

Resister networks are used widely in many, high frequency applications for attenuators. In this paper we studied the frequency characteristics of attenuator using network analyzer and compared Ni-Cr thin film resistor with thick film resistor attenuator. Also from return loss, insertion loss and VSWR we obtained the maximum available frequency of these attenuators.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.07b
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• pp.913-917
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• 2003

In the electronic components and devices fabrication, thin film resistors with low TCR(temperature coefficient of resistance) and high precision have been used over 3 GHz microwave in recent years. Ni-Cr alloys thin films resistors is one of the most commonly used resistive materials because it has low TCR and highly stable resistance. In this work, we fabricated thin film resistors using Evanohm alloys target(72Ni-20Cr-3Al-4Mn-Si) of s-type with excellent resistors properties by RF-sputtering. Also we reported best deposited conditions of thin film resistors for microwave to observe microstructure and electronic properties of thin film according to deposited conditions(between target and substrate, power supply)