• Title/Summary/Keyword: Thick films

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Electrical Properties of BaTiO3 Thick Films Fabricated by Screen-printing Method

  • Ahn, Byeong-Lib;Lee, Sung-Gap
    • Transactions on Electrical and Electronic Materials
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    • v.8 no.4
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    • pp.149-152
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    • 2007
  • [ $(Ba_{0.6}Sr_{0.3}Ca_{0.1})TiO_3$ ](BSCT) thick films doped with 0.1 mol% $MnCO_3\;and\;Yb_2O_3(0.1{\sim}0.7mol%)$ were fabricated by the screen printing method on the alumina substrates. And the structural and electrical properties as a function of $Yb_2O_3$ amount were investigated. The exothermic peak was observed at around $680^{\circ}C$ due to the formation of the poly crystalline perovskite phase. The lattice constants of the BSCT thick film doped with 0.7 mol% is 0.3994 nm. The specimen doped with 0.7 mol% $Yb_2O_3$ showed dense and uniform grains with diameters of about $4.2{\mu}m$. The average thickness of all BSCT thick films was approximately $70{\mu}m$. Relative dielectric constant and dielectric loss of the specimen doped with 0.7 mol% $Yb_2O_3$ were 2823 and 3.4%, respectively. The Curie temperature of the BSCT thick films doped with 0.1 mol% $Yb_2O_3$ was $46^{\circ}C$.

Structural and Dielectirc Properties of $Ba_{0.5}Sr_{0.5}TiO_3$ Thick Films Doped with MgO (MgO가 첨가된 $Ba_{0.5}Sr_{0.5}TiO_3$ 후막의 구조 및 유전 특성)

  • Kang, Won-Seok;Nam, Sung-Pil;Koh, Jung-Hyuk;Lee, Sung-Gap;Lee, Young-Hie
    • The Transactions of the Korean Institute of Electrical Engineers C
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    • v.55 no.12
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    • pp.555-559
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    • 2006
  • Using the $Ba_{0.5}Sr_{0.5}TiO_3$(BST) powders prepared by the Sol-Gel method, the BST thick films were fabricated on the $Al_2O_3 $substrates coated with Pt by the screen printing method. Compared with pure BST thick films, the structural and dielectric properties of the BST thick films doped with $1{\sim}10$ wt % MgO were investigated. It was observed that the Mg substitution into BST causes a shift in the cubic-tetragonal BST phase transition peak to a lower temperature. The microstructure of the BST substituted with Mg was homogeneous and dense. Mg substitution into BST had a significant effect on the grain size reduction. Dielectric constant was decreased with increasing the MgO content and temperature. In the case of BST thick films doped with 1 wt% MgO, the relative permittivity and dielectric loss were 1581 and 1.4 % at 1 MHz.

Characteristics of CuO doped WO3 Thick Film for Gas Sensors (CuO가 첨가된 WO3 후막 가스센서 특성 연구)

  • Yu, Il;Lee, Don-Kyu;Shin, Deuck-Jin;Yu, Yoon-Sik
    • The Transactions of The Korean Institute of Electrical Engineers
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    • v.59 no.9
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    • pp.1621-1625
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    • 2010
  • Recently, due to increase in the usage of toxic gas and inflammability gas, the ability to monitor and precisely measurement of these gases is crucial in preventing the occurrence of various accidents. CuO doped and undoped $WO_3$ thick films gas sensors were prepared using screen-printing method on alumina substrates. A structural properties of $WO_3$:CuO thick films had monoclinic phase and triclinic phase of $WO_3$ together. Sensitivity of $WO_3$:CuO sensor at 2000 ppm of $CO_2$ gas and 50 ppm of $H_2S$ gas was investigated. 4 wt% Cu doped $WO_3$ thick films had the highest sensitivity of $CO_2$ gas and $H_2S$ gas.

Electronic properties of PZT(20/80) thick film and PZT(80/20) thin film multilayer with variation of sintering temperature (다층 PZT(20/80)후막과 PZT(80/20)박막의 소결온도에 따른 전기적 특성)

  • Noh, Hyun-Ji;Lee, Sung-Gap;Park, Sang-Man;Bae, Seon-Gi
    • Proceedings of the KIEE Conference
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    • 2006.07d
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    • pp.2209-2210
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    • 2006
  • In this paper, PZT(20/80) thick films were fabricated by the screen-printing method. And the PZT(80/20) coating solution was synthesized by the sol-gel method. PZT(20/80) thick films were screen-printed on the alumina substrates. PZT(80/20) thin film was spin-coaled on the PZT(20/80) thick films to obtain densification. And the structural and electrical properties of PZT thick films were investigated with variation of sintering temperature. The PZT specimen sintered at $650^{\circ}C$ showed good relative dielectric constant of 219 and dielectric loss of 2.45%. Also the remanent polarization and the coercive field wore 16.48 ${\mu}C/cm^2$ and 35.48kV/cm, respectively.

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Electronic properties of PZT(20/80) thick film and PZT(80/20) thin film multilayer with variation of sintering temperature (다층 PZT(20/80)후막과 PZT(80/20)박막의 소결온도에 따른 전기적 특성)

  • Noh, Hyun-Ji;Lee, Sung-gap;Park, Sang-Man;Bae, Seon-Gi
    • Proceedings of the KIEE Conference
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    • 2006.07a
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    • pp.577-578
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    • 2006
  • In this paper, PZT(20/80) thick films were fabricated by the screen-printing method. And the PZT(80/20) coating solution was synthesized by the sol-gel method. PZT(20/80) thick films were screen-printed on the alumina substrates. PZT(80/20) thin film was spin-coated on the PZT(20/80) thick films to obtain densification. And the structural and electrical properties of PZT thick films were investigated with variation of sintering temperature. The PZT specimen sintered at 650f showed good relative dielectric constant of 219 and dielectric loss of 2.45%. Also the remanent polarization and the coercive field were 16.48${\mu}C/cm^2$ and 35.48kV/cm, respectively.

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Electronic properties of PZT(20/80) thick film and PZT(80/20) thin film multilayer with variation of sintering temperature (다층 PZT(20/80) 후막과 PZT(80/20) 박막의 소결온도에 따른 전기적 특성)

  • Noh, Hyun-Ji;Lee, Sung-Gap;Park, Sang-Man;Bae, Seon-Gi
    • Proceedings of the KIEE Conference
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    • 2006.07b
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    • pp.1243-1244
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    • 2006
  • In this paper, PZT(20/80) thick films were fabricated by the screen-printing method. And the PZT(80/20) coating solution was synthesized by the sol-gel method. PZT(20/80) thick films were screen-printed on the alumina substrates. PZT(80/20) thin film was spin-coated on the PZT(20/80) thick films to obtain densification. And the structural and electrical properties of PZT thick films were investigated with variation of sintering temperature. The PZT specimen sintered at $650^{\circ}C$ showed good relative dielectric constant of 219 and dielectric loss of 2.45%. Also the remanent polarization and the coercive field were $16.48{\mu}C/cm^2$ and 35.48kV/cm, respectively.

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Electric Properties of Superconducting Ceramic Thick Films (초전도 세라믹 후막의 전기적 특성)

  • Lee, Sang-Heon
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.18 no.5
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    • pp.464-467
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    • 2005
  • BiSrCaCuO superconducting ceramic thick films were fabricated by chemical process. The x ray diffraction pattern of the BiSrCaCuO thick films contained 110 K phase. The critical temperature of BiSrCaCuO thick films were Tc=95 K-97 K. The critical temperature and critical density of BiSrCaCuO thick film grown at $750 {\circ}C$ were Tc = 95 K and $Jc= 7{\times}10^{6} A/cm^{2}$ We obtained high-Jc as-grown BiSrCaCuO on an MgO substrate by low fressure CVD.

Electronic properties of PZT(20/80) thick film and PZT(80/20) thin film multilayer with variation of sintering temperature (다층 PZT(20/80)후막과 PZT(80/20)박막의 소결온도에 따른 전기적 특성)

  • Noh, Hyun-Ji;Lee, Sung-Gap;Park, Sang-Man;Bae, Seon-Gi
    • Proceedings of the KIEE Conference
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    • 2006.07c
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    • pp.1703-1704
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    • 2006
  • In this paper, PZT(20/80) thick films were fabricated by the screen-printing method. And the PZT(80/20) coating solution was synthesized by the sol-gel method. PZT(20/80) thick films were screen-printed on the alumina substrates. PZT(80/20) thin film was spin-coated on the PZT(20/80) thick films to obtain densification. And the structural and electrical properties of PZT thick films were investigated with variation of sintering temperature. The PZT specimen sintered at $650^{\circ}C$ showed good relative dielectric constant of 219 and dielectric loss of 2.45%. Also the remanent polarization and the coercive field were $16.48{\mu}C/cm^2$ and 35.48kV/cm, respectively.

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Properties of Ag Thick Films Fabricated by Using Low Temperature Curable Ag Pastes (저온 경화형 Ag 페이스트 및 이를 이용한 Ag 후막의 제조 및 특성)

  • Park, Joon-Shik;Hwang, Joon-Ho;Kim, Jin-Gu;Kim, Yong-Han;Park, Hyo-Derk;Kang, Sung-Goon
    • Korean Journal of Materials Research
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    • v.13 no.1
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    • pp.18-23
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    • 2003
  • Properties of Ag thick films fabricated by using low temperature curable silver pastes were investigated. Ag pastes were consisted of polymer resins and silver powders. Ag pastes were used for conductive or fixing materials between board and various electrical and electronic devices. Low temperature curable Ag pastes have some advantages over high temperature curable types. In cases of chip mounting, soldering properties were required for screen printed Ag thick films. In this study, four types of Ag pastes were fabricated with different compositions. Screen printed Ag thick films on alumina substrates were fabricated at various curing temperatures and times. Thickness, resistivity, adhesive strength and solderability of fabricated Ag thick films were characterized. Finally, Ag thick films produced using Ag pastes, sample A and B, cured at $150^{\circ}C$ for longer than 6 h and $180^{\circ}C$ for longer than 2 h, and $150^{\circ}C$ for longer than 1 h and $180^{\circ}C$ for 1 h, respectively, showed low resistivities of $10^{-4}$ $∼10^{-5}$ Ωcm and good adhesive strength of 1∼5 Mpa. Soldering properties of those Ag thick films with curing temperatures at solder of 62Sn/36Pb/3Ag were also investigated.

The Formation of $YBa_2Cu_3O_{7-x}$(Y123) and CuO Phases in Cu-sheath YBCO Thick Films (동피복 YBCO 후막에서 $YBa_2Cu_3O_{7-x}$(Y123) 및 CuO상의 형성 기구)

  • Kim K.J.;Han S. C.;Han Y. H.;Jeong N. H.;Yun H. J.;Oh J. M.;Choi H. R.;Sung T. H.
    • Progress in Superconductivity
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    • v.6 no.2
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    • pp.129-132
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    • 2005
  • The formation behavior of $YBa_2Cu_3O_{7-x}$(Y123) and CuO phases in the heat-treated Cu-sheathed YBCO thick films was studied. The thick films were prepared by screen-printing method using $BaCO_3$ and Y211 powders on Cu tapes. The screen-printed thick films were placed at the center of the tube furnace, heated to $930^{\circ}C$ in air atmosphere and then maintained at the temperature for 60 sec - 300 sec. The microstructure and phases formed in the thick films were investigated by using optical microscope, X-ray diffraction (XRD) and SEM image analysis. During the heat treatment, partial melting occurred rapidly in the printed layers by peritectic reaction between CuO and precursor powders, and then YBCO superconducting phases nucleated from the Cu tapes and grew in a form of thick films.

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