• Nuclear Engineering and Technology
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• v.43 no.6
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• pp.557-566
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• 2011

A cold spray coating (CSC) of copper was studied for its application to a high-level radioactive waste (HLW) disposal canister. Several copper coatings of 10 mm thick were fabricated using two kinds of copper powders with different oxygen contents, and SS 304 and nodular cast iron were used as their base metal substrates. The fabricated CSC coppers showed a high tensile strength but were brittle in comparison with conventional non-coating copper, hereinafter defined to as "commercial copper". The corrosion behavior of CSC coppers was evaluated by comparison with commercial coppers, such as extruded and forged coppers. The polarization test results showed that the corrosion potential of the CSC coppers was closely related to its purity; low-purity (i.e., high oxygen content) copper exhibited a lower corrosion potential, and high-purity copper exhibited a relatively high corrosion potential. The corrosion rate converted from the measured corrosion current was not, however, dependent on its purity: CSC copper showed a little higher rate than that of commercial copper. Immersion tests in aqueous HCl solution showed that CSC coppers were more susceptible to corrosion, i.e., they had a higher corrosion rate. However, the difference was not significant between commercial copper and high-purity CSC copper. The decrease of corrosion was observed in a humid air test presumably due to the formation of a protective passive film. In conclusion, the results of this study indicate that CSC application of copper could be a useful option for fabricating a copper HLW disposal canister.

• Current Photovoltaic Research
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• v.11 no.1
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• pp.8-12
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• 2023

In this work, we investigated the thickness of Ag precursor layer to improve the performance of flexible CIGSe solar cells grown on stainless steel (STS) substrates through three-stage co-evaporation with Ga grading followed by alkali treatments. The small amount of incorporated Ag in CIGSe films showed enhancement in the grain size and device efficiency. With an optimal 6 nm-thick Ag layer, the best cell on the STS substrate yielded more than 16%, which is comparable to the soda-lime glass (SLG) substrate. Thus, the addition of controlled Ag combined with alkali post-deposition treatment (PDT) led to increased open-circuit voltage (VOC), accompanied by the increased built-in potential as confirmed by capacitance-voltage (C-V) measurements. It is related to a reduction of charge recombination at the depletion region. The results suggest that Ag alloying and alkali PDT are essential for producing highly efficient flexible CIGSe solar cells.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.13 no.5
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• pp.254-259
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• 2003

In the fabrication process of transparent conducting thin films of the ATO (antimony-doped tin oxide) on a soda lime glass substrate by a sol-gel dip coating method, the effects of the $SiO_2$ buffer layer formed on the substrate and $N_2$ annealing treatment were investigated by XPS (X-ray photoelectron spectroscopy) analysis. Optical transmittance and electrical resistivity of the 400 nm-thick ATO thin films which were deposited on $SiO_2$ buffer layer/soda lime glass and then annealed under nitrogen atmosphere were 84 % and $5.0\times 10^{-3}\Omega \textrm{cm}$ respectively. The XPS analysis confirmed that a $SiO_2$ buffer layer inhibited Na ion diffusion from the substrate, resulting in prohibiting the formation of a secondary phase such as $Na_2SnO_3$ and SnO and increasing Sb ion concentration and ratio of $Sb^{5+}/Sb^{3+}$ in the film. And it was also found that $N_2$ annealing treatment leads to the reduction of $Sn^{4+}$as well as $Sb^{5+}$ however the reduction of $Sn^{4+}$ is more effective and therefore consequently results in decrease in the electrical resistivity to produce an excellent electrical properties of the film.

• Korean Journal of Materials Research
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• v.6 no.7
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• pp.723-732
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• 1996

Cu films were deposited by chemical wapor deposition on the as-received substrates (TiN/Si) and three kinds of Cu-seeded substrates (Cu/TiN/Si) which had seeding layer in the thick ness of 5 ${\AA}$ and 130 ${\AA}$ coated by ICB(Ionized Cluster Beam) method. The effect of Cu seeding layers on the growth rate, crystallinity, grain size uniformity and film adhesion strength of final CVD-Cu films was investigated by scanning eletron microscopy(SEM), X-ray diffractometry and scratch test. The growth rate was found to incresase somewhat in the case of ICB-seeding. The XRD patterns of the Cu films on the as-received substrate and ICB Cu-seeded substrates exhibited the diffraction peaks corresponding to FCC phase, but the peak intensity ratio($I_{111}/I_{200}$) of Cu films deposited on the ICB Cu-seeded substrates increased compared with that of Cu films on the as-received substrate. The resistivity of final Cu film on 40 ${\AA}$ seeded substrate was observed as the lowest value, 2.42 $\mu\Omega\cdot$cm compared with other Cu films. In adhesion test, as the seeding thickness increased from zero to 130 ${\AA}$, the adhesion strength increased from 21N to 27N.

• Journal of the Korean Electrochemical Society
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• v.8 no.1
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• pp.32-36
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• 2005

[ $WO_3$ ] and $NiO-WO_3$ thin films were deposited on a Si (100) substrate by using high vacuum thermal evaporation. The effects of various film thicknesses on the surface morphology $WO_3$ and $NiO-WO_3$ thin films were investigated. X-ray diffraction (XRD), Scanning electron microscopy (SEM) and X-ray photoelectron spectroscopy(XPS) were employed to characterize the deposited films. The results suggest that as $WO_3$ thin films became thick, their grain grew up to a $0.6{\mu}m$. On the other hand, NiO-doping to $WO_3$ thin films inhibited the grain growth five times less than undoped $WO_3$ thin films. This results show that NiO doping inhibited the grain growing of $WO_3$ thin films. Also, the variation of NOx sensitivity $(R_{NOx}/R_{air})$ to the thickness of $WO_3$ and $NiO-WO_3$ thin films were measured according to the thickness change of thin films and the working temperature of sensor in 5ppm NOx gas. As a result, $NiO-WO_3$ thin films showed more excellent properties than $WO_3$ thin films for NOx sensitivity.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.11 no.5
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• pp.796-805
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• 2000

A 30GHz band low noise amplifier module, which has linear gain of 30dB and noise figure of 2.6dB, for 30GHz satellite communication transponder was developed by use of MMIC and thin film MIC technologies. Two kinds of MMIC circuits were used for the low noise amplifier module, the first one is ultra low noise MMIC circuit and the other is wideband and high gain MMIC circuit. The pHEMT technology with 0.15$mu extrm{m}$ of gate length was applied for MMIC fabrication. Thin film microstrip lines on alumina substrate were used to interconnect two MMIC chips, and the thick film bias circuit board were developed to provide the stabilized DC bias. The input interface of the low noise amplifier module was designed with waveguide type to receive the signal from antenna directly, and the output port was adopted with K-type coaxial connector for interface with the frequency converter module behind the low noise amplifier module. Space qualified manufacturing processes were applied to manufacture and assemble the low noise amplifier module, and space qualification level of environment tests including thermal and vibration test were performed for it. The developed low noise amplifier was measured to show 30dB of minimum gain, $\pm$0.3dB of gain flatness, and 2.6dB of maximum noise figure over the desired operating frequency range from 30 to 31 GHz.

• Journal of Sensor Science and Technology
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• v.7 no.3
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• pp.147-153
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• 1998

The strain characteristics of a fiber optic Fabry-Perot pressure sensor with high sensitivity using a $Si_{3}N_{4}/SiO_{2}/Si_{3}N_{4}$ (N/O/N) diaphragm is experimentally investigated. A 600 nm thick N/O/N diaphragm was fabricated by silicon anisotropic etching technology in 44 wt% KOH solution. An interferometric fiber optic pressure sensor has been manufactured by using a fiber optic Fabry-Perot intereferometer and a N/O/N diaphragm. The 2 cm length fiber optic Fabry-Perot interferometers in the continuous length of single mode fiber were produced with two pieces of single mode fiber coated with $TiO_{2}$ dielectric film utilizing the fusion splicing technique. The one end of the fiber optic Fabry-Perot interferometer was bonded to a N/O/N diaphragm. and the other end was connected to an optical setup through a 3 dB coupler. For the N/O/N diaphragm sized $2{\times}2\;mm^{2}$ and $8{\times}8\;mm^{2}$, the pressure sensitivity was measured 0.11 rad/kPa and 1.57 rad/kPa, respectively, and both of the nonlinearities were less than 0.2% FS.

• Korean Journal of Soil Science and Fertilizer
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• v.29 no.1
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• pp.34-43
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• 1996

Determining the actual evapotranspiration(ETa) of a crop, and appropriate water management of the crop based on the ETa are very important For increasing the yield. The present study aimed at determining ETa and crop coefficient of sesame growing under different climatic conditions with the transparent thin polyethylene film mulch(0.03 mm thick) and without this mulch. Bottomless cylindrical lysimeters(105cm in diameter, 120cm in height, protruded 20 cm above the soil surface) were installed on the field of sandy loam "Bonyang series" soil with a moderate drainage. The determination of ETa was performed by measuring each component of a model equation, $ETa=(R+I)-\{Ro+(D1+D2)\}+C{\pm}{\Delta}S$. Sesame, cv. "Ansan" was sown in two rows with the spacing of $50{\times}15cm$ on May 10 in 1991 and 1992. The mulching covers 80% of the soil surface. Sesame consumed the water of 139.0 mm(1.53 mm/day) and 171.2 mm(1.59 mm/day) in ETa without the film mulch, but that of 132.6 mm(1.46 mm/day) and 199.8 mm(1.85 mm/day) with its mulching through both years of 1991 and 1992, respectively. The ETa's accounted for 52 and 69% of the potential evapotranspiration(ETp) in the mulched crop, and 54 and 59% of ETp in the non-mulched crop 1991 through 1992, respectively. Its ETa's were much more and their gap between the mulching and non-mulching treatment was larger in 1992 than in 1991 as a result of the better climatic condition of 1992.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.431-432
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• 2012

In the era of 20 nm scaled semiconductor volume manufacturing, Microelectronics Manufacturing Engineering Education is presented in this paper. The purpose of microelectronic engineering education is to educate engineers to work in the semiconductor industry; it is therefore should be considered even before than technology development. Three Microelectronics Manufacturing Engineering related courses are introduced, and how undergraduate students acquired hands-on experience on Microelectronics fabrication and manufacturing. Conventionally employed wire bonding was recognized as not only an additional parasitic source in high-frequency mobile applications due to the increased inductance caused from the wiring loop, but also a huddle for minimizing IC packaging footprint. To alleviate the concerns, chip bumping technologies such as flip chip bumping and pillar bumping have been suggested as promising chip assembly methods to provide high-density interconnects and lower signal propagation delay [1,2]. Aluminum as metal interconnecting material over the decades in integrated circuits (ICs) manufacturing has been rapidly replaced with copper in majority IC products. A single copper metal layer with various test patterns of lines and vias and $400{\mu}m$ by $400{\mu}m$ interconnected pads are formed. Mask M1 allows metal interconnection patterns on 4" wafers with AZ1512 positive tone photoresist, and Cu/TiN/Ti layers are wet etched in two steps. We employed WPR, a thick patternable negative photoresist, manufactured by JSR Corp., which is specifically developed as dielectric material for multi- chip packaging (MCP) and package-on-package (PoP). Spin-coating at 1,000 rpm, i-line UV exposure, and 1 hour curing at $110^{\circ}C$ allows about $25{\mu}m$ thick passivation layer before performing wafer level soldering. Conventional Si3N4 passivation between Cu and WPR layer using plasma CVD can be an optional. To practice the board level flip chip assembly, individual students draw their own fan-outs of 40 rectangle pads using Eagle CAD, a free PCB artwork EDA. Individuals then transfer the test circuitry on a blank CCFL board followed by Cu etching and solder mask processes. Negative dry film resist (DFR), Accimage$^{(R)}$, manufactured by Kolon Industries, Inc., was used for solder resist for ball grid array (BGA). We demonstrated how Microelectronics Manufacturing Engineering education has been performed by presenting brief intermediate by-product from undergraduate and graduate students. Microelectronics Manufacturing Engineering, once again, is to educating engineers to actively work in the area of semiconductor manufacturing. Through one semester senior level hands-on laboratory course, participating students will have clearer understanding on microelectronics manufacturing and realized the importance of manufacturing yield in practice.

• Structural Engineering and Mechanics
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• v.30 no.6
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• pp.713-732
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• 2008

Serviceability and durability of the concrete members can be seriously affected by the corrosion of steel rebar. Carbonation front and or chloride ingress can destroy the passive film on rebar and may set the corrosion (oxidation process). Depending on the level of oxidation (expansive corrosion products/rust) damage to the cover concrete takes place in the form of expansion, cracking and spalling or delamination. This makes the concrete unable to develop forces through bond and also become unprotected against further degradation from corrosion; and thus marks the end of service life for corrosion-affected structures. This paper presents an analytical model that predicts the weight loss of steel rebar and the corresponding time from onset of corrosion for the known corrosion rate and thus can be used for the determination of time to cover cracking in corrosion affected RC member. This model uses fully the thick-walled cylinder approach. The gradual crack propagation in radial directions (from inside) is considered when the circumferential tensile stresses at the inner surface of intact concrete have reached the tensile strength of concrete. The analysis is done separately with and without considering the stiffness of reinforcing steel and rust combine along with the assumption of zero residual strength of cracked concrete. The model accounts for the time required for corrosion products to fill a porous zone before they start inducing expansive pressure on the concrete surrounding the steel rebar. The capability of the model to produce the experimental trends is demonstrated by comparing the model's predictions with the results of experimental data published in the literature. The effect of considering the corroded reinforcing steel bar stiffness is demonstrated. A sensitivity analysis has also been carried out to show the influence of the various parameters. It has been found that material properties and their inter-relations significantly influence weight loss of rebar. Time to cover cracking from onset of corrosion for the same weight loss is influenced by corrosion rate and state of oxidation of corrosion product formed. Time to cover cracking from onset of corrosion is useful in making certain decisions pertaining to inspection, repair, rehabilitation, replacement and demolition of RC member/structure in corrosive environment.