• Proceedings of the Korean Powder Metallurgy Institute Conference
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• 2006.09b
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• pp.831-832
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• 2006

Solid-state processing via the bulk mechanical alloying enables us to directly fabricate $Mg_2X$ semi-conductive material performs. Precise control of chemical composition leads to investigation on the dilution and enrichment of X in $Mg_2X$. Two types of solid-state reactivity are introduced: e.g. synthesis of $Mg_2Si$ from elemental mixture Mg-Si is nucleation-controlled process while synthesis of $Mg_2Sn$ from Mg-Sn, diffusion-controlled process. Thermoelectricity of these $Mg_2X$ is evaluated for discussion on the validity and effectiveness of this new PM route as a reliable tool for fabrication of thermoelectric compounds.

• Vacuum Magazine
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• v.1 no.4
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• pp.21-24
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• 2014

Thermolectric devices could convert temperature gradient into electricity (Seebeck effect) and electric power into temperature gradient across the themoelectric element (Peltier effect). $Bi_2Te_3$ has been widely used as thermoelectric material for more than 40 years, due to the superior thermoelctric characteristics. However, Bi and Te materials are predicted to face supply shortage, giving strong necessity for the development of new thermoelctric materials. Based on the theoretical prediction, nanostructure are expected to give dramatic enhnacement of thermoelectirc characteristics by controlling phonon propagation. Thus, silicon, which had been considered as improper material for thermoelectricity, is now being considered as strong cadidate material for thermoelectricity. This review will focus on the nanotechnology applied research activities in silicon as thermoelectric materials.

• Journal of Bio-Environment Control
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• v.1 no.2
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• pp.187-191
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• 1992

온도의 계측에는 열팽창(Thermal expansion), 열전기(thermoelectricity), 전기저항(resistance)등의 원리를 이용하고 있다. (1) 열팽창식 온도계 물체의 열팽창 원리를 이용하는 온도계에는 두 금속의 열팽창 계수의 차이를 이용하는 바이멜탈 온도계, 액체의 팽창을 이용하는 유리 온도계, 기체 압력이 온도에 비례하는 것을 이용하는 압력식 온도계 등이 있으나, 이중에서 유리 온도계가 가장 널리 사용되고 있다.(중략)

• Proceedings of the KIPE Conference
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• 1998.10a
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• pp.564-568
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• 1998

All elements and systems of electronics have optimum temperature conditions. A using of the thermoelectric method of cooling is the most approach for the thermal management of power electronics. An analysis of using the thermoelectric cooling and the temperature control is given as an efficient method of ensuring a work of power electronic devices in conditions of micro-miniaturization.

• Journal of the Korean Ceramic Society
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• v.47 no.1
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• pp.47-53
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• 2010

Ceramics with perovskite-type structure are interesting functional materials for several energy conversion processes due to their flexible structure and a variety of properties. Prominent examples are electrode materials in fuel cells and batteries, thermoelectric converters, piezoelectrics, and photocatalysts. The very attractive physical-chemical properties of perovskite-type phases can be modified in a controlled way by changing the composition and crystallographic structure in tailor-made soft chemistry synthesis processes. Improved thermoelectric materials such as cobaltates with p-type conductivity and n-type manganates are developed by following theoretical predictions and tested to be applied in oxidic thermoelectric converters.

• Journal of the Korean Ceramic Society
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• v.33 no.1
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• pp.74-82
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• 1996

Fe-Si based powders prepare by melting the metals in the composition of FeSi2,.Fe0.95Mn0.05Si2 and Fe0.95Co0.05Si0.2 were used as the starting materials together with a commercial FeSi2 powder to study the effect of oxidation on their thermoelectric properties. The powders were heated at 650~80$0^{\circ}C$ in dired air before forming and sintering at 1190 and 120$0^{\circ}C$ in Ar+7%H2. The microstructure and phases of the annealed specimens were observed using the optical microscopty SEM, EDS and XRD. The thermoelectric properties of the specimens were also measured. The temperature at which Seebe다 coefficient showed the maximum value increased with the degree of oxidation. Electrical conductivity showed a tendency to decrease in the oxidized samples regardless of their compositions. Seebeck coefficient of the specimen showed almost the same value even after oxidation which may be explained by the formation of the discontinuous second phases from impurities in the oxidized specimens.

• Proceedings of the Korean Powder Metallurgy Institute Conference
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• 2006.09a
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• pp.459-460
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• 2006

N-type $Bi_2Te_3-Sb_2Te_3$ solid solutions doped with 1$CdCl_2$ was prepared by melt spinning, crushing and vacuum sintering processes. Microstructure, bending strength and thermoelectric property were investigated as a function of the doping quantity from 0.03wt.% to 0.10wt.% and sintering temperature from $400^{\circ}C$ to $500^{\circ}C$, and finally compared with those of conventionally fabricated alloys. The alloy showed a good structural homogeneity as well as bending strength of $3.88Kgf/mm^2$. The highest thermoelectric figure of merit was obtained by doping 0.03wt.% and sintering at $500^{\circ}C$.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.11a
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• pp.143-143
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• 2007

Bi-Te계 화합물은 상온영역($250^{\circ}C$이하)에서 열전특성이 우수하여, 냉각용 및 발전용 열전소자 재료로 사용되고 있다. 앞선 연구에서 MA법에 의한 La이 치환된 Bi-Te 진공가압 소결체의 열전특성이 $Bi_2Te_3$와 비교하여 향상된 값을 나타내었다. 본 연구에서는 Bi와 Te을 각각 0.01wt%, 0.02wt% La으로 미량 치환하여 melting법으로 제조한 분말을 $420^{\circ}C$, 200MPa로 가압 소결하였다. 가압 소결체의 열전특성은 Seebeck계수, 전기전도도. 열전도도를 측정하여 성능지수를 계산하였고 Bi-Te, (Bi-La)-Te, Bi-(Te-La)의 열전특성을 비교 분석하였다.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.06a
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• pp.199-199
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• 2007

Bi-Te계 화합물은 상온영역 ($250^{\circ}C$ 이하)에서 열전 특성이 우수하여, 냉각용 및 발전용 열전 소자 재료로 사용되고 있다. 앞선 연구에서 La이 치환된 Bi-Te 진공가압 소결체의 열전특성이 $Bi_2Te_3$와 비교하여 향상된 값을 나타내었다. 본 연구에서는 Bi와 Te을 각각 0.01wt% Ce으로 미량 치환하여 기계적 합금화법으로 제조한 분말을 $420^{\circ}C$, 200MPa로 진공가압 소결하였다. 진공가압 소결체의 열전특성은 Seebeck계수, 전기전도도. 열전도도를 측정하여 성능지수를 계산하였고 Bi-Te, (Bi-Ce)-Te, Bi-(Te-Ce)의 열전특성을 비교 분석하였다.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.04b
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• pp.47-47
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• 2009

The formation of variable one-dimensional structures including core/shell structure is of particular significance with respect to potential applications for thermoelectric devices with the enhanced figure of merit ($ZT=S2{\sigma}T/{\kappa}$). We report the fabrication of Bi-Te core/shell nanowire based on a novel stress induced method. Fig. 1 schematically shows the nanowire fabrication process. Bi nanowires are grown on the Si substrate by the stress-induced method, and then Te is evaporated on the Bi nanowires. Fig. 2 is a transmission electron microscopy image clearly showing a core/shell structure for which effective phonon scattering and quantum confinement effect are expected. Electrical conductivity of the core/shell nanowire was measured at the temperatures from 4K to 300K, respectively. Our results demonstrate that Bi-Te core/shell nanowire can be grown successfully by the stress-induced method. Based on the result of electrical transport measurement and characteristic morphology of rough surface, Seebeck coefficient and thermal conductivity of Bi-Te core/shell nanowires are presented.