• 제목/요약/키워드: Thermoelectirc material

검색결과 2건 처리시간 0.017초

실리콘 열전소자 기술 (Silicon Thermoelectric Device Technology)

  • 장문규
    • 진공이야기
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    • 제1권4호
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    • pp.21-24
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    • 2014
  • Thermolectric devices could convert temperature gradient into electricity (Seebeck effect) and electric power into temperature gradient across the themoelectric element (Peltier effect). $Bi_2Te_3$ has been widely used as thermoelectric material for more than 40 years, due to the superior thermoelctric characteristics. However, Bi and Te materials are predicted to face supply shortage, giving strong necessity for the development of new thermoelctric materials. Based on the theoretical prediction, nanostructure are expected to give dramatic enhnacement of thermoelectirc characteristics by controlling phonon propagation. Thus, silicon, which had been considered as improper material for thermoelectricity, is now being considered as strong cadidate material for thermoelectricity. This review will focus on the nanotechnology applied research activities in silicon as thermoelectric materials.

고주파 진공유도로로 제작한 p형 SiGe 합금의 열전변환물성 (The Thermoelectric Properties of p-type SiGe Alloys Prepared by RF Induction Furnace)

  • 이용주;배철훈
    • 한국세라믹학회지
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    • 제37권5호
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    • pp.432-437
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    • 2000
  • Thermoelectric properties of p-type SiGe alloys prepared by a RF inductive furnace were investigated. Non-doped Si80Ge20 alloys were fabricated by control of the quantity of volatile Ge. The carrier of p-type SiGe alloy was controlled by B-doping. B doped p-type SiGe alloys were synthesized by melting the mixture of Ge and Si containing B. The effects of sintering/annealing conditions and compaction pressure on thermoelectric properties (electrical conductivity and Seebeck coefficient) were investigated. For nondoped SiGe alloys, electrical conductivity increased with increasing temperatures and Seebeck coefficient was measured negative showing a typical n-type semiconductivity. On the other hand, B-doped SiGe alloys exhibited positive Seebeck coefficient and their electrical conductivity decreased with increasing temperatures. Thermoelectric properties were more sensitive to compaction pressure than annealing time. The highest power factor obtained in this work was 8.89${\times}$10-6J/cm$.$K2$.$s for 1 at% B-doped SiGe alloy.

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