• Journal of the Microelectronics and Packaging Society
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• v.30 no.4
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• pp.98-104
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• 2023

The feasibility of an efficient process proposed for Cu-Cu flip-chip bonding was evaluated by forming a porous Cu layer on Cu pillar and conducting thermo-compression sinter-bonding after the infiltration of a reducing agent. The porous Cu layers on Cu pillars were manufactured through a three-step process of Zn plating-heat treatment-Zn selective etching. The average thickness of the formed porous Cu layer was approximately 2.3 ㎛. The flip-chip bonding was accomplished after infiltrating reducing solvent into porous Cu layer and pre-heating, and the layers were finally conducted into sintered joints through thermo-compression. With reduction behavior of Cu oxides and suppression of additional oxidation by the solvent, the porous Cu layer densified to thickness of approximately 1.1 ㎛ during the thermo-compression, and the Cu-Cu flip-chip bonding was eventually completed. As a result, a shear strength of approximately 11.2 MPa could be achieved after the bonding for 5 min under a pressure of 10 MPa at 300 ℃ in air. Because that was a result of partial bonding by only about 50% of the pillars, it was anticipated that a shear strength of 20 MPa or more could easily be obtained if all the pillars were induced to bond through process optimization.