• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제43회 하계 정기 학술대회 초록집
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• pp.154-155
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• 2012

The promise of nano-crystalites (nc) as a technological material, for applications including display backplane, and solar cells, may ultimately depend on tailoring their behavior through doping and crystallinity. Impurities can strongly modify electronic and optical properties of bulk and nc semiconductors. Highly doped dopant also effect structural properties (both grain size, crystal fraction) of nc-Si thin film. As discussed in several literatures, P atoms or radicals have the tendency to reside on the surface of nc. The P-radical segregation on the nano-grain surfaces that called self-purification may reduce the possibility of new nucleation because of the five-coordination of P. In addition, the P doping levels of ${\sim}2{\times}10^{21}\;at/cm^3$ is the solubility limitation of P in Si; the solubility of nc thin film should be smaller. Therefore, the non-activated P tends to segregate on the grain boundaries and the surface of nc. These mechanisms could prevent new nucleation on the existing grain surface. Therefore, most researches shown that highly doped nc-thin film by using conventional PECVD deposition system tended to have low crystallinity, where the formation energy of nucleation should be higher than the nc surface in the intrinsic materials. If the deposition technology that can make highly doped and simultaneously highly crystallized nc at low temperature, it can lead processes of next generation flexible devices. Recently, we are developing a novel CVD technology with a neutral particle beam (NPB) source, named as neutral beam assisted CVD (NBaCVD), which controls the energy of incident neutral particles in the range of 1~300eV in order to enhance the atomic activation and crystalline of thin films at low temperatures. During the formation of the nc-/pm-Si thin films by the NBaCVD with various process conditions, NPB energy directly controlled by the reflector bias and effectively increased crystal fraction (~80%) by uniformly distributed nc grains with 3~10 nm size. In the case of phosphorous doped Si thin films, the doping efficiency also increased as increasing the reflector bias (i.e. increasing NPB energy). At 330V of reflector bias, activation energy of the doped nc-Si thin film reduced as low as 0.001 eV. This means dopants are fully occupied as substitutional site, even though the Si thin film has nano-sized grain structure. And activated dopant concentration is recorded as high as up to 1020 #/$cm^3$ at very low process temperature (＜ $80^{\circ}C$) process without any post annealing. Theoretical solubility for the higher dopant concentration in Si thin film for order of 1020 #/$cm^3$ can be done only high temperature process or post annealing over $650^{\circ}C$. In general, as decreasing the grain size, the dopant binding energy increases as ratio of 1 of diameter of grain and the dopant hardly be activated. The highly doped nc-Si thin film by low-temperature NBaCVD process had smaller average grain size under 10 nm (measured by GIWAXS, GISAXS and TEM analysis), but achieved very higher activation of phosphorous dopant; NB energy sufficiently transports its energy to doping and crystallization even though without supplying additional thermal energy. TEM image shows that incubation layer does not formed between nc-Si film and SiO2 under later and highly crystallized nc-Si film is constructed with uniformly distributed nano-grains in polymorphous tissues. The nucleation should be start at the first layer on the SiO2 later, but it hardly growth to be cone-shaped micro-size grains. The nc-grain evenly embedded pm-Si thin film can be formatted by competition of the nucleation and the crystal growing, which depend on the NPB energies. In the evaluation of the light soaking degradation of photoconductivity, while conventional intrinsic and n-type doped a-Si thin films appeared typical degradation of photoconductivity, all of the nc-Si thin films processed by the NBaCVD show only a few % of degradation of it. From FTIR and RAMAN spectra, the energetic hydrogen NB atoms passivate nano-grain boundaries during the NBaCVD process because of the high diffusivity and chemical potential of hydrogen atoms.

• 방사성폐기물학회지
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• 제5권1호
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• pp.39-52
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• 2007

사용후핵연료의 건식 재가공을 위한 핵연료 원격 제조공정중 분말제조를 위한 산화 및 OREOX(산화 환원공정)열처리 공정으로부터 $^{85}Kr$ 및 $^{14}C$ 핵분열기체의 방출거동을 정량적으로 평가하였다. 특히 사용후핵연료의 평균 연소도가 $27,000{\sim}65,000\;MWd/tU$ 범위내에서 연소도 변화에 따른 핵분열기체의 방출 분율은 측정한 실험결과와 ORIGEN 코드로부터 계산된 초기 inventory를 상호 비교하여 구하였다. $500^{\circ}C$ 1차 산화공정(voloxidation)에서 $^{85}Kr$ 및 $^{14}C(^{14}CO_2)$의 시간에 따른 방출거동은 $UO_2$ 핵연료의 $U_3O_8$으로의 분말화 정도와 밀접한 관련이 있는 것으로 보이며, 입계(grain-boundary)에 분포된 핵분열기체가 대부분 방출되는 것으로 여겨진다. 산화분말을 이용한 OREOX 공정으로부터 핵분열기체의 높은 방출율은 $700^{\circ}C$의 환원공정에서 온도 증가에 의한 기체 확산 및 $UO_2$으로의 환원에 의한 U 원자 이동성 증가에 의존하며 주로 inter-grain 및 intra-grain에 분포된 핵분열기체가 방출된 것으로 판단된다. 일차 산화공정시 $^{85}Kr$ 및 $^{14}C$ 핵분열기체의 방출 분율은 핵 연료 연소도가 증가함에 따라 높게 나타났고 방출 분율 범위는 총 inventory의 $6{\sim}12%$정도며, 산화분말의 OREOX 공정처리시 잔류 핵분열기체 대부분이 방출되는 것으로 보인다. 아울러 사용후핵 연료로부터 핵분열기체의 제거를 위해서는 고온 환원분위기보다는 산화에 의한 분말화가 더 효과적인 것으로 여겨진다.

• 한국결정성장학회지
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• 제26권3호
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• pp.115-120
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• 2016

저온용 SCR 촉매인 $MnO_x$의 촉매 활성을 높이기 위해 $TiO_2$ 지지체와 함께 조촉매로서 $CeO_2$을 사용하였고, 제조된 나노 사이즈의 촉매 특성과 함께 질소산화물 제거 효율에 대해 고찰하였다. $MnO_x-CeO_2/TiO_2$ 촉매 내에서 $CeO_2$ 거동을 확인하기 위해 단일 조성의 $CeO_2$와의 차이점을 미세구조적으로 비교 분석하였다. $MnO_x-CeO_2/TiO_2$ 촉매가 졸겔법을 통해 제조되었으며 낮은 열적 특성으로 인해 평균 $285{\mu}m$ 정도의 큰 입도를 가진 단일 $CeO_2$와는 달리 Ti 지지체와 함께 합성된 촉매의 경우 130 nm 정도로 줄어들었음을 확인하였다. 투과 전자 현경을 이용한 EDS mapping를 통해 Ce-Ti의 강한 interaction이 nano-sized powder 제조의 원인인 것으로 확인하였다. 조촉매 첨가로 인해 $MnO_x/TiO_2$ 촉매에 비해 저온영역에서 20 % 이상의 효율 향상이 있었으며 이는 3성분계 촉매 내에서 $CeO_2$가 나노 사이즈로 잘 분산됨에 따라 촉매 반응에 필요한 산소이온의 교환이 활발히 일어날 수 있었기 때문이다.