• Title/Summary/Keyword: Thermal and dielectric properties

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Study on the Nonlinear Characteristic Effects of Dielectric on Warpage of Flip Chip BGA Substrate

  • Cho, Seunghyun
    • Journal of the Microelectronics and Packaging Society
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    • v.20 no.2
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    • pp.33-38
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    • 2013
  • In this study, both a finite element analysis and an experimental analysis are executed to investigate the mechanical characteristics of dielectric material effects on warpage. Also, viscoelastic material properties are measured by DMA and are considered in warpage simulation. A finite element analysis is done by using both thermal elastic analysis and a thermo-viscoelastic analysis to predict the nonlinear effects. For experimental study, specimens warpage of non-symmetric structure with body size of $22.5{\times}22.5$ mm, $37.5{\times}37.5$ mm and $42.5{\times}42.5$ mm are measured under the reflow temperature condition. From the analysis results, experimental warpage is not similar to FEA results using thermal elastic analysis but similar to FEA results using thermo-viscoelastic analysis. Also, its effect on substrate warpage is increased as core thickness is decreased and body size is getting larger. These FEA and the experimental results show that the nonlinear characteristics of dielectric material play an important role on substrate warpage. Therefore, it is strongly recommended that non-linear behavior characteristics of a dielectric material should be considered to control warpage of FCBGA substrate under conditions of geometry, structure and manufacturing process and so on.

A Study on the Dielectric Properties of EVA/Carbon Black Composites (EVA/카본블랙 복합체의 유전특성에 관한 연구)

  • Lee, K.Y.;Yang, J.S.;Lee, K.W.;Choi, Y.S.;Park, D.H.
    • Proceedings of the KIEE Conference
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    • 2005.07c
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    • pp.1893-1895
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    • 2005
  • To measure electrical properties of semiconducting materials in power cable, we have investigated dielectric properties of EVA showed by changing the content of carbon black. The specimen was primarily kneaded in material samples of pellet form for 5 minutes on rollers ringing between $70[^{\circ}C]$ and $100[^{\circ}C]$. Then that was produced as sheets after pressing for 20 minutes at $180[^{\circ}C]$ with a pressure of 200[kg/cm]. The contents of conductive carbon black were 20, 30 and 40(wt%), respectively The dielectric properties of specimens were measured by dielectric thermal analyzer (CONCEPT 40, NOVOCONTROL). Measuring frequencies were 10, 60, 100, 1000, 10000, 100000, 1000000(Hz) and measuring temperatures were -40, -20, 20, $90[^{\circ}C]$. From above experimental result, permittivity was increased, while $tan{\delta}$ was decreased according to an increment of the content of carbon black.

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Thermal stabilityof fluorine doped silicon oxide films

  • Lee, Seog-Heong;Yoo, Jae-Yoon;Park, Jong-Wan
    • Journal of Korean Vacuum Science & Technology
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    • v.2 no.1
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    • pp.25-31
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    • 1998
  • The reliability of fluorine doped silicon oxide (SiOF) films for intermetal dielectrics in multilevel interconnections of ultra-large scale integrated circuits (ULSIs) is investigated. SiOF films were deposited by electron cyclotron resonance plasma-enhanced chemical vapor deposition (ECRPECVD) using H-free source gases, i.e., SiF4 and O2. The effect of post plasma treatment on the moisture absorption and dielectric properties of SiOF films was carried out I terms of air exposure time, The reliability test of Cu/TiN/SiOF/Fi specimen was carried out in terms of temperature by rapid thermal annealing (RTA) in N2 ambient. After O2 plasma treatment,, no appreciable peak directly related to moisture absorption was detected. The capacitance-voltage (C-V) characteristics of the O2 plasma treated SiOF film showed that the film remained to hold the sound dielectric properties even after boiling treatment. The Cu/TiN/SiOF/Si system was found to be reliable up to $600^{\circ}C$.

Estimation of Electric Properties of Insulating Silicone Rubbers Added Reinforcing Fillers (보강성 충전제를 첨가한 절연용 실리콘 고무의 전기 특성 평가)

  • Lee, Sung-Ill
    • Elastomers and Composites
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    • v.32 no.5
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    • pp.309-317
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    • 1997
  • Estimation of the dielectric properties of insulating silicone rubbers added reinforcing fillers $(SiO_2,\;0{\sim}140phr)$ are very important to investigate the polymer structure. The characteristies of the dielectric absorption in insulating silicone rubbers were studied in the frequency range from 30Hz to 1MHz at the temperature range from $0{\sim}170^{\circ}C$. In the case of non-filled specimen, the dielectric loss is due to the syloxane which is the main chain of silicone rubber at the low temperature below $50^{\circ}C$ and the frequency at 330Hz, and is due to methyl and vinyl radical over the frequency of 1MHz. It is confirmed that the methyl radical or the vinyl radical becomes thermal oxidation at the high temperature over $100^{\circ}C$ and then the dielectric disperssing owing to the carboxyl radical Is appeared. In the case of filled specimen, the dielectric constant is in creased with the additives of reinforcing fillers due to the effect of interfacial polarization explained by MWS(Maxwell-Wagner-Sillars)'s law. The dielectric loss is decreased by the disturbance of reinforcing fillers that is permeated between networks.

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Synthesis and Characterization of Cordierite Glass-Ceramics for Low Firing Temperature Substrate; (II) Properties of Cordierite Glass-Ceramics Containing CeO2 (저온소결 세라믹기판용 Cordierite계 결정화유리의 합성 및 특성조사에 관한 연구;(II) $CeO_2$를 첨가한 Cordierite계 결정화유리의 특성)

  • 이근헌;김병호;임대순;정재현
    • Journal of the Korean Ceramic Society
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    • v.29 no.10
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    • pp.827-835
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    • 1992
  • The effects of CeO2 on the properties of cordierite-based glass-ceramics and its applicability to low firing temperature substrate were examined. Glass-ceramics were prepared by sintering the glass powder compacts at 900~100$0^{\circ}C$ for 3 h. Density, bending strength, dielectric constant and thermal expansion coefficient of the glass-ceramics were measured as functions of CeO2 contents and sintering temperatures. By adding CeO2, dense glass-ceramics were obtained below 100$0^{\circ}C$. dielectric constant and bending strength were more dependent on the porosity of glass-ceramics containing 5 wt% CeO2, sintered at 100$0^{\circ}C$ for 3 h, were as follows; relative density is 95.3%, bending strength is 178$\pm$11 MPa, dielectric constant is 4.98$\pm$0.20 (at 1 MHz) and thermal expansion coefficient is 33.7$\times$10-7/$^{\circ}C$. Therefore, the glass-ceramics containing 5 wt% CeO2 appeared to be suitable for low firing temperature substrate of electronic devices.

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Highly filled AIN/epoxy composites for microelectronic encapsulation (반도체 봉지용 고충진 AIN/Epoxy 복합재료)

  • 배종우;김원호;황영훈
    • Proceedings of the Korean Society For Composite Materials Conference
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    • 2000.04a
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    • pp.131-134
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    • 2000
  • Increased temperature adversely affects the reliability of a device. So, package material should have high thermal diffusion, i.e., high thermal conductivity. And, there are several other physical properties of polymeric materials that are important to microelectronics packaging, some of which are a low dielectric constant, a low coefficient of thermal expansion (CTE), and a high flexural strength. In this study, to get practical maximum packing fraction of AIN (granular type) filled EMC, the properties such as the spiral flow, thermal conductivity, CTE, and water resistance of AIN-filled EMC (65-vol%) were evaluated according to the size of AIN and the filler-size distribution. Also, physical properties of AIN filled EMC above 65-vol% were evaluated according to increasing AIN content at the point of maximum packing fraction (highly loading condition). The high loading conditions of EMC were set $D_L/D_S$=12 and $X_S$=0.25 like as filler of sphere shape and the AIN filled EMC in this conditions can be obtained satisfactory fluidity up to 70-vol%. As a result, the AIN filled EMC (70-vol%) at high loading condition showed improved thermal conductivity (about 6 W/m-K), dielectric constant (2.0~3.0), CTE(less than 14 ppm/$^{\circ}C$) and water resistance. So, the AIN filled EMC (70-vol%) at high loading condition meets the requirement fur advanced microelectronic packaging materials.

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Solventless UV Curable Material for Low Cost System (저에너지 UV 경화형 무용제 소재 개발)

  • KIM, KWANGIN;LEE, JUHEON;LEE, HYUNJU;HAN, HAKSOO
    • Transactions of the Korean hydrogen and new energy society
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    • v.28 no.1
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    • pp.77-84
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    • 2017
  • In this study, Poly-urethane acrylate (PUA) was synthesized by the reaction between Polycaprolactonetriol (PCLT) and Isophorone dissocyanate (IPDI) and hybridized with inorganic materials. Tetraethylortho silicate (TEOS) and nano clay (Closite 20A) were used as inorganic particles. For the hybridization of TEOS with PUA, sol-gel method is used, in which TEOS is made into spherical particle in the firsthand. In the case of Nano clay, hybridization is carried out through the dispersion as Nano clay has a layered structure. The solution of PUA hybrid was made into a film after UV curing and its thermo and electrical properties were measured. The experimental analysis and result demonstrate that the PUA hybrid shows an improved thermal properties and lower dielectric constant than that of the non-hybrid PUA. The trend of improved properties was different depending on structure of inorganic materials.

Fabrication and characteristics of PZT ferroelectric thin films by Sol-Gel processing and rapid thermal annealing (Sol-gel법과 급속 열처리에 의한 PZT 강유전 박막의 제작과 그 특성)

  • 백동수;최형욱;김준한;신현용;김규수;박창엽
    • Electrical & Electronic Materials
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    • v.7 no.5
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    • pp.369-375
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    • 1994
  • In this study, ferroelectric thin films of PZT with different Zr/Ti ratio were prepared by sol-get processing and annealed by rapid thermal annealing at >$500^{\circ}C$>$-700^{\circ}C$ for 10 sec. -1 min. Structures of the annealed films were examined by X-ray diffraction and SEM. Thin films of PZT with perovskite structure have been obtained by annealing at >$600^{\circ}C$ or above and for 20 seconds or longer. Maximum remnant polarization of 10.24.mu.C/cm$^{2}$ and minimum coercive field of 20.06 kV/cm were obtained from the 56/44 and 65/35 Zr/Ti composition films, respectively. Dielectric constant, .epsilon.$_{r}$ of 500-1300 and dielectric loss, tan .delta., of 0.01-0.035 were obtained from the films.s.

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Enhancement of Dielectric Properties of Polyamide Enamel Insulation in High Voltage Apparatuses Used in Medical Electronics by Adding Nano Composites of SiO2 and Al2O3 Fillers

  • Biju, A.C.;Victoire, T. Aruldoss Albert;Selvaraj, D. Edison
    • Journal of Electrical Engineering and Technology
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    • v.10 no.4
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    • pp.1712-1719
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    • 2015
  • In recent days, there was a significant development on the electrical, thermal, mechanical, physical, chemical, magnetic and optical properties of the polyamide enamel, varnish and other insulating materials by the addition of nano fillers to it. Enamel was used in High Voltage Apparatuses used in Medical Electronics as insulation. Insulating materials determine the life time of the electrical apparatuses. The life time of the insulating materials was improved by the addition of nano fillers to it. Hence the life time of the electrical apparatuses was improved by the mixing of nano fillers to the enamel. In this research, the basic dielectric properties of the enamel and enamel mixed with nano composites of silica and alumina were analyzed and compared with each other. The addition of nano fillers has improved the quality factor and capacitance of the enamel. It was also observed that the addition of nano fillers has reduced the dissipation factor and dielectric losses of the enamel. Heat produced by the dielectric losses was also reduced by adding nano fillers to it.