• 제목/요약/키워드: Textured substrate

검색결과 113건 처리시간 0.022초

양축 정렬된 니켈기판의 표면 산화반응 연구 (A Study on the Surface Oxidation Behavior of Cube-textured Nickel Substrate)

  • 안지현;김병주;김재근;김호진;홍계원;이희균;유재무
    • Progress in Superconductivity
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    • 제7권1호
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    • pp.58-63
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    • 2005
  • We investigated the surface oxidation behavior of cube-textured polycrystalline nickel at various oxidation conditions. Cube-textured NiO film was formed on a cube-textured polycrystalline nickel regardless of oxidation conditions but different growth behavior of NiO crystals was observed depending on the oxidation conditions. The introduction of water vapor into $O_2$ did not affect the texture evolution, but rough and porous microstructure was developed. Microstructure of NiO film tends to be denser as the oxygen partial pressure increases. It is interesting that (111) peak of theta - two theta diffraction pattern started to get stronger in air atmosphere and (111) plane became the major texture in the substrate oxidized in high purity argon gas. Small amount of high index crystallographic plane NiO peak crystal was observed when $N_{2}O$ was used as an oxidant while only (200) plane crystal was formed in dry $O_2$ atmosphere. Flat and smooth surface was changed into rough faceted one when ramping rate to oxidation temperature was faster. The grain size of NiO was decreased when the oxygen partial pressure was low. It was also observed that the modification of nickel surface suppressed the development of (200) texture.

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분말법과 주조법으로 제조한 coated conductor용 Ni 기판 개발 (Fabrication of textured Ni substrates for coated conductor prepared by powder metallurgy and plasma arc melting method)

  • 임준형;김정호;김규태;장석헌;주진호;나완수;홍계원;지봉기;김찬중
    • Progress in Superconductivity
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    • 제5권1호
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    • pp.70-74
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    • 2003
  • We fabricated cube textured Ni substrate for YBCO coated conductor and evaluated the effects of processing parameters on microstructural evolution and texture formation. Ni-rods as an initial specimen were prepared by two different methods, i.e., powder metallurgy(PM) and plasma arc melting(PAM). Subsequently, the rods were cold rolled to 100 $\mu\textrm{m}$ thick substrate and annealed at temperatures of $700∼1200^{\circ}C$. The texture of the substrate was characterized by pole-figure. It was observed that the texture of substrate made by P/M did not significantly varied with annealing temperature of 600∼$l100^{\circ}C$ and the full-width at half-maximums (FWHM) of both in-plane and out-of-plane were 9$^{\circ}$$10^{\circ}$. On the other hand, the texture of substrate made by PAM was more dependent on the annealing temperature and the corresponding values were $9^{\circ}$$13^{\circ}$ at the temperature range. In addition, recrystallization twin texture, (221)<221>, was formed as the temperature increased further. OM profiles showed that the grain size of substrate made by P/M was smaller than that made by PAM and this difference was correlated to the microstructure of initial specimens.

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2축 정렬된 Ni 선재 위에 MOCVD법에 의한 NiO의 조직 및 표면 분석 (Texture and surface analysis of NiO prepared on biaxially textured Ni substrates by MOCVD method)

  • 선종원;김형섭;지봉기;박해웅;홍계원;박순동;정충환;전병혁;김찬중
    • 한국초전도저온공학회:학술대회논문집
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    • 한국초전도저온공학회 2002년도 학술대회 논문집
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    • pp.119-122
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    • 2002
  • The NiO buffer layers for YBCO coated conductor were prepared on textured Ni substrates by MOCVD method and the degree of texturizing and the surface roughness were analyzed X-ray pole figure and AFM and SEM. Processing variables were oxygen partial pressure and substrate temperature. (200) textured NiO layer was formed at 450~$470^{\circ}C$ and oxygen partial pressure of 1.67 Torr. Out-of-plane($\omega$-scan) and in-plane($\Phi$-scan) texture were $10.34^{\circ}$ and $10.00^{\circ}$ respectively. The surface roughness estimated by atomic force microscopy was in the range of 3.1~4.6 nm.

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Influence of Surface Texturing on the Electrical and Optical Properties of Aluminum Doped Zinc Oxide Thin Films

  • Lee, Jaeh-Yeong;Shim, Joong-Pyo;Jung, Hak-Kee
    • Journal of information and communication convergence engineering
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    • 제9권4호
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    • pp.461-465
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    • 2011
  • An aluminum doped zinc oxide (AZO) film for front contacts of thin film solar cells, in this work, were deposited by r.f. magnetron sputtering, and then etched in diluted hydrochloric acid solution for different times. Effects of surface texturing on the electro-optical properties of AZO films were investigated. Also, to clarify the light trapping of textured AZO film, amorphous silicon thin film solar cells were fabricated on the textured AZO/glass substrate and the performance of solar cells were studied. After texturing, the spectral haze at the visible range of 400 ~750 nm increased substantially with the etching time, without a change in the resistivity. The conversion efficiency of amorphous Si solar cells with textured AZO film as a front electrode was improved by the increase of short-circuit current density ($J_{sc}$), compared to cell with flat AZO films.

랜덤 택스쳐 필름을 이용한 유기 발광 소자의 광추출 효율 향상에 관한 연구 (A Study on the Improvement of Light-Extraction Efficiency of Organic Light-Emitting Diodes with a Use of Random-Textured Film)

  • 김혜숙;황덕현;장경욱;김태완
    • 한국전기전자재료학회논문지
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    • 제28권7호
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    • pp.446-449
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    • 2015
  • An improvement of light-extraction efficiency of organic light-emitting diodes was studied by using random-textured films (RTF). Device was made in a structure of RTF/glass/ITO/TPD/$Alq_3$/LiF/Al. RTF mold was made by spreading PDMS solution on a sandpaper. By pressing this mold on the glass substrate pre-coated with ZPU material, the RTF was obtained. From this study, there was an improvement of external quantum efficiency by about 30% in the device with the random-textured film (RTF 40) compared to that of the reference one.

LED 효율 향상을 위한 Texture구조 AZO 박막의 제조와 광학적 특성분석 (Analysis on the Optical Properties and Fabrication of Textured AZO Thin Films for Increasing the Efficiency of LED)

  • 김경민;진은미;박춘배
    • 한국전기전자재료학회논문지
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    • 제19권10호
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    • pp.901-906
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    • 2006
  • The transparent conductive oxide(TCO) has been used in necessity as front electrode for increasing efficiency of LED. In our paper, aluminium-doped zinc oxide films(AZO), which has transparent conducting were prepared with RF magnetron sputtering system on glass substrate(corning 1737) and annealed at $400^{\circ}C$ for 2 hr in vacuum ambient and $600^{\circ}C$ for 2hr with $O_2$ ambient respectively. The smooth AZO films were etched in diluted HCL(0.5 %) to examine the surface properties, which in ambient post-annealing process. We confirmed that the electric, structural and optical properties of textured AZO thin films, which implemented using the methods of XRD, FWHM, AFM and Hall measurement. The properties of textured AZO thin films especially depended on the ambient post-annealing process. We presumed that the change of transmittances as R G B LED and the ambient post-annealing process will be increasing the efficiency of LED.

Characteristics of ZnO Thin Films Grown on p-type Si and Sapphire Substrate by Pulsed Laser Deposition

  • Lee, K. C.;Lee, Cheon
    • KIEE International Transactions on Electrophysics and Applications
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    • 제3C권6호
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    • pp.241-245
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    • 2003
  • ZnO thin films on (l00) p-type Si and sapphire substrates have been deposited by a pulsed laser deposition technique using an Nd:YAG laser with a wavelength of 266 nm. The influence of the deposition parameters such as oxygen pressure, substrate temperature and laser energy density on the properties of the grown films was studied. The experiments were performed for substrate temperatures in the range of 200∼50$0^{\circ}C$ and oxygen pressure in the range of 100∼700 sccm. All of the films grown in this experiment show strong c-axis orientation with (002) textured ZnO peak. With increasing substrate temperature, the FWHM (full width at half maximum) and surface roughness were decreased. In the case of using sapphire substrate, the intensity of PL spectra increased with increasing ambient oxygen flow rate. We investigated the structural and morphological properties of ZnO thin films using X-ray diffraction (XRD), scanning electron microscopy (SEM) and atomic force microscopy (AFM).