• 제목/요약/키워드: Tetravalent tin

검색결과 1건 처리시간 0.016초

전해도금에 의해 형성된 반도체 금속도금용 주석-납 합금피막의 첨가제 및 전해조건의 영향 (Effect of Additives and Plating Conditions on Sn-Pb Alloy Film of Semiconductor Formed by High Speed Electroplating)

  • 정강효;김병관;박상언;김만;장도연
    • 한국표면공학회지
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    • 제36권1호
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    • pp.34-41
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    • 2003
  • Effects of additives and plating conditions of high speed electroplating were investigated. The Sn content in electrodeposit was highly decreased with increasing current density from $10A/dm^2$ to $50A/dm^2$, and the current efficiency on the cathode was decreased. The carbon content in the electrodeposit was decreased with increasing current density from $10A/dm^2$ to $30A/dm^2$, however the carbon content was highly increased in the range of $40A/dm^2$$∼50A/dm^2$. The formation of tetravalent tin and stannic oxide sludge was prevented by the addition of gallic acid in the bath. The changing of Sn content in the electrodeposit is caused by the addition of gallic acid.