• Title/Summary/Keyword: Tess

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Recovery of phosphoric acid from the waste acids in semiconductor manufacturing process (반도체 제조공정에서 발생하는 혼산폐액으로부터 고순도 인산 회수)

  • Park, Sung-Kook;Roh, Yu-Mi;Lee, Sang-Gil;Kim, Ju-Yup;Shin, Chang-Hoon;Ahn, Jae-Woo
    • Proceedings of the Korean Institute of Resources Recycling Conference
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    • 2006.05a
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    • pp.90-94
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    • 2006
  • The waste solution discharged from the LCD manufacturing process contains acids like nitric, acetic and phosphoric acid and metal ions such as Al, Mo and other impurities. It is important to removal of impurities to tess than 1ppm in phosphoric acid to reuse as an etchant because the residual impurities even in sub-ppm concentration in semiconductor materials play a major role on the electronic properties. In this study, we have been clearly established that a mixed system of solvent extraction, diffusion dialysis and ion-exchange technique, which made individually the most of characteristics is developed to commercialize in an efficient system for recovering the high-purity phosphoric acid. By applying vacuum evaporation, the yield of the process are almost 99% removal of nitric acid and acetic acid was achieved. And by applying the solvent extraction method with tri-octyl phosphate(TOP) as an extractant, the removal of acetic and nitric acid from the acid mixture was achieved effectively at the ratio O/A=1/3 with four stages and the stripping of nitric acid from organic phase is attained at a ration of O/A=1 with six stages by distilled water. About 97% and 76% removal of Al and Mo were achieved by diffusion dialysis. Essentially complete less than 1ppm removal of Al, Mo by using ion exchange ion resin and purification of the phosphoric acid was obtain.

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