• Journal of the Korean Institute of Telematics and Electronics
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• v.27 no.11
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• pp.77-82
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• 1990

The temperature and the composition dependence of the dielectric properties of the solid solution materials in the system $xBa(Zn_{1/3}Nb_{2/3})O_{3}\[BZN]-(1-x)\Sr(Zn_{1/3}Nb{2/3)O_{3}\[SZN]$ at microwave frequency was studied. The dielectric constant and unloaded Q were $40.5{\pm}0.5,5980{\pm}100$ respectively for BZN at 10 GHz and $36.9{\pm}0.5,2700{\pm}100$ for SZN at 10.2GHz. The temperature coefficient of the resonant frequency was $+27.5ppm/{\circ}C$ for BZN and $-39.1ppm/{\circ}C$ for SZN. The results also showed that 0.3 BZN-0.7 SZN is the most temperature-stable composition among xBZN-(1-x) SZN solid solutions. In this case, the dielectric constant, the unloaded Q and $\tau_{f}$ at 9.8GHz were $41.5{\pm}0.2,2920{\pm}100$ and $-3.5ppm/{\circ}C$, respectively.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.8 no.3
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• pp.478-486
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• 1998

$CaTiO_3-x(La_{1/3}Nd_{1/3}TiO_3\;(0\le \textrm x\le0.8)$ system was prepared by reaction of $CaCO_3,\;LaO_3,\;Nd_2CO_3$ and ,TEX>$TiO_2$ mixture at 1673 K, which can be applied for microwave dielectric ceramic materials. The lattice parameters of(1-x))$CaTiO_3-x(La_{1/3}Nd_{1/3}TiO_3\;(0\le \textrm x\le0.8)$ system increased with the increase of x. Its structure was investigated by Rietveld profile-analysis of XRD in detail. Cations $ La^{3+}$ and Nd^{3+}$ were located at the $Ca^{2+}$ site in the range of $0\le \textrm x\le0.8$. crystal structure in $;(0\le \textrm x\le0.6)$ maintained space group Pnma with CaTiO_3 structure. The tiled and distorted $TiO_6$ was gradually released with the increase of x in $0\le \textrm x\le0.6$ .The structure was changed to a new space group of $Pmn2_1$ at the x value of 0.8. The relative dielectric constant $(\epsilon_r)$ of $(1-x)CaTiO_3-x(La_{1/3} Nd_{1/3})TiO_3$ ($(0\le \textrm x\le0.8)$) system was exponentially decreased by with the increased of x. The temperature coefficient of resonant frequency $(\tau_f)$ decreased with the increase of x in $0\le \textrm x\le0.6$ and then increased again at x=0.8 due to the change of crystal structure. The value of Q$\cdot f_o$ was 13800 (GHz) at x=0.2 and was very low under 2000 (GHz) in 0.4$\leq$x$\leq$0.8.