• 한국정보통신학회논문지
• /
• 제15권8호
• /
• pp.1791-1796
• /
• 2011

가우스 광분포를 가지는 KrF 엑시머 레이저와 위상마스크를 이용해 3dB 파장 선폭이 0.7 nm인 단주기 광섬유 격자(Fiber Bragg Grating)가 제작되었고, 이 격자의 파장에 따른 삽입 손실이 단일파장 광원과 cutback방식을 이용해 측정되었다. 이 격자의 온도 의존성을 확인하기 위해 -10 $^{\circ}C$ ~ 70 $^{\circ}C$ 범위에서 중심 파장의 변화를 측정하였는데 0.01 nm/$^{\circ}C$을 얻었으며 이 값은 온도 변화 방향과 무관하였다. 진폭마스크를 이용해 3 dB 선폭이 14.22 nm인 장주기 격자도 제작되었으며 이 경우는 같은 온도 범위에서 0.044 nm/$^{\circ}C$로 단주기 격자에 비해 온도 의존성이 4배 이상 컸다. 장주기 격자는 광섬유 코팅의 존재 여부도 온도 변화에 큰 영향을 미쳤다.

• 한국소음진동공학회:학술대회논문집
• /
• 한국소음진동공학회 2009년도 추계학술대회 논문집
• /
• pp.770-771
• /
• 2009

• 한국소음진동공학회:학술대회논문집
• /
• 한국소음진동공학회 2009년도 춘계학술대회 논문집
• /
• pp.168-169
• /
• 2009

• 한국소음진동공학회:학술대회논문집
• /
• 한국소음진동공학회 2012년도 추계학술대회 논문집
• /
• pp.669-670
• /
• 2012

• 대한전기학회:학술대회논문집
• /
• 대한전기학회 2002년도 하계학술대회 논문집 C
• /
• pp.1463-1466
• /
• 2002

In this paper, the thermal analysis and dielectric/insulation properties were investigated with considering the temperature depenence Using the sheet of semi-conductor/XLPE came from 22 kV power cables, the dielectric/insulation properties and temperature dependence were measured under 1kHz. According to the results we can verify that only semi-conductor sheet changed linearly, and with the unstable results. the dielectric/insulation properties of the semi-conductor/XLPE sheet show the highest value in the range of 40 $^{\circ}C$ and 50 $^{\circ}C$ and are rely on XLPE rather than semi-conductor in terms of the temperature.

• 전기학회논문지
• /
• 제57권12호
• /
• pp.2276-2280
• /
• 2008

In this paper, we present thermal dependancy of LED package element by changing temperature of MCPCB for design high efficiency LED lamp, and confirmed influence of LED chip against temperature with analysis of thermal resistance and thermal capacitance. As increasing temperature, WPOs were decreased from 25 to 22.5 [%] and optical power were also decreased. that is decreased reason of optical power that forward voltage was declined by decrease of energy bandgap. Therefore optical power by temperature of MCPCB should consider to design lamp for street light and security light. Moreover, compensation from declined optical efficiency is demanded when LED package is composed. Also, thermal resistances from chip to metal PCB were decreased from 12.18 to 10.8[$^{\circ}C/W$] by changing temperature. Among the thermal resistances, the thermal resistance form chip to die attachment was decreased from 2.87 to 2.5[$^{\circ}C/W$] and was decreased 0.72[$^{\circ}C/W$] in Heat Slug by chaning temperature. Therefore, because of thermal resistance gap in chip and heat slug, reliability and endurance of high power LED affect by increasing non-radiative recombination in chip from heat.

• Elastomers and Composites
• /
• 제22권2호
• /
• pp.109-120
• /
• 1987

In this study, as one of the developing ways of the functional elastomer, improvement of the functionality of CB-BR was attemped through stabilization. At first the stabilization effect of CB-BR and the concentration dependancy in CB-BR were determined. Then, triazine thiol derivative(BPTT) was synthesized by reacting p-aminodiphenylamine with cyanuric chloride. Further the functional mechanism and the effects of the antioxidants were investigated using BPTT together with other various antioxidants in liquid and solid states. The results obtained are as follows: 1) The aging of CB-BR depended on the concentration and temperature. Thus, at a low temperature of $50^{\circ}C$, the aging proceeded with gel formation; at high temperature above $100^{\circ}C$ and in above 4wt% concentration, the aging occured by the formation of gel. And in concentrations below that, the aging proceeds with a decomposition caused by oxygen attacked to elastomer molecules. 2) The effect of antioxidation of CB-BR in the liquid state was at it's best when the MBIZ and BPTT were used at $110^{\circ}C$, 4hrs after the oxidation. 3) The effect of antioxidation of CB-BR in the solid state was the best choice the simultaneous use of NDBC and BPTT at $50^{\circ}C$, 30days after the oxidation.

• 대한전기학회:학술대회논문집
• /
• 대한전기학회 1994년도 하계학술대회 논문집 C
• /
• pp.1422-1424
• /
• 1994

This paper deals with piezoresistive humidity sensor using polycrystalline silicon (Poly-Si ) with membrane in sensors of semiconductor. Poly-Si piezoresistors which have no temperature dependancy are deposited on silicon wafer, membrane is formed with micromachining technology, then polyimide is formed as a hygroscopic layer. Whereas the principle of conventional humidify sensors are based on the change in electrical properties of the material, the humidity induced volume change of a polyimide layer leads to a deformation of a silicon membrane in this case. This deformation is transformed into an output voltage by Poly-Si piezoresistive. Wheatstone bridge. Fabricated piezoresistive humidity sensors showed good linearity, response time, and long term stability.

• 대한전기학회:학술대회논문집
• /
• 대한전기학회 1990년도 하계학술대회 논문집
• /
• pp.215-220
• /
• 1990

A.C. impedance properties of $RuO_2$ based thick film resistors which having different resistivity value (DuPont 1721 : $100{\Omega}$/ sq., 1741 : $10K{\Omega}$/sq.) were investigated using by impedance analyzer. In case of lower resistivity 1721 system, the complex impedance was composed nearly R component for all speciman sintered at above $600^{\circ}C$, and the frequency dependancy on impedance was not affected very much up to 5MHz and again gradually increase with increasing the frequency. In case of higher resistivity 1741 resistor system, impedance properties were very depandant on sintering temperature. When sintering temperature was $600^{\circ}C$, the complex impedance plot shows a vertical line, which correspond to lone capacitance equivalant circuit, and the impedance linearly decreased with increasing frequency. In case of speciman sintered at $700-900^{\circ}C$, the complex impedance plot shows semi-circular are correspond to a lumped RC combination, and the impedance shows constant value to 5MHz, again decreased with increasing frequency. But the complex impedance behavior of speciman sintered at $1000^{\circ}C$ was shows the equivalent circuit correspont to parallel combined LCR component, and the impedance was not varied with frequency.

• 한국전산구조공학회논문집
• /
• 제27권5호
• /
• pp.385-392
• /
• 2014

면진장치는 지진력을 감소시키기 위하여 사용되어왔다. 원자력발전소에 면진장치가 적용된다면, 운영기간동안 구조물과 기기들은 동일한 내구성 및 성능이 확보되어야 한다. 본 연구에서는 면진된 원전의 지진에 대한 안전성을 확보하기 위하여 면진구조물의 장기거동을 해석적으로 분석하였다. 경년열화에 의한 면진장치 특성을 분석하였고, 다른 온도환경에서 면진장치의 경년열화에 의한 구조물의 지진응답을 분석하였다. 해석결과에 의하면 면진장치의 경년열화에 의하여 면진구조물의 고유진동수는 증가하였다. 그러나 면진 구조물의 최대가속도와 최대변위는 온도에 따라 크게 변하지 않았다. 면진장치의 열화에 의하여 구조물의 손상은 발생하지 않았지만 목표진동수 영역에서 스펙트럼가속도는 온도에 따라 증가하였다. 따라서 면진구조물에서 면진장치는 온도에 따른 지진응답의 증가를 고려하여 설치 및 제작해야 할 것으로 판단된다.