• Journal of Welding and Joining
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• 제33권2호
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• pp.47-55
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• 2015

With using adaptive control of the resistance spot welding machine, the advantage on electrode life time for galvanized steels has been addressed. This study was aimed to evaluate the electrode life time of galvanized steels with applying the constant current control and the adaptive control resistance spot welding process for a comparison purpose. The growth in diameter of electrode face was similar for both the constant current and the adaptive control up to 2000 welds. The button diameter was decreased with weld numbers, however, sudden increase in button diameter with use of the adaptive control after 1500 welds was observed. The peak load was continuously decreased with increasing number of welds for both the constant current and the adaptive control. The current compensation during a weld was observed with using the adaptive control after 1800 welds since the ${\beta}$-peak on dynamic resistance curve was detected at later weld time. The current compensation with adaptive control during resistance spot welding enhanced the nugget diameter at the faying interface of steel sheets and improved the penetration to thinner steel sheet.

• 보건행정학회지
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• 제18권4호
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• pp.85-110
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• 2008

In this study, we explore the long-term demand forecasting of high-price medical equipments based on logistic and Bass diffusion model. We analyze the specific pattern of each equipment's diffusion curve by interpreting the parameter estimates of Bass diffusion model. Our findings are as follows. First, ultrasonic imaging system, CT are in the stage of maturity and so, the future demands of them are not too large. Second, medical image processing unit is between growth stage and maturity stage and so, the demand is expected to increase considerably for two or three years. Third, MRI is in the stage of take-off and Mammmography X-ray system is in the stage of maturity but, estimates of the potential number of adopters based on logistic model is considerably different to that based on Bass diffusion model. It means that additional data for these two equipments should be collected and analyzed to obtain the reliable estimates of their demands. Fourth, medical image processing unit have the largest q value. It means that the word-of-mouth effect is important in the diffusion of this equipment. Fifth, for MRI and Ultrasonic system, q/p values have the relatively large value. It means that collective power has an important role in adopting these two equipments.

• 대한기계학회논문집B
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• 제36권8호
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• pp.857-864
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• 2012

복사열손실을 받는 확산화염의 선형 안정성 해석을 수행하여 복사강도와 Damkohler 수에 대한 화염 불안정이 나타나는 조건을 확인하였다. 대향류 유동장을 모델로 하여 Lewis 수는 1로 가정하였다. 반응속도 제한에 의한 소염근처에서 교란의 증가율은 실수의 고유값을 가지며 안정한계는 정상상태 소염조건과 정확하게 일치한다. 반면에 복사 열손실에 의한 소염 영역 근처에서 증가율의 고유값은 복소수이며 정상상태 소염 전에 맥동 불안정성이 예측된다. 진동하는 화염온도가 양의 실수 고유값을 갖는 정상상태 화염온도 보다 클 경우에만 한계 순환 안정 특성이 나타난다. 만약 그 온도보다 작게 되면 화염은 회복되지 못하고 소염된다. 넓은 복사강도 범위에 대하여 복사 열손실에 의한 불안정성의 안정한계 곡선을 도시하였다.

• 센서학회지
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• 제17권6호
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• pp.437-446
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• 2008

Single crystalline ${ZnIn_2}{Se_4}$ layers were grown on thoroughly etched semi-insulating GaAs (100) substrate at $400^{\circ}C$ with hot wall epitaxy (HWE) system by evaporating ${ZnIn_2}{Se_4}$ source at $630^{\circ}C$. The crystalline structure of the single crystalline thick films was investigated by the photoluminescence (PL) and Double crystalline X-ray rocking curve (DCRC). The carrier density and mobility of ${ZnIn_2}{Se_4}$ single crystalline thick films measured from Hall effect by van der Pauw method are $9.41{\times}10^{16}cm^{-3}$ and $292cm^2/V{\cdot}s$ at 293 K, respectively. The temperature dependence of the energy band gap of the ${ZnIn_2}{Se_4}$ obtained from the absorption spectra was well described by the Varshni's relation, $E_g(T)$=1.8622 eV-$(5.23{\times}10^{-4}eV/K)T^2$/(T+775.5 K). After the as-grown ${ZnIn_2}{Se_4}$ single crystalline thick films was annealed in Zn-, Se-, and In-atmospheres, the origin of point defects of ${ZnIn_2}{Se_4}$ single crystalline thick films has been investigated by the photoluminescence (PL) at 10 K. The native defects of $V_{Zn}$, $V_{Se}$, $Zn_{int}$, and $Se_{int}$ obtained by PL measurements were classified as a donors or acceptors type. And we concluded that the heat-treatment in the Se-atmosphere converted ${ZnIn_2}{Se_4}$ single crystalline thick films to an optical p-type. Also, we confirmed that In in ${ZnIn_2}{Se_4}$/GaAs did not form the native defects because In in ${ZnIn_2}{Se_4}$ single crystalline thick films existed in the form of stable bonds.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2009년도 제38회 동계학술대회 초록집
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• pp.174-174
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• 2010

Gallium Nitride(GaN) attracts great attention due to their wide band gap energy (3.4eV), high thermal stability to the solid state lighting devices like LED, Laser diode, UV photo detector, spintronic devices, solar cells, sensors etc. Recently, researchers are interested in synthesis of polycrystalline and amorphous GaN which has also attracted towards optoelectronic device applications significantly. One of the alternatives to deposit GaN at low temperature is to use Single Source Molecular Percursor (SSP) which provides preformed Ga-N bonding. Moreover, our group succeeds in hybridization of SSP synthesized GaN with Single wall carbon nanotube which could be applicable in field emitting devices, hybrid LEDs and sensors. In this work, the GaN thin films were deposited on c-axis oriented sapphire substrate by MBE (Molecular Beam Epitaxy) using novel single source precursor of dimethyl gallium azido-tert-butylamine($Me_2Ga(N_3)NH_2C(CH_3)_3$) with additional source of ammonia. The surface morphology, structural and optical properties of GaN thin films were analyzed for the deposition in the temperature range of $600^{\circ}C$ to $750^{\circ}C$. Electrical properties of deposited thin films were carried out by four point probe technique and home made Hall effect measurement. The effect of ammonia on the crystallinity, microstructure and optical properties of as-deposited thin films are discussed briefly. The crystalline quality of GaN thin film was improved with substrate temperature as indicated by XRD rocking curve measurement. Photoluminescence measurement shows broad emission around 350nm-650nm which could be related to impurities or defects.

• 한국토양비료학회지
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• 제44권5호
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• pp.836-840
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• 2011

Cellulase와 xylanase 분비능이 우수한 고온성 부숙촉진 세균을 분리하기 위하여 진주 인근지역의 새송이버섯 재배농장으로부터 새송이버섯 수확 후 배지를 수집하였다. 새송이버섯 수확 후 배지로부터 23종의 균주를 분리하였으며 이 중 cellulase와 xylanase을 동시에 분비하는 균주를 최종 선발하여 SJ21으로 명명하였다. Bacillus ID kit와 VITEK 2 system를 이용하여 분리균 SJ21의 생리적 생화학적 특성을 조사한 결과 분리균 SJ21은 B. lincheniformis와 유사한 특징을 나타내었으며 16S rDNA 염기서열 분석결과에서는 B. subtilis와 99%의 상동성을 나타내었다. 이와 같은 결과를 종합하여 분리균 SJ21은 Bacillus sp. SJ21 로 동정되었다. 분리균이 분비하는 cellulase와 xylanase 활성은 분리균이 증식함에 따라 대수증식기 중반부터 급격히 증가하였고 정지기에 진입하면 효소활성이 더 이상증가하지 않는 것으로 나타났으며 xylanase 활성은 대수증식기 초기부터 지속적으로 증가하여 대수증식기 중반에 최대활성을 나타내었다.

• 한국표면공학회지
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• 제51권6호
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• pp.393-399
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• 2018

Formation behavior of aluminum anodic oxide (AAO) films on Al6061 alloy was studied in view of thickness, morphology and defects in the anodic films in 20 vol.% sulfuric acid solution at a constant current density of $40mA/cm^2$, using voltage-time curve, observation of anodized specimen colors and surface and cross-sectional morphologies of anodic films with anodization time. With increasing anodizing time, voltage for film formation increased exponentially after about 12 min and its increasing rate decreased after 25 min, followed by a rapid decrease of the voltage after about 28 min. Surface color of anodized specimen became darker with increasing anodizing time up to about 20 min, while it appeared to be brighter with increasing anodizing time after 20 min. The darkened and brightened surfaces with anodizing time are attributed to an increase in thickness of porous anodic oxide film and a chemical damage of the films due to heat generated by increased resistance of the film, respectively. Cross-sectional observation of AAO films revealed the formation of defects of crack shape at the metal/oxide interface after 15 min which prevents the growth of AAO films. Width and length of the crack-like defect increased with anodizing time up to 25 min of anodizing, and finally the outer part of AAO films was partly dissolved or detached after 30 min of anodizing, resulting in non-uniform surface structures of the AAO films.

• 대한금속재료학회지
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• 제46권8호
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• pp.495-505
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• 2008

With the high proportion of zinc coated steels in body-in-white assembly, newly developed surface roughness textured galvannealed steel sheets have been introduced. In this study, zinc coated and surface roughness textured steel sheets were welded by resistance spot welding to investigate its weldability including electrode wear test. Based on the results of tensile-shear test, nugget diameter changes, and electrode tip growth test, it was clear that both surface roughness textured steels (GA-T and GA-E) showed good weldability. Also, there was no large difference in weldability and electrode wear behavior between GA-T and GA-E steels which have different surface roughness morphology. An analysis of electrode degradation showed Fe and Zn penetration through the electrode tip surface at 2400 welds reached $55{\sim}60{\mu}m$ and $75{\sim}80{\mu}m$, respectively. Therefore, there is no significant effect of surface roughness morphology on spot weldability of surface roughness textured galvannealed steel sheets. However, slight difference in thickness of alloying layers existing on electrode tip was found between GA-T and GA-E steels.

• 한국결정성장학회지
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• 제16권2호
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• pp.82-87
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• 2006

붕규산염계 유리 프리트에 중금속이 다량 함유된 전기로 EAF dust(전기로 제강분진, 이하 더스트)를 $10{\sim}80wt%$ 범위로 첨가한 후 용융하여 유리 시편을 얻었다. 제조된 유리의 DTA분석 결과로부터 유리전이온도, $T_g$가 $550^{\circ}C$ 부근임을 확인하였고 이로부터 결정화에 필요한 열처리 조건을 $700^{\circ}C$/10 hr으로 정하였다. 더스트 첨가량이 70wt% 이상인 유리시편은 XRD 분석 결과 spinel 결정 피크만이 나타났으며, 결정화 시편의 경우, 더스트 첨가량이 40wt% 이상부터 spinel 결정이, 80wt% 부터는 spinet과 willemite 피크가 함께 검출되었다. XRD 분석으로는 결정상이 검출되지 않았던 조성의 유리시편에서도 aspect ratio=$0.7{\sim}1.0$인 수십 nm 크기의 결정상 존재가 SEM으로 확인되었고 결정화 시편에서도 더스트 함량이 l0wt%부터 결정상이 관찰되었다. 결정화 시편에서 관찰된 결정상은 그 형태와 분포가 첨가량에 따라 다양하고 비균일 하였으나 더스트 첨가량이 70wt%인 시편에서는 aspect ratio가 1에 가까운 6면체 형상을 나타내었다.

• 한국결정성장학회지
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• 제27권1호
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• pp.42-46
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• 2017

스컬용융법으로 $SrAl_2O_4$ : $Eu^{2+}$,$Dy^{3+}$ 형광체 합성을 하였으며, 합성한 형광체의 산화물 몰비는 $SrCO_3$ : $Al(OH)_3$ : $Eu_2O_3$ : $Dy_2O_3$= 1 : 2 : 0.015 : 0.02였다. 결정구조 및 표면 형상은 X-선 회절분석과 주사전자현미경으로 규명하였다. 합성한 $SrAl_2O_4$ : $Eu^{2+}$,$Dy^{3+}$의 광학적 특성인 여기, 발광 및 장잔광 특성의 심도 있는 연구를 위해 PL(photoluminescence) 분광계로 측정하였다. PL 측정을 통해 360 nm 영역에서 여기(excitation)되고, 300~420 nm의 파장까지 여기가 일어남을 확인하였다. 발광(emission)스펙트럼은 450~600 nm의 파장에서 폭넓은 스펙트럼을 보였으며, 530 nm에서 최대 발광파장을 나타내었다. $SrAl_2O_4$ : $Eu^{2+}$,$Dy^{3+}$ 형광체는 오랜 시간 동안 발광하는 장잔광 특성을 나타내었다.