• Title/Summary/Keyword: Te-rich $Sb_xTe_{1-x}$

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Synthesis and Characterization of Te-rich $Sb_xTe_{1-x}$ Nanowires and Nanotubes (Te이 과량 포함된 $Sb_xTe_{1-x}$ 나노와이어 및 나노튜브의 합성 및 분석)

  • Lee, Joon-Suk;No, Kwang-Soo;Jung, Soon-Won;Yoon, Sung-Min;Yu, Byoung-Gon
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2008.11a
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    • pp.423-423
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    • 2008
  • One dimensional (1D) nanostructures, including nanowires, nanorods, nanobelts, and nanotubes, have been the focus of current research on nanotechnology because of their fundamental significance in chemistry, physics, materials science and engineering, and potential applications in nanoelectronics. We have synthesized Te-rich $Sb_xTe_{1-x}$ nanowires and nanotubes via thermal evaporation method under vapor-solid mechanism. The physical morphology and chemical composition of the fabricated nanowires and nanotubes were investigated by scanning electron microscopy (SEM), transmission electron microscopy (TEM), and energy dispersive X-ray spectroscopy (EDX).

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The study for phase change properties of Te-rich AgInSbTe thin films (Te가 증가된 AgInSbTe 박막의 상변화 특성 연구)

  • Kim, Sung-Won;Lim, Woo-Sik;Lee, Hyun-Yong
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2007.06a
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    • pp.135-135
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    • 2007
  • AgInSbTe물질은 compact disc rewritable(CD-RW)와 rewritable digital versatile disc (DVD+RW)과 같은 상변화 기록매체에 널리 쓰여지고 있다. 본 논문에서는 기존 AgInSbTe조성에 Te가 증가되었을때 변화하는 상변화 특성에 대한 연구를 수행하기 위하여 ($Ag_{3.4}In_{3.7}Sb_{76.4}Te_{16.5})x(Te)1-x$의 조성 (x=1,0.9,0.8,0.7)의 벌크 및 박막시료를 제작하였고 열증착방식을 이용하여 200nm 두께의 박막을 형성하였다. 각 박막은 질소분위기에서 100-300도 범위에 1 시간동안 열처리 하였고 XRD와 UV-ViS-NIR Spectrophotometer룰 통해 각 조성의 구조 및 광학적 특성 분석을 살시하였다. 또한 as-deposited 박막에 대하여 4-point probe를 사용하여 면저항을 측정하였고 AFM (atom force microscopy)을 통해 표면분석을 실시하였다.

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Influence of Annealing Temperature on Structural and Thermoelectrical Properties of Bismuth-Telluride-Selenide Ternary Compound Thin Film

  • Kim, Youngmoon;Choi, Hyejin;Kim, Taehyeon;Cho, Mann-Ho
    • Proceedings of the Korean Vacuum Society Conference
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    • 2014.02a
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    • pp.304.2-304.2
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    • 2014
  • Chalcogenides (Te,Se) and pnictogens(Bi,Sb) materials have been widely investigated as thermoelectric materials. Especially, Bi2Te3 (Bismuth telluride) compound thermoelectric materials in thin film and nanowires are known to have the highest thermoelectric figure of merit ZT at room temperature. Currently, the thermoelectric material research is mostly driven in two directions: (1) enhancing the Seebeck coefficient, electrical conductivity using quantum confinement effects and (2) decreasing thermal conductivity using phonon scattering effect. Herein we demonstrated influence of annealing temperature on structural and thermoelectrical properties of Bismuth-telluride-selenide ternary compound thin film. Te-rich Bismuth-telluride-selenide ternary compound thin film prepared co-deposited by thermal evaporation techniques. After annealing treatment, co-deposited thin film was transformed amorphous phase to Bi2Te3-Bi2Te2Se1 polycrystalline thin film. In the experiment, to investigate the structural and thermoelectric characteristics of Bi2Te3-i2Te2Se1 films, we measured Rutherford Backscattering spectrometry (RBS), X-ray diffraction (XRD), Raman spectroscopy, Scanning eletron microscopy (SEM), Transmission electron microscopy (TEM), Seebeck coefficient measurement and Hall measurement. After annealing treatment, electrical conductivity and Seebeck coefficient was increased by defect states dominated by selenium vacant sites. These charged selenium vacancies behave as electron donors, resulting in carrier concentration was increased. Moreover, Thermal conductivity was significantly decreased because phonon scattering was enhanced through the grain boundary in Bi2Te3-Bi2Te2Se1 polycrystalline compound. As a result, The enhancement of thermoelectric figure-of-merit could be obtained by optimal annealing treatment.

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Magnetite and Scheelite-Bearing Skarns in Ulsan Mine, Korea (울산 광산의 철-텅그스텐 스카른화작용)

  • Choi, Seon-Gyu;Imai, Naoya
    • Economic and Environmental Geology
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    • v.26 no.1
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    • pp.41-54
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    • 1993
  • The Ulsan Fe-W deposit, which can be classified as a calcareous skarn deposit, is represented by ore pipe consisting principally of magnetite and lesser amounts of scheelite with minor sulphides, sulphosaits, arsenides, sulpharsenides, etc. At Ulsan mine, metasomatic processes of skarn growth may be divided broadly into two stages based on the paragenetic sequence of calc-silicate minerals and their chemical composition; early and late skarn stages. Early stage has started with the formation of highly calcic assemblages of wollastonite, diopsidic clinopyroxene and nearly pure grossular, which are followed by the formation of clinopyroxenes with salite to ferrosalite composition and grandite garnets with intermediate composition. Based on these calc-silicate assemblages, the temperatures of early skarn formations have been in the ranges of $550^{\circ}$ to $450^{\circ}$. The calc-silicate assemblages formed during the earlier half period of late skarn stage show the enrichment of notable iron and slight manganese, and the depletion of magnesium; clinopyroxenes are hedenbergitic, and grandite garnets are andraditic. The formation temperatures during this skarn stage are inferred to have been in the range of $430^{\circ}$ to $470^{\circ}C$ at low $X_{CO_2}$ by data from fluid inclusions of late andraditic garnets. The later half period of late skarn stage is characterized by the hydrous alteration of pre-existing minerals and the formation of hydrous silicates. The main iron-tungsten mineralization representing prominent deposition of magnetite immediately followed by minor scheelite impregnation has taken place at the middle of early skarn stage, while complex polymetallic mineralization has proceeded during and after the late skarn stage. Various metals and semimetals of Fe, Ni, Co, Cu, Zn, As, Mo, Ag, In, Sn, Sb, Te, Pb and Bi have been in various states such as native metal, sulphides, arsenides, sulphosaits, sulpharsenides and tellurides.

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