• Journal of the Korean Electrochemical Society
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• v.6 no.2
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• pp.93-97
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• 2003

The electrode for a supercapacitor was prepared using an amorphous ruthenium oxide, which was synthesized from ruthenium trichloride hydrate$(RuO_2{\cdot}nH_2O)$. A supercapacitor was assembled with an electrode of ruthenium oxide material on a current collector of tantalum, and an electrolyte of 4.8 M sulfuric acid. The result of the AC impedance analyses on $Ta/H_2SO_4(4.8 M)/Pt$ cell showed that tantalum was stable at the potential range of $0.0\~1.1V(vs. SCE)$. Therefore, Ta film could be used the supercapacitor as a current collector. The irreversible hydrolysis in the supercapacitor occurred over ca. 1.0V(vs.SCE) when the supercapacitor was protonated to 0.5V(vs. SCE). The supercapacitor protonated to 0.5V(vs.SCE) showed good electrochemical properties when it was tested at the potential range of 1.0V in the charge-discharge test. The potential range of the electrodes including the positive and the negative electrode was varied between -0.004 and 0.995V(vs. SCE). The potential ranges of the positive and the negative electrode were $-0.004\~0.515V(vs.\;SCE)\;and\; 0.515\~0.995V(vs.\;SCE)$, respectively.

• Maxillofacial Plastic and Reconstructive Surgery
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• v.41
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• pp.52.1-52.8
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• 2019

Background: A compact passive oxide layer can grow on tantalum (Ta). It has been reported that this oxide layer can facilitate bone ingrowth in vivo though the development of bone-like apatite, which promotes hard and soft tissue adhesion. Thus, Ta surface treatment on facial implant materials may improve the tissue response, which could result in less fibrotic encapsulation and make the implant more stable on the bone surface. The purposes of this study were to verify whether surface treatment of facial implant materials using Ta can improve the biohistobiological response and to determine the possibility of potential clinical applications. Methods: Two different and commonly used implant materials, silicone and expanded polytetrafluoroethylene (ePTFE), were treated via Ta ion implantation using a Ta sputtering gun. Ta-treated samples were compared with untreated samples using in vitro and in vivo evaluations. Osteoblast (MG-63) and fibroblast (NIH3T3) cell viability with the Ta-treated implant material was assessed, and the tissue response was observed by placing the implants over the rat calvarium (n = 48) for two different lengths of time. Foreign body and inflammatory reactions were observed, and soft tissue thickness between the calvarium and the implant as well as the bone response was measured. Results: The treatment of facial implant materials using Ta showed a tendency toward increased fibroblast and osteoblast viability, although this result was not statistically significant. During the in vivo study, both Ta-treated and untreated implants showed similar foreign body reactions. However, the Ta-treated implant materials (silicone and ePTFE) showed a tendency toward better histological features: lower soft tissue thickness between the implant and the underlying calvarium as well as an increase in new bone activity. Conclusion: Ta surface treatment using ion implantation on silicone and ePTFE facial implant materials showed the possibility of reducing soft tissue intervention between the calvarium and the implant to make the implant more stable on the bone surface. Although no statistically significant improvement was observed, Ta treatment revealed a tendency toward an improved biohistological response of silicone and ePTFE facial implants. Conclusively, tantalum treatment is beneficial and has the potential for clinical applications.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.382-382
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• 2010

$TaO_2$ thin films as gate dielectrics have been proposed to overcome the problems of tunneling current and degradation mobility in achieving a thin equivalent oxide thickness. An extremely thin $SiO_2$ layer is used in order to separate the carrier in MOSFETchannel from the dielectric field fluctuation caused by phonons in the dielectric which decreases the carrier mobility. The electronic and optical properties influenced the device performance to a great extent. The atomic structure of amorphous and crystalline Tantalum oxide ($TaO_2$) gate dielectrics thin film on Si (100) were grown by utilizing atomic layer deposition method was examined using Ta-K edge x-ray absorption spectroscopy. By using X-ray photoelectron spectroscopy and reflection electron energy loss spectroscopy (REELS) the electronic and optical properties was obtained. In this study, the band gap (3.400.1 eV) and the optical properties of $TaO_2$ thin films were obtained from the experimental inelastic scattering cross section of reflection electron energy loss spectroscopy (REELS) spectra. EXAFS spectra show that the ordered bonding of Ta-Ta for c-$TaO_2$ which is not for c-$TaO_2$ thin film. The optical properties' e.g., index refractive (n), extinction coefficient (k) and dielectric function ($\varepsilon$) were obtained from REELS spectra by using QUEELS-$\varepsilon$(k, $\omega$)-REELS software shows good agreement with other results. The energy-dependent behaviors of reflection, absorption or transparency in $TaO_2$ thin films also have been determined from the optical properties.

• Proceedings of the Korean Nuclear Society Conference
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• 2005.05a
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• pp.281-282
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• 2005

• Proceedings of the Materials Research Society of Korea Conference
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• 2009.11a
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• pp.24.1-24.1
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• 2009

Tantalum carbo-nitride($T_aC_xN_y$) films were deposited with chemical vapor deposition(CVD) using tert-butylimido tris-diethylamido tantalum (TBTDET, $^tBu-N=Ta-(NEt_2)_3$, $Et=C_2H_5$, $^tBu=C(CH_3)_3$) between $350^{\circ}C$ and $600^{\circ}C$ with argon as a carrier gas. Fourier transform infrared (FT-IR)spectroscopy was used to study the thermal decomposition behavior of TBTDET in the gas phase. When the temperature was increased, C-H and C-N bonding of TBTDET disappeared and the peaks of ethylene appeared above $450^{\circ}C$ in the gas phase. The growth rate and film density of $T_aC_xN_y$ film were in the range of 0.1nm/min to 1.30nm/min and of $8.92g/cm^3$ to $10.6g/cm^3$ depending on the deposition temperature. $T_aC_xN_y$ films deposited below $400^{\circ}C$ were amorphous and became polycrystal line above $500^{\circ}C$. It was confirmed that the $T_aC_xN_y$ film was a mixture of TaC, graphite, $Ta_3N_5$, TaN, and $Ta_2O_5$ phases and the oxide phase was formed from the post deposition oxygen uptake. With the increase of the deposition temperature, the TaN phase was increased over TaC and $Ta_3N_5$ and crystallinity, work function, conductivity and density of the film were increased. Also the oxygen uptake was decreased due to the increase of the film density. With the increase of the TaC phase in $T_aC_xN_y$ film, the work function was decreased to 4.25eV and with the increase of the TaN phase in $T_aC_xN_y$ film,it was increased to 4.48eV.

• Korean Journal of Materials Research
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• v.12 no.9
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• pp.706-711
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• 2002

High-pure tantalum powder was fabricated through Na reduction process and has been produced by using $K_2$TaF$_{7}$, and KCI, KF for raw material and diluent, respectively. A raw material and diluent were charged at the hestalloy bomb by the weight rate of 1:2, 1:1, 1:0.5 and 1:0.25 each other, investigated properties of morphology, chemical composition and yield and particle size after reduced. Ta metal has been achieved by reduction of $K_2$$TaF_{7}$ 500g with 1% sodium in excess of stoichiometric amount in the charge at a reduction temperature of $850^{\circ}C$ for 3hours. According to amount of the diluent, a formation of the powder doesn't have an effect. The diluent prevented the temperature rising caused from the heat of reaction and it maintained the speed of reducing reaction. But in the mixture ratio of raw material and diluent in the 1 : 2 and 1 : 0.25, an oxide and partially not reacted K were detected. As the amount of diluent increased, the size of tantalum powder decreased. According as raw material and the mixture ratio of diluent change from 1:0.25 to 1:2, the size is decreased from 5$\mu\textrm{m}$ to 1$\mu\textrm{m}$, and a particle size distribution which is below 325 mesh in fined powder increases from 71% to 83%. In the case of average size of Tantalum powder which is the mixture ratio (1:0.5), we would get the Ta powder with grain size about 3$\mu\textrm{m}$, which come close to the average size (2~4$\mu\textrm{m}$) of tantalum powder which is used commonly in the present is Ta powder about 3$\mu\textrm{m}$.

• Journal of the Korean Electrochemical Society
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• v.5 no.1
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• pp.21-26
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• 2002

A supercapacitor was developed using an amorphous ruthenium oxide material. The electrode of supercapacitor was prepared using an amorphous ruthenium oxide, which was synthesized from ruthenium trichloide hydrate$(RuCl_3{\cdo5}xH_2O)$. Thin film of tantalum was used as a current collector because it had wide. potential window characteristics than titanium and 575304 materials. A supercapacitor was assembled with ruthenium oxide as an electrode active material and 4.8M sulfuric acid solution as an electrolyte. The specific capacitance of the electrode was tested by a cyclic voltammetry using a half cell. The maximum differential specific capacitances during the oxidative and the reductive scans were 710 and $645\;F/g-RuO_2{\cdot}nH_2O$, respectively. The average specific capacitance was $521\;F/g-RuO_2{\cdot}nH_2O$. The assembled supercapacitor was protonated to the potential level of 0.5V vs. SCE. Super-capacitor, which was adjusted to the appropriate protonation level, had the specific capacitance of $151\;F/g-RuO_2{\cdot}nH_2O$ based on the concept of full cell.

• Journal of Sensor Science and Technology
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• v.4 no.3
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• pp.80-88
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• 1995

This paper presents the fabrication of a metal-insulator-metal(MIM) antifuse structure consisting of insulators sandwiched between top electrode, Al, and bottom electrode, TiW and additionally studies on antifuse properties depending on the condition of insulator. The intermetallic insulators, prepared by means of sputter, comprised of silicon oxide and tantalum oxide. In such an antifuse structure, silicon oxide layer is utilized to decrease the leakage current and tantalum oxide layer, of which the dielectric strength is lower than that of silicon oxide, is also utilized to lower the breakdown voltage near 10V. Finally sufficient low leakage current, below 1nA, and low programming voltage, about 9V, could be obtained in antifuse device comprising $Al/Ta_{2}O_{5}(10nm)/SiO_{2}(10nm)/TiW$ structure and OFF resistance of 3$3.65M{\Omega}$ and ON resistance of $7.26{\Omega}$ could be also obtained. This $Ta_{2}O_{5}/SiO_{2}$ based antifuse structures will be promising for highly reliable programmable device.

• Journal of IKEEE
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• v.22 no.2
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• pp.356-361
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• 2018

We investigated a hydrogen gas sensor which is available in a high temperature atmosphere. The hydrogen sensors were fabricated into a metal-oxide-semiconductor (MOS) structure made of $Pd/Ta_2O_5/SiC$, and the thin tantalum oxide ($Ta_2O_5$) layer was fabricated by rapid thermal oxidation (RTO). In the experiment, we made three types of sensors with different palladium (Pd) patterns to evaluate the effect of Pd electrode on response characteristics. As the result, the response characteristics in capacitance were improved further when the filled area of the Pd electrode became larger.

• 한국정보디스플레이학회:학술대회논문집
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• 2000.01a
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• pp.37-38
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• 2000

The ZnS:Tb thin-film electroluminescent devices were grown by atomic layer deposition with utilizing single-layer aluminum oxide and/or multilayered tantalum aluminum oxide, $Ta_xAl_yO$, as upper and lower insulating layers. These devices were investigated in terms of the luminescent and electrical characteristics. From this analysis, the devices using the $Ta_xAl_yO$ instead of $Al_2O_3$ were observed to have a lower threshold voltage for emission due to the higher relative dielectric constant of $Ta_xAl_yO$ insulators than that of the $Al_2O_3$ device. And there was a large amount of dynamic space charge generation in the phosphor of the device with the $Ta_xAl_yO$ insulators seemingly due to electron multiplication such as trap ionization.