• Journal of the Korean Crystal Growth and Crystal Technology
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• v.29 no.6
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• pp.294-297
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• 2019

New insights about macro-step formation has been investigated. The phenomena of surface instability caused by the interaction between step flow and fluid flow was describe in mechanical way. The rotation of the seed crystal in a clockwise direction was applied with a speed varied from 30 to 200 rpm during the TSSG process on the Si- and C-faces 4H-SiC. The macro-steps were formed along the two specific directions at different locations on the crystal for each, i.e., [10-10] or [01-10] directions or both. From the results, it is suggested that the macro-steps were generated from the micro-steps by interaction between step flow and fluid flow during the rotation of seed crystal. Furthermore, The fluid flow could be effective to control the micro- and/or macro-step behavior during solution growth.

• Journal of the Korean Ceramic Society
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• v.33 no.1
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• pp.56-64
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• 1996

A large amount of papers about the cubic-to-tetragonal phase transition the ferroelectric domain structures of the BaTiO3 were already reported but there exist still some needs to observe the domain behaviors directly. In this study the domain structures of the tinned plates prepared from ta single crystal grown by the TSSG technique were observed using a polarizing microscope TE and X-ray topography. The spatial relation be-tween the orientation states of domains was investigated and the effects of external stresses and electric fields on the behaviors of ferroelectric and ferroelastic domains were studied. All the 90$^{\circ}$walls cut off in the crystal are the wedge shaped lamellar domains and all the straight boundaries in the observed domain patte군 can be interpreted as the head-to-tail 90$^{\circ}$walls. The irregular overlapped boundaries commonly observed by using a polarizing microscope and X-ray topography are complex combinations of well-known 90$^{\circ}$walls and are domain walls were predominant and were stabilized after surface polishing. In the paraelectric phase region the domain walls vanished but the residual surface strain patterns could be seen at the same positions of the stabilized 90$^{\circ}$a-a walls in the tetragonal phase region, These stabilized walls resulted from the surface strain had a memory effect in domain formation during the repeated phase transitions and could notr be affected by an external electtric field.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2018.06a
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• pp.113-113
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• 2018

환경 친화형 전기자동차, 하이브리드 자동차, 전철 등에서는 고내압 및 소형으로 전력손실을 감소시킬 수 있는 파워 디바이스가 필수이다. 최근, 실리콘 카바이드(SiC, silcon carbide)는 기존 실리콘(Si)보다 스위칭 손실의 저감 및 고온환경에서의 동작 특성이 우수하여, 차세대 저 손실 전력반도체 재료로서 기대를 받고 있다. 용액 성장 법에서 고품질 SiC 결정을 만들 수 있다. 그러나 늦은 성장 속도 때문에 SiC의 양산을 어렵게 하고 있다. 현재까지 성장 속도 향상을 위한 Si용매에 Cr을 첨가하여 탄소 용해도를 높이는 방법이 사용되고 안정된 성장을 위한 Si-Cr용매에 Al를 첨가하는 등 다양한 금속을 첨가하는 방법이 이용되고 있다. 선행 연구에서는 다양한 용매인 탄소 용해도를 실측하고 특히 큰 탄소 용해도를 보인 것은 Co이었다. 본 연구에서는 $Si_{0.6}Cr_{0.4}$원료와 Co를 첨가한 $Si_{0.56}Cr_{0.4}Co_{0.04}$의 용매에 의한 SiC용액 성장을 실시하고 결정 성장 속도 및 표면 상태의 변화를 검토했다. on-axis 4H-SiC(000-1)을 사용한 Top-seeded solution growth(TSSG)법과 원자 비율로 $Si_{0.6}Cr_{0.4}$와 $Si_{0.56}Cr_{0.4}Co_{0.04}$의 용매를 이용하여 SiC 용액 성장을 실시했다. Ar가스에서 저항 가열로 내를 치환 후에 $1800^{\circ}C$까지 가열하고 종자화 후에 120분간 유지하고 결정 성장을 실시했다. 냉각 후에 성장의 표면에 남은 용매를 $HF+HNO_3$에서 제거했다. 광학 현미경을 이용하여 결정면과 두께를 관찰 측정했다. Co를 첨가한 $Si_{0.56}Cr_{0.4}Co_{0.04}$의 경우는 $Si_{0.6}Cr_{0.4}$의 경우보다 결정 성장 속도가 향상됐다. 또한 $Si_{0.6}Cr_{0.4}$보다 step-flow의 성장을 나타낸 결정의 표면이 전반적으로 관찰됐으며 안정된 결정성장을 나타냈다. 본 연구에서 실시한 연구 방법과 결과는 고품질 및 고속의 SiC 용액성장을 위한 매우 유용한 자료로 활용 될 수 있을 것으로 판단한다.

• Broadcasting and Media Magazine
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• v.6 no.1
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• pp.78-87
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• 2001

Seven kinds of most representative photorefractive crystals expected to contribute to the realization of the volume holographic storage were reviewed The growth conditions and problems for highly homogeneous optical qualities of the following crystals depending on the growth methods were discussed;(1) $LiNbO_3$ and $Bi_2SiO_{20}$ by Czochralski method (2) $Bi_{12}TiO_{20}$, $KNbO_3$ and $BaTiO_3$ by top seeded solution growth and (3) $(Sr_{1-x}Ba_{x})Nb_{2}O_{6}$ and $(K_{1-y}Na_y)_{2A-2}(Sr_{1-x}Ba_x)_{2-A}Nb_2O_6$ by Stepanov method, And then the figure of merits for the estimation of phororefractive materials on performances, such as $Q_1$, $Q_2$ and sensitivity, were discussed.

• Korean Journal of Crystallography
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• v.8 no.2
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• pp.75-80
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• 1997

A perovskite relaxor ferroelectrics PMN is used as an important material to investigate the diffusive phase transition phenomena. In this study PMN single crystals were grown and the microstructure were observed. For the growth of PMN single crystals, the spontaneous nucleation technique and the TSSG technique were used. 2-5mm single crystals were grown from PbO self flux and it was observed that only PMN crystals were grown when excess MgO was added over 100% as flux. Single crystals with well developed (001) faces were obtained from PbO-B2O3 flux. single crystals larger than 1 cm were grown from PbO-B2O3 flux by TXXG technique. For higher quality crystals, optimization of the variables such as the rotation speed of seed crystal, the orientation of seed crystal, and cooling rate is needed. With grown crystals, it was confirmed by TEM diffraction pattern of thin plate crystal that the 1:1 ordering of Mg2+ and Nb5+ with small volume exists.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.26 no.1
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• pp.8-13
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• 2016

A top-seeded solution growth (TSSG) is a method of growing SiC single crystal from the Si melt dissolved the carbon. In this study, multiphysics modeling was conducted using COMSOL Multiphysics, a commercialized finite element analysis package, to get analytic results about electromagnetic analysis, heat transfer and fluid flow in the Si melt. Experimental results showed good agreements with simulation data, which supports the validity of the simulation model. Based on the understanding about solution growth of SiC and our set-up, crystal growth was conducted on off-axis 4H-SiC seed crystal in the temperature range of $1600{\sim}1800^{\circ}C$. The grown layer showed good crystal quality confirmed with optical microscopy and high resolution X-ray diffraction, which also demonstrates the effectiveness of the multiphysics model to find a process condition of solution growth of SiC single crystal.