• Journal of the Korean Crystal Growth and Crystal Technology
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• v.1 no.1
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• pp.39-50
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• 1991

Single crystals of yttrium iron garnet $(YIG:Y_3Fe_5O_{12})$have been grown by a modified floating zone crystal growth technique(Traveling Solvent Floating Zone, TSFZ method) using an infrared radiation convergence type heater. A series of evaluations for the resulting YIG single crystals were carried out. The grown crystals are 5~6mm in diameter and 15~35mm in length. The conditions of single crystal growth were as follows; growth rate 1mm/h, rotation rate 30rpm, gas flow rate 0.2 1/min., zone aspect ratio 1, convexity of interface 0.29, respectively.

• 한국초전도학회:학술대회논문집
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• v.12
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• pp.8-8
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• 2002

• Progress in Superconductivity
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• v.4 no.1
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• pp.14-18
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• 2002

We had succeeded to grow bulk sing1e crystals of La／sub 2-x／Sr／sub x／$CuO_4$by the traveling solvent floating zone method (TSFZ), and to prepare La／sub 2-x／Sr／sub x／CuO$_4$single-crystalline thick films on the Zn-doped La$_2$$CuO_4$ substrate by new liquid phase epitaxial technique using an infrared heating furnace (IR-LPE). In this paper, Ireview growth of bulk single crystals and single-crystalline thick films of La／sub 2-x／Sr／sub x／$CuO_4$, and discuss on their device properties to develop high speed integrated electronic devices.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.2 no.2
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• pp.1-1
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• 1992

YIG(Yttrium Iron Garnet) single crystals were grown by FZ(Floating Zone) method. Since YIG melts incongruently, TSFZ(Traveling Solvent Floating Zone) method which was modified FZ was applied to grow YIG single crystals. The optimum growth condition were growth rate Imm/hr, counter-rotation 30rpm and oxidized atmosphere was necessary to sintering and growth process. The quality of grown crystals depended on the degree of sintering. The voids were generated by the reaction of Fe ions with oxygen and the density of voids was increased with the growth rate increased. When the growth rate was more than 1.5mm/hr, the cellular growth occured and the density of dislocation was increased at the periphery of crystals. Also, secondary phases of orthoferrite(YFe$O_3$)compost ion were observed in the grown crystal.

• Journal of the Korean Ceramic Society
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• v.35 no.3
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• pp.280-286
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• 1998

LaAlO3 Single crystals used as a substrate for thin film depositions of a high temperature oxide su-perconductor YB2Cu3O7 and applied to microwave frequencies were grown by the Traveling Solvent Flati-ing Zone (TSFZ) method and characterized. For the growth of LaAlO3 single crystals polycrystalline fe-edrods were prepared from powder mixture of La2O3 and Al2O3 with a mole ratio of 1:1 calcined at 110$0^{\circ}C$ for 3h and sintered at 140$0^{\circ}C$ for 4h The growth LaAlO3 crystals was 4-5mm in diameter 30mm in length and dark brown. The growth rate was 2-3mm/h and the rotation speeds were 10rpm for an upper ro-tation and 40 rpm for a lower rotation The growing crystals and the feedrods were counter-rotated. The orientation of the grown single crystals of LaAlO3 was identified to be [111] direction. Dielectric constants were measured to be 30-33 between 100 kHz and 1 MHz in the 30$0^{\circ}C$ to 45$0^{\circ}C$ temperature range and 102 in a range of 100 kHz at the phase transformation temperature of 522$^{\circ}C$ Dielectric losses were calculated to be 1.8$\times$10-4 at the room temperature and 5.7$\times$10-3 at the phase transformation temperature. Lattice con-stants of the grown crystlals were determined to be aR=5.3806 $\AA$ and $\alpha$=60.043$^{\circ}$ by the least square method.

• Proceedings of the Korea Association of Crystal Growth Conference
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• 1999.06a
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• pp.371-387
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• 1999

La2-xSrxCuO4 single-crystalline films were prepared on bulk single crystals of Zn-doped La2CuO4 as the substrates by LPE technique using tow deferent methods. When prepared using an alumina crucible in normal electrical furnace, the La2-xSrxCuO4 films were contaminated with less than 3 at% aluminum from the alumina crucibles. Aluminum contamination either reduced or completely destroyed the superconductivity of the La2-xSrxCuO4 films. For LPE growthby modified TSFZ method using an infrared heating furnace without crucibles, the La2-xSrxCuO4 films of x=0.11 showed superconducting with Tconset 36 K, which is 10 K higher than that in the La2-xSrxCuO4 bulk single crystals.

• Proceedings of the Korea Association of Crystal Growth Conference
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• 1999.06a
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• pp.389-402
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• 1999

Single crystal of Li2Cu1-xMxO4 (M=Ni, Zn) are promising as a substrate to realize superconducting electronic devices. The distribution coefficients of Ni and Zn to the Cu site in La2CuO4 (LCO) were estimated by the zone melting technique to grow high quality single crystals of La2Cu1-xMxO4(M=Ni, Zn). The distribution coefficient value of Ni was estimated to be 4.2 and that of Zn was estimated to be 0.66, respectively. Suitable solvent compositions were determined using these values to grow single crystals by he traveling floating zone (TSFZ) method. Single crystal of LCO, La2Cu1-xMxO4(M=Ni(x=0.01, 0.02, 0.03, 0.04), Zn(x=0.01, 0.02, 0.03) of high homogeneity were grown. The behaviors of the magnetization of these as-grown crystals do not indicate superconductivity except LCO. Ni or Zn substitution can make LCO non superconductor. This fact suggest that single crystals substituted by Ni or Zn are useful as substrate crystals.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.9 no.3
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• pp.299-302
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• 1999

$La_{2-x}Sr_{x}CuO_{4}$ single-crystalline films were prepared on bulk single crystals of Zn-doped $La_{2-x}Sr_{x}CuO_{4}$ as the substrates by LPE technique using two deferent methods. When prepared using an alumina crucible in normal electrical furnace, the $La_{2-x}Sr_{x}CuO_{4}$ films were contaminated with less than 3 at% aluminum from the alumina crucibles. Aluminum contamination either reduced or completely destroyed the superconductivity of the $La_{2-x}Sr_{x}CuO_{4}$ films, For LPE growth by modified TSFZ method using an infrared heating furnace without crucibles, the $La_{2-x}Sr_{x}CuO_{4}$ films of x=0.11 showed superconducting with $Tc_{onset}=36\;K$, which is 10 K higher than that in the $La_{2-x}Sr_{x}CuO_{4}$ bulk single crystals.