• 한국결정성장학회지
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• 제1권1호
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• pp.39-50
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• 1991

적외선 집중가열 방식의 FZ장치를 이용하여 floation zone 결정 성장기술을 변형한 traveling solvent floating zone(TSFZ)기술로 yttrium iron garnet(YIG: Y3Fe5O12) 단결정을 성장하였다. 또한 TSFZ기술을 확립하기 위하여 단결정 성장시 미치는 여러 가지 영향을 조사하였다. 성장된 YIG결정은 직경이 5~6mm, 길이가 15~36mm이었으며, 이때 성장조건은 성장속도 1mm/h, 회전속도 30rpm, gas flow rate 0.2 1/min, zone aspect ratio 0.9~1, convexity 0.29이었다.

• 한국초전도학회:학술대회논문집
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• 한국초전도학회 2002년도 High Temperature Superconductivity Vol.XII
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• pp.8-8
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• 2002

• Progress in Superconductivity
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• 제4권1호
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• pp.14-18
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• 2002

We had succeeded to grow bulk sing1e crystals of La／sub 2-x／Sr／sub x／$CuO_4$by the traveling solvent floating zone method (TSFZ), and to prepare La／sub 2-x／Sr／sub x／CuO$_4$single-crystalline thick films on the Zn-doped La$_2$$CuO_4$ substrate by new liquid phase epitaxial technique using an infrared heating furnace (IR-LPE). In this paper, Ireview growth of bulk single crystals and single-crystalline thick films of La／sub 2-x／Sr／sub x／$CuO_4$, and discuss on their device properties to develop high speed integrated electronic devices.

• 한국결정성장학회지
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• 제2권2호
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• pp.1-1
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• 1992

YIG는 분해용융을 하므로 FZ법을 개량한 TSFZ법을 적용하여 YIG단결정을 성장시켰다. 최적성장조건은 성장속도 1mm/hr, 상호역방향 회전속도 30rpm이었으며 소결 및 결정성장시 산화분위기를 필요로 하였고 성장된 결정의 질은 소결정도에 의해 많은 영향을 받았다. Melt내 기포의 생성은 철이온과 산소와의 반응에 의해 발생되었으며 기포의 밀도는 성장속도가 빨라질수록 증가하였다. 성장속도는 1mm/hr 이상일 경우에는 Cell Growth가 발생하였으며 결정의 가장자리에서 전위밀도가 증가하였다. 또한 성장된 결정에서는 제2상으로 Orthoferrite가 관찰되었다.

• 한국세라믹학회지
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• 제35권3호
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• pp.280-286
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• 1998

LaAlO3 Single crystals used as a substrate for thin film depositions of a high temperature oxide su-perconductor YB2Cu3O7 and applied to microwave frequencies were grown by the Traveling Solvent Flati-ing Zone (TSFZ) method and characterized. For the growth of LaAlO3 single crystals polycrystalline fe-edrods were prepared from powder mixture of La2O3 and Al2O3 with a mole ratio of 1:1 calcined at 110$0^{\circ}C$ for 3h and sintered at 140$0^{\circ}C$ for 4h The growth LaAlO3 crystals was 4-5mm in diameter 30mm in length and dark brown. The growth rate was 2-3mm/h and the rotation speeds were 10rpm for an upper ro-tation and 40 rpm for a lower rotation The growing crystals and the feedrods were counter-rotated. The orientation of the grown single crystals of LaAlO3 was identified to be [111] direction. Dielectric constants were measured to be 30-33 between 100 kHz and 1 MHz in the 30$0^{\circ}C$ to 45$0^{\circ}C$ temperature range and 102 in a range of 100 kHz at the phase transformation temperature of 522$^{\circ}C$ Dielectric losses were calculated to be 1.8$\times$10-4 at the room temperature and 5.7$\times$10-3 at the phase transformation temperature. Lattice con-stants of the grown crystlals were determined to be aR=5.3806 $\AA$ and $\alpha$=60.043$^{\circ}$ by the least square method.

• 한국결정성장학회:학술대회논문집
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• 한국결정성장학회 1999년도 PROCEEDINGS OF 99 INTERNATIONAL CONFERENCE OF THE KACG AND 6TH KOREA·JAPAN EMG SYMPOSIUM (ELECTRONIC MATERIALS GROWTH SYMPOSIUM), HANYANG UNIVERSITY, SEOUL, 06월 09일 JUNE 1999
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• pp.371-387
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• 1999

La2-xSrxCuO4 single-crystalline films were prepared on bulk single crystals of Zn-doped La2CuO4 as the substrates by LPE technique using tow deferent methods. When prepared using an alumina crucible in normal electrical furnace, the La2-xSrxCuO4 films were contaminated with less than 3 at% aluminum from the alumina crucibles. Aluminum contamination either reduced or completely destroyed the superconductivity of the La2-xSrxCuO4 films. For LPE growthby modified TSFZ method using an infrared heating furnace without crucibles, the La2-xSrxCuO4 films of x=0.11 showed superconducting with Tconset 36 K, which is 10 K higher than that in the La2-xSrxCuO4 bulk single crystals.

• 한국결정성장학회:학술대회논문집
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• 한국결정성장학회 1999년도 PROCEEDINGS OF 99 INTERNATIONAL CONFERENCE OF THE KACG AND 6TH KOREA·JAPAN EMG SYMPOSIUM (ELECTRONIC MATERIALS GROWTH SYMPOSIUM), HANYANG UNIVERSITY, SEOUL, 06월 09일 JUNE 1999
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• pp.389-402
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• 1999

Single crystal of Li2Cu1-xMxO4 (M=Ni, Zn) are promising as a substrate to realize superconducting electronic devices. The distribution coefficients of Ni and Zn to the Cu site in La2CuO4 (LCO) were estimated by the zone melting technique to grow high quality single crystals of La2Cu1-xMxO4(M=Ni, Zn). The distribution coefficient value of Ni was estimated to be 4.2 and that of Zn was estimated to be 0.66, respectively. Suitable solvent compositions were determined using these values to grow single crystals by he traveling floating zone (TSFZ) method. Single crystal of LCO, La2Cu1-xMxO4(M=Ni(x=0.01, 0.02, 0.03, 0.04), Zn(x=0.01, 0.02, 0.03) of high homogeneity were grown. The behaviors of the magnetization of these as-grown crystals do not indicate superconductivity except LCO. Ni or Zn substitution can make LCO non superconductor. This fact suggest that single crystals substituted by Ni or Zn are useful as substrate crystals.

• 한국결정성장학회지
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• 제9권3호
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• pp.299-302
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• 1999

$La_{2-x}Sr_{x}CuO_{4}$ single-crystalline films were prepared on bulk single crystals of Zn-doped $La_{2-x}Sr_{x}CuO_{4}$ as the substrates by LPE technique using two deferent methods. When prepared using an alumina crucible in normal electrical furnace, the $La_{2-x}Sr_{x}CuO_{4}$ films were contaminated with less than 3 at% aluminum from the alumina crucibles. Aluminum contamination either reduced or completely destroyed the superconductivity of the $La_{2-x}Sr_{x}CuO_{4}$ films, For LPE growth by modified TSFZ method using an infrared heating furnace without crucibles, the $La_{2-x}Sr_{x}CuO_{4}$ films of x=0.11 showed superconducting with $Tc_{onset}=36\;K$, which is 10 K higher than that in the $La_{2-x}Sr_{x}CuO_{4}$ bulk single crystals.