• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.421-421
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• 2009

Since carbon nanotubes (CNTs) are discovered, tremendous attentions have been paid to these materials due to their unique mechanical, electrical and chemical properties. Thereupon, many methods to produce a large scale of CNTs have been contrived by many scientists and engineers. Thus the examination of growth mechanisms of CNTs, which is essential to produce CNTs in large scale, has been an attractive issue. Though many scientists have been strived to investigate and understand the growth mechanisms of CNTs, many of them still remain controversial or unclear. Here we introduce representative growth mechanisms of CNTs, based on broadly employed fabrication methods of CNTs. We applied Thermo-electrical Pulse Induced Evaporation (TPIE) method based on field and thermal evaporation to synthesis of CNTs. However TPIE method was originally devised to fabricate graphene sheets and $Ge_2Sb_2Te_5$ nanostructures. While performing TPIE experiments to synthesize graphene, we eventually found experimental results widely supporting the growth model of CNTs proposed already. We observed the procedure of growth of CNTs obtained by TPIE method through Transmission Electron Microscopy (TEM). We believe this study provides an experimental basis on understanding and investigating carbon-based nanomaterials.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.412-412
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• 2009

Carbon-based nano materials have a significant effect on various fields such as physics, chemistry and material science. Therefore carbon nano materials have been investigated by many scientists and engineers. Especially, since graphene, 2-dimemsonal carbon nanostructure, was experimentally discovered graphene has been tremendously attracted by both theoretical and experimental groups due to their extraordinary electrical, chemical and mechanical properties. Electrical conductivity of graphene is about ten times to that of silicon-based material and independent of temperature. At the same time silicon-based semiconductors encountered to limitation in size reduction, graphene is a strong candidate substituting for silicon-based semiconductor. But there are many limitations on fabricating large-scale graphene sheets (GS) without any defect and controlling chirality of edges. Many scientists applied micromechanical cleavage method from graphite and a SiC decomposition method to the fabrication of GS. However these methods are on the basic stage and have many drawbacks. Thereupon, our group fabricated GS through Thermo-electrical Pulse Induced Evaporation (TPIE) motivated by arc-discharge and field ion microscopy. This method is based on interaction of electrical pulse evaporation and thermal evaporation and is useful to produce not only graphene but also various carbon-based nanostructures with feeble pulse and at low temperature. On fabricating GS procedure, we could recognize distinguishable conditions (electrical pulse, temperature, etc.) to form a variety of carbon nanostructures. In this presentation, we will show the structural properties of OS by synthesized TPIE. Transmission Electron Microscopy (TEM) and Optical Microscopy (OM) observations were performed to view structural characteristics such as crystallinity. Moreover, we confirmed number of layers of GS by Atomic Force Microscopy (AFM) and Raman spectroscopy. Also, we used a probe station, in order to measure the electrical properties such as sheet resistance, resistivity, mobility of OS. We believe our method (TPIE) is a powerful bottom-up approach to synthesize and modify carbon-based nanostructures.