• Bulletin of the Korean Chemical Society
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• v.34 no.1
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• pp.107-111
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• 2013

A new green-emitting material with donor-acceptor architecture, 3,7-bis(1'-phenylbenzimidazole-2'-yl)-10-phenylphenothiazine (BBPP) was synthesized and its thermal, optical, and electroluminescent characteristics were investigated. Organic light-emitting diodes (OLEDs) with four different multilayer structures were prepared using BBPP as an emitting layer. The optimized device with the structure of [ITO/2-TNATA (40 nm)/BBPP (30 nm)/TPBi (30 nm)/Alq3 (10 nm)/LiF (1 nm)/Al (100 nm)] exhibited efficient green emission. Enhanced charge carrier balance and electron mobility in the organic layers enabled the device to demonstrate a maximum luminance of 31,300 cd/$m^2$, a luminous efficiency of 6.83 cd/A, and an external quantum efficiency of 1.62% with the CIE 1931 chromaticity coordinates of (0.21, 0.53) at a current density of 100 mA/$cm^2$.

• Journal of Sensor Science and Technology
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• v.31 no.4
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• pp.238-243
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• 2022

In this study, a pyrene-core single molecule with amino (-NH₂) functional group material was hybridized using ZnO quantum dots (QDs). The suppressed performance of the 1-aminopyrene (1-PyNH₂) single molecule as an emissive layer (EML) in light-emitting diodes (LEDs) was exploited by adopting the ZnO@1-PyNH₂ core-shell structure. Unlike pristine 1-PyNH₂ molecules, the ZnO@1-PyNH₂ hybrid QDs formed energy proximity levels that enabled charge transfer. This result can be interpreted as an improvement in surface roughness. The uniform and homogeneous EML alleviates dark-spot degradation. Moreover, LEDs with the ITO/PEDOT:PSS/TFB/EML/TPBi/LiF/Al configuration were fabricated to evaluate the performance of two emissive materials, where pristine-1-PyNH₂ molecules and ZnO@1-PyNH₂ QDs were used as the EML materials to verify the improvement in electrical characteristics. The ZnO@1-PyNH₂ LEDs exhibited blue luminescence at 443 nm (FWHM = 49 nm), with a turn-on voltage of 4 V, maximum luminance of 1500 cd/m², maximum luminous efficiency of 0.66 cd/A, and power efficiency of 0.41 lm/W.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.226-226
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• 2016

PHOLED devices which have the structure of ITO/HAT-CN(5nm)/NPB(50nm)/EML(30nm)/TPBi(10nm)/Alq3(20nm)/LiF(0.8nm)/Al(100nm) are fabricated to investigate the green emission profile in EML by using a gasket doping method. CBP and Ir(ppy)3 (2% wt) are co-deposited homogeneously as a background material of EML for green PHOLED, then a 5nm thickness of additionally doped layer by Ir(btp)2 (8% wt) is formed as a profiler of the green emission. The total thickness of the EML is maintained at 30nm while the distance of the profiler from the HTL/EML interface side (x) is changed in 5nm steps from 0nm to 25nm. As shown in Fig. 1, the green (513nm) peak from Ir(ppy)3 is not observed when Ir(btp)2 is also doped homogeneously because Ir(ppy)3 works as an gasket dopant of the Ir(btp)2 :CBP system. Therefore, in this experment, Ir(btp)2 can be used as a profiler of the green emission in CBP:Ir(ppy)3 system. The emission spectra from the PHOLED devices with different x are shown in Fig. 2. In this gasket doping system, stronger red peak means more energy transfer from green to red dopant or higher exciton density by green dopant. To find the green emission profile, the external quantum efficiency (EQE) at 3mA/cm2 for red peaks are calculated. More green light emission at near EML/HBL interface than that of HTL/EML is observed (insert of Fig. 2). This means that the higher exciton density at near EML/HBL interface in homogeneously doped CBP with Ir(ppy)3. As shown in Fig. 3, excitons can be quenched easily to HTL(NPB) because the T1 level of HTL(2.5eV) is relatively lower than that of EML(2.6eV). On the other hand, the T1 level of HBL(2.7eV) is higher than that of EML.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.225-225
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• 2016

PHOLED devices which have the structure of ITO/HAT-CN(5nm)/NPB(50nm)/EML(47nm)/TPBi(10nm)/Alq3(20nm)/LiF(0.8nm)/Al(100nm) are fabricated to investigate the diffusion length of the triplet exciton by using double-quantum-well(DQE) EML structure. To fabricate DQW structures, Ir(ppy)3(2% wt) and Ir(btp)2(8% wt) are used as green and red emission zones, respectively. In DQW structured EML, as shown in Fig. 1, 1nm thick layers of green and red emission zones are located middle of the EML, and the distance between these wells(x) is changed from 0nm to 10nm. As shown in Fig. 2, the emission spectra from DQW PHOLED devices are changed with different x. The intensity of the green emission(520nm) is decreased when x is decreased, and it goes to near zero when x=0nm. This behavior can be identified as the diffusion of the triplet excitons from Ir(ppy)3 to Ir(btp)2 by the Dexter energy transfer(DET). From the external quantum efficiency(EQE) of the red emission, as shown in Fig. 3, the diffusion length of the triplet excitons can be determined by the equation of DET rate, R=A Exp(-2RDA/L), where RDA is donor-acceptor distance and L is the sum of the van der Wals radii. As a result, the measured data of the red EQEs with different x are identified to theoretical result from the equation of DET rate(Fig. 4). From this results, we could confirm that the diffusion length of the triplet excitons can be determined by using DQW structure and this method is very useful to investigate the behavior of the excitons in PHOLEDs.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.224-224
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• 2016

Many researchers have been tried to improve the performance of the phosphorescent organic light-emitting diode(PHOLED) by controlling of the dopant profile in the emission layer. In this work, as shown in Fig. 1 insert, a typical red PHOLED device which has the structure of ITO/NPB(50nm)/CBP(30nm)/TPBi(10nm)/Alq3(20nm)/LiF(0.8nm)/Al(100nm) is fabricated with a 5nm thick doping section in the emission layer. The doping section is formed by co-deposition of CBP and Ir(btp)2acac with a doping concentration of 8%, and it's location(x) is changed from HTL/EML interface to EML/HBL in 5nm steps. The current efficiency versus current density of the devices are shown in Fig. 1. By changing the location of doping section, as shown in Fig. 1 and 2, at x=5nm, the efficiency shows the maximum of 3.1 cd/A at 0.5 mA/cm2 and it is slightly decreased when the section is closed to HTL and slightly increased when the section is closed to HBL. If the doping section is closed to HTL(NPB) the excitons can be quenched easily to NPB's triplet state energy level(2.5eV) which is relatively lower than that of CBP(2.6eV). Because there is a hole accumulation at EML/HBL interface the efficiency can be increased slightly when the section is closed to HBL. Even the thickness of the doping section is only 5nm,. the maximum efficiency of 3.1 cd/A with x=5 is closed to that of the homogeneously doped device, 3.3 cd/A, because the diffusion length of the excitons is relatively long. As a result, we confirm that the current efficiency of the PHOLED can be improved by the doping profile optimization such as partially, not homogeneously, doped EML structure.

• Bulletin of the Korean Chemical Society
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• v.35 no.10
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• pp.3041-3046
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• 2014

Blue emitting materials, 9,10-bis-biphenyl-4-yl-anthracene (AC-P), 9,10-bis-[1,1';4',1"]terphenyl-4-yl-anthracene (AC-DP), and 9,10-bis[3",5"-deiphenyltriphenyl-4'-yl]anthracene (AC-TP) were synthesized through boration and Suzuki aryl-aryl coupling reaction. EL performance of blue light-emitters was optimized and improved by varying the chemical structures of the side groups. In the thin film state, the three materials exhibit $PL_{max}$ values in the range of 442-456 nm. EL device with the synthesized compounds in the following configuration was fabricated: ITO/4,4',4"-tris(N-(2-naphthyl)-N-phenylamino)triphenylamine (2-TNATA) 60nm/N,N'-bis (naphthalene-1-yl)-N,N'-bis(phenyl)benzidine (NPB) 15nm/synthesized blue emitting materials (30nm)/1,3,5-tri(1-phenyl-1H-benzo[d]imidazol-2-yl)phenyl (TPBi) 20nm/LiF 1nm/Al 200nm. The current efficiency and C.I.E. value of AC-TP were 3.87 cd/A and (0.15, 0.12). A bulky and non-planar side group helps to prevent ${\pi}-{\pi}^*$ stacking interaction, which should lead to the formation of more reliable amorphous film. This is expected to have a positive effect on the high efficiency of the operating OLED device.

• Journal of the Semiconductor & Display Technology
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• v.16 no.1
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• pp.40-44
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• 2017

The effect of weak dielectric silicone dioxide($SiO_2$) embedded in polyfluorene(PFO) emitting layer of polymer-based multi structure OLED was investigated. Indium tin oxide(ITO)/poly(3,4-ethylenedioxythiophene)-poly(styrenesulfonate) (PEDOT:PSS)/poly(9,9-di-n-octylfluorenyl-2,7-diyl)(PFO)/2,2,2"-(1,3,5-benzinetriyl)-tris(1-phenyl-1-H-benzimidazole) (TPBi)/aluminum(Al) structure OLED was fabricated by spin-coating method. Applied electric field causes some effect on $SiO_2$ in PFO layer. Thus, interaction between polymers and affected $SiO_2$ might generate electrical and luminance properties change. Experimental results, show the reduced threshold voltage of 6 V(from 23 V to 17 V). The maximum current density was rather increased from $71A/m^2$ to $610A/m^2$ and maximum brightness was also increased from $7.19cd/m^2$ to $41.03cd/m^2$, 9 and 6 times each. Additionally we obtained colour broadening result due to the increasing of blue-green band emission. Consequently we observed that electrical and luminance properties are enhanced by adding $SiO_2$ and identified the possibility of controlling the emission colour of OLED device according to colour broadening.