• The Transactions of the Korean Institute of Electrical Engineers C
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• v.49 no.5
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• pp.294-298
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• 2000

The $MgTiO_3\; and \;$0.9MgTiO_3-0.1SrTiO_3$ ceramics were fabricated by the conventional mixed-oxide method. The sintering temperature and time were $1300^{\circ}C~1600^{\circ}C$, 2hr., respectively. The structural and microwave dielectric properties were investigated with sintering temperature and the application for the satellite communication microwave dielectric resonator was investigated. The coexistence of cubic $SrTiO_3$ and hexagonal TEX>$MgTiO_3$ structures in $0.9MgTiO_3-0.1SrTiO_3$ ceramics were found from X-ray diffraction patterns. In the case of $MgTiO_3$ ceramics, sphere phase and needle-like phase were coexisted. The $0.9MgTiO_3-0.1SrTiO_3$ ceramics observed sphere phase. The dielectric constants and temperature coefficient of resonant $frequency(\tauf)$ were increased with addition of $SrTiO_3$ but the quality factor was decreased. The dielectric constant, quality factor and $\tau$f of the;$0.9MgTiO_3-0.1SrTiO_3$ ceramics were 22.61, 10.928(at 1GHz) and $+50.26ppm/^{\circ}C$, respectively.

• Proceedings of the Korean Ceranic Society Conference
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• 2000.10a
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• pp.206.1-206
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• 2000

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2000.11a
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• pp.10-11
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• 2000

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.11a
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• pp.196-199
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• 2000

마이크로파용 세라믹 유전체로 사용되는 MgTiO$_3$-CaTiO$_3$계 유전체에 Li을 첨가하여 이때 얻어지는 마이크로파 유전특성과 소결특성에 대하여 알아보았다. 94MgTiO$_3$-6CaTiO$_3$으로 주조성을 고정시키고 여기에 Li$_2$CO$_3$를 Li원자 기준으로 0 ~ 10 mol% 범위 안에서 첨가하여 1200~140$0^{\circ}C$의 온도에서 4시간 소결하였다. Li의 첨가량이 적을 때에는 유전체의 품질계수와 유전상수가 모두 감소하였으나 약 lmol% 이상 되면 다시 증가하였으며, 이후 첨가량이 과도해지면 다시 서서히 감소하는 경향을 볼 수 있었다. 1.0 ~ 3.0 mol%의 첨가량 범위 안에서 Li은 MgTiO$_3$-CaTiO$_3$계 유전체의 품질계수를 증가시켜주는 역할을 하는 것으로 나타났다 1.5mol%의 Li을 첨가하고 1275$^{\circ}C$에서 4시간 소결한 시편에서 유전상수는($\varepsilon$$_{r}$) 20.0, Qf는 78,000 그리고 공진주파수 온도계수($\tau$$_{f}$)는 -1.6ppm/$^{\circ}C$의 결과를 얻을 수 있었다.다.

• Journal of the Microelectronics and Packaging Society
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• v.7 no.3
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• pp.7-11
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• 2000

The low-voltage driven $SrTiO_3$ceramic varistor device was fabricated from $SrTiO_3$ powders prepared by co-precipitation method with $CuO-SiO_2$additives. Compare with conventional process, this process has advantages such as the reduction of the sintering temperature of $SrTiO_3$ ceramics by 100-$150^{\circ}C$ and the simplification of processing procedure. The non-linear coefficient value ($\alpha$) of the varistor showed 8.47 when it was sintered at $1350^{\circ}C$ for 2 h with 5 wt% additives in reducing atmosphere of 5% $H_2/N_2$ mixed gas. The low-voltage driven $SrTiO_3$ceramic varistor was obtained which has a breakdown voltage as low as 7 V.

• Journal of the Korean institute of surface engineering
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• v.15 no.3
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• pp.138-145
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• 1982

The effects of the simultaneous variations of the ratio of feed gases(H2/N2 Flow ratio), feed gas flow rate (H2/N2, total-flow rate) and partial pressures of TiCl4 (PTiCl41) as well as deposition time and cobalt content of the substrate on the deposition rate of the TiN Coated Cemented Tungsten Carbide Tools were investigated. Deposition was carried out in the temperature range of 930$^{\circ}C$-1080$^{\circ}C$ and an activation energy of 46.5 Kcal/mole can be calculated. Transverse rupture strength was noticeably reduced by the TiN coating on the virgin surfa-ce of Cemented Tungsten Carbide, the extent of which was decreased according to the coa-ting thickness. Microhardness value observed on the work was in the range of 1700∼2000kg/mm, which were in well agreement with the value of bult TiN. The wear resistance of TiN layers was performed by turning test and it was observed that crater and flank resistance remarkably enhanced by TiN coating.

• Journal of Industrial Technology
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• v.20 no.A
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• pp.239-245
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• 2000

Sintered $Al_2TiO_5$ has a very low thermal expansion and an infrared radiative selectively emitting large amounts of far infrared rays. However, it is week in mechanical strength. Spectral infrared emittance, thermal expansion coefficient, and mechanical strength of $Al_2TiO_5$-clay composites were studied to develop a material for far infrared radiators. The composites containing 10~50 mass% Jungsan clay had high emittance in the range of 2,000~500cm-1. The bending strength of the $Al_2TiO_5$-clay composites increased with increasing clay content. The $Al_2TiO_5$-clay composites with a clay content of 50mass% and heat-treated at $1,200^{\circ}C$ had a large strength for infrared radiators ; 86MPa. The average linear thermal expansion coefficient from $200{\sim}1,000^{\circ}C$ of the 50mass% jungsan clay containing compo sited heat-treated at $1,200^{\circ}C$ was lower than $3.87{\times}10-6/^{\circ}C$.

• Journal of the Korean Ceramic Society
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• v.37 no.2
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• pp.122-127
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• 2000

The thermal expansion, thermal stability, mechanical strength and infrared radiative property of Al2TiO5-clay composites, prepared from synthesized Al2TiO5 and clay, were investigated to develop a material for far infrared radiators. The emittance of composites containing 10~50 wt% clay, heated at 1,20$0^{\circ}C$ for 3 h, increased with increasing clay content and emittance was about 0.3 and 0.92 in the ranges of 3,400~2,500 cm-1 and 2,500~400cm-1, respectively. The bulk density and bending strength of the Al2TiO5-clay composites increased with increasing clay content. 50 wt% Al2TiO5-50 wt% clay composite, heat-treated at 1,20$0^{\circ}C$, had an adequate strength for infrared radiators; 80 MPa. The degree of thermal expansion hysteresis decreased with increasing clay content and the mean thermal expansion coefficient increased with increasing clay content. The thermal expansion coefficient of 50 wt% Al2TiO5-50 wt% clay composite heated at 1,20$0^{\circ}C$ was 5.78$\times$10-6/$^{\circ}C$.

• Proceedings of the Korean Ceranic Society Conference
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• 2000.10a
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• pp.39.2-39
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• 2000

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.04b
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• pp.88-91
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• 2000

The $(Sr_{0.85}Ca_{0.15})TiO_3$(SCT) thin films are deposited on Pt-coated electrode(Pt/TiN/$SiO_2$/Si) using RF sputtering method. The crystallinity of SCT thin films is increased with increase of substrate temperature in the temperature range of 200~500$[^{\circ}C]$. V-I characteristics of SCT thin films show the increasing leakage current with the increases of deposition temperature. The conduction mechanism of the SCT thin films observed in the temperature range of 25~100$[^{\circ}C]$ can be divided into four characteristic regions with different mechanism by the increasing current.