• Journal of Communications and Networks
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• v.15 no.6
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• pp.547-558
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• 2013

Ultra broadband communication systems operated at THz frequencies will require the thorough knowledge of the propagation channel. Therefore, an extensive measurement campaign of 50 GHz wide indoor radio channels is presented for the frequencies between 275 and 325 GHz. Individual ray paths are resolved spatially according to angle of arrival and departure. A MIMO channel is recorded in a $2{\times}2$ configuration. An advanced frequency domain ray tracing approach is used to deterministically simulate the THz indoor propagation channel. The ray tracing results are validated with the measurement data. Moreover, the measurements are utilized for the calibration of the ray tracing algorithm. Resulting ray tracing accuracies are discussed.

• The Journal of the Institute of Internet, Broadcasting and Communication
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• v.10 no.2
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• pp.1-6
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• 2010

Short-range wireless communication systems are expanding at rapid rate, finding application in offices and homes. Development of wireless local network is accompanied by steady increase in the demand for ever higher data rates. This in turn entails the necessity to develop communication systems which operate at higher frequencies. It can be expected that short-rage wireless communication networks will soon push towards the THz frequency range. We use a 3D ray-launching for analysis of propagation environments at the indoor fixtures. We extended the approach from the modeling of the reflectivity of optically thick, smooth building materials at THz frequencies to materials with a rough surface. The simulation result of propagation environment is similar to average received power of reference paper. The RMS delay spread was calculated to be 9.11 ns in a room size of $6m(L){\times}5m(W){\times}2.5m(H)$ for the concrete plaster.

• JSTS:Journal of Semiconductor Technology and Science
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• v.12 no.2
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• pp.230-239
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• 2012

In this paper, we present the radio-frequency (RF) modeling for gate-all-around (GAA) junctionless (JL) MOSFETs with 30-nm channel length. The presented non-quasi-static (NQS) model has included the gate-bias-dependent components of the source and drain (S/D) resistances. RF characteristics of GAA junctionless MOSFETs have been obtained by 3-dimensional (3D) device simulation up to 1 THz. The modeling results were verified under bias conditions of linear region (VGS = 1 V, VDS = 0.5 V) and saturation region (VGS = VDS = 1 V). Under these conditions, the root-mean-square (RMS) modeling error of $Y_{22}$-parameters was calculated to be below 2.4%, which was reduced from a previous NQS modeling error of 10.2%.