• Journal of the Korean Society of Radiology
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• v.10 no.1
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• pp.1-6
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• 2016

Recently, the various digital X-ray imaging devices using CCD and TFT LCD-based flat panel digital X-ray sensor are being used. In particular, a number of studies on photon counting sensor technique have been reported. In this study, the incident X-rays fluence on the photon counting sensor material was measured to estimate photon detection efficiency which is the quantitative performance evaluation factor of photon counting sensor. The result of measuring the photon fluence by using RQA-M2 Radiation beam quality of IEC 61223-1-2 recommendations, the incident photon fluence could be defined as about $4 photons/(0.01mm)^2{\cdot}{\mu}Gy$ within $10{\mu}m$ pin-hole area, and about $50photons/(0.03mm)^2{\cdot}{\mu}Gy$ within $30{\mu}m$ pin-hole area, and about $698photons/(0.1mm)^2{\cdot}{\mu}Gy$ within $100{\mu}m$ pin-hole area. Consequently, with the previously setup of the incident fluence, the measuring of actual photon counting efficiency by observing the output waveform of the photon counting sensor material was considered possible.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2005.06a
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• pp.1223-1227
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• 2005

Fine microgroove is the key component to fabricate micro-grating, micro-grating lens and so on. Conventional groove fabrication methods such as etching and lithography have some problems in efficiency and surface integrity. This study deals with the creation of ultra-precision micro grooves using non-rotational diamond tool and CNC machining center. The shaping type machining method proposed in the study allows to produce V-shaped grooves of $40\mu{m}$ in depth with enough dimensional accuracy and surface. For the analysis of machining characteristics in micro V-grooving, three components of cutting forces and AE signal are measured and processed. Experimental results showed that large amplitude of cutting forces and AE appeared at the beginning of every cutting path, and cutting forces had a linear relation with the cross-sectional area of uncut chip thickness. From the results of this study, proposed micro V-grooving technique could be successfully applied to forming the precise optical parts like prism patterns on light guide panel of TFT-LCD.

• Proceedings of the KOSOMBE Conference
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• v.1997 no.11
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• pp.411-414
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• 1997

This paper describes the design guideline, methodology and general specification of the developed 12 channel interpretive electrocardiograph. The developed 12 channel electrocardiograph consists of main module, patient module, DSP module, interface module, power/battery module, TFT color LCD and thermal recorder. The control panel of the system has full keyboard, rotate/push button, function key and unctional indicators. The graphic user interface program conveniently allows user to record, setup, store, manage ECGs. A variety of system configurations give it ability to make user favorable environment. This system also has a resting adult's ECG analysis program. The developed system and program will be continusely evolved using a database of clinically correlated ECGs.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.450-450
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• 2012

In recent days, advances in ZnO-based oxide semiconductor materials have accelerated the development of thin-film transistors (TFTs), which are the building blocks for active matrix flat-panel displays including liquid crystal displays (LCD) and organic light-emitting diodes (OLED). In particular, the development of high-mobility ZnO-based channel materials has been proven invaluable; thus, there have been many reports of high-performance TFTs with oxide semiconductor channels such as ZnO, InZnO (IZO), ZnSnO (ZTO), and InGaZnO (IGZO). The reliability of oxide TFTs can be improved by examining more stable oxide channel materials. In the present study, we investigated the effects of an ALD-deposited water vapor permeation barrier on the stability of ZnO and HfZnO (HZO) thin film transistors. The device without the water vapor barrier films showed a large turn-on voltage shift under negative bias temperature stress. On the other hand, the suitably protected device with the lowest water vapor transmission rate showed a dramatically improved device performance. As the value of the water vapor transmission rate of the barrier films was decreased, the turn-on voltage instability reduced. The results suggest that water vapor related traps are strongly related to the instability of ZnO and HfZnO TFTs and that a proper combination of water vapor permeation barriers plays an important role in suppressing the device instability.