• Journal of Information Display
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• 제7권4호
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• pp.17-20
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• 2006

The inline manufacturing equipment using a combination of the belt source and LPS source which is innovatively designed is introduced for the large-size AMOLED. The features of the inline system include 60sec TACT time, 19 numbers of chambers, non-substrate bending and easy application to very thin TFT substrates for the $4^{th}$ - $8^{th}$ Generation AMOLEDs.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2008년도 International Meeting on Information Display
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• pp.235-238
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• 2008

We report the improvement in brightness through the optimization of the organic passivation process for fabricating a TFT substrate for LCD-TV panel. In conclusion, the optimization of organic passivation was accomplished with improving over $10\;cd/m^2$ in brightness than that of a conventional organic passivation process.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2008년도 International Meeting on Information Display
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• pp.109-112
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• 2008

The grain size of JIC poly-Si can be varied from few tens of nanometers to the one having the larger grain size exceeding that of excimer laser crystallized (ELC) poly-Si according transmission electron microscopy. JIC poly-Si exhibits an excellent uniformity with regards to the grain size. We report here the blanket crystallization of the large area using the $2^{nd}$ generation glass substrate.

• Journal of Information Display
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• 제1권1호
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• pp.52-58
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• 2000

We observed that static electricity has an influence on the etching unformity of dry etching process. When the static electricity was applied from-200[V]to-1000[V] on glass substrates, the etching rate uniformity was changed to 1.5%-15%. In this experiment, the soft X-ray to neutralize static electricity was adopted as ore of neutralization methods. As an experimental result, soft X-ray irradiation improved neutralization capability on the surface of LCD glass substrate within the short time, about 15-30sec. The difference of etching rate uniformity was below 0.5%.

• 전자공학회논문지A
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• 제33A권5호
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• pp.117-124
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• 1996

The .mu.c-Si:H films have been deposited by PeCVD at the various conditions such as hydrogen dilution ratio, substrate temperature and RF power density. Then, we studied their electrical and optical properties. Top gate hydrogenated micro-crystalline silicon thin film transistors($\mu$c-Si:H TFTs) using $\mu$-Si:H and a-SiN:H films have been fabricated by FECVD. The electrical characteristics of the devices have been investigated by semiconductor parameter analyzer and compared with amorphous silicon thin film transistors (a-Si:H TFTs). In this study, on/off current ratio, threshold voltage and the field effect mobility of the $\mu$c-Si:H TFT were $3{\times}10^{4}$, 5.06V and 0.94cm$^{2}$Vs, respectively.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2002년도 International Meeting on Information Display
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• pp.325-328
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• 2002

We developed a high performance 2.2" active matrix OLED display for IMT-2000 mobile phone. Scan and Data driver circuits were integrated on the glass substrate, using low temperature poly-Si(LTPS) TFT CMOS technology. High efficiency EL materials were employed to the panel for low power consumption. Peak luminescence of the panel was higher than 250cd/$m^2$ with power consumption of 200mW.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2011년도 제41회 하계 정기 학술대회 초록집
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• pp.258-258
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• 2011

최근 유연 기판을 이용한 태양전지 및 TFT 등 전자소자 개발에 관한 연구가 주목받고 있다. 본 연구에서는 공정 시 유리한 유리기판상 전자소자 제작 후 폴리이미드막 박리를 통한 유연전자 소자 구현을 목적으로 한다. 폴리이미드막 박리를 목적으로 희생층으로서 a-Si:H을 사용하였다. 유리기판상에 60 nm 두께의 a-Si : H을 ICP (Induced coupled plasma) 공정으로 증착한 후 a-Si : H층 상부에 30 ${\mu}m$ 두께로 폴리이미드를 코팅하여 Hot plate와 furnace에서 열처리를 거쳤다. 이후 각기 다른 파장을 갖는 레이저의 파워를 가변하며 유리 기판 후면에 조사하였다. 실험 결과 355 nm UV 레이저로 가공한 경우 희생층으로 사용 된 a-Si : H층 내에 존재하는 수소가 레이저 빛 에너지에 의해 결합이 끊어지면서 유리기판과 폴리이미드막이 분리됨을 확인하였다.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2009년도 9th International Meeting on Information Display
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• pp.378-381
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• 2009

As a Joule-heat source, a conductive Mo layer was used to crystallize amorphous silicon for AMOLED backplanes. This Joule-heating induced crystallization (JIC) process could produce poly-Si having a grain size ranging from tens of nanometers to greater than several micrometers. Here, the blanket (single-shot whole-plane) crystallization could be achieved on the $2^{nd}$ and the $4^{th}$ generation glass substrate.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2009년도 9th International Meeting on Information Display
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• pp.1028-1031
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• 2009

High quality poly-SiGe thin films were prepared on 6-inch substrates using Reactive-thermal CVD with $Si_2H_6$ and $GeF_4$ around at $500^{\circ}C$ directly. Its thickness uniformity was ~ 3% on the entire substrate area. N-channel mobility of ~30 nm thick bottom-gate TFTs exceeded 20 $cm^2$/Vs without any further crystallization.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2009년도 9th International Meeting on Information Display
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• pp.1044-1046
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• 2009

Here we report the architecture for a non-volatile n-type memory paper field-effect transistor. The device is built using the hybrid integration of natural cellulose fibers (pine and eucalyptus fibers embedded in an ionic resin), which act simultaneously as substrate and gate dielectric, with amorphous GIZO and IZO oxides as gate and channel layers, respectively. This is complemented by the use of continuous patterned metal layers as source/drain electrodes.