• 대한전자공학회논문지SD
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• 제37권4호
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• pp.25-30
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• 2000

금속 유도 측면 결정화에 의한 다결정 실리콘 박막 트랜지스터의 제작에서 이온 질량 주입이 MILC 속도 및 거동에 미치는 영향을 분석하였다. 비정질 실리콘에 도펀트를 주입하거나 이온충돌을 가하면 MILC의 속도가 50% 이상 감소하고 MILC선단이 불균일 해졌다. IMD에 따른 비정질 실리콘 박막의 성질 변화를 분석하기 위하여 자외선 반사도 및 표면 거칠기를 관찰하였고, 이온 충돌에 의한 표면 거칠기의 증가가 MILC 속도 감소와 균일도에 영향을 주는 것으로 나타났다.

• 한국표면공학회:학술대회논문집
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• 한국표면공학회 1999년도 추계학술발표회 초록집
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• pp.56-56
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• 1999

For advanced TFT-LCD manufacturing processes, dry etching of thin-film layers(a-Si, $SiN_x$, SID & gate electrodes, ITO etc.) is increasingly preferred instead of conventional wet etching processes. To dry etch Al gate electrode which is advantageous for reducing propagation delay time of scan signals, high etch rate, slope angle control, and etch uniformity are required. For the Al gate electrode, some metals such as Ti and Nd are added in Al to prevent hillocks during post-annealing processes in addition to gaining low-resistivity($<10u{\Omega}{\cdot}cm$), high performance to heat tolerance and corrosion tolerance of Al thin films. In the case of AI-Nd alloy films, however, low etch rate and poor selectivity over photoresist are remained as a problem. In this study, to enhance the etch rates together with etch uniformity of AI-Nd alloys, magnetized inductively coupled plasma(MICP) have been used instead of conventional ICP and the effects of various magnets and processes conditions have been studied. MICP was consisted of fourteen pairs of permanent magnets arranged along the inside of chamber wall and also a Helmholtz type axial electromagnets was located outside the chamber. Gas combinations of $Cl_2,{\;}BCl_3$, and HBr were used with pressures between 5mTorr and 30mTorr, rf-bias voltages from -50Vto -200V, and inductive powers from 400W to 800W. In the case of $Cl_2/BCl_3$ plasma chemistry, the etch rate of AI-Nd films and etch selectivity over photoresist increased with $BCl_3$ rich etch chemistries for both with and without the magnets. The highest etch rate of $1,000{\AA}/min$, however, could be obtained with the magnets(both the multi-dipole magnets and the electromagnets). Under an optimized electromagnetic strength, etch uniformity of less than 5% also could be obtained under the above conditions.

• 대한의용생체공학회:학술대회논문집
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• 대한의용생체공학회 1997년도 추계학술대회
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• pp.411-414
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• 1997

This paper describes the design guideline, methodology and general specification of the developed 12 channel interpretive electrocardiograph. The developed 12 channel electrocardiograph consists of main module, patient module, DSP module, interface module, power/battery module, TFT color LCD and thermal recorder. The control panel of the system has full keyboard, rotate/push button, function key and unctional indicators. The graphic user interface program conveniently allows user to record, setup, store, manage ECGs. A variety of system configurations give it ability to make user favorable environment. This system also has a resting adult's ECG analysis program. The developed system and program will be continusely evolved using a database of clinically correlated ECGs.

• 기술혁신연구
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• 제20권2호
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• pp.1-28
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• 2012

그동안 출연연은 과학기술 발전을 선도하는 핵심 역할을 담당해 왔으나 최근에는 조직의 경쟁력 문제를 포함하여 그 미션과 역할까지 새롭게 정립해야 하는 시점에 있다. 본 연구는 ETRI를 결정적인 사례로 하여 현재 출연연이 직면하고 있는 구조적 한계와 어려움을 살펴보았다. 분석 결과 출연연의 자체 변화 노력도 문제이지만 출연연이 예산, 인력, 평가 등 통제가 어려운 구조적인 문제에 봉착되어 있음을 알 수 있다. ETRI의 경우 연구개발이나 특정기술 수준에서는 추격에서 탈추격으로 넘어서고 있으나 우리나라 출연(연) 연구 환경과 실제 일하는 방식은 추격형 체제에 머물러 있는 상황이다. 추격의 대상과 수단이 어느 정도 확실했던 추격기를 넘어 어디로 가야하며 무엇을 해야 할 것인가가 불확실한 탈추격 혁신 상황에서는 출연연의 미션 및 역할, 예산 인력 평가 체계, 사업기획 체계 및 프로세스 방식 등이 새롭게 변화될 필요가 있다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제42회 동계 정기 학술대회 초록집
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• pp.450-450
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• 2012

In recent days, advances in ZnO-based oxide semiconductor materials have accelerated the development of thin-film transistors (TFTs), which are the building blocks for active matrix flat-panel displays including liquid crystal displays (LCD) and organic light-emitting diodes (OLED). In particular, the development of high-mobility ZnO-based channel materials has been proven invaluable; thus, there have been many reports of high-performance TFTs with oxide semiconductor channels such as ZnO, InZnO (IZO), ZnSnO (ZTO), and InGaZnO (IGZO). The reliability of oxide TFTs can be improved by examining more stable oxide channel materials. In the present study, we investigated the effects of an ALD-deposited water vapor permeation barrier on the stability of ZnO and HfZnO (HZO) thin film transistors. The device without the water vapor barrier films showed a large turn-on voltage shift under negative bias temperature stress. On the other hand, the suitably protected device with the lowest water vapor transmission rate showed a dramatically improved device performance. As the value of the water vapor transmission rate of the barrier films was decreased, the turn-on voltage instability reduced. The results suggest that water vapor related traps are strongly related to the instability of ZnO and HfZnO TFTs and that a proper combination of water vapor permeation barriers plays an important role in suppressing the device instability.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제42회 동계 정기 학술대회 초록집
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• pp.459-459
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• 2012

Recently, the discharge of global warming gases in dry etching process of TFT-LCD display industry is a serious issue because perfluorocarbon compound (PFC) gas causes global warming effects. PFCs including CF4, C2F6, C3F8, CHF3, NF3 and SF6 are widely used as etching and cleaning gases. In particular, the SF6 gas is chemically stable compounds. However, these gases have large global warming potential (GWP100 = 24,900) and lifetime (3,200). In this work, we chose C3F6O gas which has a very low GWP (GWP100 = <100) and lifetime (< 1) as a replacement gas. This study investigated the effects of the gas flow ratio of C3F6O/O2 and process pressure in dual-frequency capacitively coupled plasma (CCP) etcher on global warming effects. Also, we compared global warming effects of C3F6O gas with those of SF6 gas during dry etching of a patterned positive type photo-resist/silicon nitride/glass substrate. The etch rate measurements and emission of by-products were analyzed by scanning electron Microscopy (SEM; HITACI, S-3500H) and Fourier transform infrared spectroscopy (FT-IR; MIDAC, I2000), respectively. Calculation of MMTCE (million metric ton carbon equivalents) based on the emitted by-products were performed during etching by controlling various process parameters. The evaluation procedure and results will be discussed in detail.

• Design & Manufacturing
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• 제2권2호
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• pp.29-32
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• 2008

A back light unit (BLU) is a key module of a thin film transistor liquid crystal display (TFT-LCD), frequently utilized in various mobile displays. In this study, we experimentally characterize transcription and optical properties of concave and convex microlens arrays (MLAs) of light guide plate (LGP) fabricated by injection molding with polycarbonate as a LGP substrate material. Nickel mold inserts were manufactured by electroforming on the MLA which was fabricated by the thermal reflow of photoresist microstructures patterned by UV-photolithography. For the case of convex microlens, the height of replicated microlens was less than that of the mold insert while maintaining almost the same microlens diameter of the mold insert as the location of the microlens is far from the gate. In contrast, for the concave microlens, the diameter of replicated microlens was larger than that of mold insert, while showing almost the same microlens height as the mold insert. From the optical examination of replicated convex and concave MLAs, it was found that a higher luminance of the LGP was achieved by the concave MLAs compared to the convex MLAs (about 30% enhancement in this case)due to the utilization of a larger amount of light provided by the light sources.

• 한국전기전자재료학회논문지
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• 제16권11호
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• pp.961-968
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• 2003

In order to reach the high electrical quality of organic thin film transistors (OTFTs) such as high mobility and on-off current ratio, it is strongly desirable to study the enhancement of electrical properties in OTFTs. Here, we report the novel method of hydrogen plasma treatment to improve electrical properties in inverted staggered OTFTs based on pentacene as active layer. To certify the effect of this method, we compared the electrical properties of normal device as a reference with those of device using the novel method. In result, the normal device as a reference making no use of this method exhibited a field effect mobility of 0.055 $\textrm{cm}^2$/Vs, on/off current ratio of 10$^3$, threshold voltage of -4.5 V, and subthreshold slope of 7.6 V/dec. While the device using the novel method exhibited a field effect mobility of 0.174 $\textrm{cm}^2$/Vs, on/off current ratio of 10$\^$6/, threshold voltage of -0.5 V, and subthreshold slope of 1.49 V/dec. According to these results, we have found the electrical performances in inverted staggered pentacene TFT owing to this method are remarkably enhanced. So, this method plays a key role in highly improving the electric performance of OTFTs. Moreover, this method is the first time yet reported for any OTFTs.

• 청정기술
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• 제21권4호
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• pp.209-216
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• 2015

인듐주석산화물(ITO)은 TFT-LCD, OLED 등의 투명전극에 널리 사용되는 소재이다. ITO의 주요 원소인 인듐(In)은 높은 비용과 제한된 매장량 등으로 인해 머지 않아 고갈될 것으로 예측되고 있다. 이에 대처하는 방법은 공정 후 잔류 ITO 타겟을 재활용하여 ITO 소재의 원료를 확보하는 것이다. 본 원고에서는 공정 후 잔류 ITO 타겟의 재자원화 기술 및 시장 동향 고찰 및 효율적인 재활용을 위한 방향을 제시하였다. 그 결과, 현재 국내 및 일본에서 대부분 잔류 ITO 타겟에서 In만을 재자원화하고 있는 것으로 파악되었다. 이외에도 ITO 나노분말 입자를 제조 및 분산한 용액을 이용하여 투명전극을 제작하는 연구개발이 진행되고 있다. 그러나, ITO 타겟을 이용한 투명전극이 다른 대체 기술을 적용한 것보다 우수하기 때문에, 보다 효율적인 ITO 재자원화 및 타겟 제작을 위해 ITO를 동시에 재생하는 기술 확립이 필요한 것으로 보인다.

• Journal of Welding and Joining
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• 제27권4호
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• pp.73-78
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• 2009

Characterization of the microweld CCFL electrode for the TFT-LCD backlight unit was carried out in terms of the glass beading heat treatment conditions. We evaluate the weld zone and parent metal of the microweld CCFL electrodes that were exposed to simulated glass beading heat treatment. The CCFL electrode was composed of the cup made with pure Ni, the pin made with pure Mo and the lead wire made with Ni-Mn alloy. Each part of the electrode was assembled together by micro spot welding process and then the assembled electrodes were exposed to simulated glass beading temperatures of $700^{\circ}C,\;750^{\circ}C$ and $800^{\circ}C$. The microstructures of the microweld CCFL electrode were observed by using optical microscope, scanning electron microscope and EDS. Micro-tensile and microhardness test were also carried out. The results indicated that the grain coarsening in the HAZs(heat affected zones) for both the cup-pin weld and pin-lead wire were exhibited and the grain coarsening of the HAZ for the cup and the lead wire was more obvious than the HAZ of the pin. The micro-tensile test revealed that the fracture occurred at the cup-pin weld zone for all test conditions. The fracture surface could be classified into two parts such as pin portion and cup portion including weld nugget. The failure was seemed to be initiated from the boundary between nugget and pin through the weld joint. The result of the microhardness measurement exhibited that the relatively low hardness value, about 105HV was recorded at the HAZ of the cup. This value was about 50% less than that of the original value of the cup. The reduction of the microhardness was considered as the cause of the grain coarsening due to welding process. It was also appeared that there was no change in electric resistance for the standard electrodes and heat treated electrodes.