• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2003년도 춘계학술대회 논문집 디스플레이 광소자분야
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• pp.111-114
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• 2003

Compared to a conventional atomic layer deposition (ALD) grown Al203 film, Plasma enhanced ALD (PEALD) grown AION film was revealed to possess a large breakdown field, which is necessary for stable operation of thin film electroluminescent (TFEL) device. Also, AION is more stable than Al203 films grown by PEALD or by ALD after post-annealing process, which is inevitably required to improve luminance property of phosphor. Furthermore, AION films were applied to insulators of ZnS:Tb TFEL device. Resultant1y, they show better stability than ALD grown insulators under high electric field.

• 전자공학회논문지D
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• 제34D권2호
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• pp.27-37
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• 1997

Photoluminescent and cathodoluminescent charcteristics of inorganic luminescent materials were investigated ot develop possible phosphors for thin film electroluminescent (TFEL) device applications. Mg, Zn, and Photoluminescent and cathodoluminescent charcteristics of inorganic luminescent materials were investigated ot develop possible phosphors for thin film electroluminescent (TFEL) device applications. Mg, Zn, and $Si_3N_4$ powders were used to synthesize $(Mg_xZn_{1-x})SiN_2$ host materials. $Tb_4O_7$ and $Eu_2O_3$ powdrs were added as luminescent centers. Very sharp emission spectra of $Tb^{3+}$ ions were observed from $Mg._5Zn._5SiN_2:Tb$ sampels sintered at $1400^{\circ}C$ for an hour and the maximum intensity of emission spectra occured at wavelength of 550nm (green light). Synthetic conditions of $(Mg_xZn_{1-x})SiN_2:Eu$ phosphors were optimized for the hghest luminescence. The Eu concentrations were varied from 0.2% to 1.6%. Before firing, the powders were mixed using ballmills, methanol, acetone, or D.I. water. The Mg/Zn ratio also were varied from x=0.3 to x=0.7. The maximum PL intensity was obtained from a sample with 1.2% Eu concentration and the powder was mixed with methanol and dried before firing. The maximum intensity of the emission spectra occurred t the wavelength of 470nm(blue light). TFEL devices fabricated by using sputter deposition of $(Mg._3Zn._7)SiN_2:Eu$ phosphor layer showed yellowish white emission at the phosphor field of 2MV/cm.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2003년도 International Meeting on Information Display
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• pp.910-913
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• 2003

In order to enhance performance, stability, and brightness of inorganic blue-light emitting EL device, barrier layer structure and pulsed laser annealing(PLA) treatment were introduced. The barrier layer structure was utilized for improving brightness of the device and instead of thermal annealing, pulsed laser annealing process was used. From this study, optimum barrier layer thickness and number of pulsed laser irradiation are established.

• 한국광학회:학술대회논문집
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• 한국광학회 2000년도 제11회 정기총회 및 00년 동계학술발표회 논문집
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• pp.320-321
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• 2000

전기장 발광현상(Electroluminescence, 이하 EL)은 1936년 Destriau$^{[1]}$ 가 ZnS:Cu 분말에서 처음 전기장 발광현상을 발견한 이래 TFEL(Thin Film EL)소자의 구동전압을 감소시키는 문제는 ACTFEL(Alternating Current Thin Film EL)소자의 개발이후 계속적인 관심의 대상이 되어왔다. TFEL 소자는 전기적으로 용량소자이므로 전기장 인가시 각 층의 정전용량의 역수에 비례하는 전압이 분배되므로 동일한 조건의 형광막 사용시 소자의 구동전압을 낮추기 위해서는 절연박막의 두께를 줄이는 방법과 유전율이 높은 물질을 사용하는 방법이 있으나, 전자의 경우에는 박막의 결함이 생기기 쉬워 한계가 있기 때문에 고유전율 특성을 갖는 새로운 물질을 개발하는 것이 바람직하다. Ta$_2$O$_{5}$ 박막의 경우 작은 누설전류 특성과 고유전율 특성으로 인해 고집적을 요하는 반도체 분야에서 많은 연구가 진행되어 왔다. 또한 EL소자 응용시 효율면에서 우수한 특성이 기대되며, 특히 수분에 강한 특성을 가지고 있어 EL소자의 안정성이 예견되는 바이다. 본 연구에서는 Ta$_2$O$_{5}$ 박막의 산소 결핍에 따른 전기적 특성에 대해 연구하였고 Ta$_2$O$_{5}$ 박막을 이용한 저전압에서 구동가능한 전기장 발광소자를 제작하여 전기광학적 특성에 대해 연구하였다. (중략

• 전자공학회논문지D
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• 제36D권10호
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• pp.31-36
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• 1999

질소 화합물의 새로운 형광체를 개발하기 위하여 $CaSiN_2:Eu,\;CaSiN_2:Tb$ 형광체를 합성한 후, 빛 발광 (photoluminescence, PL) 및 전계 발광(electroluminescence, EL) 특성을 평가하였다. $Ca_3N_2$, $Si_3N_4$ 및 $EuF_3$ 또는 $TbF_3$의 미분말을 혼합, 성형 및 소결하여 질소 화합물 형광체를 합성하였다. 합성된 $CaSiN_2:Eu,\;CaSiN_2:Tb$ 형광체의 PL 특성이 각각 Eu, Tb 이온에 의한 고유한 발광 파장과 일치하여 형광체로의 활용 가능성을 확인하였다. 스퍼터링 방법으로 제작된 $CaSiN_2:Eu$ 박막 전계 발광(thin-film electroluminescence, TFEL) 소자의 문턱 전압과 280 V에서의 발광 휘도는 각각 90 V, 1.62 $cd/m^2$ 임을 알 수 있었다. 또한 change-voltage(Q-V) 및 transferred charge-phosphor Field($Q_t-F_p$)의 전기적 특성도 함께 측정되었다.

• 전자공학회논문지D
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• 제35D권2호
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• pp.52-59
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• 1998

The ZnS:Mn thin film electroluminescent(TFEL) devices fabricated by ALE system were investigated. Yellow-orange light emission was observed when the applied voltage exceeded 134 V and luminance increased sharply as the applied voltage increased. Luminance of 568 Cd/c $m^{2}$ was obtained under 1 KHz sinusoidal voltage wave application at the peak applied voltage of 230 V. The peak wavelength of the emissionwas 577 nm. The C-V, Q-V, $Q_{t}$ - $F_{p}$ , L- $Q_{cond}$, and V- $Q_{pol}$ have been measured under theapplication of the trapezoidal wave with its pulse width varying 0 to 75 .mu.sec. The phoshor and the insulator capacitance of the TFEL device under test were 24.3 nF/c $m^{2}$ and 9 nF/c $m^{2}$, respectively. It was observed that the threshold voltage changed from 137V to 100V as the pulse width varied from 0 to 75 .mu.sec. The L- $Q_{cond}$ characteristics showed that the light emission increased in proportion to the $Q_{cond}$. The luminance increased from 386 Cd/ $m^{2}$ to 607 Cd/ $m^{2}$ when the $Q^{+}$$_{cond}$ increased from 1.3 .mu.C/c $m^{2}$ to 2.3 .mu.C/c $m^{2}$. The V- $Q_{pol}$ characteristics showed that the V was inversely proportional to $Q_{pol}$./. th/ was inversely proportional to $Q_{pol}$./. pol/./.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2007년도 7th International Meeting on Information Display 제7권2호
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• pp.1629-1631
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• 2007

Significant process in the performance and commercialization of full-color thin-film electroluminescent(EL) displays has been achieved. This is due to the remarkable progress made in the performance of exiting EL phosphors, development of new phosphor materials, and design of new EL phosphor structures. In this paper, we fabricated thinfilm EL devices with ZnS buffer and $BaTiO_3$ electric layer with on top and bottom of phosphor layer. The effect of ZnS and $BaTiO_3$ layer on the luminance of EL device were studied.

• Journal of Advanced Marine Engineering and Technology
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• 제30권4호
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• pp.514-519
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• 2006

SrS:Cu, Cl thin films have been grown by the hot wall technique with S furnace placed on the outside of the growth chamber in order to investigate the crystallographic and optical characteristics. The films have a good crystallinity independent of CuCl wall temperature and PL characteristics showed a peak assigned by the transition form $3d^94s^1\;(^3Eg)$ to $3d^{10}\;(^1A_{1g})$ of $Cu^+$ center. It has also been found that. from the PLE spectra, $Cu^+$ luminescent centers are doped in the host materials. The EL emission from SrS:Cu-based device showed a greenish-blue but shifted to short wavelength compared to SrS:Ce-based EL. The device was obtained the maximum luminance of $110cd/m^2$ and the maximum luminous efficiency of $0.1\;lm/W$ at $V_{40}$.

• 한국재료학회지
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• 제10권4호
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• pp.290-294
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• 2000

ZnS:Mn TFEL device를 전자선 진공증착법으로 제작하여 전기광학적 특성에 관하여 조사하였다. $Ta_2O_5$ 박막의 산소 결핍에 따른 정전용량을 측정하기 위하여 산소분위기에서 열처리에 따른 AES(Auger electron spectroscopy)와 C-F를 측정하였다. 제작한 EL 소자의 전기장 발광 파장은 550~650nm 였으며 이것은 $Mn^{2+}$ 이온의 $3d^5$ 여기준위인 $^4T_1(^4G)$ 에서 $3d^5$ 기저준위인 $^6A_1(^S)$로의 내각전자전이 피크이다. 열처리를 수행하지 않은 $Ta_2O^5$를 절연층으로 사용한 EL 소자의 발광시작전압은 24~28V이고 색도 좌표값 X=0.5151, Y=0.4202인 황등색 발광을 하였다. $Ta_2O_5$를 절연층으로 사용한 소자가 저전압에서 구동이 가능하므로 EL 소자의 실용화가 기대된다.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2004년도 Asia Display / IMID 04
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• pp.1091-1094
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• 2004

High-luminous efficiency full-color emissions in photoluminescence (PL) were obtained in $GdVO_4$ phosphor thin films co-doped with various amounts of Eu, Er and/or Tm and postannealed at approximately 1000$^{\circ}C$. The $GdVO_4$:Eu,Er,Tm phosphor thin films were deposited on thick $BaTiO_3$ ceramic sheets by r.f. magnetron sputtering using powder targets and postannealed in an air atmosphere. The rare earth (RE) content (RE/(Gd+V+RE) atomic ratio) in the oxide phosphor thin films was varied in the range from 0.1 to 2 at.%. It was found that the excitation of $GdVO_4$:Eu.Er,Tm thin films is attributed to band-to-band transition. A white PL emission was obtained in a $GdVO_4$:Eu,Er,Tm thin film with Eu, Er and Tm contents of 0.2, 0.7 and 1 at.%, respectively: CIE chromaticity color coordinates. (X=0.352 and Y=0.351). In addition, a white emission was obtained in a thin-film electroluminescent (TFEL) device made with this thin film.