• 한국정보디스플레이학회:학술대회논문집
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• 2003.07a
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• pp.910-913
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• 2003

In order to enhance performance, stability, and brightness of inorganic blue-light emitting EL device, barrier layer structure and pulsed laser annealing(PLA) treatment were introduced. The barrier layer structure was utilized for improving brightness of the device and instead of thermal annealing, pulsed laser annealing process was used. From this study, optimum barrier layer thickness and number of pulsed laser irradiation are established.

• Journal of Advanced Marine Engineering and Technology
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• v.30 no.4
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• pp.514-519
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• 2006

SrS:Cu, Cl thin films have been grown by the hot wall technique with S furnace placed on the outside of the growth chamber in order to investigate the crystallographic and optical characteristics. The films have a good crystallinity independent of CuCl wall temperature and PL characteristics showed a peak assigned by the transition form $3d^94s^1\;(^3Eg)$ to $3d^{10}\;(^1A_{1g})$ of $Cu^+$ center. It has also been found that. from the PLE spectra, $Cu^+$ luminescent centers are doped in the host materials. The EL emission from SrS:Cu-based device showed a greenish-blue but shifted to short wavelength compared to SrS:Ce-based EL. The device was obtained the maximum luminance of $110cd/m^2$ and the maximum luminous efficiency of $0.1\;lm/W$ at $V_{40}$.

• 한국정보디스플레이학회:학술대회논문집
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• 2007.08b
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• pp.1629-1631
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• 2007

Significant process in the performance and commercialization of full-color thin-film electroluminescent(EL) displays has been achieved. This is due to the remarkable progress made in the performance of exiting EL phosphors, development of new phosphor materials, and design of new EL phosphor structures. In this paper, we fabricated thinfilm EL devices with ZnS buffer and $BaTiO_3$ electric layer with on top and bottom of phosphor layer. The effect of ZnS and $BaTiO_3$ layer on the luminance of EL device were studied.

• Korean Journal of Materials Research
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• v.10 no.4
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• pp.290-294
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• 2000

ZnS:Mn TFEL devices were fabricated by electron-beam evaporation method and then the electro-optical properties were investigated. To investigate the capacitance which was due to oxygen vacancy at the $Ta_2O_5$ thin film, AES(Auger Electron Spectroscopy) and C-F(capacitance-frequency) measurements were used. It was found that the capacitance was decreased by annealing the $Ta_2O_5$ film in oxygen ambience. From EL emission measurement, we observed the EL emission spectrum which had the peak range from 550nm and 650nm. This emission is associated with the transition from $^4T_1(^4G)$ first excited state to $^6A_1(^6S)$ ground state in the $3d^5$ energy level configuration of $Mn^{2+}$ occurs. The threshold voltage of EL device with $Ta_2O_5$ insulator layer was found to be 24V~28V. The CIE color coordinates of these emission are X=0.5151, Y=0.4202 which is yellowish orange emitting. The EL device using $Ta_2O_5$ insulator layer can be driven with a low voltage which is beneficial to the practical application.

• 한국정보디스플레이학회:학술대회논문집
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• 2004.08a
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• pp.1091-1094
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• 2004

High-luminous efficiency full-color emissions in photoluminescence (PL) were obtained in $GdVO_4$ phosphor thin films co-doped with various amounts of Eu, Er and/or Tm and postannealed at approximately 1000$^{\circ}C$. The $GdVO_4$:Eu,Er,Tm phosphor thin films were deposited on thick $BaTiO_3$ ceramic sheets by r.f. magnetron sputtering using powder targets and postannealed in an air atmosphere. The rare earth (RE) content (RE/(Gd+V+RE) atomic ratio) in the oxide phosphor thin films was varied in the range from 0.1 to 2 at.%. It was found that the excitation of $GdVO_4$:Eu.Er,Tm thin films is attributed to band-to-band transition. A white PL emission was obtained in a $GdVO_4$:Eu,Er,Tm thin film with Eu, Er and Tm contents of 0.2, 0.7 and 1 at.%, respectively: CIE chromaticity color coordinates. (X=0.352 and Y=0.351). In addition, a white emission was obtained in a thin-film electroluminescent (TFEL) device made with this thin film.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.31A no.9
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• pp.121-127
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• 1994

The capability for application of rf magnetron sputterred and post annealed BaTiO$_{3}$ thin films in dielectrics AC drived TFELD(thin film electroluminescent device) was investigated. The dielectric constant of the thin films slightly increased up to about 25 with increase fothe post annealing temperature in the range of 210$^{\circ}C$-480$^{\circ}C$. The dielectric loss was about 0.005-0.01 except for the high frequency range above 100kHz and nearly independent on post annealing temperature. The BaTiO$_{3}$ thin film used for TFELD was annealed at 480.deg. C and Si$_{3}$N$_{4}$ thin film was inserted between BaTiO$_{3}$, lower dielecrics and ZnS:Mn, phosphor layer for stable driving of the device and for fear of interdiffusion. Regardless of the frequency of the applied sine wave voltage, the threshold voltage of the prepared TFELD was 65volt and saturated brightness was about 3000cd/m$^{2}$ at 130volt(2kHz sine wave), 65volt above V$_{TH}$.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.303.2-303.2
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• 2014

The oxides of group IV transition metals such as titanium, zirconium, hafnium have many important current and future application, including protective coatings, sensors and dielectric layers in thin film electroluminescent (TFEL) devices. Recently, group IV transition metal oxide films have been intensively investigated as replacements for SiO2. Due to high permittivities (k~14-25) compared with SiO2 (k~3.9), large band-gaps, large band offsets and high thermodynamic stability on silicon. Herein, we report the synthesis of new group IV transition metal complexes as useful precursors to deposit their oxide thin films using chemical vapor deposition technique. The complexes were characterized by FT-IR, 1H NMR, 13C NMR and thermogravimetric analysis (TGA). Newly synthesised compounds show high volatility and thermal stability, so we are trying to deposit metal oxide thin films using the complexes by Atomic Layer Deposition (ALD).

• Proceedings of the Korea Institute of Fire Science and Engineering Conference
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• 2011.11a
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• pp.462-465
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• 2011

최근 우리나라에서는 대형 화재사고가 빈번히 발생함에 따라 그로 인한 재산 및 인명피해가 날로 증가하고 있는 실정이다. 따라서 건축물 내에서 화재가 발생할 경우 인명피해를 최소화하기 위하여 피난유도설비의 설치를 의무화하고 있다. 지금까지 일반적으로 가장 널리 사용되고 있는 피난유도설비로는 유도등이 있으며, 최근 들어 피난유도선의 설치도 다중이용업소를 중심으로 점차 확대되어가고 있는 추세이다. 피난유도설비는 평상시 이용되는 교류 상용전원에 의해서뿐만 아니라 비상시 이용되는 직류 비상전원에 의해서도 정상적으로 작동되어야 하기 때문에, 피난유도설비의 전원장치는 주어진 전원으로부터 주어지는 교류 또는 직류를 발광부에 맞게 일정한 전압과 주파수로 변환시켜주어야 한다. 실제로 LED(발광다이오드) 유도등은 상용전원으로부터 220V의 교류를 받아서 전원장치에서 정류변환을 통해 얻어지는 낮은 전압 24V의 직류를 이용하며, 대부분의 유도등 백라이트로 사용되고 있는 CCFL(냉음극형광램프)에는 상용전원으로부터 220V, 60Hz 교류를 인가받아 전원장치에서 정류 역변환을 통해 만들어진 100kHz의 고주파 교류가 공급된다. 더욱이 유도선의 전원장치에서는 상용전원 220V, 60Hz의 교류를 인가받아 정류 역변환 및 교류변환 과정을 차례로 거쳐 최종적으로 100V, 400Hz의 교류로 전환하여 TFEL(박막전계발광) 소자로 전송하게 된다. 한편, 상용전원이 차단된 상태에서도 전원장치는 마찬가지로 비상전원으로부터 24V의 직류를 공급받아 인버터를 통해 역변환 하여 100kHz의 고주파 교류를 만들어 주거나 추가적인 교류변환을 거쳐 100V, 400Hz의 교류로 변환시켜 내보낸다. 본 연구에서는 상대적으로 복잡한 전력변환 회로들을 포함하고 있는 유도선의 전원장치를 개선하여, 전원장치의 연결가능길이를 기존의 60m에서 최대 100m까지 연장시킴으로써, 터널이나 지하도와 같은 곳에서 특히 경쟁력을 갖게 될 것으로 기대된다.

• Proceedings of the KIEE Conference
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• 1997.07d
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• pp.1424-1426
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• 1997

저전압 구동이 가능한 교류구동형 박막전기발광소자를 구현하기 위해 높은 유전상수를 가지며 특히 광학적 굴절률이 발광박막과 유사하여 광학적 특성 개선에도 효과적인 것으로 알려져 있는 $Ta_2O_5$를 제조하였다. $Ta_2O_5$박막은 rf-magnetron sputtering방법으로 형성하였으며 기판온도, working pressure, 박막의 두께에 따른 전기적인 특성을 조사하였다. 10mTorr에서 제조된 $Ta_2O_5$박막은 $22{\sim}26$의 비유전율을 보였고, 유전손실은 $0.007{\sim}0.03(1kHz{\sim}10kHz)$의 값을 보였다. $100^{\circ}C$에서 제조된 박막의 전하저장용량은 $7.9{\mu}C/cm^2$이었다. 제조된 박막의 항복전압은 인가 전압의 극성에 의존하며, 전류특성은 기판온도와 200nm와 300nm의 두께에서는 $V^{1.95}{\sim}V^{2.35}$에 비례하는 space charge limited current특성을 보였고, 400nm에서는 Poole Frenkel특성을 보였다. 이상의 결과로 TFEL소자에 응용에 적합한 $Ta_2O_3$ 박막은 $200^{\circ}C$에서 증착되고 200nm와 300nm인 것으로 나타났으며, 제조된 MIS구조(ITO-$Ta_2O_5$-ZnS-Al)의 ACTFEL소자에서의 전도전하는 각각 $13uC/cm^2$, $8.3uC/cm^2$로 조사되었다.

• Clean Technology
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• v.14 no.3
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• pp.184-192
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• 2008

Fluoride-type cleaning agents such as 2,2,2-trifluoroethanol (TFEA) and hydrofluoroethers (HFEs) do not destroy ozone in the stratosphere and have low global warming potential compared to hydrofluorocarbons(HFCs) and hydrochlorofluorocarbons (HCFCs). Especially, HFEs which have no flash point are paid attention as next generation type of cleaning agents for chlorofluorocarbons (CFCs) since they are safe in handling and have excellent penetration ability compared to hydrocarbon cleaning agents with low flash point. Here, the physical properties and cleaning abilities of fluoride-type cleaning agents such as TFEA, HFE-7100, HFE-7200, HFE-476mec, HFE-449mec-f, AE-3000 and AE-3100E and silicide-type cleaning agents such as trifluoroetoxytrimethylsilane (TFES) and hexamethyldisilazane (HMDS) were measured and compared with those of ozone destruction substances such as CFC-113 and 1,1,1-trichloroethane. They were also compared with toxic methylene chloride (MC) and isopropyl alcohol (IPA) which are now being used as an alternative cleaning agents. As a result, TFEA and HFEs had lower cleaning ability for removal of various soils compared to chloride-type cleaning agents, but they showed excellent cleaning ability fur fluoride-type soils. TFES and HMDS also showed excellent cleaning ability for silicide-type soils.